arXiv subjects

G. Shipunov

Publications and source records attributed to G. Shipunov.

14 recordsLinked to original sources

arXiv2026

Point-contact enhanced superconductivity in trigonal PtBi2: quest for the origin of high-Tc

We studied enhanced superconductivity in point contacts (PCs) based on a type-I Weyl semimetal trigonal t-PtBi2 using both normal metal (Ag, Cu, Pt) and ferromagnetic (Fe, Co, Ni) tips by measuring the differential resistance dV/dI(V) curves. In most cases, the value of the superconducting critical temperature Tc ranges between 3 and 5 K, which is several times higher than the maximum bulk Tc. Notably, among the various PCs we examined, a few achieved Tc values as high as 8 K, including those with both normal and ferromagnetic tips. Additionally, the critical magnetic field is also highly enhanced in these PCs and reaches up to several Tesla. The common reason for the Tc increase may be related to pressure/strain caused during the PC's formation. It is worth noting that a greater increase in Tc is observed in PCs formed at the edge of the sample flake, compared to those formed on the plane of the platelet. The results also reveal that the enhancement of Tc in PCs based on t-PtBi2 is compatible with ferromagnetic tip, which may suggest a potentially complex nature of enhanced superconductivity. Our findings besides suggest that t-PtBi2 is a promising candidate for realizing topological superconductivity at more accessible temperatures.

cond-mat.supr-con↗

arXiv2025

Chiral anomaly in the Weyl semimetal TaRhTe$_4$

TaRhTe$_4$ is a type-IIWeyl semimetal, exhibiting fourWeyl points in proximity to the Fermi level. In this article, we report our results of a systematic study of longitudinal magnetoresistance in TaRhTe$_4$. Our findings indicate that magnetoresistance becomes negative only when the magnetic field is applied parallel to the electric field. By rotating E (as well as B), we show that its origin is consistent with the prediction of the chiral anomaly, while the current jetting effect and weak localization could be excluded. The negative magnetoresistance persists up to room temperature, suggesting that TaRhTe4 exhibits distinctive properties within the family of Weyl semimetals.

cond-mat.str-el↗

arXiv2025

Fermi surface evolution in Weyl semimetal t-PtBi$_2$ probed by transverse transport properties

The combination of non-trivial topology and superconductivity opens to novel quantum devices. The discovery of intrinsic materials where such properties appear together represents a frontier in modern condensed matter physics. Trigonal PtBi$_2$ has recently emerged as a possible candidate, being the first example of superconducting type-I Weyl semimetal. However, several aspects of this promising compound still need to be unveiled, concerning its complicated band structure, the actual role of Weyl points in determining its electronic properties and the nature of the superconducting transition. In this work, we experimentally investigated a t-PtBi$_2$ single crystal by means of the Hall and Nernst effects. In particular, we revealed a change of regime in its electronic properties, which is compatible with a temperature and magnetic field evolution of hole-like pockets in the Fermi Surface.

cond-mat.supr-con↗

arXiv2024

Large Nernst effect in Te-based van der Waals materials

Layered van der Waals tellurides reveal topologically non-trivial properties that give rise to unconventional magneto-transport phenomena. Additionally, their semimetallic character with high mobility makes them promising candidates for large magneto-thermoelectric effects. Remarkable studies on the very large and unconventional Nernst effect in WTe$_2$ have been reported, raising questions about whether this property is shared across the entire family of van der Waals tellurides. In this study, systematic measurements of the Nernst effect in telluride van der Waals Weyl semimetals are presented. Large linear Nernst coefficients in WTe$_2$ and MoTe$_2$ are identified, and moderate Nernst coefficients with non-linear behavior in magnetic fields are observed in W$_{0.65}$Mo$_{0.35}$Te$_2$, TaIrTe$_4$, and TaRhTe$_4$. Within this sample set, a correlation between the dominant linear-in-magnetic-field component of the Nernst coefficient and mobility is established, aligning with the established Nernst scaling framework, though with a different scaling factor compared to existing literature. This enhancement might be caused by the shared favorable electronic band structure of this family of materials. Conversely, the non-linear component of the Nernst effect in a magnetic field could not be correlated with mobility. This non-linear term is almost absent in the binary compounds, suggesting a multiband origin and strong compensation between electron-like and hole-like carriers. This comprehensive study highlights the potential of van der Waals tellurides for thermoelectric conversion.

cond-mat.mtrl-sci↗

arXiv2024

Electron-phonon interaction, magnetic phase transition, charge density waves and resistive switching in VS2 and VSe2 revealed by Yanson point contact spectroscopy

VS2 and VSe2 have attracted particular attention among the transition metals dichalcogenides because of their promising physical properties concerning magnetic ordering, charge density wave (CDW), emergent superconductivity, etc., which are very sensitive to stoichiometry and dimensionality reduction. Yanson point contact (PC) spectroscopic study reveals metallic and nonmetallic states in VS2 PCs, as well as a magnetic phase transition was detected below 25 K. Analysis of PC spectra of VS2 testifies the realization of the thermal regime in PCs. At the same time, rare PC spectra, where the magnetic phase transition was not visible, shows a broad maximum of around 20 mV, likely connected with electron-phonon interaction (EPI). On the other hand, PC spectra of VSe2 demonstrate metallic behavior, which allowed us to detect features associated with EPI and CDW transition. The Kondo effect appeared for both compounds, apparently due to interlayer vanadium ions. Besides, the resistive switching was observed in PCs on VSe2 between a low resistive, mainly metallic-type state, and a high resistive nonmetallic-type state by applying bias voltage (about 0.4V). In contrast, reverse switching occurs by applying a voltage of opposite polarity (about 0.4V). The reason may be the alteration of stoichiometry in the PC core due to the displacement of V ions to interlayer under a high electric field. The observed resistive switching characterize VSe2 as a potential material, e.g., for non-volatile resistive RAM, neuromorphic engineering, and for other nanoelectronic applications. At the same time, VSe2 attracts attention as a rare layered van der Waals compound with magnetic transition.

cond-mat.mes-hall↗

arXiv2022

Electron-phonon interaction and point contact enhanced superconductivity in trigonal PtBi2

PtBi2 is a Weyl semimetal, which demonstrates superconductivity with low critical temperature Tc ~ 0.6 K in the bulk. Here, we report our study of electron-phonon interaction (EPI) in trigonal PtBi2 by the Yanson point contact (PC) spectroscopy and presenting the observation of PC enhanced superconductivity. We show, that the Yansons PC spectra display a broad maximum around 15 meV, indicating, apparently, EPI mechanism of Cooper pairing in PtBi2. Moreover, we discovered a substantial increase of Tc up to ~ 3.5 K in PCs. The observed Tc is sufficiently higher than the bulk value, as well as detected at hydrostatic pressure. We calculated the phonon density of states and Eliashberg EPI function in PtBi2 within the framework of the density functional theory. A comparison of experimental data with theoretical calculations showed acceptable agreement. The theoretical Tc is 3.5 K, which corresponds to the experimental value.

cond-mat.supr-con↗

arXiv2021

Layered van der Waals topological metals of TaTMTe4 (TM = Ir, Rh, Ru) family

Layered van~der~Waals materials of the family TaTMTe$_4$ (TM=Ir, Rh, Ru) are showing very interesting electronic properties. Here we report the synthesis, crystal growth and structural characterization of TaIrTe$_4$, TaRhTe$_4$, TaIr$_{1-x}$Rh$_{x}$Te$_4$ ($x = 0.06$; 0.14; 0.78; 0.92) and Ta$_{1+x}$Ru$_{1-x}$Te$_4$ single crystals. For Ta$_{1+x}$Ru$_{1-x}$Te$_4$ off-stoichiometry is shown. X-ray powder diffraction confirms that TaRhTe4 is isostructural to TaIrTe4. We show that all these compounds are metallic with diamagnetic behavior. Ta$_{1.26(2)}$Ru$_{0.75(2)}$Te$_{4.000(8)}$ exhibits an upturn in the resistivity at low temperatures which is strongly field dependent. Below $T \approx 4$K we observed signatures of the superconductivity in the TaIr$_{1-x}$Rh$_{x}$Te$_4$ compounds for $x = 0.92$. Magnetotransport measurements on all samples show weak magnetoresistance (MR) field dependence that is typically quadratic-in-field. However, for TaIr$_{1-x}$Rh$_{x}$Te$_4$ with $x\approx 0.78$, the MR has a linear term dominating in low fields that indicates the presence of Dirac cones in the vicinity of the Fermi energy. For TaRhTe$_4$ series the MR is almost isotropic. We have performed electronic structure calculations for isostructural TaIrTe$_4$ and TaRhTe$_4$ together with the projected total density of states. The main difference is appearance of the Rh-band close to the Fermi level.

cond-mat.str-el↗

arXiv2021

Switchable domains in point contacts based on transition metal tellurides

We report resistive switching in voltage biased point contacts (PCs) based on series of van der Waals transition metals tellurides (TMTs) such as MeTe2 (Me=Mo, W) and TaMeTe4 (Me= Ru, Rh, Ir). The switching occurs between a low resistive "metallic-type" state, which is the ground state, and a high resistive "semiconducting-type" state by applying certain bias voltage (<1V), while reverse switching takes place by applying voltage of opposite polarity. The origin of the effect can be formation of domain in PC core by applying a bias voltage, when a strong electric field (about 10kV/cm) modifies the crystal structure and controls its polarization. In addition to the discovery of the switching effect in PCs, we also suggest a simple method of material testing before functionalizing them, which offers a great advantage in finding suitable novel substances. The new functionality of studied TMTs arising from switchable domains in submicron hetero-structures that are promising, e.g., for non-volatile resistive random access memory (RRAM) engineering.

cond-mat.mes-hall↗

arXiv2020

Experimental Evidence of Stable 2$H$ Phase on the Surface of Layered 1$T'$-TaTe$_2$

We report on the low-energy electronic structure of Tantalum ditelluride (1$T'$-TaTe$_2$), one of the charge density wave (CDW) materials from the group V transition metal dichalcogenides using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). We find that the Fermi surface topology of TaTe$_2$ is quite complicated compared to its isovalent compounds such as TaS$_2$, TaSe$_2$, and isostructural compound NbTe$_2$. More importantly, we discover that the surface electronic structure of 1$T'$-TaTe$_2$ has more resemblance to the 2$H$-TaTe$_2$, while the bulk electronic structure has more resemblance to the hypothetical 1$T$-TaTe$_2$. These experimental observations are thoroughly compared with our DFT calculations performed on 1$T$-, 2$H$- and 2$H$ (monolayer)/1$T$- TaTe$_2$. We further notice that the Fermi surface topology is temperature independent up to 180 K, confirming that the 2$H$ phase on the surface is stable up to 180 K and the CDW order is not due to the Fermi surface nesting.

cond-mat.mtrl-sci↗

arXiv2020

Polymorphic PtBi2: Growth, structure and superconducting properties

PtBi$_2$ is a polymorphic system with interesting electronic properties. Here we report optimized crystal growth and structural characterization of pyrite-type and trigonal modification of PtBi$_2$. Selected area electron diffraction, X-ray powder diffraction and further Rietveld refinement confirms that trigonal PtBi$_2$ crystallizes in non-centrosymmetric $P31m$ space group, pyrite-type PtBi$_2$ in $Pa\bar{3}$ space group. Series of Pt$_{1-x}$Rh$_x$Bi$_2$ samples was obtained for $x=0, 0.03, 0.35$ in the trigonal PtBi$_2$ structure. These Pt$_{1-x}$Rh$_x$Bi$_2$ compounds become superconducting where critical temperature increases from $T_c=600$ mK for $x=0$ up to $T_c=2.7$ K for $x=0.35$. Furthermore we calculate the electronic band structure, using the structure parameters obtained. The calculated density of states (DOS) shows a minimum for the stochiometric compound at the Fermi level. These findings warrant further research by broader array of experimental techniques, as well as the effect of the substitution on the non-trivial band structure.

cond-mat.mtrl-sci↗

arXiv2020

Anomalous band renormalization due to high energy $kink$ in the colossal thermoelectric material K$_{0.65}$RhO$_2$

We report on low-energy electronic structure and electronic correlations of K$_{0.65}$RhO$_2$, studied using high-resolution angle-resolved photoemission spectroscopy (ARPES) technique and density functional theory (DFT) calculations. We observe a highly correlated hole pocket on the Fermi surface. We further notice that the correlations are momentum dependent. Most importantly, two $kinks$ at binding energies of 75 meV and 195 meV have been observed from the band dispersion in the vicinity of the Fermi level. While the low energy $kink$ at 75 meV can be understood as a result of the electron-phonon interaction, the presence of high energy $kink$ at 195 meV is totally a new discovery of this system leading to an anomalous band renormalization. Based on systematic analysis of our experimental data, we propose high frequency bosonic excitations as a plausible origin of the high energy anomaly. Further, we notice that the high energy anomaly has important implications in obtaining the colossal thermoelectric power of K$_{0.65}$RhO$_2$.

cond-mat.str-el↗

arXiv2019

Electronic Structure Studies of FeSi: A Chiral Topological System

Most recent observation of topological Fermi arcs on the surface of manyfold degenerate B20 systems, CoSi and RhSi, have attracted enormous research interests. Although an another isostructural system, FeSi, has been predicted to show bulk chiral fermions, it is yet to be clear theoretically and as well experimentally that whether FeSi possesses the topological surface Fermi arcs associated with the exotic chiral fermions in vicinity of the Fermi level. In this contribution, using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), we present the low-energy electronic structure of FeSi. We further report the surface state calculations to provide insights into the surface band structure of FeSi near the Fermi level. Unlike in CoSi or RhSi, FeSi has no topological Fermi arcs near the Fermi level as confirmed both from ARPES and surface state calculations. Further, the ARPES data show spin-orbit coupling (SOC) band splitting of 40 meV, which is in good agreement with bulk band structure calculations. We noticed an anomalous temperature dependent resistivity in FeSi which can be understood through the electron-phonon interactions as we find a Debye energy of 80 meV from the ARPES data.

cond-mat.mtrl-sci↗

arXiv2019

Yanson point-contact spectroscopy of Weyl semimetal WTe2

We carried out point contact (PC) investigation of WTe2 single crystals. We measured Yanson d2V/dI2 PC spectra of the electron-phonon interaction (EPI) in WTe2. The spectra demonstrate a main phonon peak around 8 meV and a shallow second maximum near 16 meV. Their position is in line with the calculation of the EPI spectra of WTe2 in the literature, albeit phonons with higher energy are not resolved in our PC spectra. An additional contribution to the spectra is present above the phonon energy, what may be connected with the peculiar electronic band structure and need to be clarified. We detected tiny superconducting features in d2V/dI2 close to zero bias, which broadens by increasing temperature and blurs above 6K. Thus, (surface) superconductivity may exist in WTe2 with a topologically nontrivial state. We found a broad maximum in dV/dI at large voltages (>200 mV) indicating change of conductivity from metallic to semiconducting type. The latter might be induced by the high current density (~10^8 A/cm^2) in the PC and/or local heating, thus enabling the manipulation of the quantum electronic states at the interface in the PC core.

cond-mat.mes-hall↗

arXiv2018

Spectroscopic evidence of topological phase transition in 3D Dirac semimetal Cd$_3$(As$_{1-x}$P$_x$)$_2$

We study the low-energy electronic structure of three-dimensional Dirac semimetal, Cd$_3$(As$_{1-x}$P$_x$)$_2$ [$x$ = 0 and 0.34(3)], by employing the angle-resolved photoemission spectroscopy (ARPES). We observe that the bulk Dirac states in Cd$_3$(As$_{0.66}$P$_{0.34}$)$_2$ are gapped out with an energy of 0.23 eV, contrary to the parent Cd$_3$As$_2$ in which the gapless Dirac states have been observed. Thus, our results confirm the earlier predicted topological phase transition in Cd$_3$As$_2$ with perturbation. We further notice that the critical P substitution concentration, at which the two Dirac points that are spread along the $c$-axis in Cd$_3$As$_2$ form a single Dirac point at $Γ$, is much lower [x$_c$(P)$<$ 0.34(3)] than the predicted value of x$_c$(P)=0.9. Therefore, our results suggest that the nontrivial band topology of Cd$_3$As$_2$ is remarkably sensitive to the P substitution and can only survive over a narrow substitution range, i.e., 0 $\leq$ x (P) $<$ 0.34(3).

cond-mat.mtrl-sci↗