arXiv subjects

Gaobo Xu

Publications and source records attributed to Gaobo Xu.

8 recordsLinked to original sources

arXiv2025

Test of LGAD as Potential Next-Generation {\mu}SR Spectrometer Detectors

Muon Spin Rotation/Relaxation/Resonance ($\mu$SR) is a versatile and powerful non-destructive technology for investigating the magnetic properties of materials at the microscopic level. The $\mu$SR technique typically utilizes fully spin polarized beams of positive muons generated at particle accelerator facilities and measures the evolution of the muon spin polarization inside a sample to extract information about the local magnetic environment in materials. With the development of accelerator technologies, intensities of muon beams are being continuously improved, which will cause a pile-up problem to the $\mu$SR spectrometer. The first muon source in China, named MELODY, is currently under construction and will be a pulsed source of muons operated at a repetition frequency of only 1 Hz due to limitations of the accelerator system at CSNS. Consequently, there is a strong motivation to operate MELODY at significantly higher muon intensities. This necessitates an upgrade of the detector system inside the spectrometer, which should be smaller and faster to accommodate the increased intensity per pulse of muons. The Low Gain Avalanche Diode (LGAD), characterized by a typical pulse width of 2 ns and a segmentation size in the centimeters range, has the potential to significantly improve the counting rates of $\mu$SR spectrometers that utilize a high intensity pulsed muon source. Thus, it is expected that the LGAD detector is a promising candidate to enhance the performance of $\mu$SR spectrometers at the new MELODY muon source.To validate this, tests on the LGAD were conducted at the ISIS pulsed muon source at the Rutherford Appleton Laboratory, UK. This paper will describe the setup of the candidate LGAD devices and the subsequent analysis of the experiment data.

physics.ins-det↗

arXiv2024

The Performance of AC-coupled Strip LGAD developed by IHEP

The AC-coupled Strip LGAD (Strip AC-LGAD) is a novel LGAD design that diminishes the density of readout electronics through the use of strip electrodes, enabling the simultaneous measurement of time and spatial information. The Institute of High Energy Physics has designed a long Strip AC-LGAD prototype with a strip electrode length of 5.7 mm and pitches of 150 $μm$, 200 $μm$, and 250 $μm$. Spatial and timing resolutions of the long Strip AC-LGAD are studied by pico-second laser test and beta source tests. The laser test demonstrates that spatial resolution improves as the pitch size decreases, with an optimal resolution achieved at 8.3 $μ$m. Furthermore, the Beta source test yields a timing resolution of 37.6 ps.

physics.ins-det↗

arXiv2023

The performance of large-pitch AC-LGAD with different N+ dose

AC-Coupled LGAD (AC-LGAD) is a new 4D detector developed based on the Low Gain Avalanche Diode (LGAD) technology, which can accurately measure the time and spatial information of particles. The Institute of High Energy Physics (IHEP) designed a large-size AC-LGAD with a pitch of 2000~\SI{}{\micro\metre} and AC pad of 1000~\SI{}{\micro\metre}, and explored the effect of N+ layer dose on the spatial resolution and time resolution. The spatial resolution varied from 36~\SI{}{\micro\metre} to 16~\SI{}{\micro\metre} depending on N+ dose for a charge corresponding to about 12 minimum ionizing particles. The jitter component of the time resolution does not change significantly with different N+ doses, and it is about 15-17 ps measured by laser. The AC-LGAD with a low N+ dose has a large attenuation factor and better spatial resolution in the central region between pads. In these specific conditions, large signal attenuation factor and low noise level are beneficial to improve the spatial resolution of the AC-LGAD sensor.

physics.ins-det↗

arXiv2023

Characterization of the response of IHEP-IME LGAD with shallow carbon to Gamma Irradiation

Low Gain Avalanche Detectors (LGAD) for the High-Granularity Timing Detector (HGTD) are crucial in reducing pileups in the High-Luminosity Large Hadron Collider. Numerous studies have been conducted on the bulk irradiation damage of LGADs. However, few studies have been carried out on the surface irradiation damage of LGAD sensors with shallow carbon implantation. In this paper, the IHEP-IME LGADs with shallow carbon implantation were irradiated up to 2 MGy using gamma irradiation to investigate surface damage. Important characteristic parameters, including leakage currents, breakdown voltage (BV), inter-pad resistances, and capacitances, were tested before and after irradiation. The results showed that the leakage current and BV increased after irradiation, whereas overall inter-pad resistance exhibited minimal change and remained above $10^9\ Ω$ before and after irradiation. Capacitance was found to be less than 4.5 pF with a slight decrease in the gain layer depletion voltage (V$_{gl}$) after irradiation. No parameter affected by the inter-pad separation was observed before and after irradiation. All characteristic parameters meet the requirements of HGTD, and this design can be used to further optimization.

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arXiv2022

Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling

We report precise TCAD simulations of IHEP-IME-v1 Low Gain Avalanche Diode (LGAD) calibrated by secondary ion mass spectroscopy (SIMS). Our setup allows us to evaluate the leakage current, capacitance, and breakdown voltage of LGAD, which agree with measurements' results before irradiation. And we propose an improved LGAD Radiation Damage Model (LRDM) which combines local acceptor removal with global deep energy levels. The LRDM is applied to the IHEP-IME-v1 LGAD and able to predict the leakage current well at -30 $^{\circ}$C after an irradiation fluence of $ Φ_{eq}=2.5 \times 10^{15} ~n_{eq}/cm^{2}$. The charge collection efficiency (CCE) is under development.

physics.ins-det↗

arXiv2022

Design and testing of LGAD sensor with shallow carbon implantation

The low gain avalanche detectors (LGADs) are thin sensors with fast charge collection which in combination with internal gain deliver an outstanding time resolution of about 30 ps. High collision rates and consequent large particle rates crossing the detectors at the upgraded Large Hadron Collider (LHC) in 2028 will lead to radiation damage and deteriorated performance of the LGADs. The main consequence of radiation damage is loss of gain layer doping (acceptor removal) which requires an increase of bias voltage to compensate for the loss of charge collection efficiency and consequently time resolution. The Institute of High Energy Physics (IHEP), Chinese Academy of Sciences (CAS) has developed a process based on the Institute of Microelectronics (IME), CAS capability to enrich the gain layer with carbon to reduce the acceptor removal effect by radiation. After 1 MeV neutron equivalent fluence of 2.5$\times$10$^{15}$ n$_{eq}$/cm$^{2}$, which is the maximum fluence to which sensors will be exposed at ATLAS High Granularity Timing Detector (HGTD), the IHEP-IME second version (IHEP-IMEv2) 50 $μ$m LGAD sensors already deliver adequate charge collection > 4 fC and time resolution < 50 ps at voltages < 400 V. The operation voltages of these 50 $μ$m devices are well below those at which single event burnout may occur.

physics.ins-det↗

arXiv2022

Low Gain Avalanche Detectors with Good Time Resolution Developed by IHEP and IME for ATLAS HGTD project

This paper shows the simulation and test results of 50um thick Low Gain Avalanche Detectors (LGAD) sensors designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Microelectronics of the Chinese Academy of Sciences (IME). Three wafers have been produced with four different gain layer implant doses each. Different production processes, including variation in the n++ layer implant energy and carbon co-implantation were used. Test results show that the IHEP-IME sensors with the higher dose of gain layer have lower breakdown voltages and higher gain layer voltages from capacitance-voltage properties, which are consistent with the TCAD simulation. Beta test results show that the time resolution of IHEP-IME sensors is better than 35ps when operated at high voltage and the collected charges of IHEP-IME sensors are larger than 15fC before irradiation, which fulfill the required specifications of sensors before irradiations for the ATLAS HGTD project.

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arXiv2021

Effects of shallow carbon and deep N++ layer on the radiation hardness of IHEP-IME LGAD sensors

Low Gain Avalanche Diode (LGAD) is applied for the High-Granularity Timing Detector (HGTD), and it will be used to upgrade the ATLAS experiment. The first batch IHEP-IME LGAD sensors were designed by the Institute of High Energy Physics (IHEP) and fabricated by the Institute of Microelectronics (IME). Three IHEP-IME sensors (W1, W7 and W8) were irradiated by the neutrons up to the fluence of 2.5 x 10^15 n_eq/cm^2 to study the effect of the shallow carbon and deep N++ layer on the irradiation hardness. Taking W7 as a reference, W1 has an extra shallow carbon applied, and W8 has a deeper N++ layer.

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