arXiv subjects

G. Y. Guo

Publications and source records attributed to G. Y. Guo.

30 records · Page 2Linked to original sources

arXiv2008

Intrinsic spin Hall effect in platinum metal

Spin Hall effect in metallic Pt is studied with first-principles relativistic band calculations. It is found that intrinsic spin Hall conductivity (SHC) is as large as $\sim 2000 (\hbar/e)(Ω{\rm cm})^{-1}$ at low temperature, and decreases down to $\sim 200 (\hbar/e)(Ω{\rm cm})^{-1}$ at room temperature. It is due to the resonant contribution from the spin-orbit splitting of the doubly degenerated $d$-bands at high-symmetry $L$ and $X$ points near the Fermi level. By modeling these near degeneracies by effective Hamiltonian, we show that SHC has a peak near the Fermi energy and that the vertex correction due to impurity scattering vanishes. We therefore argue that the large spin Hall effect observed experimentally in platinum is of intrinsic nature.

cond-mat.mes-hall↗

arXiv2007

Systematic {\it ab initio} study of the magnetic and electronic properties of all 3d transition metal linear and zigzag nanowires

It is found that all the zigzag chains except the nonmagnetic (NM) Ni and antiferromagnetic (AF) Fe chains which form a twisted two-legger ladder, look like a corner-sharing triangle ribbon, and have a lower total energy than the corresponding linear chains. All the 3d transition metals in both linear and zigzag structures have a stable or metastable ferromagnetic (FM) state. The electronic spin-polarization at the Fermi level in the FM Sc, V, Mn, Fe, Co and Ni linear chains is close to 90% or above. In the zigzag structure, the AF state is more stable than the FM state only in the Cr chain. It is found that the shape anisotropy energy may be comparable to the electronic one and always prefers the axial magnetization in both the linear and zigzag structures. In the zigzag chains, there is also a pronounced shape anisotropy in the plane perpendicular to the chain axis. Remarkably, the axial magnetic anisotropy in the FM Ni linear chain is gigantic, being ~12 meV/atom. Interestingly, there is a spin-reorientation transition in the FM Fe and Co linear chains when the chains are compressed or elongated. Large orbital magnetic moment is found in the FM Fe, Co and Ni linear chains.

cond-mat.mtrl-sci↗

arXiv2007

Optical properties of SiC nanotubes: A systematic $\textit{ab initio}$ study

The band structure and optical dielectric function $ε$ of single-walled zigzag [(3,0),(4,0),(5,0),(6,0),(8,0),(9,0),(12,0),(16,0),(20,0),(24,0)], armchair [(3,3),(4,4),(5,5),(8,8),(12,12),(15,15)], and chiral [(4,2),(6,2),(8,4),(10,4)] SiC-NTs as well as the single honeycomb SiC sheet have been calculated within DFT with the LDA. It is found that all the SiC nanotubes are semiconductors, except the ultrasmall (3,0) and (4,0) zigzag tubes which are metallic. Furthermore, the band gap of the zigzag SiC-NTs which is direct, may be reduced from that of the SiC sheet to zero by reducing the diameter ($D$), though the band gap for all the SiC nanotubes with a diameter larger than ~20 Å$ $ is almost independent of diameter. For the electric field parallel to the tube axis ($E\parallel \hat{z}$), the $ε''$ for all the SiC-NTs with a moderate diameter (say, $D$ $>$ 8 Å$ $) in the low-energy region (0~6 eV) consists of a single distinct peak at ~3 eV. However, for the small diameter SiC nanotubes such as the (4,2),(4,4) SiC-NTs, the $ε''$ spectrum does deviate markedly from this general behavior. In the high-energy region (from 6 eV upwards), the $ε''$ for all the SiC-NTs exhibit a broad peak centered at ~7 eV. For the electric field perpendicular to the tube axis ($E\perp \hat{z}$), the $ε''$ spectrum of all the SiC-NTs except the (4,4), (3,0) and (4,0) nanotubes, in the low energy region also consists of a pronounced peak at around 3 eV whilst in the high-energy region is roughly made up of a broad hump starting from 6 eV. The magnitude of the peaks is in general about half of the magnitude of the corresponding ones for $E\parallel \hat{z}$.

cond-mat.mtrl-sci↗

arXiv2007

Current and strain-induced spin polarization in InGaN/GaN superlattices

The lateral current-induced spin polarization in InGaN/GaN superlattices (SLs) without an applied magnetic field is reported. The fact that the sign of the nonequilibrium spin changes as the current reverses and is opposite for the two edges provides a clear signature for the spin Hall effect. In addition, it is discovered that the spin Hall effect can be strongly manipulated by the internal strains. A theoretical work has also been developed to understand the observed strain induced spin polarization. Our result paves an alternative way for the generation of spin polarized current.

cond-mat.mes-hall↗

arXiv2007

Static dielectric response and Born effective charge of BN nanotubes from {\it ab initio} finite electric field calculations

{\it Ab initio} investigations of the full static dielectric response and Born effective charge of BN nanotubes (BN-NTs) have been performed for the first time using finite electric field method. It is found that the ionic contribution to the static dielectric response of BN-NTs is substantial and also that a pronounced chirality-dependent oscillation is superimposed on the otherwise linear relation between the longitudinal electric polarizability and the tube diameter ($D$), as for a thin dielectric cylinderical shell. In contrast, the transverse dielectric response of the BN-NTs resemble the behavior of a thin (non-ideal) conducting cylindrical shell of a diameter of $D+4$Å$ $, with a screening factor of 2 for the inner electric field. The medium principal component $Z_y^*$ of the Born effective charge corresponding to the transverse atomic displacement tangential to the BN-NT surface, has a pronounced $D$-dependence (but independent of chirality), while the large longitudinal component $Z_z^*$ exhibits a clear chirality dependence (but nearly $D$-independent), suggesting a powerful way to characterize the diameter and chirality of a BN-NT.

cond-mat.mtrl-sci↗

arXiv2006

Systematic {\em ab initio} study of the phase diagram of epitaxially strained SrTiO$_3$

We use density-functional theory with the local-density approximation to study the structural and ferroelectric properties of SrTiO$_3$ under misfit strains. Both the antiferrodistortive (AFD) and ferroelectric (FE) instabilities are considered. The rotation of the oxygen octahedra and the movement of the atoms are fully relaxed within the constraint of a fixed in-plane lattice constant. We find a rich misfit strain-induced phase transition sequence and is obtained only when the AFD distortion is taken into account. We also find that compressive misfit strains induce ferroelectricity in the tetragonal low temperature phase only whilst tensile strains induce ferroelectricity in the orthorhombic phases only. The calculated FE polarization for both the tetragonal and orthorhombic phases increases monotonically with the magnitude of the strains. The AFD rotation angle of the oxygen octahedra in the tetragonal phase increases dramatically as the misfit strain goes from the tensile to compressive strain region whilst it decreases slightly in the orthorhombic (FO4) phase. This reveals why the polarization in the epitaxially strained SrTiO$_3$ would be larger when the tensile strain is applied, since the AFD distortion is found to reduce the FE instability and even to completely suppress it in the small strain region. Finally, our analysis of the average polar distortion and the charge density distribution suggests that both the Ti-O and Sr-O layers contribute significantly to the FE polarization.

cond-mat.mtrl-sci↗

arXiv2006

Conserved Spin and Orbital Angular Momentum Hall Current in a Two-Dimensional Electron System with Rashba and Dresselhaus Spin-orbit Coupling

We study theoretically the spin and orbital angular momentum (OAM) Hall effect in a high mobility two-dimensional electron system with Rashba and Dresselhuas spin-orbit coupling by introducing both the spin and OAM torque corrections, respectively, to the spin and OAM currents. We find that when both bands are occupied, the spin Hall conductivity is still a constant (i.e., independent of the carrier density) which, however, has an opposite sign to the previous value. The spin Hall conductivity in general would not be cancelled by the OAM Hall conductivity. The OAM Hall conductivity is also independent of the carrier density but depends on the strength ratio of the Rashba to Dresselhaus spin-orbit coupling, suggesting that one can manipulate the total Hall current through tuning the Rashba coupling by a gate voltage. We note that in a pure Rashba system, though the spin Hall conductivity is exactly cancelled by the OAM Hall conductivity due to the angular momentum conservation, the spin Hall effect could still manifest itself as nonzero magnetization Hall current and finite magnetization at the sample edges because the magnetic dipole moment associated with the spin of an electron is twice as large as that of the OAM. We also evaluate the electric field-induced OAM and discuss the origin of the OAM Hall current. Finally, we find that the spin and OAM Hall conductivities are closely related to the Berry vector (or gauge) potential.

cond-mat.mes-hall↗

arXiv2006

Band structure of honeycomb photonic crystal slabs

Two-dimensional (2D) honeycomb photonic crystals with cylinders and connecting walls have the potential to have a large full band gap. In experiments, 2D photonic crystals do not have an infinite height, and therefore, we investigate the effects of the thickness of the walls, the height of the slabs and the type of the substrates on the photonic bands and gap maps of 2D honeycomb photonic crystal slabs. The band structures are calculated by the plane wave expansion method and the supercell approach. We find that the slab thickness is a key parameter affecting the band gap size while on the other hand the wall thickness hardly affact the gap size. For symmetric photonic crystal slabs with lower dielectric claddings, the height of the slabs needs to be sufficiently large to maintain a band gap. For asymmetric claddings, the projected band diagrams are similar to that of symmetric slabs as long as the dielectric constants of the claddings do not differ greatly.

cond-mat.mtrl-sci↗

arXiv2006

Robust half-metallic antiferromagnets La$A$VOsO$_6$ and La$A$Mo$Y$O$_6$ ($A$ = Ca, Sr, Ba; $Y$ = Re, Tc) from first-principles calculations

We have theoretically designed three families of the half-metallic (HM) antiferromagnets (AFM), namely, La$A$VOsO$_6$, La$A$MoTcO$_6$ and La$A$MoReO$_6$ ($A$ = Ca, Sr, Ba), based on a systematic {\it ab initio} study of the ordered double perovskites La$ABB'$O$_6$ with the possible $B$ and $B'$ pairs from all the 3$d$, 4$d$ and 5$d$ transtion metal elements being considered. Electronic structure calculations based on first-principles density-functional theory with generalized gradient approximation (GGA) for more than sixty double perovskites LaCa$BB'$O$_6$ have been performed using the all-electron full-potential linearized augmented-plane-wave method. The found HM-AFM state in these materials survives the full {\it ab initio} lattice constant and atomic position optimizations which were carried out using frozen-core full potential projector augmented wave method. It is found that the HM-AFM properties predicted previously in some of the double perovskites would disappear after the full structural optimizations. The AFM is attributed to both the superexchange mechanism and the generalized double exchange mechanism via the $B$ ($t_{2g}$) - O (2$p_π$) - $B'$ ($t_{2g}$) coupling and the latter is also believed to be the origin of the HM. Finally, in our search for the HM-AFMs, we find La$A$CrTcO$_6$ and La$A$CrReO$_6$ to be AFM insulators of an unconventional type in the sense that the two antiferromagnetic coupled ions consist of two different elements and that the two spin-resolved densities of states are no longer the same.

cond-mat.mtrl-sci↗

arXiv2005

Second-harmonic generation and linear electro-optical coefficients of BN nanotubes

A systematic {\it ab initio} study of the second-order nonlinear optical properties of BN nanotubes within density functional theory in the local density approximation has been performed. Highly accurate full-potential projector augmented-wave method was used. Specifically, the second-harmonic generation ($χ_{abc}^{(2)}$) and linear electro-optical ($r_{abc}$) coefficients of a large number of the single-walled zigzag, armchair and chiral BN nanotubes (BN-NT) as well as the double-walled zigzag (12,0)@(20,0) BN nanotube and the single-walled zigzag (12,0) BN-NT bundle have been calculated. Importantly, unlike carbon nanotubes, both the zigzag and chiral BN-NTs are found to exhibit large second-order nonlinear optical behavior with the $χ_{abc}^{(2)}$ and $r_{abc}$ coefficients being up to thirty times larger than that of bulk BN in both zinc-blende and wurtzite structures, indicating that BN-NTs are promising materials for nonlinear optical and opto-electric applications. Though the interwall interaction in the double-walled BN-NTs is found to reduce the second-order nonlinear optical coefficients significantly, the interwall interaction in the single-walled BN-NT bundle has essentially no effect on the nonlinear optical properties. The prominant features in the spectra of $χ_{abc}^{(2)}(-2ω,ω,ω)$ of the BN-NTs are suscessfully correlated with the features in the linear optical dielectric function $ε(ω)$ in terms of single-photon and two-photon resonances.

cond-mat.mtrl-sci↗

arXiv2005

Ab initio calculation of intrinsic spin Hall effect in semiconductors

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs and AlAs is large $[\sim 100 (\hbar/e)(Ωcm)^{-1}]$, showing the possibility of spin Hall effect beyond the four band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the $ac$ spin Hall conductivity in the semiconductors is large in pure as well as doped semiconductors.

cond-mat.mtrl-sci↗

arXiv2003

Nature of Orbital Ordering in La_0.5Sr_1.5MnO_4 is Studied by Soft X-ray Linear Dichroism

We found that the conventional model of orbital ordering of 3x^2-r^2/3y^2-r^2 type in the eg states of La_0.5Sr_1.5MnO_4 is incompatible with measurements of linear dichroism in the Mn 2p-edge x-ray absorption, whereas these eg states exhibit predominantly cross-type orbital ordering of x^2-z^2/y^2-z^2. LDA+U band-structure calculations reveal that such a cross-type orbital ordering results from a combined effect of antiferromagnetic structure, Jahn-Teller distortion, and on-site Coulomb interactions.

cond-mat.str-el↗