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Gayatri Sahu

Publications and source records attributed to Gayatri Sahu.

6 recordsLinked to original sources
arXiv2019

Non-Extensive Statistics in Free-Electron Metals and Thermal Effective Mass

We have applied the non-extensive statistical mechanics to free electrons in several metals to calculate the electronic specific heat at low temperature. In this case, the Fermi-Dirac (FD) function is modified from its Boltzmann-Gibbs (BG) form, with the exponential part going to a $q$-exponential, in its non-extensive form. In most cases, the non-extensive parameter, $q$, is found to be greater than unity to produce the correct thermal effective mass, $m^*$, of electrons. The ratio $m^*/m$ is found to show a nice systematic dependence on $q$. Results indicate, electrons in metals, in the presence of long range correlations are reasonably well described by Tsallis statistics.

cond-mat.stat-mech↗
arXiv2014

Effect of silicon resistivity on its porosification using metal induced chemical etching

A comparison of porous structures formed from silicon (Si) wafers with different resistivities has been reported here based on the morphological studies carried out using scanning electron microscope (SEM). The porous Si samples have been prepared using metal induced etching (MIE) technique from two different Si wafers having two different resistivities. It is observed that porous Si containing well aligned Si nanowires are formed from high resistivity (1-20 $Ω$cm) Si wafer whereas interconnected pores or cheese like structures are formed from low resistivity (0.02 $Ω$cm ) Si wafers after MIE. An explanation for the different porosification processes has also been proposed based on the initial doping level where number of dopants seems to be playing an important role on the etching process. Visible photoluminescence have been observed from all the porous samples possibly due to quantum confinement effect.

cond-mat.mes-hall↗
arXiv2014

Comparison of porous silicon prepared using metal-induced etching (MIE) and laser-induced etching (LIE)

Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using SEM. A uniformly distributed smaller (submicron sized) pores are formed when MIE technique is used because the pore formation is driven by uniformly distributed metal (silver in present case) nanoparticles, deposited prior to the porosification step. Whereas in p-Si, prepared by LIE technique, wider pores with some variation in pore size as compared to MIE technique is observed because a laser having gaussian profile of intensity is used for porosification. Uniformly distribute well-aligned Si nanowires are observed in samples prepared by MIE method as seen using cross-sectional SEM imaging. A single photoluminescence (PL) peak at 1.96 eV corresponding to red emission at room temperature is observed which reveals that the Si nanowires, present in p-Si prepared by MIE, show quantum confinement effect. The single PL peak confirms the presence of uniform sized nanowires in MIE samples. These vertically aligned Si nanowires can be used for field emission application.

cond-mat.mes-hall↗
arXiv2013

Evolution of Asymmetric Raman line-shape from nano-structures

A step-by-step evolution of an asymmetric Raman line-shape function from a Lorentzian line-shape is presented here for low dimensional semiconductors. The evolution reported here is based on the phonon confinement model which is successfully used in literature to explain the asymmetric Raman line-shape from semiconductor nano-structures. Physical significance of different terms in the theoretical asymmetric Raman line-shape has been explained here. Better understanding of theoretical reasoning behind each term allows one to use the theoretical Raman line-shape without going into details of theory from first principle. This will enable one to empirically derive a theoretical Raman line-shape function for any material if information about its phonon dispersion, size dependence etc is known.

cond-mat.mes-hall↗
arXiv2013

Fabrication of silicon nanocrystals using sequential Au ion implantation

Silicon nanocrystals are produced using a two-stage gold ion implantation technique. First stage implantation using low energy ions leads to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the second stage is found to produce strained Si NCs. An annealing at a temperature as low as 500$^o$C is seen to result in strain free NCs showing quantum confinement effects. Higher temperature annealing of the samples is found to result in growth in size from recrystallization of the a-Si matrix. Raman Scattering, X-ray diffraction (XRD) and Rutherford Backscattering spectrometry (RBS) have been used to study the effect of annealing on the samples and the size of Si NCs formed. The data could be well explained using a phonon confinement model with an extremely narrow size distribution. XRD results go in line with Raman analysis.

cond-mat.mes-hall↗