arXiv subjects

Gangjian Jin

Publications and source records attributed to Gangjian Jin.

6 recordsLinked to original sources

arXiv2026

Evolution from Landau Quantization to Discrete Scale Invariance Revealed by Quantum Oscillations in Topological Materials

Dirac materials have been a unique solid state platform for exploring relativistic quantum phenomena including supercritical atomic collapse, which leads to emergent discrete scale symmetry and logperiodic quantum oscillations. In the relativistic regime, the fundamental effect in quantum electrodynamics, vacuum polarization, can further modulate the atomic collapselike state by screening bare charges but is rarely harnessed in condensed matter system. Here, we report a continuous progression from low field Shubnikov de Haas oscillations to high field log periodic oscillations in the Dirac material HfTe5, with both phenomena modulated by Fermi surface anisotropy. This maps the transition from single particle Landau levels to an interaction-driven, discrete scale invariant energy spectrum of quasi-bound states. Crucially, our findings suggest vacuum polarization provides a compelling mechanism for renormalizing the effective impurity charge, quantitatively explaining the carrier-density dependent scale factor. By revealing the intricate interplay between Landau quantization, many body electronic screening, and scale-symmetry breaking, our results establish Dirac solids as a controllable platform for exploring relativistic vacuum effects and emergent novel symmetry.

cond-mat.mtrl-sci↗

arXiv2025

Phonon-scattering-induced quantum linear magnetoresistance up to room temperature

The realization of quantum transport effects at elevated temperatures has long intrigued researchers due to the implications for unveiling novel physics and developing quantum devices. In this work, we report remarkable quantum linear magnetoresistance (LMR) in the Weyl semiconductor tellurium at high temperatures of 40-300 K under strong magnetic fields up to 60 T. At high fields, the Weyl band features a large energy gap between the lowest and first Landau levels, which suppresses thermal excitation and preserves Landau quantization at high temperatures. The LMR is observed as long as majority carriers remain in the lowest Landau level without requiring monochromaticity, allowing it to persist up to room temperature. The inverse relationship between the LMR slope and temperature provides clear evidence that quantum LMR originates from high-temperature phonon scattering in the quantum limit, firstly demonstrating a theoretical prediction made nearly fifty years ago. This study highlights the key role of electron-phonon interaction and reveals an innovative quantum mechanism for achieving high-temperature LMR, fundamentally distinct from previous findings. Our results bridge a gap in the understanding of phonon-mediated quantum-limit physics and establish strong magnetic fields at high temperatures as a promising platform for exploring novel quantum phenomena.

cond-mat.mes-hall↗

arXiv2025

Shubnikov-de Haas oscillations and planar Hall effect in HfTe2

Layered transition-metal dichalcogenide (TMD) HfTe2 is a topological semimetal candidate with increasing attentions recently. The map of the Fermi surface is of interest and importance to understand its properties. Here we present a study of Shubnikov-de Haas (SdH) oscillations and planar Hall effect (PHE) in HfTe2. The single crystals grown by flux method show the largest unsaturated magnetoresistance (MR) effect of 1.1*104 % at 14 T and 2 K. The angle-resolved SdH oscillations reveal that the Fermi surface consists of three pockets with different anisotropy. In addition, we observe PHE and anisotropic MR (AMR) effect in the material for a wide temperature range. The effective mass, carrier density and quantum transport mobility are quantified in the system, and the Berry phase is discussed. Our work provides crucial insights into the electronic structure and the Fermi surface of the semimetal.

cond-mat.other↗

arXiv2025

Metamagnetic ripples in the UTe2 high magnetic field phase diagram

The heavy fermion metamagnet uranium ditelluride possesses two distinct magnetic field--induced superconducting states. One of these superconductive phases resides at magnetic fields immediately below a first-order metamagnetic transition to a field--polarized paramagnetic state at a field strength $H_m$, while the other exists predominantly above $H_m$. However, little is known about the microscopic properties of this polarized paramagnetic state. Here we report pulsed magnetic field measurements tracking the evolution of $H_m$ for polar and azimuthal inclinations in the vicinity of the crystallographic $b-a$ plane. We uncover a region of the phase diagram at high fields $>$ 50 T with a ripple-like non-monotonic dependence of $H_m$ on the orientation of field. Within this ripple in the metamagnetic transition surface, $H_m$ exhibits an anomalous temperature dependence. Our results point towards the presence of complex magnetic interactions and possible magnetic sub-phases at high magnetic fields in UTe$_2$, which may have important implications for the manifestation of exotic field-induced superconductivity.

cond-mat.str-el↗

arXiv2024

Even-integer Quantum Hall Effect in an Oxide Caused by Hidden Rashba Effect

In the presence of high magnetic field, quantum Hall systems usually host both even- and odd-integer quantized states because of lifted band degeneracies. Selective control of these quantized states is challenging but essential to understand the exotic ground states and manipulate the spin textures. Here, we study the quantum Hall effect in Bi2O2Se thin films. In magnetic fields as high as 50 T, we observe only even-integer quantum Hall states, but no sign of odd-integer states. However, when reducing the thickness of the epitaxial Bi2O2Se film to one unit cell, we observe both odd- and even-integer states in this Janus (asymmetric) film grown on SrTiO3. By means of a Rashba bilayer model based on ab initio band structures of Bi2O2Se thin films, we can ascribe the absence of odd-integer states in thicker films to the hidden Rasbha effect, where the local inversion symmetry breaking in two sectors of the [Bi2O2]2+ layer yields opposite Rashba spin polarizations, which compensate with each other. In the one unit cell Bi2O2Se film grown on SrTiO3, the asymmetry introduced by top surface and bottom interface induces a net polar field. The resulting global Rashba effect lifts the band degeneracies present in the symmetric case of thicker films.

cond-mat.mes-hall↗

arXiv2023

Large upper critical fields and dimensionality crossover of superconductivity in infinite-layer nickelate La$_{0.8}$Sr$_{0.2}$NiO$_{2}$

The recently emerging superconductivity in infinite-layer nickelates, with isostructure and isoelectron of cuprates, provides a new platform to explore the pairing mechanism of high-temperature superconductors. In this work, we studied the upper critical field ($H_{\rm{c2}}$) of a high-quality La$_{0.8}$Sr$_{0.2}$NiO$_{2}$ thin film with superconducting transition temperature, $T_{\rm{c}}$ = 18.8 K, using high magnetic field up to 56 T. A very large $H_{\rm{c2}}$, $\sim$ 40 T for $H$ $\Arrowvert$ $c$ and $\sim$ 52 T for $H$ $\Arrowvert$ $ab$, was confirmed, which suggests that infinite-layer nickelates also have great application potential. The anisotropy of $H_{\rm{c2}}$ monotonically decreases from $\sim$ 10 near $T_{\rm{c}}$ to $\sim$ 1.5 at 2 K. Angle dependence of $H_{\rm{c2}}$ confirms the crossover of superconductivity from two-dimensional (2D) to three-dimensional (3D) as the temperature decreases. We discussed that the interstitial orbital effect causes the weakening of anisotropy. The observed abnormal upturning of $H_{\rm{c2}}$ at low temperatures is found to be a universal behavior independent of film quality and rare earth elements. Therefore, it should not be the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state due to the fact that it is in the dirty limit and insensitive to disorder.

cond-mat.supr-con↗