arXiv subjects

G. Wolfowicz

Publications and source records attributed to G. Wolfowicz.

4 recordsLinked to original sources

arXiv2019

Correlating dynamic strain and photoluminescence of solid-state defects with stroboscopic x-ray diffraction microscopy

Control of local lattice perturbations near optically-active defects in semiconductors is a key step to harnessing the potential of solid-state qubits for quantum information science and nanoscale sensing. We report the development of a stroboscopic scanning X-ray diffraction microscopy approach for real-space imaging of dynamic strain used in correlation with microscopic photoluminescence measurements. We demonstrate this technique in 4H-SiC, which hosts long-lifetime room temperature vacancy spin defects. Using nano-focused X-ray photon pulses synchronized to a surface acoustic wave launcher, we achieve an effective time resolution of 100 ps at a 25 nm spatial resolution to map micro-radian dynamic lattice curvatures. The acoustically induced lattice distortions near an engineered scattering structure are correlated with enhanced photoluminescence responses of optically-active SiC quantum defects driven by local piezoelectric effects. These results demonstrate a unique route for directly imaging local strain in nanomechanical structures and quantifying dynamic structure-function relationships in materials under realistic operating conditions.

cond-mat.mes-hall↗

arXiv2018

Electrometry by optical charge conversion of deep defects in 4H-SiC

Optically-active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain and temperature. Current sensing techniques take advantage of the relaxation and coherence times of the spin state within these defects. Here we show that the defect charge state can also be used to sense the environment, in particular high frequency (MHz-GHz) electric fields, complementing established spin-based techniques. This is enabled by optical charge conversion of the defects between their photoluminescent and dark charge states, with conversion rate dependent on the electric field (energy density). The technique provides an all-optical high frequency electrometer which is tested in 4H-SiC for both ensembles of divacancies and silicon vacancies, from cryogenic to room temperature, and with a measured sensitivity of ~41 (V/cm)**2 / $\sqrt{Hz}$. Finally, due to the piezoelectric character of SiC, we obtain spatial 3D maps of surface acoustic wave modes in a mechanical resonator.

cond-mat.mes-hall↗

arXiv2015

Decoherence of nuclear spins in the "frozen core" of an electron spin

Hybrid qubit systems combining electronic spins with nearby ("proximate") nuclear spin registers offer a promising avenue towards quantum information processing, with even multi-spin error correction protocols recently demonstrated in diamond. However, for the important platform offered by spins of donor atoms in cryogenically-cooled silicon,decoherence mechanisms of $^{29}$Si proximate nuclear spins are not yet well understood.The reason is partly because proximate spins lie within a so-called "frozen core" region where the donor electronic hyperfine interaction strongly suppresses nuclear dynamics. We investigate the decoherence of a central proximate nuclear qubit arising from quantum spin baths outside, as well as inside, the frozen core around the donor electron. We consider the effect of a very large nuclear spin bath comprising many ($\gtrsim 10^8$) weakly contributing pairs outside the frozen core. We also propose that there may be an important contribution from a few (of order $100$) symmetrically sited nuclear spin pairs ("equivalent pairs"), which were not previously considered as their effect is negligible outside the frozen core. If equivalent pairs represent a measurable source of decoherence, nuclear coherence decays could provide sensitive probes of the symmetries of electronic wavefunctions. For the phosphorus donor system, we obtain $T_{2n}$ values of order 1 second for both the "far bath" and "equivalent pair" models, confirming the suitability of proximate nuclei in silicon as very long-lived spin qubits.

quant-ph↗

arXiv2014

Hyperfine Stark effect of shallow donors in silicon

We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions induced by a donor-dependent central cell potential, allows us to obtain a very reliable picture of the donor wave function within a relatively simple framework. Variational optimization of the 1s donor binding energies calculated with a new trial wave function, in a pseudopotential with two fitting parameters, allows an accurate match of the experimentally determined donor energy levels, while the correct limiting behavior for the electronic density, both close to and far from each impurity nucleus, is captured by fitting the measured contact hyperfine coupling between the donor nuclear and electron spin. We go on to include an external uniform electric field in order to model Stark physics: With no extra ad hoc parameters, variational minimization of the complete donor ground energy allows a quantitative description of the field-induced reduction of electronic density at each impurity nucleus. Detailed comparisons with experimental values for the shifts of the contact hyperfine coupling reveal very close agreement for all the donors measured (P, As, Sb and Bi). Finally, we estimate field ionization thresholds for the donor ground states, thus setting upper limits to the gate manipulation times for single qubit operations in Kane-like architectures: the Si:Bi system is shown to allow for A gates as fast as around 10 MHz.

cond-mat.mes-hall↗