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Gengchiau Liang

Publications and source records attributed to Gengchiau Liang.

At least 19 recordsLinked to original sources

Solving Boolean Satisfiability Problems Using A Hypergraph-based Probabilistic Computer

Boolean Satisfiability (SAT) problems are critical in fields such as artificial intelligence and cryptography, where efficient solutions are essential. Conventional probabilistic solvers often encounter scalability issues due to complex logic synthesis steps. In this work, we present a novel approach for solving the 3-SAT Boolean satisfiability problem using hypergraph-based probabilistic computers obtained through direct mapping. This method directly translates 3-SAT logical expressions into hypergraph structures, thereby circumventing conventional logic decomposition and synthesis procedures, and offering a more streamlined solver architecture. For representative uf100-430 instances, the proposed approach reduces the node count from 631 to 100 and the edge count from ~2,423 to ~1,013. Under identical simulated annealing conditions, the conventional simple undirected graph (SUG)-based solver achieves a 0% success rate across the tested instances, whereas the hypergraph-based solver attains an average success rate of ~77.6%. In addition, the hypergraph-based method reaches an average minimum energy of ~0.24, close to the theoretical ground state, while the SUG-based architecture remains trapped at substantially higher energy levels (~9.12 on average). The direct hypergraph mapping can further be extended to k-SAT formulations, providing a scalable framework for more complex satisfiability problems in probabilistic computing.

physics.comp-ph

Accelerated Discovery of Topological Conductors for Nanoscale Interconnects

The sharp increase in resistivity of copper interconnects at ultra-scaled dimensions threatens the continued miniaturization of integrated circuits. Topological semimetals (TSMs) with gapless surface states (Fermi arcs) provide conduction channels resistant to localization. Here we develop an efficient computational framework to quantify 0K surface-state transmission in nanowires derived from Wannier tight-binding models of topological conductors that faithfully reproduce relativistic density functional theory results. Sparse matrix techniques enable scalable simulations incorporating disorder and surface roughness, allowing systematic materials screening across sizes, chemical potentials, and transport directions. A dataset of 3000 surface transmission values reveals TiS, ZrB$_{2}$, and nitrides AN where A=(Mo, Ta, W) as candidates with conductance matching or exceeding copper and benchmark TSMs NbAs and NbP. This dataset further supports machine learning models for rapid interconnect compound identification. Our results highlight the promise of topological conductors in overcoming copper's scaling limits and provide a roadmap for data-driven discovery of next-generation interconnects.

cond-mat.mes-hall

The First Hardware Demonstration of a Universal Programmable RRAM-based Probabilistic Computer for Molecular Docking

Molecular docking is a critical computational strategy in drug design and discovery, but the complex diversity of biomolecular structures and flexible binding conformations create an enormous search space that challenges conventional computing methods. Although quantum computing holds promise for these challenges, it remains constrained by scalability, hardware limitations, and precision issues. Here, we report a prototype of a probabilistic computer (p-computer) that efficiently and accurately solves complex molecular docking for the first time, overcoming previously encountered challenges. At the core of the system is a p-computing chip based upon our artificial tunable probabilistic bits (p-bits), which are compatible with computing-in-memory schemes, based upon 180 nm CMOS technology and BEOL HfO2 RRAM. We successfully demonstrated the superior performance of the p-computer in practical ligand-protein docking scenarios. A 42-node molecular docking problem of lipoprotein with LolA-LolCDE complex-a key point in developing antibiotics against Gram-negative bacteria, was successfully solved. Our results align well with the Protein-Ligand Interaction Profiler tool. This work marks the first application of p-computing in molecular docking-based computational biology, which has great potential to overcome the limitations in success rate and efficiency of current technologies in addressing complex bioinformatics problems.

physics.comp-ph

Surface-dominant transport in Weyl semimetal NbAs nanowires for next-generation interconnects

Ongoing demands for smaller and more energy efficient electronic devices necessitate alternative interconnect materials with lower electrical resistivity at reduced dimensions. Despite the emergence of many promising candidates, synthesizing high quality nanostructures remains a major bottleneck in evaluating their performance. Here, we report the successful synthesis of Weyl semimetal NbAs nanowires via thermomechanical nanomolding, achieving single crystallinity and controlled diameters as small as 40 nm. Our NbAs nanowires exhibit a remarkably low room-temperature resistivity of 9.7 +/- 1.6 microOhm-cm, which is three to four times lower than their bulk counterpart. Theoretical calculations corroborate the experimental observations, attributing this exceptional resistivity reduction to surface dominant conduction with long carrier lifetime at finite temperatures. Further characterization of NbAs nanowires and bulk single crystals reveals high breakdown current density, robust stability, and superior thermal conductivity. Collectively, these properties highlight the strong potential of NbAs nanowires as next-generation interconnects, which can surpass the limitations of current copper-based interconnects. Technologically, our findings present a practical application of topological materials, while scientifically showcasing the fundamental properties uniquely accessible in nanoscale platforms.

cond-mat.mes-hall

A Novel P-bit-based Probabilistic Computing Approach for Solving the 3-D Protein Folding Problem

In the post-Moore era, the need for efficient solutions to non-deterministic polynomial-time (NP) problems is becoming more pressing. In this context, the Ising model implemented by the probabilistic computing systems with probabilistic bits (p-bits) has attracted attention due to the widespread availability of p-bits and support for large-scale simulations. This study marks the first work to apply probabilistic computing to tackle protein folding, a significant NP-complete problem challenge in biology. We represent proteins as sequences of hydrophobic (H) and polar (P) beads within a three-dimensional (3-D) grid and introduce a novel many-body interaction-based encoding method to map the problem onto an Ising model. Our simulations show that this approach significantly simplifies the energy landscape for short peptide sequences of six amino acids, halving the number of energy levels. Furthermore, the proposed mapping method achieves approximately 100 times acceleration for sequences consisting of ten amino acids in identifying the correct folding configuration. We predicted the optimal folding configuration for a peptide sequence of 36 amino acids by identifying the ground state. These findings highlight the unique potential of the proposed encoding method for solving protein folding and, importantly, provide new tools for solving similar NP-complete problems in biology by probabilistic computing approach.

physics.app-ph

Surface-dominated conductance scaling in Weyl semimetal NbAs

Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing, and communication. This necessitates a fundamental understanding of surface-state transport in nanoscale topological semimetals. Here, we investigate quantum transport in a prototypical topological semimetal NbAs to evaluate the potential of this class of materials for beyond-Cu interconnects in highly-scaled integrated circuits. Using density functional theory (DFT) coupled with non-equilibrium Green's function (NEGF) calculations, we show that the resistance-area RA product in NbAs films decreases with decreasing thickness at the nanometer scale, in contrast to a nearly constant RA product in ideal Cu films. This anomalous scaling originates from the disproportionately large number of surface conduction states which dominate the ballistic conductance by up to 70% in NbAs thin films. We also show that this favorable RA scaling persists even in the presence of surface defects, in contrast to RA sharply increasing with reducing thickness for films of conventional metals, such as Cu, in the presence of surface defects. These results underscore the promise of topological semimetals like NbAs as future back-end-of-line (BEOL) interconnect metals.

cond-mat.mes-hall

Ground-State Probabilistic Logic with the Simplest Binary Energy Landscape for Probabilistic Computing

We investigate the ground-state probabilistic logic based on a binary energy landscape (GSPL-BEL) model, implementing the many-body interactions within Ising model cells. The GSPL-BEL model offers a simplified binary energy landscape, enabling the conversion of traditional CMOS-based logic into a probabilistic graphical representation based on desired truth tables. Stochastic Ising cells, coupled with generic probabilistic devices exhibiting sigmoidal electrical responses, serve as the building blocks of the GSPL-BEL. Multi-body interactions are realized through cascaded CMOS-based XNOR gates and a passive resistor network. Through circuit simulations of three-node, four-node, and five-node systems, the functionality of the GSPL-BEL model is verified in forward, reverse, and partial-reverse operating modes, and applied to various arithmetic tasks. The many-body effect provides additional degrees of freedom in describing the system's energy function, resulting in distinct energy levels for valid and invalid states. This observation is supported by the binarized probability distribution observed in the steady state of the probabilistic circuits. Furthermore, compared to conventional combinatorial logic circuits, the GSPL-BEL-based circuit design requires a minimal number of probabilistic devices, as demonstrated in the invertible multiplier/integer factorizer circuit. These findings highlight the potential of the GSPL-BEL model for future high-performance logic circuit designs leveraging probabilistic devices.

physics.app-ph

Real Space Characterization of Nonlinear Hall Effect in Confined Directions

The nonlinear Hall effect (NLHE) is a phenomenon which could produce a transverse Hall voltage in a time-reversal-invariant material. Here, we report the real space characterization of NLHE evaluated through quantum transport in TaIrTe4 nanoribbon without the explicit Berry curvature dipole (BCD) information. We first characterize the NLHE in both transverse confined directions in global-level measurement. The impact of quantum confinement in NLHE is evaluated by adjusting the width of nanoribbons. Then, the probing area is trimmed to the atomic scale to evaluate the local texture, where we discover its unique patterns among the probed atomic groups for the first time. The analysis of charge distribution reveals the connections between NLHE's local patterns and its non-centrosymmetric nature, rendering nearly an order of Hall voltage enhancement through probe positioning. Our work paves the way to expand the range of NLHE study and unveil its physics in more versatile material systems.

cond-mat.mes-hall

Deterministic Spin-Orbit Torque Switching of Mn3Sn with the Interplay between Spin Polarization and Kagome Plane

Previous studies have demonstrated spin-orbit torque (SOT) switching of Mn3Sn where the spin polarization lies in the kagome plane (configuration I). However, the critical current density ($ J_{crit}$) is unrealistically large ($ J_{crit}$=$ 10^{14}$ A/$ m^2$) and independent on the external field ($ H_{ext}$). The stabilized magnetic state also depends on the initial state. These features conflict with the ferromagnet (FM) switching scheme as claimed in those studies, and thus call for other explanations. Alternatively, the system with the spin polarization perpendicular to the kagome plane (configuration II) is more like the FM based system since the spin polarization is orthogonal to all magnetic moments. In this work, we show SOT switching of Mn3Sn in configuration II. Similar to the FM, Jcrit and Hext are in the order of $ 10^{10}$ A/$ m^2$ and hundreds of Oersted, respectively. The switching result is also independent of the initial state. Interestingly, the unique spin structure of Mn3Sn also leads to distinct features from FM systems. We demonstrate that Jcrit increases linearly with Hext, and extrapolation gives ultralow $ J_{crit}$ for the field-free switching system. In addition, the switching polarity is opposite to the FM. We also provide the switching phase diagram as a guideline for experimental demonstration. Our work provides comprehensive understanding for the switching mechanism in both configurations. The switching protocol proposed in this work is more advantageous in realistic spintronic applications. We also clearly reveal the fundamental difference between FM and noncollinear antiferromagnetic switching.

cond-mat.mes-hall

Efficient domain wall motion driven by the out-of-plane spin polarization

Fast domain wall motion in systems with perpendicular magnetization is necessary for many novel applications such as the racetrack memory, domain wall logic devices and artificial synapses. The domain wall speed has been greatly improved after the demonstration of current driven domain wall motion using the spin transfer torque, and later achieved another leap due to the combined effect of spin-Hall effect and Dzyaloshinskii-Moriya interaction (DMI). However, only Neel wall can be effectively driven in the latter system. In this paper, we show that both Bloch and Neel domain walls can be effectively moved by exploiting the field-like torque with the out-of-plane spin polarization, which can be generated in materials with reduced symmetry. In addition, we find that the Neel wall and Bloch walls stabilized by the magnetostatic energy are easily distorted by the spin-orbit torque and they then enter the Walker breakdown region. External magnetic field and DMI are introduced to stabilize the domain wall, and a very high domain wall velocity over 500 m/s is obtained at a moderate current density of $2\times 10^{11} A/m^2$. In principle, this mechanism can be used to drive any types of domain walls. This work thus provides new degrees of freedom in the control of domain wall motion.

cond-mat.mes-hall

Probabilistic-Bits based on Ferroelectric Field-Effect Transistors for Stochastic Computing

A probabilistic-bit (p-bit) is the fundamental building block in the circuit network of a stochastic computing, and it could produce a continuous random bit-stream with tunable probability. Utilizing the stochasticity in few-domain ferroelectric material(FE), we propose for the first time, the p-bits based on ferroelectric FET. The stochasticity of the FE p-bits stems from the thermal noise-induced lattice vibration, which renders dipole fluctuations and is tunable by an external electric field. The impact of several key FE parameters on p-bits' stochasticity is evaluated, where the domain properties are revealed to play crucial roles. Furthermore, the integer factorization based on FE p-bits circuit network is performed to verify its functionality, and the accuracy is found to depend on FE p-bits' stochasticity. The proposed FE p-bits possess the advantages of both extremely low hardware coast and the compatibility with CMOS-technology, rendering it a promising candidate for stochastic computing applications.

cs.ET

Spatially Nonuniform Oscillations in Ferrimagnets Based on an Atomistic Model

The ferrimagnets, such as GdxFeCo(1-x), can produce ultrafast magnetic switching and oscillation due to the strong exchange field. The two-sublattices macrospin model has been widely used to explain the experimental results. However, it fails in describing the spatial nonuniform magnetic dynamics which gives rises to many important phenomenons such as the domain walls and skyrmions. Here we develop the two-dimensional atomistic model and provide a torque analysis method to study the ferrimagnetic oscillation. Under the spin-transfer torque, the magnetization oscillates in the exchange mode or the flipped exchange mode. When the Gd composition is increased, the exchange mode firstly disappears, and then appears again as the magnetization compensation point is reached. We show that these results can only be explained by analyzing the spatial distribution of magnetization and effective fields. In particular, when the sample is small, a spatial nonuniform oscillation is also observed in the square film. Our work reveals the importance of spatial magnetic distributions in understanding the ferrimagnetic dynamics. The method developed in this paper provides an important tool to gain a deeper understanding of ferrimagnets and antiferromagnets. The observed ultrafast dynamics can also stimulate the development of THz oscillators.

cond-mat.mes-hall

Unconventional Resistivity Scaling in Topological Semimetal CoSi

Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasing feature size contrary to conventional metals, which may highly impact the semiconductor industry. Here we study the resistivity scaling of a representative topological semimetal CoSi using realistic band structures and Green's function methods. We show that there exists a critical thickness d_c dividing different scaling trends. Above d_c, when the defect density is low such that surface conduction dominates, resistivity reduces with decreasing thickness; when the defect density is high such that bulk conduction dominates, resistivity increases in as conventional metals. Below d_c, the persistent remnants of the surface states give rise to decreasing resistivity down to the ultrathin limit, unlike in topological insulators. The observed CoSi scaling can apply to broad classes of topological semimetals, providing guidelines for materials screening and engineering. Our study shows that topological semimetals bear the potential of overcoming the resistivity scaling challenges in back-end-of-line interconnect applications.

cond-mat.mes-hall

Observation of the out-of-plane polarized spin current from CVD grown WTe2

Weyl semimetal Td-phase WTe2 possesses the spin-resolved band structure with strong spin-orbit coupling, holding promises as a useful spin source material. The noncentrosymmetric crystalline structure of Td-WTe2 endows the generation of the out-of-plane polarized spin, which is of great interest in magnetic memory applications. Previously, WTe2 was explored in spin devices based on mechanically exfoliated single crystal flakes with a size of micrometers. For practical spintronics applications, it is highly desirable to implement wafer-scale thin films. In this work, we utilize centimeter-scale chemical vapor deposition (CVD)-grown Td-WTe2 thin films and study the spin current generation by the spin torque ferromagnetic resonance technique. We find the in-plane and out-of-plane spin conductivities of 7.36 x 10^3 (h/2e) (ohm-m)^-1 and 1.76 x 10^3 (h/2e) (ohm-m)^-1, respectively, in CVD-growth 5 nm-WTe2. We further demonstrate the current-induced magnetization switching in WTe2/NiFe at room temperature in the domain wall motion regime, which may invigorate potential spintronic device innovations based on Weyl semimetals.

cond-mat.mtrl-sci

Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu

The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing the desirable properties of topological semimetals for back-end-of-line (BEOL) interconnects, we use CoSi as an example to demonstrate the decreasing resistance-area product with scaling and provide material-search guidelines.

cond-mat.mes-hall

Room temperature nonlinear Hall effect and wireless RF rectification in Weyl semimetal TaIrTe4

The nonlinear Hall effect (NLHE), which can produce a transverse voltage without any magnetic field, is a potential alternative for rectification or frequency doubling. However, the low temperature detection of NLHE limits its applications. Here, we report the room-temperature NLHE in a type-II Weyl semimetal TaIrTe4, which hosts a robust NLHE due to substantial broken inversion symmetry and large band overlapping at the Fermi level. We also observe a temperature-induced sign inversion of NLHE in TaIrTe4. Our theoretical calculations suggest that the observed sign inversion is a result of temperature-induced shift in the chemical potential indicating a direct correlation of NLHE with the electronic structure at the Fermi surface. Finally, the room-temperature NLHE in TaIrTe4 is exploited to demonstrate the wireless RF rectification with zero external bias and magnetic field. This work opens a door to realizing room temperature applications based on the NLHE in Weyl semimetals.

cond-mat.mtrl-sci

Electrical generation and detection of terahertz signal based on spin-wave emission from ferrimagnets

Terahertz (THz) signals, mainly generated by photonic or electronic approaches, are being sought for various applications, whereas the development of magnetic source might be a necessary step to harness the magnetic nature of electromagnetic radiation. We show that the relativistic effect on the current-driven domain-wall motion induces THz spin-wave emission in ferrimagnets. The required current density increases dramatically in materials with strong exchange interaction and rapidly exceeds 1012 A m-2, leading to the device breakdown and thus the lack of experimental evidence. By translating the collective magnetization oscillations into voltage signals, we propose a three-terminal device for the electrical detection of THz spin wave. Through material engineering, wide frequency range from 264 GHz to 1.1 THz and uniform continuous signals with improved output power can be obtained. As a reverse effect, the spin wave generated in this system is able to move ferrimagnetic domain wall. Our work provides guidelines for the experimental verification of THz spin wave, and could stimulate the design of THz spintronic oscillators for wideband applications as well as the all-magnon spintronic devices.

cond-mat.mes-hall

Spin-wave mediated interactions for Majority Computation using Skyrmions and Spin-torque Nano-oscillators

Recent progress in all-electrical nucleation, detection and manipulation of magnetic skyrmions has unlocked the tremendous potential of skyrmion-based spintronic devices. Here, we show via micromagnetic simulations that the stable magnetic oscillations of STNO radiate spin waves (SWs) that can be scattered in the presence of skyrmions in the near vicinity. Interference between SWs emitted by the STNO and SWs scattered by the skyrmion gives rise to interesting dynamics that leads to amplification or attenuation of STNO's magnetic oscillations. In the presence of strong Dzyaloshinskii-Moriya interaction (DMI), the amplified magnetic oscillations evolve into a new skyrmion. These interactions between skyrmions and STNOs are found to be identical for both Neel-type and Bloch-type skyrmions, and are not observed between domain walls and STNOs. These findings offer a novel perspective in processing information using single skyrmions and we propose a 3-bit majority gate for logic applications.

cond-mat.mes-hall