arXiv subjects

Gebhard J. Matt

Publications and source records attributed to Gebhard J. Matt.

4 recordsLinked to original sources

arXiv2024

On characterizing X-ray detectors for low-dose imaging

The last decade has seen a renewed exploration of semiconductor materials for X-ray detection, foremost focusing on lead-based perovskites and other metal halides as direct-conversion materials and scintillators. However, the reported performance characteristics are often incomplete or misleading in assessing the practical utility of materials. This Perspective offers guidelines for choosing, estimating and presenting the relevant figures of merit. We also provide ready-to-used tools for calculating these figures of merit: MATLAB application, Mathcad worksheet and a website. The X-ray detectors for medical imaging are at focus for their increasing societal value and since they bring about the most stringent requirements as the image shall be acquired at as low as reasonably attainable (i.e. ALARA principle) dose received by the patient.

physics.ins-det↗

arXiv2019

Light Intensity Modulated Impedance Spectroscopy (LIMIS) in All-Solid-State Solar Cells at Open Circuit

Potentiostatic impedance spectroscopy (IS) is a well stablished characterization technique for elucidating the electric resistivity and capacitive features of materials and devices. In the case of solar cells, by applying a small voltage perturbation the current signal is recorded and the recombination processes and defect distributions are among the typical outcomes in IS studies. In this work a photo-impedance approach, named light intensity modulated impedance spectroscopy (LIMIS), is first tested in all-solid-state photovoltaic cells by recording the individual photocurrent (IMPS) and photovoltage (IMVS) responsivity signals due to a small light perturbation at open-circuit (OC), and combining them: LIMIS=IMVS/IMPS. The experimental LIMIS spectra from silicon, organic, and perovskite solar cells are presented and compared with IS. An analysis of the equivalent circuit numerical models for total resistive and capacitive features is discussed. Our theoretical findings show a correction to the lifetimes evaluations by obtaining the total differential resistances and capacitances combining IS and LIMIS measurements. This correction addresses the discrepancies among different techniques, as shown with transient photovoltage. The experimental differences between IS and LIMIS (i) proves the unviability of the superposition principle, (ii) suggest a bias-dependent photo-current correction to the empirical Shockley equation of the steady-state current at different illumination intensities around OC and (iii) are proposed as a potential figure of merit for characterizing performance and stability of solar cells. In addition, new features are reported for the low-frequency capacitance of perovskite solar cells, measured by IS and LIMIS.

physics.app-ph↗

arXiv2019

Analytical Model for Light Modulating Impedance Spectroscopy (LIMIS) in All-Solid-State p-n Junction Solar Cells at Open-Circuit

Non-circuit theory drift-diffusion numerical simulation of standard potentiostatic impedance spectroscopy (IS) is a well-known strategy for characterization of materials and electronic devices. It implies the time-dependent solutions from the continuity and Poisson's equations under small perturbation of the bias boundary condition at the electrodes. But in the case of photo-sensitive devices a small light perturbation can be also taken modulating the generation rate along the absorber bulk. In that focus, this work approaches a set of analytical solutions for the signals of IS and intensity modulated photocurrent and photovoltage spectroscopies, IMPS and IMVS respectively, from one-sided p-n junction solar cells at open-circuit. Subsequently, a photo-impedance signal named light intensity modulated impedance spectroscopy (LIMIS equals IMVS over IMPS) is analytically simulated and its difference with respect to IS suggests a correlation with the surface charge carrier recombination velocity. This is an illustrative result and starting point for future more realistic numerical simulations.

cond-mat.mtrl-sci↗

arXiv2017

Spin-split bands cause the indirect band gap of (CH$_3$NH$_3$)PbI$_3$: Experimental evidence from circular photogalvanic effect

Long carrier lifetimes and diffusion lengths form the basis for the successful application of the organic-inorganic perovskite (CH$_3$NH$_3$)PbI$_3$ in solar cells and lasers. The mechanism behind the long carrier lifetimes is still not completely understood. Spin-split bands and a resulting indirect band gap have been proposed by theory. Using near band-gap left-handed and right-handed circularly polarized light we induce photocurrents of opposite directions in a single-crystal (CH$_3$NH$_3$)PbI$_3$ device at low temperature ($4~\mathrm{K}$). The phenomenom is known as the circular photogalvanic effect and gives direct evidence for phototransport in spin-split bands. Simultaneous photoluminecence measurements show that the onset of the photocurrent is below the optical band gap. The results prove that an indirect band gap exists in (CH$_3$NH$_3$)PbI$_3$ with broken inversion symmetry as a result of spin-splittings in the band structure. This information is essential for understanding the photophysical properties of organic-inorganic perovskites and finding lead-free alternatives. Furthermore, the optically driven spin currents in (CH$_3$NH$_3$)PbI$_3$ make it a candidate material for spintronics applications.

cond-mat.mtrl-sci↗