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G. Trambly de Laissardiere

Publications and source records attributed to G. Trambly de Laissardiere.

2 recordsLinked to original sources

Two-dimensional electronic transport in rubrene: the impact of inter-chain coupling

Organic semi-conductors have unique electronic properties and are important systems both at the fundamental level and also for their applications in electronic devices. In this article we focus on the particular case of rubrene which has one of the best electronic transport properties for application purposes. We show that this system can be well simulated by simple tight-binding systems representing one-dimensional (1D) chains that are weakly coupled to their neighboring chains in the same plane. This makes in principle this rubrene system somehow intermediate between 1D and isotropic 2D models. We analyse in detail the dc-transport and terahertz conductivity in the 1D and in the anisotropic 2D models. The transient localisation scenario allows us to reproduce satisfactorily some basics results such as mobility anisotropy and orders of magnitude as well as ac-conductivity in the terahertz range. This model shows in particular that even a weak inter-chain coupling is able to improve notably the propagation along the chains. This suggest also that a strong inter-chain coupling is important to get organic semi-conductors with the best possible transport properties for applicative purposes.

cond-mat.mtrl-sci↗

Stability and electronic structure in hexagonal beta-Al9Mn3Si and phi-Al10Mn3 crystals

The electronic structures of hexagonal beta-Al9Mn3Si and phi-Al10Mn3 are investigated through self-consistent calculations carried out using the LMTO method. This ab-initio approach is combined with an analysis of a simplified hamiltonian model for Al based alloys containing transition metal atoms. Results show a strong effect on an atomic structure stabilisation by an indirect Mn-Mn interaction mediated by conduction electrons over medium range distances (5 Angstrom and more). Both the role and position of Si atoms are explained as well as the origin of large vacancies which characterises these atomic structures. As beta and phi phases are related to Al based quasicrystals and related approximant structures, it yields arguments on the stabilisation of such complex phases.

cond-mat.mtrl-sci↗