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Gaurav Nath

Publications and source records attributed to Gaurav Nath.

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Self-assembled filament layers in drying sessile droplets: from morphology to electrical conductivity

Controlling the deposition of filaments, such as nanowires and nanotubes, from evaporating droplets is critical for the performance of emerging technologies like flexible sensors and printed electronics. The final deposit morphology strongly governs functional properties, such as electrical conductivity, yet remains challenging to control. In this work, we numerically investigate how filament length, stiffness, and concentration affect deposition patterns during the drying process. We compare reaction-limited and diffusion-limited evaporation regimes, demonstrating that their distinct velocity fields and flow magnitudes fundamentally alter filament arrangement. While diffusion-limited evaporation drives the ``coffee-ring effect", compromising network uniformity, reaction-limited evaporation suppresses edge accumulation, promoting centered conductive deposits. We map out the spatial variation of filament alignment - tangential at the contact line, radial in the intermediate region, and random near the center. Longer filaments tend to favour more tangential alignment overall and suppress edge accumulation. We find that by tuning the evaporation regime, filament deposition can lead to significantly lower percolation thresholds and significantly higher conductivity exponents. These results quantify the link between evaporation kinetics and microstructure, providing guidelines for optimizing conductive network formation in printed electronics.

cond-mat.soft

Reaction-limited evaporation for the color-gradient lattice Boltzmann model

We present a method to achieve reaction-limited evaporation for the color-gradient lattice Boltzmann multicomponent model. Our approach involves a systematic way to remove fluid mass from the interface region in order to achieve evaporation rates similar to those in a reaction-limited regime. Through various tests, our method demonstrates accurate and consistent results for different interface shapes across a wide range of evaporation flux magnitudes. A single free parameter is required to choose the evaporation sites where fluid mass is exchanged between the components. We find that at unit density ratio, this single parameter allows for the correct description of an arbitrarily shaped interface with an error of less than 5%. For density contrasts, accurate results are observed for lower evaporation flux magnitudes and density ratios. Our proposed method can be applied to isothermal reaction-limited scenarios, such as evaporation in pure vapor or under a gas draft. It can also handle weakly space-time-dependent fluxes, making it suitable for specific non-isothermal applications such as drop evaporation from heated substrates.

physics.flu-dyn