arXiv subjects

Gavin Burnell

Publications and source records attributed to Gavin Burnell.

25 records · Page 2Linked to original sources

arXiv2017

Frustration and thermalisation in an artificial magnetic quasicrystal

We have created and studied artificial magnetic quasicrystals based on Penrose tiling patterns of interacting nanomagnets that lack the translational symmetry of spatially periodic artificial spin ices. Vertex-level degeneracy and frustration induced by the network topology of the Penrose pattern leads to a low energy configuration that we propose as a ground state. Topologically induced emergent frustration means that this ground state cannot be constructed from vertices in their ground states. It has two parts, a quasi-one-dimensional rigid "skeleton" that spans the entire pattern and is capable of long-range order, and "flippable" clusters of macrospins within it. These lead to macroscopic degeneracy for the array as a whole. Magnetic force microscopy imaging of Penrose tiling arrays revealed superdomains that are larger for more strongly coupled arrays. The superdomain size is larger after AC-demagnetisation and especially after annealing the array above its blocking temperature.

cond-mat.dis-nn↗

arXiv2017

Very low critical current density for motion of coupled domain walls in synthetic ferrimagnet nanowires

Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of energy-efficient devices has been hampered by the high current densities needed to initiate domain wall motion. We show here that a remarkable reduction in the critical current density can be achieved for in-plane magnetised coupled domain walls in CoFe/Ru/CoFe synthetic ferrimagnet tracks. The antiferromagnetic exchange coupling between the layers leads to simple Néel wall structures, imaged using photoemission electron and Lorentz transmission electron microscopy, with a width of only $\sim 100$~nm. The measured critical current density to set these walls in motion, detected using magnetotransport measurements, is $1.0 \times 10^{11}$~Am$^{-2}$, almost an order of magnitude lower than in a ferromagnetically coupled control sample. Theoretical modelling indicates that this is due to nonadiabatic driving of anisotropically coupled walls, a mechanism that can be used to design efficient domain-wall devices.

cond-mat.mes-hall↗

arXiv2015

Magnetic microscopy of topologically protected homochiral domain walls in an ultrathin perpendicularly magnetized Co film

Next-generation concepts for solid-state memory devices are based on current-driven domain wall propagation, where the wall velocity governs the device performance. It has been shown that the domain wall velocity and the direction of travel is controlled by the nature of the wall and its chirality. This chirality is attributed to effects emerging from the lack of inversion symmetry at the interface between a ferromagnet and a heavy metal, leading to an interfacial Dzyaloshinskii-Moriya interaction that can control the shape and chirality of the magnetic domain wall. Here we present direct imaging of domain walls in Pt/Co/AlO$_x$ films using Lorentz transmission electron microscopy, demonstrating the presence of homochiral, and thus topologically protected, Néel walls. Such domain walls are good candidates for dense data storage, bringing the bit size down close to the limit of the domain wall width.

cond-mat.mtrl-sci↗

arXiv2012

A Numerical Model of Crossed Andreev Reflection and Charge Imbalance

We present a numerical model of local and nonlocal transport properties in a lateral spin valve structure consisting of two magnetic electrodes in contact with a third perpendicular superconducting electrode. By considering the transport paths for a single electron incident at the local F/S interface - in terms of probabilities of crossed or local Andreev reflection, elastic cotunneling or quasiparticle transport - we show that this leads to nonlocal charge imbalance. We compare this model with experimental data from an aluminum-permalloy (Al/Py) lateral spin valve geometry device and demonstrate the effectiveness of this simple approach in replicating experimental behavior.

cond-mat.mes-hall↗

arXiv2012

Charge Imbalance and Crossed Andreev reflection in Py/Ta Devices

Crossed Andreev reflection in a lateral spin valve geometry device is an aspect of considerable recent interest, particularly with regards to Cooper pair splitting experiments to realize solid state quantum entanglement. In this work, devices are fabricated consisting of two ferromagnetic permalloy (Py) electrodes contacted by a overlaid perpendicular superconducting Ta electrode, of variable lateral in-plane offset within the expected BCS superconducting coherence length $ξ_0$. Experimental electrical transport measurements are presented of local and nonlocal conduction, showing characteristics of non-local or crossed Andreev reflection in the superconducting state at low temperatures in addition to nonlocal effects divergent for T$\rightarrow$T$_c$ attributed to nonlocal charge imbalance.

cond-mat.mes-hall↗

arXiv2006

Transformation of spin information into large electrical signals via carbon nanotubes

Spin electronics (spintronics) exploits the magnetic nature of the electron, and is commercially exploited in the spin valves of disc-drive read heads. There is currently widespread interest in using industrially relevant semiconductors in new types of spintronic devices based on the manipulation of spins injected into a semiconducting channel between a spin-polarized source and drain. However, the transformation of spin information into large electrical signals is limited by spin relaxation such that the magnetoresistive signals are below 1%. We overcome this long standing problem in spintronics by demonstrating large magnetoresistance effects of 61% at 5 K in devices where the non-magnetic channel is a multiwall carbon nanotube that spans a 1.5 micron gap between epitaxial electrodes of the highly spin polarized manganite La0.7Sr0.3MnO3. This improvement arises because the spin lifetime in nanotubes is long due the small spin-orbit coupling of carbon, because the high nanotube Fermi velocity permits the carrier dwell time to not significantly exceed this spin lifetime, because the manganite remains highly spin polarized up to the manganite-nanotube interface, and because the interfacial barrier is of an appropriate height. We support these latter statements regarding the interface using density functional theory calculations. The success of our experiments with such chemically and geometrically different materials should inspire adventure in materials selection for some future spintronics

cond-mat.mes-hall↗

arXiv2005

Electrical transport between epitaxial manganites and carbon nanotubes

The possibility of performing spintronics at the molecular level may be realized in devices that combine fully spin polarized oxides such as manganites with carbon nanotubes. However, it is not clear whether electrical transport between such different material systems is viable. Here we show that the room temperature conductance of manganite-nanotube-manganite devices is only half the value recorded in similar palladium-nanotube-palladium devices. Interestingly, the former shows a pseudogap in the conductivity below the relatively high temperature of 200 K. Our results suggest the possibility of new spintronics heterostructures that exploit fully spin polarized sources and drains.

cond-mat.mes-hall↗