arXiv subjects

Gayatri

Publications and source records attributed to Gayatri.

5 recordsLinked to original sources

arXiv2026

Geometry-Controlled Magnetic and Electronic Landscapes in Anisotropic van der Waals Materials

Electronic structure in van der Waals materials is commonly engineered through composition, strain, electrostatic gating and heterostructure assembly. Here we introduce geometronics, a concept in which substrate geometry locally reorients an anisotropic crystal, transforming homogeneous external perturbation into programmable magnetic and electronic landscapes. We demonstrate this concept using a bilayer of the antiferromagnetic semiconductor CrSBr transferred onto an inverted pyramidal nanoindentation, where the local crystal orientation with respect to the external magnetic field drives the coexistence of antiferromagnetic and ferromagnetic phases within a single continuous crystal. The resulting magnetic landscape creates a switchable excitonic potential well of up to 10--12 meV, directly visualised by spatially resolved spectroscopy. More generally, geometronics provides a universal route for deterministically programmed electronic and magnetic landscapes without modifying the material itself. It therefore establishes substrate topography as a new design principle that exploits the intrinsic anisotropy of layered van der Waals materials.

cond-mat.mtrl-sci↗

arXiv2026

Chiral Phonons and Giant Anisotropic Photoresponse in Quasi-1D van der Waals Semiconductor ZrSnS3

Low-dimensional van der Waals semiconductors with reduced symmetry provide a unique platform for exploring anisotropic physical properties. The quasi-one-dimensional family MXQ$_3$ (M = Hf, Zr; X = Sn; Q = S, Se) exhibits notable structural anisotropy, where zigzag atomic chains influence optical phenomena such as birefringence. This study investigates anisotropic lattice dynamics in ZrSnS$_3$ using angle- and polarization-dependent Raman spectroscopy. Temperature-dependent measurements reveal anharmonic phonon behavior, indicating strong phonon-phonon coupling. Density functional theory calculations show good agreement with the experimentally observed Raman spectra, validating the microscopic description of the lattice dynamics. We also observe a helicity-dependent intensity and a reversal in phonon intensity between lower- and higher-frequency modes under circularly polarized light, which is characteristic of chiral phonons governed by the polarization of the Zr/Sn chains. Our first-principles analysis further shows that angular-momentum-like phonon textures can emerge away from the $\Gamma$-point near mode-hybridization and avoided-crossing regions, providing microscopic insight into the observed helicity-dependent Raman signatures. Furthermore, we fabricate an optoelectronic device from a thin ZrSnS$_3$ nanowire, demonstrating a photoresponsivity of 50~mA/W under 520~nm laser excitation (1~mW/cm$^2$). The device exhibits a pronounced, power-scalable anisotropic photoresponse with a clear preferred polarization direction. These results highlight the coupling mechanisms between polarization, lattice vibrations, and charge carriers in ZrSnS$_3$, establishing it as a promising material for polarization-sensitive optoelectronics and directional quantum transport.

cond-mat.mtrl-sci↗

arXiv2025

Magneto-Excitonic Duality From Monolayer to Trilayer CrSBr

Two-dimensional (2D) layered magnetic materials (LMMs) are a newly emerging class of van der Waals materials, opening new opportunities to study magneto-excitonic coupling. The air-stable, structurally and optically anisotropic A-type antiferromagnetic chromium sulfur bromide (CrSBr) is one of the most prominent examples of such LMMs. We investigate photoluminescence (PL) and PL excitation of mono- to tri-layers CrSBr and find that it exhibits a unique duplexity, supporting both Frenkel- and Wannier-Mott-like excitons. Our magneto-optical experiments reveal a similar excitonic response from the mono- and trilayer systems and a completely different signature in the bilayer flake. This shows a different origin of the low-lying excitonic species (A, A', and B) in the band structure. We confirm the robustness of the magneto-excitonic coupling in few-layer CrSBr. Our work enables a more comprehensive exploration of the dual excitonic behavior in 2D materials.

cond-mat.mtrl-sci↗

arXiv2025

Fast Interlayer Energy Transfer from the Lower Bandgap MoS2 to the Higher Bandgap WS2

Energy transfer (ET) is a dipole-dipole interaction, mediated by the virtual photon. Traditionally, ET happens from the higher (donor) to lower bandgap (acceptor) material. However, in some rare instances, ET can happen from the lower-to-higher bandgap material, depending on the strong overlap between the acceptor photoluminescence (PL) and the donor absorption spectra. In this work, we report an ET process from the lower bandgap MoS2 to the higher bandgap WS2, due to a near 'resonant' overlap between the MoS2 B and WS2 A excitonic levels. Changing the MoS2 bandgap from direct-to-indirect by increasing the layer number results in a reduced ET rate, evidenced by the quenching of the WS2 PL emission. Our work shows at 300 K, the ET timescale of ~33 fs is faster than the reported thermalization of the MoS2 excitonic intervalley scattering (K to K') time and competing with the ultrafast charge transfer timescale. Thus, allowing us to open a new direction in understanding the competing inter/intralayer processes.

cond-mat.mtrl-sci↗

arXiv2024

Twisted MoSe2 Homobilayer Behaving as a Heterobilayer

Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a twisted molybdenum diselenide (MoSe2) homobilayer without any charge-blocking interlayer. We fabricated an unconventional homobilayer (i.e., HS) with a large twist angle by combining the chemical vapor deposition (CVD) and mechanical exfoliation (Exf.) techniques to fully exploit the lattice parameters mismatch and indirect/direct (CVD/Exf.) bandgap nature. This effectively weaken the charge transfer (CT) process and allows the ET process to take over the carrier recombination channels. We utilize a series of optical and electron spectroscopy techniques complementing by the density functional theory calculations, to describe a massive photoluminescence enhancement from the HS area due to an efficient ET process. Our results show that the electronically decoupled MoSe2 homobilayer is coupled by the ET process, mimicking a 'true' heterobilayer nature.

cond-mat.mes-hall↗