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Gen Tatara

Publications and source records attributed to Gen Tatara.

89 records · Page 5Linked to original sources

On Aharonov-Bohm oscillation in a ferromagnetic ring

Aharonov-Bohm effect in a ferromagnetic thin ring in diffusive regime is theoretically studied by calculating the Cooperon and Diffuson. In addition to the spin-orbit interaction, we include the spin-wave excitation and the spin splitting, which are expected to be dominant sources of dephasing in ferromagnets at low temperatures. The spin splitting turns out to kill the spin-flip channel of Cooperon but leaves the spin-conserving channel untouched. For the experimental confirmation of interference effect (described by Cooperons) such as weak localization and Aharonov-Bohm oscillation with period $h/2e$, we need to suppress the dominant dephasing by orbital motion. To do this we propose experiments on a thin film or thin ring with magnetization and external field perpendicular to the film, in which case the effective field inside the sample is equal to the external field (magnetization does not add up). The field is first applied strong enough to saturate the magnetization and then carrying out the measurement down to zero field keeping the magnetization nearly saturated, in order to avoid domain formations (negative fields may also be investigated if the coercive field is large enough).

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Quantum toys for quantum computing: persistent currents controled by spin chirality

Quantum devices and computers will need operational units in different architectural configurations for their functioning. The unit should be a simple ``quantum toy'', easy to handle superposition states. Here a novel such unit of quantum mechanical flux state (or persistent current) in a conducting ring with three ferromagnetic quantum dots is presented. The state is labeled by the two direction of the persistent current, which is driven by the spin chirality of the dots, and is controled by the spin. It is demosntrated that by use of two rings connected, one can carry out unitary transformations on the input flux state by controling one spin in one of the rings, unabling us to prepare superposition states. The flux is shown to be a quantum XOR operation gate, and may be useful in quantum computing.

cond-mat.mes-hall↗

Permanent current from non-commutative spin algebra

We show that a spontaneous electric current is induced in a nano-scale conducting ring just by putting three ferromagnets. The current is a direct consequence of the non-commutativity of the spin algebra, and is proportional to the non-coplanarity (chirality) of the magnetization vectors. The spontaneous current gives a natural explanation to the chirality-driven anomalous Hall effect.

cond-mat.mes-hall↗

Chirality driven anomalous Hall effect in weak coupling regime

Anomalous Hall effect arising from non-trivial spin configuration (chirality) is studied based on the $s$-$d$ model. Considering a weak coupling case, the interaction is treated perturbatively. Scattering by normal impurities is included. Chirality is shown to drive locally Hall current and leads to overall Hall effect if there is a finite uniform chirality. This contribution is independent of the conventional spin-orbit contribution and shows distinct low temperature behavior. In mesoscopic spin glasses, chirality-induced anomalous Hall effect is expected below the spin-glass transition temperature. Measurement of Hall coefficient would be useful in experimentally confirming the chirality ordering.

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Transient electric current through an Aharonov-Bohm ring after switching of a Two-Level-System

Response of the electronic current through an Aharonov-Bohm ring after a two-level-system is switched on is calculated perturbatively by use of non-equilibrium Green function. In the ballistic case the amplitude of the Aharonov-Bohm oscillation is shown to decay to a new equilibrium value due to scattering into other electronic states. Relaxation of Altshuler-Aronov-Spivak oscillation in diffusive case due to dephasing effect is also calculated. The time scale of the relaxation is determined by characteristic relaxation times of the system and the splitting of two-level-system. Oscillation phases are not affected. Future experimental studies of current response may give us direct information on characteristic times of mesoscopic systems.

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Electronic pressure on ferromagnetic domain wall

The scattering of the eletron by a domain wall in a nano-wire is studied perturbatively to the lowest order. The correction to the thermodaynamic potential of the electron system due to the scattering is calculated from the phase shift. The wall profile is determined by taking account of this correction, and the result indicates that the wall in a ferromagnet with small exchange coupling can be squeezed to be very thin to lower the electron energy.

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Domain Wall Resistance based on Landauer's Formula

The scattering of the electron by a domain wall in a nano-wire is calculated perturbatively to the lowest order. The resistance is calculated by use of Landauer's formula. The result is shown to agree with the result of the linear response theory if the equilibrium is assumed in the four-terminal case.

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Ballistic and diffuse transport through a ferromagnetic domain wall

We study transport through ballistic and diffuse ferromagnetic domain walls in a two-band Stoner model with a rotating magnetization direction. For a ballistic domain wall, the change in the conductance due to the domain wall scattering is obtained from an adiabatic approximation valid when the length of the domain wall is much longer than the Fermi wavelength. In diffuse systems, the change in the resistivity is calculated using a diagrammatic technique to the lowest order in the domain wall scattering and taking into account spin-dependent scattering lifetimes and screening of the domain wall potential.

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Effects of Domain Wall on Electronic Transport Properties in Mesoscopic Wire of Metallic Ferromagnets

We study the effect of the domain wall on electronic transport properties in wire of ferromagnetic 3$d$ transition metals based on the linear response theory. We considered the exchange interaction between the conduction electron and the magnetization, taking into account the scattering by impurities as well. The effective electron-wall interaction is derived by use of a local gauge transformation in the spin space. This interaction is treated perturbatively to the second order. The conductivity contribution within the classical (Boltzmann) transport theory turns out to be negligiblly small in bulk magnets, due to a large thickness of the wall compared with the fermi wavelength. It can be, however, significant in ballistic nanocontacts, as indicated in recent experiments. We also discuss the quantum correction in disordered case where the quantum coherence among electrons becomes important. In such case of weak localization the wall can contribute to a decrease of resistivity by causing dephasing. At lower temperature this effect grows and can win over the classical contribution, in particular in wire of diameter $L_{\perp}\lesssim \ell_ϕ$, $\ell_ϕ$ being the inelastic diffusion length. Conductance change of the quantum origin caused by the motion of the wall is also discussed.

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Quantum Transport in Disorderd Mesoscopic Ferromagnetic Films

The effect of impurity and domain-wall scattering on the electrical conductivity of disordered mesoscopic magnetic thin films is studied by use of computer simulation. The results indicate a reduction of resistivity due to a domain wall, which is consistent with the explanation in terms of the dephasing caused by domain wall.

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Dephasing Effects by Ferromagnetic Boundary on Resistivity in Disordered Metallic Layer

The resistivity of disordered metallic layer sandwiched by two ferromagnetic layers at low-temperature is investigated theoretically. It is shown that the magnetic field acting at the interface does not affect the classical Boltzmann resistivity but causes a dephasing among electrons in the presence of the spin-orbit interaction, suppressing the anti-localization due to the spin-orbit interaction. The dephasing turns out to be stronger in the case where the magnetization of the two layers is parallel, contributing to a positive magnetoresistance close to a switching field at low temperature.

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Dissipation Enhanced Asymmetric Transport in Quantum Ratchets

Quantum mechanical motion of a particle in a periodic asymmetric potential is studied theoretically at zero temperature. It is shown based on semi-classical approximation that the tunneling probability from one local minimum to the next becomes asymmetric in the presence of weak oscillating field, even though there is no macroscopic field gradient in average. Dissipation enhances this asymmetry, and leads to a steady unidirectional current, resulting in a quantum ratchet system.

cond-mat.stat-mech↗

Quantum Ratchets

The concept of thermal ratchets is extended to the system governed by quantum mechanics. We study a tight-binding model with an asymmetric periodic potential contacting with a heat bath under an external oscillating field as a specific example of quantum ratchet. Dynamics of a density operator of this system is studied numerically by using the quantum Liouville equation. Finite net current is found in the non-equilibrium steady state. The direction of the current varies with parameters, in contrast with the classical thermal ratchets.

cond-mat.stat-mech↗

Resistivity due to a Domain Wall in Ferromagnetic Metal

The resistivity due to a domain wall in ferromagnetic metallic wire is calculated based on the linear response theory. The interaction between conduction electrons and the wall is expressed in terms of a classical gauge field which is introduced by the local gauge transformation in the electron spin space. It is shown that the wall contributes to the decoherence of electrons and that this quantum correction can dominate over the Boltzmann resisitivity, leading to a decrease of resisitivity by nucleation of a wall. The conductance fluctuation due to the motion of the wall is also investigated. The results are compared with recent experiments.

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Macroscopic Quantum Tunneling and Dissipation of Domain Wall in Ferromagnetic Metals

The depinning of a domain wall in ferromagentic metal via macroscopic quantum tunneling is studied based on the Hubbard model. The dynamics of the magnetization verctor is shown to be governed by an effective action of Heisenberg model with a term non-local in time that describes the dissipation due to the conduction electron. Due to the existence of the Fermi surface there exists Ohmic dissipation even at zero temperature, which is crucially different from the case of the insulator. Taking into account the effect of pinning and the external magnetic field the action is rewritten in terms of a collective coordinate, the position of the wall, $Q$. The tunneling rate for $Q$ is calculated by use of the instanton method. It is found that the reduction of the tunneling rate due to the dissipation is very large for a thin domain wall with thickness of a few times the lattice spacing, but is negligible for a thick domain wall. Dissipation due to eddy current is shown to be negligible for a wall of mesoscopic size.

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Macroscopic Quantum Tunneling of a Domain Wall in a Ferromagnetic Metal

The macroscopic quantum tunneling of a planar domain wall in a ferromagnetic metal is studied by use of an instanton method. Based on the Hubbard model, the effective action of the magnetization is derived within the assumption of slow dependences on space and time. The resulting action is formally similar to that of a ferromagnetic Heisenberg model but with a term non-local in time that describes the dissipation due to the itinerant electron. The crucial difference from the case of the insulator is the presence of the ohmic dissipation even at zero temperature due to the gapless Stoner excitation. The reduction of the tunneling rate due to the dissipation is calculated. The dissipative effect is found to be very large for a thin domain wall with thickness of a few times the lattice spacing, but is negligible for a thick domain wall. The results are discussed in the light of recent experiments on ferromagnets with strong anisotropy. (Submitted to J. Phys. Soc. Jpn)

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Macroscopic Quantum Tunneling of a Domain Wall in a Ferromagnetic Metal

The macroscopic quantum tunneling of a planar domain wall in a ferromagnetic metal is studied based on the Hubbard model. It is found that the ohmic dissipation is present even at zero temperature due to the gapless Stoner excitation, which is the crucial difference from the case of the insulating magnet. The dissipative effect is calculated as a function of width of the wall and is shown to be effective in a thin wall and in a weak ferromagnet. The results are discussed in the light of recent experiments on ferromagnets with strong anisotropy. PACS numbers:75.60.Ch, 03.65.Sq, 75.10.Lp

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