arXiv subjects

Gabriele Giacomini

Publications and source records attributed to Gabriele Giacomini.

23 records · Page 2Linked to original sources

arXiv2017

Performance of active edge pixel sensors

To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin planar n-on-p pixel sensors with active edge have been designed and produced by LPNHE and FBK foundry. Two detector module prototypes, consisting of pixel sensors connected to FE-I4B readout chips, have been tested with beams at CERN and DESY. In this paper the performance of these modules are reported. In particular the lateral extension of the detection volume, beyond the pixel region, is investigated and the results show high hit-efficiency also at the detector edge, even in presence of guard rings.

physics.ins-det↗

arXiv2016

The INFN-FBK Phase-2 R{\&}D Program

We report on the 3-year INFN ATLAS-CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6-inch p-type wafers. The technology and the design will be optimized and qualified for extreme radiation hardness (2e16 neq cm-2). Pixel layouts compatible with present (for testing) and future (RD53 65nm) front-end chips of ATLAS and CMS are considered. The paper covers the main aspects of the research program, from the sensor design and fabrication technology, to the results of initial tests performed on the first prototypes.

physics.ins-det↗

arXiv2016

Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given.

physics.ins-det↗

arXiv2014

Modeling of ion beam induced charge sharing experiments for the design of high resolution position sensitive detectors

In a multi-electrode device, the motion of free charge carriers generated by ionizing radiation induces currents on all the electrodes surrounding the active region [1]. The amount of charge induced in each sensitive electrode is a function of the device geometry, the transport parameters and the generation profile. Hence this charge sharing effect allows the signal from each sensitive electrode to provide information about the electrical characteristics of the device, as well as information on the location and the profile of each ionization track. The effectiveness of such approach was recently demonstrated in Ion Beam Induced Charge (IBIC) experiments carried out using a 2 MeV He microbeam scanning over a sub-100 lm scale silicon device, where the ion strike location point was evaluated through a comparative analysis of the charge induced in two independent surface electrodes coupled to independent data acquisition systems [2]. In this report, we show that the Monte Carlo method [3] can be efficiently exploited to simulate this IBIC experiment and to model the experimental data, shedding light on the role played by carrier diffusion, electronic noise and ion beam spot size on the induction of charge in the sensitive electrodes. Moreover, the Monte Carlo method shows that information on the ion strike position can be obtained from the charge signals from the sensitive electrodes.

cond-mat.mtrl-sci↗

arXiv2013

Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades

In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these demands. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch.

physics.ins-det↗