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Gaurang R. Bhatt

Publications and source records attributed to Gaurang R. Bhatt.

4 recordsLinked to original sources

Frequency-stable nanophotonic microcavities via integrated thermometry

Field-deployable integrated photonic devices co-packaged with electronics will enable important applications such as optical interconnects, quantum information processing, precision measurements, spectroscopy, and microwave generation. Significant progress has been made over the past two decades on increasing the functional complexity of photonic chips. However, a critical challenge that remains is the lack of scalable techniques to overcome thermal perturbations arising from the environment and co-packaged electronics. Here, we demonstrate a fully integrated scheme to monitor and stabilize the temperature of a high-Q microresonator on a Si-based chip, which can serve as a photonic frequency reference. Our approach relies on a thin-film metallic resistor placed directly above the microcavity, acting as an integrated resistance thermometer, enabling unique mapping of the cavity's absolute resonance wavelength to the thermometer's electrical resistance. Following a one-time calibration, the microresonator can be accurately and repeatably tuned to any desired absolute resonance wavelength using thermometry alone with a root-mean squared wavelength error of <0.8 pm over a timespan of days. We frequency-lock a distributed feedback (DFB) laser to the microresonator and demonstrate a 48x reduction in its frequency drift, resulting in its center wavelength staying within +-0.5 pm of the mean over the duration of 50 hours in the presence of significant ambient fluctuations, outperforming many commercial DFB and wavelength-locker-based laser systems. Finally, we stabilize a soliton mode-locked Kerr comb without the need for photodetection, paving the way for Kerr-comb-based photonic devices that can potentially operate in the desired mode-locked state indefinitely.

physics.optics

High performance integrated graphene electro-optic modulator at cryogenic temperature

High performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low temperatures because they rely on tuning mechanisms that degrade with decreasing temperature. Graphene modulators are a promising alternative, since graphene's intrinsic carrier mobility increases at low temperature. Here we demonstrate an integrated graphene-based electro-optic modulator whose 14.7 GHz bandwidth at 4.9 K exceeds the room-temperature bandwidth of 12.6 GHz. The bandwidth of the modulator is limited only by high contact resistance, and its intrinsic RC-limited bandwidth is 200 GHz at 4.9 K.

physics.app-ph

Integrated near-field thermo-photovoltaics for on-demand heat recycling

The energy transferred via thermal radiation between two surfaces separated by nanometers distances (near-field) can be much larger than the blackbody limit. However, realizing a reconfigurable platform that utilizes this energy exchange mechanism to generate electricity in industrial and space applications on-demand, remains a challenge. The challenge lies in designing a platform that can separate two surfaces by a small and tunable gap while simultaneously maintaining a large temperature differential. Here, we present a fully integrated, reconfigurable and scalable platform operating in near-field regime that performs controlled heat extraction and energy recycling. Our platform relies on an integrated nano-electromechanical system (NEMS) that enables precise positioning of a large area thermal emitter within nanometers distances from a room-temperature germanium photodetector to form a thermo-photovoltaic (TPV) cell. We show over an order of magnitude higher power generation $\mathrm{P_{gen} \sim 1.25 \, μW \cdot cm^{-2}}$ from our TPV cell by tuning the gap between a hot emitter ($\mathrm{T_E \sim 880 \, K}$) and the cold photodetector ($\mathrm{T_D \sim 300 \, K}$) from $\mathrm{\sim 500 \, nm}$ to $\mathrm{\sim 100 \, nm}$. The significant enhancement in $\mathrm{P_{gen}}$ at such small distances is a clear indication of near-field heat transfer effect. Our electrostatically controlled NEMS switch consumes negligible tuning power ($\mathrm{P_{gen}/P_{NEMS} \sim 10^4}$) and relies on conventional silicon-based process technologies.

physics.app-ph

Low-loss composite photonic platform based on 2D semiconductor monolayers

Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic doping. The optical properties of TMDs have been shown to change drastically with doping in the wavelength range near the excitonic resonances. However, little is known about the effect of doping on the optical properties of TMDs away from these resonances, where the material is transparent and therefore could be leveraged in photonic circuits. Here, we probe the electro-optic response of monolayer TMDs at near infrared (NIR) wavelengths (i.e. deep in the transparency regime), by integrating them on silicon nitride (SiN) photonic structures to induce strong light$-$matter interaction with the monolayer. We dope the monolayer to carrier densities of ($7.2 \pm 0.8$) $\times$ $10^{13} \textrm{cm}^{-2}$, by electrically gating the TMD using an ionic liquid. We show strong electro-refractive response in monolayer tungsten disulphide (WS$_2$) at NIR wavelengths by measuring a large change in the real part of refractive index $Δ$n = $0.53$, with only a minimal change in the imaginary part $Δ$k = $0.004$. The doping induced phase change ($Δ$n), compared to the induced absorption ($Δ$k) measured for WS$_2$ ($Δ$n/$Δ$k $\sim 125$), a key metric for photonics, is an order of magnitude higher than the $Δ$n/$Δ$k for bulk materials like silicon ($Δ$n/$Δ$k $\sim 10$), making it ideal for various photonic applications. We further utilize this strong tunable effect to demonstrate an electrostatically gated SiN-WS$_2$ phase modulator using a WS$_2$-HfO$_2$ (Hafnia)-ITO (Indium Tin Oxide) capacitive configuration, that achieves a phase modulation efficiency (V$_π$L) of 0.8 V $\cdot$ cm with a RC limited bandwidth of 0.3 GHz.

physics.app-ph