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Gang Liu

Publications and source records attributed to Gang Liu.

At least 235 records · Page 13Linked to original sources
arXiv2014

Wide-Gap Semiconducting Graphene from Nitrogen-Seeded SiC

All carbon electronics based on graphene has been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of semiconducting graphene. While chemical functionalization was thought to be a route to semiconducting graphene, disorder in the chemical adsorbates, leading to low mobilities, have proved to be a hurdle in its production. We demonstrate a new approach to produce semiconducting graphene that uses a small concentration of covalently bonded surface nitrogen, not as a means to functionalize graphene, but instead as a way to constrain and bend graphene. We demonstrate that a submonolayer concentration of nitrogen on SiC is sufficient to pin epitaxial graphene to the SiC interface as it grows, causing the graphene to buckle. The resulting 3-dimensional modulation of the graphene opens a band-gap greater than 0.7eV in the otherwise continuous metallic graphene sheet.

cond-mat.mtrl-sci↗
arXiv2013

Total variation with overlapping group sparsity for image deblurring under impulse noise

The total variation (TV) regularization method is an effective method for image deblurring in preserving edges. However, the TV based solutions usually have some staircase effects. In this paper, in order to alleviate the staircase effect, we propose a new model for restoring blurred images with impulse noise. The model consists of an $\ell_1$-fidelity term and a TV with overlapping group sparsity (OGS) regularization term. Moreover, we impose a box constraint to the proposed model for getting more accurate solutions. An efficient and effective algorithm is proposed to solve the model under the framework of the alternating direction method of multipliers (ADMM). We use an inner loop which is nested inside the majorization minimization (MM) iteration for the subproblem of the proposed method. Compared with other methods, numerical results illustrate that the proposed method, can significantly improve the restoration quality, both in avoiding staircase effects and in terms of peak signal-to-noise ratio (PSNR) and relative error (ReE).

math.NA↗
arXiv2013

Interstitial-Boron Solution Strengthened WB$_{3+x}$

By means of variable-composition evolutionary algorithm coupled with density functional theory and in combination with aberration-corrected high-resolution transmission electron microscopy experiments, we have studied and characterized the composition, structure and hardness properties of WB$_{3+x}$ ($x$ $<$ 0.5). We provide robust evidence for the occurrence of stoichiometric WB$_3$ and non-stoichiometric WB$_{3+x}$ both crystallizing in the metastable $hP$16 ($P6_3/mmc$) structure. No signs for the formation of the highly debated WB$_4$ (both $hP$20 and $hP$10) phases were found. Our results rationalize the seemingly contradictory high-pressure experimental findings and suggest that the interstitial boron atom is located in the tungsten layer and vertically interconnect with four boron atoms, thus forming a typical three-center boron net with the upper and lower boron layers in a three-dimensional covalent network, which thereby strengthen the hardness.

cond-mat.mtrl-sci↗
arXiv2013

Transport in Suspended Monolayer and Bilayer Graphene Under Strain: A New Platform for Material Studies

We develop two types of graphene devices based on nanoelectromechanical systems (NEMS), that allows transport measurement in the presence of in situ strain modulation. Different mobility and conductance responses to strain were observed for single layer and bilayer samples. These types of devices can be extended to other 2D membranes such as MoS2, providing transport, optical or other measurements with in situ strain.

cond-mat.mtrl-sci↗
arXiv2012

3-manifolds with nonnegative Ricci curvature

For a noncompact 3-manifold with nonnegative Ricci curvature, we prove that either it is diffeomorphic to $\mathbb{R}^3$ or the universal cover splits. As a corollary, it confirms a conjecture of Milnor in dimension 3.

math.DG↗
arXiv2012

Duflo's conjecture for the branching to the Iwasawa $AN$-subgroup

The purpose of this paper is to prove Duflo's conjecture for $(G,π, AN)$ where $G$ is a simple Lie group of Hermitian type and $π$ is a discrete series of $G$ and $AN$ is the maximal exponential solvable subgroup for an Iwasawa decomposition $G=KAN$. This is essentially reduced from the following general theorem we prove in this paper: let $G$ be a connected semisimple Lie group . Then a strongly elliptic $G$-coadjoint orbit $\mathcal{O}$ is holomorphic if and only if $\text{p}(\mathcal{O})$ is an open $AN$-coadjoint orbit, where $\text{p} : \mathfrak{g}^* \longrightarrow (\mathfrak{a}\oplus\mathfrak{n})^*$ is the natural projection.

math.RT↗
arXiv2012

Visualizing Electrical Breakdown and ON/OFF States in Electrically Switchable Suspended Graphene Break Junctions

Narrow gaps are formed in suspended single to few layer graphene devices using a pulsed electrical breakdown technique. The conductance of the resulting devices can be programmed by the application of voltage pulses, with a voltage of 2.5V~4.5V corresponding to an ON pulse and voltages ~8V corresponding to OFF pulses. Electron microscope imaging of the devices shows that the graphene sheets typically remain suspended and that the device conductance tends to zero when the observed gap is large. The switching rate is strongly temperature dependent, which rules out a purely electromechanical switching mechanism. This observed switching in suspended graphene devices strongly suggests a switching mechanism via atomic movement and/or chemical rearrangement, and underscores the potential of all-carbon devices for integration with graphene electronics.

cond-mat.mes-hall↗
arXiv2011

Local volume comparison for Kahler manifolds

On Kahler manifolds with Ricci curvature lower bound, assuming the real analyticity of the metric, we establish a sharp relative volume comparison theorem for small balls. The model spaces being compared to are complex space forms, i.e, Kahler manifolds with constant holomorphic sectional curvature. Moreover, we give an example showing that on Kahler manifolds, the pointwise Laplacian comparison theorem does not hold when the Ricci curvature is bounded from below.

math.DG↗
arXiv2011

Kahler manifolds with Ricci curvature lower bound

On Kahler manifolds with Ricci curvature bounded from below, we establish some theorems which are counterparts of some classical theorems in Riemannian geometry, for example, Bishop-Gromov's relative volume comparison, Bonnet-Meyers theorem, and Yau's gradient estimate for positive harmonic functions. The tool is a Bochner type formula reflecting the Kahler structure.

math.DG↗
arXiv2011

A short proof to the rigidity of volume entropy

In this note we give a short proof to the rigidity of volume entropy. The result says that for a closed manifold with Ricci curvature bounded from below, if the universal cover has maximal volume entropy, then it is the space form. This theorem was first proved by F. Ledrappier and X. Wang in [1].

math.DG↗
arXiv2010

Magnetoconductance Oscillations in High-Mobility Suspended Bilayer and Trilayer Graphene

We report pronounced magnetoconductance oscillations observed on suspended bilayer and trilayer graphene devices with mobilities up to 270,000 cm2/Vs. For bilayer devices, we observe conductance minima at all integer filling factors nu between 0 and -8, as well as a small plateau at ν=1/3. For trilayer devices, we observe features at nu=-1, -2, -3 and -4, and at ν~0.5 that persist to 4.5K at B=8T. All of these features persist for all accessible values of Vg and B, and could suggest the onset of symmetry breaking of the first few Landau (LL) levels and fractional quantum Hall states.

cond-mat.mes-hall↗
arXiv2010

Quantum Transport and Field Induced Insulating States in Bilayer Graphene pnp Junctions

We perform transport measurements in high quality bilayer graphene pnp junctions with suspended top gates. At a magnetic field B=0, we demonstrate band gap opening by an applied perpendicular electric field, with an On/Off ratio up to 20,000 at 260mK. Within the band gap, the conductance decreases exponentially by 3 orders of magnitude with increasing electric field, and can be accounted for by variable range hopping with a gate-tunable density of states, effective mass, and localization length. At large B, we observe quantum Hall conductance with fractional values, which arise from equilibration of edge states between differentially-doped regions, and the presence of an insulating state at filling factor ν=0. Our work underscores the importance of bilayer graphene for both fundamental interest and technological applications.

cond-mat.mes-hall↗
arXiv2010

An Improved Dilaton Background in Soft-Wall Model

We adopted the form of v.e.v. of the bulk scalar field proposed by P.Zhang in this paper, and changed the dilaton background from $e^{-κ^2z^2}$ to $e^{-κ^2z^2+αz}$ accordingly. The calculation shows that, as if we choose proper parameters, we can get a better result than both the present soft-wall models and the hard-wall model while keeping Regge behavior unchanged.

hep-ph↗