arXiv subjects

Gaurab Rimal

Publications and source records attributed to Gaurab Rimal.

17 recordsLinked to original sources

arXiv2025

Band Alignment Tuning from Charge Transfer in Epitaxial SrIrO$_3$/SrCoO$_3$ Superlattices

Understanding charge transfer at oxide interfaces is crucial for designing materials with emergent electronic and magnetic properties, especially in systems where strong electron correlations and spin-orbit coupling coexist. SrIrO$_3$/SrCoO$_3$ (SIO/SCO) superlattices offer a unique platform to explore these effects due to their contrasting electronic structures and magnetic behaviors. Building on past theory based on continuity of O 2p band alignment, we employ density functional theory (DFT) to model electron transfer from Ir to Co across the SIO/SCO interface. To characterize these effects, we synthesized epitaxial SIO/SCO superlattices via molecular beam epitaxy. Structural and transport measurements confirmed high crystallinity, metallic behavior, and suppression of Kondo scattering that has been reported in uniform SIO films. Further characterization via X-ray absorption spectroscopy (XAS) revealed orbital anisotropy and valence changes consistent with interfacial charge transfer. Co K- and L$_{2,3}$-edge and Ir L$_2$-edge spectra verified electron donation from Ir to Co, stabilizing the perovskite SCO phase and tuning the electronic structure of SIO via hole-doping. O K-edge XAS showed band alignment shifts in the SIO layer consistent with DFT predictions. Our work here provides a pathway for engineering oxide heterostructures with tailored magnetic and electronic properties.

cond-mat.mtrl-sci↗

arXiv2025

New Materials, New Functionalities: Molecular Beam Epitaxy of Ultra-High Conductivity Oxides

Understanding fundamental properties of materials is necessary for all modern electronic technologies. Toward this end, the fabrication of new ultrapure thin film materials is critical to discover and understand novel properties that can allow further development of technology. Oxide materials are a vast material class abound with diverse properties, and, therefore, harnessing such phases is critical for realizing emerging technologies. Pushing forward, however, requires understanding basic properties of insulating, semiconducting and metallic oxides, as well as the more complex phases that arise out of strong electronic correlations unique to this class of materials. In this review, we will focus on one of the unique aspects of oxides: the ultra-high conductivity metallic state, which can be a critical component for future all-oxide microelectronics such as low-loss interconnects and gate-metals, spintronics, as well as future quantum technologies that employ emergent magnetic or superconducting ground states. Like most oxides, a critical challenge to understanding and ultimately integrating high-conductivity metals into new technologies is the ability to synthesize high-quality materials. Therefore, we will frame the discussions in the context of epitaxial film growth via molecular beam epitaxy (MBE), which has provided insights into the electronic behavior of specific materials while providing samples with unprecedented quality. We will highlight and underscore how MBE has enabled developments and deeper understanding of their properties and how it plays a critical role in the future of this unique class of materials.

cond-mat.mtrl-sci↗

arXiv2024

Origin of the Unusual Temperature Dependence of the Upper Critical Field of Kagome Superconductor CsV3Sb5: Multiple Bands or van Hove Singularities?

Van Hove singularities (vHs) located close to the Fermi level in Kagome superconductors AV3Sb5 (A = K, Rb, Cs) have profound influence on their electronic and transport characteristics. Specifically, magneto-transport and susceptibility measurements on CsV3Sb5 reveal an anomalous temperature dependence of the upper critical field H_c2 (T), characterized by a pronounced upward curvature for both in-plane and c-axis magnetic fields, with zero-temperature H_c2 values of ~6.0 T and ~1.2 T, respectively. Our theoretical analysis, using a newly developed single-band model incorporating vHs and gap anisotropy, suggests that the observed upper critical field behavior is predominantly driven by the anisotropy of the Fermi velocity originating from vHs, instead of multi-band effects or gap anisotropy. Increased electron scattering introduced by proton irradiation defects smears out the vHs, reduces anisotropy, and recovers the conventional H_c2 (T) behavior, corroborating our proposed model.

cond-mat.supr-con↗

arXiv2024

Stoichiometry-induced ferromagnetism in altermagnetic candidate MnTe

The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered antiferromagnetic structure, high Neel temperature (TN ~ 310 K) and semiconducting properties. We present results on molecular beam epitaxy (MBE) grown MnTe/InP(111) films. Here, it is found that the electronic and magnetic properties are driven by the natural stoichiometry of MnTe. Electronic transport and in situ angle-resolved photoemission spectroscopy show the films are natively metallic with the Fermi level in the valence band and the band structure is in good agreement with first principles calculations for altermagnetic spin-splitting. Neutron diffraction confirms that the film is antiferromagnetic with planar anisotropy and polarized neutron reflectometry indicates weak ferromagnetism, which is linked to a slight Mn-richness that is intrinsic to the MBE grown samples. When combined with the anomalous Hall effect, this work shows that the electronic response is strongly affected by the ferromagnetic moment. Altogether, this highlights potential mechanisms for controlling altermagnetic ordering for diverse spintronic applications.

cond-mat.mtrl-sci↗

arXiv2024

Strain-dependent Insulating State and Kondo Effect in Epitaxial SrIrO$_{3}$ Films

The large spin-orbit coupling in iridium oxides plays a significant role in driving novel physical behaviors, including emergent phenomena in the films and heterostructures of perovskite and Ruddlesden-Popper iridates. In this work, we study the role of epitaxial strain on the electronic behavior of thin SrIrO$_3$ films. We find that compressive epitaxial strain leads to metallic transport behavior, but a slight tensile strain shows gapped behavior. Temperature-dependent resistivity measurements are used to examine different behaviors in films as a function of strain. We find Kondo contributions to the resistivity, with stronger effects in films that are thinner and under less compressive epitaxial strain. These results show the potential to tune SrIrO$_3$ into Kondo insulating states and open possibilities for a quantum critical point that can be controlled with strain in epitaxial films.

cond-mat.mtrl-sci↗

arXiv2023

Advances in Complex Oxide Quantum Materials Through New Approaches to Molecular Beam Epitaxy

Molecular beam epitaxy (MBE), a workhorse of the semiconductor industry, has progressed rapidly in the last few decades in the development of novel materials. Recent developments in condensed matter and materials physics have seen the rise of many novel quantum materials that require ultra-clean and high-quality samples for fundamental studies and applications. Novel oxide-based quantum materials synthesized using MBE have advanced the development of the field and materials. In this review, we discuss the recent progress in new MBE techniques that have enabled synthesis of complex oxides that exhibit "quantum" phenomena, including superconductivity and topological electronic states. We show how these techniques have produced breakthroughs in the synthesis of 4d and 5d oxide films and heterostructures that are of particular interest as quantum materials. These new techniques in MBE offer a bright future for the synthesis of ultra-high quality oxide quantum materials.

cond-mat.mtrl-sci↗

arXiv2023

Emergent magnetism with continuous control in the ultrahigh conductivity layered oxide PdCoO2

The current challenge to realizing continuously tunable magnetism lies in our inability to systematically change properties such as valence, spin, and orbital degrees of freedom as well as crystallographic geometry. Here, we demonstrate that ferromagnetism can be externally turned on with the application of low-energy helium implantation and subsequently erased and returned to the pristine state via annealing. This high level of continuous control is made possible by targeting magnetic metastability in the ultra-high conductivity, non-magnetic layered oxide PdCoO2 where local lattice distortions generated by helium implantation induce emergence of a net moment on the surrounding transition metal octahedral sites. These highly-localized moments communicate through the itinerant metal states which triggers the onset of percolated long-range ferromagnetism. The ability to continuously tune competing interactions enables tailoring precise magnetic and magnetotransport responses in an ultra-high conductivity film and will be critical to applications across spintronics.

cond-mat.mtrl-sci↗

arXiv2023

Thickness-dependent, tunable anomalous Hall effect in hydrogen-reduced PdCoO$_2$ thin films

It was recently reported that hydrogen-reduced PdCoO$_2$ films exhibit strong perpendicular magnetic anisotropy (PMA) with sign tunable anomalous Hall effect (AHE). Here, we provide extensive thickness-dependent study of this system, and show that the electronic and magnetic properties are strongly dependent on the thickness and annealing conditions. Below a critical thickness of 25 nm, AHE shows clear PMA with hysteresis, and its sign changes from positive to negative, and back to positive as the annealing temperature increases from 100 $^\circ$C to 400 $^\circ$C. Beyond the critical thickness, both PMA and AHE hysteresis disappear and the AHE sign remains positive regardless of the annealing parameters. Our results show that PMA may have a large role on AHE sign-tunability and that below the critical thickness, competition between different AHE mechanisms drives this sign change.

cond-mat.mtrl-sci↗

arXiv2023

Interaction of in-plane Drude carrier with c-axis phonon in $\rm PdCoO_2$

We performed polarized reflection and transmission measurements on the layered conducting oxide $\rm PdCoO_2$ thin films. For the ab-plane, an optical peak near $\Omega$ $\approx$ 750 cm$^{-1}$ drives the scattering rate $\gamma^{*}(\omega)$ and effective mass $m^{*}(\omega)$ of the Drude carrier to increase and decrease respectively for $\omega$ $\geqq$ $\Omega$. For the c-axis, a longitudinal optical phonon (LO) is present at $\Omega$ as evidenced by a peak in the loss function Im[$-1/\varepsilon_{c}(\omega)$]. Further polarized measurements in different light propagation (q) and electric field (E) configurations indicate that the Peak at $\Omega$ results from an electron-phonon coupling of the ab-plane carrier with the c-LO phonon, which leads to the frequency-dependent $\gamma^{*}(\omega)$ and $m^{*}(\omega)$. This unusual interaction was previously reported in high-temperature superconductors (HTSC) between a non-Drude, mid-infrared band and a c-LO. On the contrary, it is the Drude carrier that couples in $\rm PdCoO_2$. The coupling between the ab-plane Drude carrier and c-LO suggests that the c-LO phonon may play a significant role in the characteristic ab-plane electronic properties of $\rm PdCoO_2$ including the ultra-high dc-conductivity, phonon-drag, and hydrodynamic electron transport.

cond-mat.mtrl-sci↗

arXiv2022

Diffusion-assisted molecular beam epitaxy of CuCrO$_2$ thin films

Using molecular beam epitaxy (MBE) to grow multi-elemental oxides (MEO) is generally challenging, partly due to difficulty in stoichiometry control. Occasionally, if one of the elements is volatile at the growth temperature, stoichiometry control can be greatly simplified using adsorption-controlled growth mode. Otherwise, stoichiometry control remains one of the main hurdles to achieving high quality MEO film growths. Here, we report another kind of self-limited growth mode, dubbed diffusion-assisted epitaxy, in which excess species diffuses into the substrate and leads to the desired stoichiometry, in a manner similar to the conventional adsorption-controlled epitaxy. Specifically, we demonstrate that using diffusion-assisted epitaxy, high-quality epitaxial CuCrO$_2$ films can be grown over a wide growth window without precise flux control using MBE.

cond-mat.mtrl-sci↗

arXiv2022

Disorder-enhanced effective masses and deviations from Matthiessen's rule in PdCoO$_2$ thin films

The observation of hydrodynamic transport in the metallic delafossite PdCoO$_2$ has increased interest in this family of highly conductive oxides, but experimental studies so far have mostly been confined to bulk crystals. In this work, the development of high-quality thin films of PdCoO$_2$ has enabled a thorough study of the conductivity as a function of film thickness using both dc transport and time-domain THz spectroscopy. With increasing film thickness from 12 nm to 102 nm, the residual resistivity decreases and we observe a large deviation from Matthiessen's rule (DMR) in the temperature dependence of the resistivity. We find that the complex THz conductivity is well fit by a single Drude term. We fit the data to extract the spectral weight and scattering rate simultaneously. The temperature dependence of the Drude scattering rate is found to be nearly independent of the residual resistivity and cannot be the primary mechanism for the observed DMR. Rather, we observe large changes in the spectral weight as a function of disorder, changing by a factor of 1.5 from the most disordered to least disordered films. We believe this corresponds to a mass enhancement of $\geq 2$ times the value of the bulk effective mass which increases with residual disorder. This suggests that the mechanism behind the DMR observed in dc resistivity is primarily driven by changes in the electron mass. We discuss the possible origins of this behavior including the possibility of disorder-enhanced electron-phonon scattering, which can be systematically tuned by film thickness.

cond-mat.str-el↗

arXiv2022

Anomalous Hall effect in electrolytically reduced PdCoO$_2$ thin films

PdCoO$_2$, being highly conductive and anisotropic, is a promising material for fundamental and technological applications. Recently, reduced PdCoO$_2$ thin films were shown to exhibit ferromagnetism after hydrogen annealing. Here, we demonstrate that when PdCoO$_2$ film is used as a cathode for dissociation of water, hydrogen generated around the film reduces the material and leads to the emergence of anomalous Hall effect (AHE). Moreover, we demonstrate that the sign of the AHE signal can also be changed with the electrolytic process. Electrolytically-modified PdCoO$_2$ films may open a door to applications in spintronics.

cond-mat.mtrl-sci↗

arXiv2021

Layer-Resolved Many-Electron Interactions in Delafossite PdCoO2 from Standing-Wave Photoemission Spectroscopy

When a three-dimensional material is constructed by stacking different two-dimensional layers into an ordered structure, new and unique physical properties can emerge. An example is the delafossite PdCoO2, which consists of alternating layers of metallic Pd and Mott-insulating CoO2 sheets. To understand the nature of the electronic coupling between the layers that gives rise to the unique properties of PdCoO2, we revealed its layer-resolved electronic structure combining standing-wave X-ray photoemission spectroscopy and ab initio many-body calculations. Experimentally, we have decomposed the measured valence band spectrum into contributions from Pd and CoO2 layers. Computationally, we find that many-body interactions in Pd and CoO2 layers are highly different. Holes in the CoO2 layer interact strongly with charge-transfer excitons in the same layer, whereas holes in the Pd layer couple to plasmons in the Pd layer. Interestingly, we find that holes in states hybridized across both layers couple to both types of excitations (charge-transfer excitons or plasmons), with the intensity of photoemission satellites being proportional to the projection of the state onto a given layer. This establishes satellites as a sensitive probe for inter-layer hybridization. These findings pave the way towards a better understanding of complex many-electron interactions in layered quantum materials.

cond-mat.mtrl-sci↗

arXiv2021

Effective reduction of PdCoO2 thin films via hydrogenation and sign tunable anomalous Hall effect

PdCoO2 , belonging to a family of triangular oxides called delafossite, is one of the most conducting oxides. Its in-plane conductivity is comparable to those of the best metals, and exhibits hydrodynamic electronic transport with extremely long mean free path at cryogenic temperatures. Nonetheless, it is nonmagnetic despite the presence of the cobalt ion. Here, we show that a mild hydrogenation process reduces PdCoO2 thin films to an atomically-mixed alloy of PdCo with strong out-of-plane ferromagnetism and sign-tunable anomalous Hall effect. Considering that many other compounds remain little affected under a similar hydrogenation condition, this discovery may provide a route to creating novel spintronic heterostructures combining strong ferromagnetism, involving oxides and other functional materials.

cond-mat.mtrl-sci↗

arXiv2020

Topological Hall Effect in a Topological Insulator Interfaced with a Magnetic Insulator

A topological insulator (TI) interfaced with a magnetic insulator (MI) may host an anomalous Hall effect (AHE), a quantum AHE, and a topological Hall effect (THE). Recent studies, however, suggest that coexisting magnetic phases in TI/MI heterostructures may result in an AHE-associated response that resembles a THE but in fact is not. This article reports a genuine THE in a TI/MI structure that has only one magnetic phase. The structure shows a THE in the temperature range of T=2-3 K and an AHE at T=80-300 K. Over T=3-80 K, the two effects coexist but show opposite temperature dependencies. Control measurements, calculations, and simulations together suggest that the observed THE originates from skyrmions, rather than the coexistence of two AHE responses. The skyrmions are formed due to an interfacial DMI interaction. The DMI strength estimated is substantially higher than that in heavy metal-based systems.

cond-mat.mtrl-sci↗

arXiv2019

Growth of metallic delafossite PdCoO2 by molecular beam epitaxy

The Pd, and Pt based ABO2 delafossites are a unique class of layered, triangular oxides with 2D electronic structure and a large conductivity that rivals the noble metals. Here, we report successful growth of the metallic delafossite PdCoO2 by molecular beam epitaxy (MBE). The key challenge is controlling the oxidation of Pd in the MBE environment where phase-segregation is driven by the reduction of PdCoO2 to cobalt oxide and metallic palladium. This is overcome by combining low temperature (300 °C) atomic layer-by-layer MBE growth in the presence of reactive atomic oxygen with a post-growth high-temperature anneal. Thickness dependence (5-265 nm) reveals that in the thin regime (<75 nm), the resistivity scales inversely with thickness, likely dominated by surface scattering; for thicker films the resistivity approaches the values reported for the best bulk-crystals at room temperature, but the low temperature resistivity is limited by structural twins. This work shows that the combination of MBE growth and a post-growth anneal provides a route to creating high quality films in this interesting family of layered, triangular oxides.

cond-mat.mtrl-sci↗

arXiv2018

Interface enhanced magnetic anisotropy in Pt/EuO films

We report proximity effects of spin-orbit coupling in EuO$_{1-x}$ films capped with a Pt overlayer. Transport measurements suggest that current flows along a conducting channel at the interface between the Pt and EuO. The temperature dependence of the resistivity picks up the critical behaviors of EuO, i.e., the metal-to-insulator transition. We also find an unusual enhancement of the magnetic anisotropy in this structure from its bulk value which results from strong spin-orbit coupling across the Pt/EuO interface.

cond-mat.mtrl-sci↗