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Gen Yin

Publications and source records attributed to Gen Yin.

29 records · Page 2Linked to original sources
arXiv2020

3D Nanomagnetism in Low Density Interconnected Nanowire Networks

Free-standing, interconnected metallic nanowire networks with density as low as 40 mg/cm^{3} have been achieved over cm-scale areas, using electrodeposition into polycarbonate membranes that have been ion-tracked at multiple angles. Networks of interconnected magnetic nanowires further provide an exciting platform to explore 3-dimensional nanomagnetism, where their structure, topology and frustration may be used as additional degrees of freedom to tailor the materials properties. New magnetization reversal mechanisms in cobalt networks are captured by the first-order reversal curve method, which demonstrate the evolution from strong demagnetizing dipolar interactions to intersections-mediated domain wall pinning and propagation, and eventually to shape-anisotropy dominated magnetization reversal. These findings open up new possibilities for 3-dimensional integrated magnetic devices for memory, complex computation, and neuromorphics.

cond-mat.mtrl-sci↗
arXiv2020

Néel-type skyrmion in WTe2/Fe3GeTe2 van der Waals heterostructure

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, layered structures provide a new platform for the discovery of new physics and effects. Recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials offer new opportunities. Here we demonstrate the Dzyaloshinskii-Moriya interaction and Néel-type skyrmions are induced at the WTe2/Fe3GeTe2 interface. Fe3GeTe2 is a ferromagnetic material with strong perpendicular magnetic anisotropy. We demonstrate that the strong spin orbit interaction in 1T'-WTe2 does induce a large interfacial Dzyaloshinskii-Moriya interaction at the interface with Fe3GeTe2 due to the inversion symmetry breaking to stabilize skyrmions. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmions along with aligned and stripe-like domain structure. This interfacial coupling induced Dzyaloshinskii-Moriya interaction is estimated to have a large energy of 1.0 mJ/m^2, which can stabilize the Néel-type skyrmions in this heterostructure. This work paves a path towards the skyrmionic devices based on van der Waals heterostructures.

cond-mat.mtrl-sci↗
arXiv2019

Topological Spin Hall Effect due to Magnetic Skyrmions

The intrinsic spin Hall effect (SHE) originates from the topology of the Bloch bands in momentum space. The duality between real space and momentum space calls for a spin Hall effect induced from a real space topology in analogy to the topological Hall effect (THE) of skyrmions. We theoretically demonstrate the topological spin Hall effect (TSHE) in which a pure transverse spin current is generated from a skyrmion spin texture.

cond-mat.mes-hall↗
arXiv2019

Planar Hall effect in antiferromagnetic MnTe thin films

We show that the spin-orbit coupling (SOC) in alpha-MnTe impacts the transport behavior by generating an anisotropic valence-band splitting, resulting in four spin-polarized pockets near Gamma. A minimal k-dot-p model is constructed to capture this splitting by group theory analysis, a tight-binding model and ab initio calculations. The model is shown to describe the rotation symmetry of the zero-field planer Hall effect (PHE). The upper limit of the PHE percentage is shown to be fundamentally determined by the band shape, and is quantitatively estimated to be roughly 31% by first principles.

cond-mat.mtrl-sci↗
arXiv2018

Charged impurity scattering in two-dimensional materials with ring-shaped valence bands: GaS, GaSe, InS, and InSe

The singular density of states and the two Fermi wavevectors resulting from a ring-shaped or "Mexican hat" valence band give rise to unique trends in the charged impurity scattering rates and charged impurity limited mobilities. Ring shaped valence bands are common features of many monolayer and few-layer two-dimensional materials including the III-VI materials GaS, GaSe, InS, and InSe. The wavevector dependence of the screening, calculated within the random phase approximation, is so strong that it is the dominant factor determining the overall trends of the scattering rates and mobilities with respect to temperature and hole density. Charged impurities placed on the substrate and in the 2D channel are considered. The different wavevector dependencies of the bare Coulomb potentials alter the temperature dependence of the mobilities. Moving the charged impurities 5 $Å$ from the center of the channel to the substrate increases the mobility by an order of magnitude.

cond-mat.mes-hall↗
arXiv2018

Gate controlled Majorana Zero Modes on 2D heterostructures

Half-integer conductance, the signature of Majorana edge modes, has been recently observed in a quantum anomalous Hall insulator/superconductor heterostructure. Here, we analyze a scheme for gate-tunable control of degenerate ground states of Majorana zero modes (MZM) in thin film topological superconductors. Gating the top surface of a thin film magnetic topological insulator controls the topological phase in the region underneath the gate. The voltage of the transition depends on the gate width, and narrower gates require larger voltages. Relatively long gates are required, on the order of a micron, to prevent hybridization of the end modes and to allow the creation of MZMs at low gate voltages. Applying a voltage to T{shaped and I{shaped gates localizes the Majoranas at their ends. This scheme may provide a facile method for implementing quantum gates for topological quantum computing.

cond-mat.mes-hall↗
arXiv2016

Topological transitions induced by antiferromagnetism in a thin-film topological insulator

Ferromagnetism in topological insulators (TIs) opens a topologically non-trivial exchange band gap, providing an exciting platform to manipulate the topological order through an external magnetic field. Here, we experimentally show that the surface of an antiferromagnetic thin film can independently control the topological order of the top and the bottom surface states of a TI thin film through proximity couplings. During the magnetization reversal in a field scan, two intermediate spin configurations stem from unsynchronized magnetic switchings of the top and the bottom AFM/TI interfaces. These magnetic configurations are shown to result in new topological phases with non-zero Chern numbers for each surface, introducing two counter-propagating chiral edge modes inside the exchange gap. This change in the number of transport channels, as the result of the topological transitions, induces antisymmetric magneto-resistance spikes during the magnetization reversal. With the high Neel ordering temperature provided by the antiferromagnetic layers, the signature of the induced topological transition persists in transport measurements up to a temperature of around 90 K, a factor of three over the Curie temperature in a typical magnetically doped TI thin film.

cond-mat.mes-hall↗
arXiv2016

Chiral Majorana edge state in a quantum anomalous Hall insulator-superconductor structure

After the recognition of the possibility to implement Majorana fermions using the building blocks of solid-state matters, the detection of this peculiar particle has been an intense focus of research. Here we experimentally demonstrate a collection of Majorana fermions living in a one-dimensional transport channel at the boundary of a superconducting quantum anomalous Hall insulator thin film. A series of topological phase changes are controlled by the reversal of the magnetization, where a half-integer quantized conductance plateau (0.5e2/h) is observed as a clear signature of the Majorana phase. This transport signature can be well repeated during many magnetic reversal sweeps, and can be tracked at different temperatures, providing a promising evidence of the chiral Majorana edge modes in the system.

cond-mat.supr-con↗
arXiv2016

Spin Josephson effects in Exchange coupled Anti-ferromagnets

The energy of exchange coupled antiferromagnetic insulators (AFMIs) is a periodic function of the relative in-plane orientation of the Néel vector fields. We show that this leads to oscillations in the relative magnetization of exchange coupled AFMIs separated by a thin metallic barrier. These oscillations pump a spin current ($I_{S}$) through the metallic spacer that is proportional to the rate of change of the relative in-plane orientation of the Néel vector fields. By considering spin-transfer torque induced by a spin chemical potential ($V_{S}$) at one of the interfaces, we predict non-Ohmic $I_{S}$-$V_{S}$ characteristics of AFMI exchange coupled hetero-structures, which leads to a non-local voltage across a spin-orbit coupled metallic spacer.

cond-mat.mes-hall↗
arXiv2016

Topological Charge Analysis of Ultrafast Single Skyrmion Creation

Magnetic skyrmions are topologically non-trivial spin textures of potential interest for future information storage applications, and for such purposes, the control and understanding of single skyrmion creation is required. A scheme is analyzed to create single Néel-type and Bloch-type skyrmions in helimagnetic thin films utilizing the dynamical excitations induced by the Oersted field and the spin transfer torque given by a vertically injected spin-polarized current. A topological charge analysis using a lattice version of the topological charge provides insight into the locally triggered transition from a trivial to a non-trivial topological spin texture of the Néel or Bloch type skyrmion. The topological protection of the magnetic skyrmion is determined by the symmetric Heisenberg exchange energy. The critical switching current density is $\sim10^{7}\thinspace\textrm{A/cm}^{2}$, which decreases with the easy-plane type uniaxial anisotropy and thermal fluctuations. In-plane spin polarization of the injected current performs better than out-of-plane polarization, and it provides ultrafast switching times (within 100 ps) and reliable switching outcomes.

cond-mat.mes-hall↗