arXiv subjects

Gang Zhang

Publications and source records attributed to Gang Zhang.

At least 163 records · Page 9Linked to original sources

arXiv2012

Thermal Contact Resistance Across Nanoscale Silicon Dioxide and Silicon Interface

Silicon dioxide and silicon (SiO$_{2}$/Si) interface plays a very important role in semiconductor industry. However, at nanoscale, its interfacial thermal properties haven't been well understood so far. In this paper, we systematically study the interfacial thermal resistance (Kapitza resistance) of a heterojunction composed of amorphous silicon dioxide and crystalline silicon by using molecular dynamics simulations. Numerical results have shown that Kapitza resistance at SiO$_{2}$/Si interface depends on the interfacial coupling strength remarkably. In the weak interfacial coupling limit, Kapitza resistance depends on both the detailed interfacial structure and the length of the heterojunction, showing large fluctuation among different samples. In contrast, it is almost insensitive to the detailed interfacial structure or the length of the heterojunction in the strong interfacial coupling limit, giving rise to a nearly constant value around 0.9 $\times10^{-9}$ m$^{2}$KW$^{-1}$ at room temperature. Moreover, the temperature dependent Kapitza resistance in the strong interfacial coupling limit has also been examined. Our study provides useful guidance to the thermal management and heat dissipation across nanoscale SiO$_{2}$/Si interface, in particular for the design of silicon nanowire based nano electronics and photonics devices.

cond-mat.mtrl-sci↗

arXiv2012

Impacts of Atomistic Coating on Thermal Conductivity of Germanium Nanowires

By using non-equilibrium molecular dynamics simulations, we demonstrated that thermal conductivity of Germanium nanowires can be reduced more than 25% at room temperature by atomistic coating. There is a critical coating thickness beyond which thermal conductivity of the coated nanowire is larger than that of the host nanowire. The diameter dependent critical coating thickness and minimum thermal conductivity are explored. Moreover, we found that interface roughness can induce further reduction of thermal conductivity in coated nanowires. From the vibrational eigen-mode analysis, it is found that coating induces localization for low frequency phonons, while interface roughness localizes the high frequency phonons. Our results provide an available approach to tune thermal conductivity of nanowires by atomic layer coating.

cond-mat.mtrl-sci↗

arXiv2012

Anomalous Heat Conduction and Anomalous Diffusion in Low Dimensional Nanoscale Systems

Thermal transport is an important energy transfer process in nature. Phonon is the major energy carrier for heat in semiconductor and dielectric materials. In analogy to Ohm's law for electrical conductivity, Fourier's law is a fundamental rule of heat transfer in solids. It states that the thermal conductivity is independent of sample scale and geometry. Although Fourier's law has received great success in describing macroscopic thermal transport in the past two hundreds years, its validity in low dimensional systems is still an open question. Here we give a brief review of the recent developments in experimental, theoretical and numerical studies of heat transport in low dimensional systems, include lattice models, nanowires, nanotubes and graphenes. We will demonstrate that the phonon transports in low dimensional systems super-diffusively, which leads to a size dependent thermal conductivity. In other words, Fourier's law is breakdown in low dimensional structures.

cond-mat.stat-mech↗

arXiv2012

Phononics: Manipulating heat flow with electronic analogs and beyond

The form of energy termed heat that typically derives from lattice vibrations, i.e. the phonons, is usually considered as waste energy and, moreover, deleterious to information processing. However, with this colloquium, we attempt to rebut this common view: By use of tailored models we demonstrate that phonons can be manipulated like electrons and photons can, thus enabling controlled heat transport. Moreover, we explain that phonons can be put to beneficial use to carry and process information. In a first part we present ways to control heat transport and how to process information for physical systems which are driven by a temperature bias. Particularly, we put forward the toolkit of familiar electronic analogs for exercising phononics; i.e. phononic devices which act as thermal diodes, thermal transistors, thermal logic gates and thermal memories, etc.. These concepts are then put to work to transport, control and rectify heat in physical realistic nanosystems by devising practical designs of hybrid nanostructures that permit the operation of functional phononic devices and, as well, report first experimental realizations. Next, we discuss yet richer possibilities to manipulate heat flow by use of time varying thermal bath temperatures or various other external fields. These give rise to a plenty of intriguing phononic nonequilibrium phenomena as for example the directed shuttling of heat, a geometrical phase induced heat pumping, or the phonon Hall effect, that all may find its way into operation with electronic analogs.

cond-mat.mes-hall↗

arXiv2011

A Universal Gauge for Thermal Conductivity of Silicon Nanowires With Different Cross Sectional Geometries

By using molecular dynamics simulations, we study thermal conductivity of silicon nanowires (SiNWs) with different cross sectional geometries. It is found that thermal conductivity decreases monotonically with the increase of surface-to-volume ratio (SVR). More interestingly, a simple universal linear dependence of thermal conductivity on SVR is observed for SiNWs with modest cross sectional area (larger than 20 nm^2), regardless of the cross sectional geometry. As a result, among different shaped SiNWs with the same cross sectional area, the one with triangular cross section has the lowest thermal conductivity. Our study provides not only a universal gauge for thermal conductivity among different cross sectional geometries, but also a designing guidance to tune thermal conductivity by geometry.

cond-mat.mes-hall↗

arXiv2011

Phonon Coherent Resonance and Its Effect on Thermal Transport In Core-Shell Nanowires

We study heat current autocorrelation function and thermal conductivity in core-shell nanowires by using molecular dynamics simulations. Interestingly, a remarkable oscillation effect in heat current autocorrelation function is observed in core-shell NWs, while the same effect is absent in pure silicon nanowires, nanotube structures and random doped nanowires. Detailed characterizations of the oscillation signal reveal that this intriguing oscillation is caused by the coherent resonance effect of the transverse and longitudinal phonon modes. This phonon resonance results in the localization of the longitudinal modes, which leads to the reduction of thermal conductivity in core-shell nanowires. Our study reveals that a coherent mechanism can be used to tune thermal conductivity in core-shell nanowires.

cond-mat.mtrl-sci↗

arXiv2011

Electric Current Focusing Efficiency in Graphene Electric Lens

In present work, we theoretically study the electron wave's focusing phenomenon in a single layered graphene pn junction(PNJ) and obtain the electric current density distribution of graphene PNJ, which is in good agreement with the qualitative result in previous numerical calculations [Science, 315, 1252 (2007)]. In addition, we find that for symmetric PNJ, 1/4 of total electric current radiated from source electrode can be collected by drain electrode. Furthermore, this ratio reduces to 3/16 in a symmetric graphene npn junction. Our results obtained by present analytical method provide a general design rule for electric lens based on negative refractory index systems.

cond-mat.mes-hall↗

arXiv2010

Remarkable Reduction of Thermal Conductivity in Silicon Nanotubes

We propose to reduce the thermal conductivity of silicon nanowires (SiNWs) by introducing small hole at the centre, i.e. construct silicon nanotube (SiNT) structures. Our numerical results demonstrate that a very small hole (only 1% reduction in cross section area) can induce a 35% reduction in room temperature thermal conductivity. Moreover, with the same cross section area, thermal conductivity of SiNT is only about 33% of that of SiNW at room temperature. The spatial distribution of vibrational energy reveals that localization modes are concentrated on the inner and outer surfaces of SiNTs. The enhanced surface-to-volume ratio in SiNTs reduces the percentage of delocalized modes, which is believed to be responsible for the reduction of thermal conductivity. Our study suggests SiNT is a promising thermoelectric material with low thermal conductivity.

cond-mat.mtrl-sci↗

arXiv2010

How to Improve The Accuracy of Equilibrium Molecular Dynamics For Computation of Thermal Conductivity?

Equilibrium molecular dynamics (EMD) simulations through Green-Kubo formula (GKF) have been widely used in the study of thermal conductivity of various materials. However, there exist controversial simulation results which have huge discrepancies with experimental ones in literatures. In this paper, we demonstrate that the fluctuation in calculated thermal conductivity is due to the uncertainty in determination of the truncation time, which is related to the ensemble and size dependent phonon relaxation time. We thus propose a new scheme in the direct integration of heat current autocorrelation function (HCACF) and a nonzero correction in the double-exponential-fitting of HCACF to describe correctly the contribution to thermal conductivity from low frequency phonons. By using crystalline Silicon (Si) and Germanium (Ge) as examples, we demonstrate that our method can give rise to the values of thermal conductivity in an excellent agreement with experimental ones.

cond-mat.stat-mech↗

arXiv2010

Molecular Dynamics Simulations of Heat Conduction in Nanostructures: Effect of Heat Bath

We investigate systematically the impacts of heat bath used in molecular dynamics simulations on heat conduction in nanostructures exemplified by Silicon Nanowires (SiNWs) and Silicon/Germanium nano junction. It is found that multiple layers of Nosé-Hoover heat bath are required to reduce the temperature jump at the boundary, while only a single layer of Langevin heat bath is sufficient to generate a linear temperature profile with small boundary temperature jump. Moreover, an intermediate value of heat bath parameter is recommended for both Nosé-Hoover and Langevin heat bath in order to achieve correct temperature profile and thermal conductivity in homogeneous materials. Furthermore, the thermal rectification ratio in Si/Ge thermal diode depends on the choice of Nosé-Hoover heat bath parameter remarkably, which may lead to non-physical results. In contrast, Langevin heat bath is recommended because it can produce consistent results with experiment in large heat bath parameter range.

cond-mat.mes-hall↗

arXiv2010

Violation of Fourier's Law and Anomalous Heat Diffusion in Silicon

We study heat conduction and diffusion in silicon nanowires (SiNWs) systematically by using non-equilibrium molecular dynamics. It is found that the thermal conductivity of SiNWs diverges with the length, even when the length is up to 1,100 nm which is much longer than the phonon mean free path. Moreover, an anomalous heat diffusion is observed which is believed to be responsible for the length dependent thermal conductivity. Our results provide strong evidence that Fourier's law of heat conduction is not valid in low dimensional nanostructures.

cond-mat.mtrl-sci↗

arXiv2009

Size dependent thermoelectric properties of silicon nanowires

By using first-principles tight-binding electronic structure calculation and Boltzmann transport equation, we investigate the size dependence of thermoelectric properties of silicon nanowires (SiNWs). With cross section area increasing, the electrical conductivity increases slowly, while the Seebeck coefficient reduces remarkably. This leads to a quick reduction of cooling power factor with diameter. Moreover, the figure of merit also decreases with transverse size. Our results demonstrate that in thermoelectric application, NW with small diameter is preferred. We also predict that isotopic doping can increase the value of ZT significantly. With 50% 29Si doping (28Si0.529Si0.5 NW), the ZT can be increased by 31%.

cond-mat.mtrl-sci↗

arXiv2009

Thermal Rectification In Asymmetric Graphene Ribbons

In this paper, heat flux in graphene nano ribbons has been studied by using molecular dynamics simulations. It is found that the heat flux runs preferentially along the direction of decreasing width, which demonstrates significant thermal rectification effect in the asymmetric graphene ribbons. The dependence of rectification ratio on the vertex angle and the length are also discussed. Compared to the carbon nanotube based one-dimensional thermal rectifier, graphene nano ribbons have much higher rectification ratio even in large scale. Our results demonstrate that asymmetric graphene ribbon might be a promising structure for practical thermal (phononics) device.

cond-mat.mtrl-sci↗

arXiv2009

Carbon Nanocone: A Promising Thermal Rectifier

With molecular dynamics simulations, we demonstrate very obvious thermal rectification in large temperature range from 200 to 400 K in nanocone. We also observe that the rectification of nanocone does not depend on the length very sensitively, which is in stark contrast with the nanotube thermal rectifier in which the rectification decreases dramatically as the length increases. Our work demonstrates that carbon nanocone is a promising practical phononic device.

cond-mat.mes-hall↗

arXiv2007

Ultralow Thermal Conductivity of Isotope-Doped Silicon Nanowires

The thermal conductivity of silicon nanowires (SiNWs) is investigated by molecular dynamics (MD) simulation. It is found that the thermal conductivity of SiNWs can be reduced exponentially by isotopic defects at room temperature. The thermal conductivity reaches the minimum, which is about 27% of that of pure 28Si NW, when doped with fifty percent isotope atoms. The thermal conductivity of isotopic-superlattice structured SiNWs depends clearly on the period of superlattice. At a critical period of 1.09 nm, the thermal conductivity is only 25% of the value of pure Si NW. An anomalous enhancement of thermal conductivity is observed when the superlattice period is smaller than this critical length. The ultra-low thermal conductivity of superlattice structured SiNWs is explained with phonon spectrum theory.

cond-mat.mtrl-sci↗

arXiv2006

Quantum controlled phase gate and cluster states generation via two superconducting quantum interference devices in a cavity

A scheme for implementing 2-qubit quantum controlled phase gate (QCPG) is proposed with two superconducting quantum interference devices (SQUIDs) in a cavity. The gate operations are realized within the two lower flux states of the SQUIDs by using a quantized cavity field and classical microwave pulses. Our scheme is achieved without any type of measurement, does not use the cavity mode as the data bus and only requires a very short resonant interaction of the SQUID-cavity system. As an application of the QCPG operation, we also propose a scheme for generating the cluster states of many SQUIDs.

quant-ph↗

arXiv2005

Wall "thickness" effects on Raman spectrum shift, thermal conductivity, and Young's modulus of single walled nanotubes

We theoretically demonstrate that at a finite temperature, an effective wall thickness of a single walled carbon nanotube (SWNT) should be $W=W_s+W_d$, where $W_s$ is the static thickness defined as the extension of the outmost electronic orbit and $W_d$ the dynamic thickness due to thermal vibration of atoms. Both molecular simulations and a theoretical analysis show that $W_d$ is proportional to $\sqrt{T}$. We find that the increase of dynamic thickness with temperature is the main mechanism of Raman spectrum shift. The introduction of dynamic thickness changes some conclusions about the Young's modulus and reduces the values of thermal conductivity.

cond-mat.mes-hall↗

arXiv2005

Thermal Conductivity of Nanotubes Revisited: Effects of Chirality, Isotope Impurity, Tube Length, and Temperature

We study the dependence of thermal conductivity of single walled nanotubes (SWNT) on chirality, isotope impurity, tube length and temperature by nonequilibrium molecular dynamics method with accurate potentials. It is found that, contrary to electronic conductivity, the thermal conductivity is insensitive to the chirality. The isotope impurity, however, can reduce the thermal conductivity up to 60% and change the temperature dependence behavior. We also found that the tube length dependence of thermal conductivity is different for nanotubes of different radius at different temperatures.

cond-mat.mes-hall↗