arXiv subjects

Gavin J. Conibeer

Publications and source records attributed to Gavin J. Conibeer.

5 recordsLinked to original sources

arXiv2024

Dynamic Nanodomains Dictate Macroscopic Properties in Lead Halide Perovskites

Empirical A-site cation substitution has advanced the stability and efficiency of hybrid organic-inorganic lead halide perovskites solar cells and the functionality of X-ray detectors. Yet, the fundamental mechanisms underpinning their unique performance remain elusive. This multi-modal study unveils the link between nanoscale structural dynamics and macroscopic optoelectronic properties in these materials by utilising X-ray diffuse scattering, inelastic neutron spectroscopy and optical microscopy complemented by state-of-the-art machine learning-assisted molecular dynamics simulations. Our approach uncovers the presence of dynamic, lower-symmetry local nanodomains embedded within the higher-symmetry average phase in various perovskite compositions. The properties of these nanodomains are tunable via the A-site cation selection: methylammonium induces a high density of anisotropic, planar nanodomains of out-of-phase octahedral tilts, while formamidinium favours sparsely distributed isotropic, spherical nanodomains with in-phase tilting, even when crystallography reveals cubic symmetry on average. The observed variations in the properties of dynamic nanodomains are in agreement with our simulations and are directly linked to the differing macroscopic optoelectronic and ferroelastic behaviours of these compositions. By demonstrating the influence of A-site cation on local nanodomains and consequently, on macroscopic properties, we propose leveraging this relationship to engineer the optoelectronic response of these materials, propelling further advancements in perovskite-based photovoltaics, optoelectronics, and X-ray imaging.

cond-mat.mtrl-sci↗

arXiv2024

Long-Lived Coherent Acoustic Phonons in Epitaxially Grown III-V Adiabatic Cavities

We provide evidence of strongly confined coherent acoustic phonons inside high quality factor phononic cavities that exhibit tailoredphonon potentials. Using GaAs/AlAs quasiperiodic superlattices, these functional phonon potentials are realized by adiabatically changing the layer thicknesses along the growth direction. Room temperature ultrafast vibrational spectroscopy reveals discrete phonon levels in the range of $\approx 96-101$ GHz. Additionally, we confirm that phononic cavities significantly retard the energy loss rate of the photoexcited carriers as evidenced by time-resolved photoluminescence measurements. These results highlight the potential of opto-phononic devices that can bridge the divide between phononics and optoelectronics by concurrently engineering electronic and phononic properties.

physics.app-ph↗

arXiv2020

Optoelectronic Reciprocity in Hot Carrier Solar Cells with Ideal Energy Selective Contacts

Hot carrier solar cells promise theoretical power conversion efficiencies far beyond the single junction limit. However, practical implementations of hot carrier solar cells have lagged far behind those theoretical predictions. Reciprocity relations for electro-luminescence from conventional single junction solar cells have been extremely successful in driving their efficiency ever closer to the theoretical limits. In this work, we discuss how the signatures of a functioning hot carrier device should manifest experimentally in electro-luminescence and dark $I-V$ characteristics. Hot carrier properties lead to deviations from the Shockley diode equation that is typical for conventional single junction solar cells. These deviations are directly linked to an increase in temperature of the carriers and therefore the temperature measured from electro-luminescence spectra. We also elucidate how the behaviour of hot carrier solar cells in the dark depends on whether Auger processes play a significant role, revealing a stark contrast between the regime of negligible Auger recombination (carrier conservation model) and dominant Auger recombination (Impact Ionization model) for hot carrier solar cells.

physics.app-ph↗

arXiv2017

Single-mode Near-infrared Lasing in a GaAsSb/GaAs Nanowire Superlattice at Room Temperature

Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode room-temperature lasing from 890 nm to 990 nm utilizing a novel design of single nanowires with GaAsSb-based multiple superlattices as gain medium under optical pumping. The wavelength tunability with comprehensively enhanced lasing performance is shown to result from the unique nanowire structure with efficient gain materials, which delivers a lasing quality factor as high as 1250, a reduced lasing threshold ~ 6 kW cm-2 and a high characteristic temperature ~ 129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way towards future nanoscale integrated optoelectronic systems with stunning performance.

cond-mat.mes-hall↗

arXiv2012

Theoretical and experimental evaluation of multilayer porous silicon structures for enhanced erbium up-conversion luminescence

The enhancement of Er$^{3+}$-based up-conversion for photovoltaics in multilayer porous silicon photonic structures is considered theoretically and experimentally. Transfer matrix simulations are used to assess the increased photonic density of states that results from the slowing of energy propagation at the short-wavelength edge of one-dimensional photonic band gaps. An indirect calculation of Er$^{3+}$ absorption enhancement within slow-light modes is then used to illustrate an increase in absorption over the bulk value: the effective absorption coefficient is shown to increase by more than 22% over a broad spectral region and by more than 400% over a narrow region. Erbium-doped porous silicon photonic crystals are fabricated with the photonic band edge coincident with the $^{4}I_{15/2} \rightarrow^{4}I_{13/2}$ Er$^{3+}$ transition. Challenges in fabrication and the results of compositional analysis are discussed. An angular-dependent photoluminescence measurement demonstrates emission intensity that varies non-monotonically with the position of the photonic band edge. A maximum of 26.6$\times$ enhancement of Er$^{3+}$ emission intensity is observed for the 550-nm transition, with lower enhancement factors seen for longer wavelengths.

physics.optics↗