arXiv subjects

G. Schierning

Publications and source records attributed to G. Schierning.

3 recordsLinked to original sources

arXiv2024

The thermoelectric conversion efficiency problem: Insights from the electron gas thermodynamics close to a phase transition

The bottleneck in modern thermoelectric power generation and cooling is the low energy conversion efficiency of thermoelectric materials. The detrimental effects of lattice phonons on performance can be mitigated, but achieving a high thermoelectric power factor remains a major problem because the Seebeck coefficient and electrical conductivity cannot be jointly increased. The conducting electron gas in thermoelectric materials is the actual working fluid that performs the energy conversion, so its properties determine the maximum efficiency that can theoretically be achieved. By relating the thermoelastic properties of the electronic working fluid to its transport properties (considering noninteracting electron systems), we show why the performance of conventional semiconductor materials is doomed to remain low. Analyzing the temperature dependence of the power factor theoretically in 2D systems and experimentally in a thin film, we find that in the fluctuation regimes of an electronic phase transition, the thermoelectric power factor can significantly increase owing to the increased compressibility of the electron gas. We also calculate the ideal thermoelectric conversion efficiency in noninteracting electron systems across a wide temperature range neglecting phonon effects and dissipative coupling to the heat source and sink. Our results show that driving the electronic system to the vicinity of a phase transition can indeed be an innovative route to strong efficiency enhancement, but at the cost of an extremely narrow temperature range for the use of such materials, which in turn precludes potential development for the desired wide range of thermoelectric energy conversion applications.

cond-mat.mtrl-sci↗

arXiv2014

Spatially Resolved Determination of Thermal Conductivity by Raman Spectroscopy

We review the Raman shift method as a non-destructive optical tool to investigate the thermal conductivity and demonstrate the possibility to map this quantity with a micrometer resolution by studying thin film and bulk materials for thermoelectric applications. In this method, a focused laser beam both thermally excites a sample and undergoes Raman scattering at the excitation spot. The temperature dependence of the phonon energies measured is used as a local thermometer. We discuss that the temperature measured is an effective one and describe how the thermal conductivity is deduced from single temperature measurements to full temperature maps, with the help of analytical or numerical treatments of heat diffusion. We validate the method and its analysis on 3- and 2-dimensional single crystalline samples before applying it to more complex Si-based materials. A suspended thin mesoporous film of phosphorus-doped laser-sintered Si78Ge22 nanoparticles is investigated to extract the in-plane thermal conductivity from the effective temperatures, measured as a function of the distance to the heat sink. Using an iterative multigrid Gauss-Seidel algorithm the experimental data can be modelled yielding a thermal conductivity of 0.1 W/m K after normalizing by the porosity. As a second application we map the surface of a phosphorus-doped 3-dimensional bulk-nanocrystalline Si sample which exhibits anisotropic and oxygen-rich precipitates. Thermal conductivities as low as 11 W/m K are found in the regions of the precipitates, significantly lower than the 17 W/m K in the surrounding matrix. The present work serves as a basis to more routinely use the Raman shift method as a versatile tool for thermal conductivity investigations, both for samples with high and low thermal conductivity and in a variety of geometries.

cond-mat.mtrl-sci↗

arXiv2011

From nanoparticles to nanocrystalline bulk: Field assisted sintering of silicon nanoparticles

Nanocrystalline bulk materials are desirable for many applications as they combine mechanical strength and specific electronic transport properties. Our bottom up approach starts with tailored nanoparticles. Compaction and thermal treatment are crucial, but usually the final stage sintering is accompanied by rapid grain growth which spoils nanocristallinity. For electrically conducting nanoparticles, field activated sintering techniques overcome this problem. Small grain sizes have been maintained in spite of consolidation. Nevertheless, the underlying principles, which are of high practical impact, have not been fully elucidated yet. In this combined experimental and theoretical work we show, how the developing microstructure during sintering correlates to the percolation paths of the current through the powder using highly doped silicon nanoparticles as a model system. It is possible to achieve a nanocrystalline bulk material and a homogeneous microstructure. For this, not only the generation of current paths due compaction, but also the disintegration due to joule heating is required. The observed density fluctuations on the micrometer scale are attributed to the specific heat profile of the simulated powder networks.

cond-mat.mes-hall↗