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Gennady I. Zebrev

Publications and source records attributed to Gennady I. Zebrev.

12 recordsLinked to original sources
arXiv2024

Physics-based Analytical Modeling of CMOS Latchup

Analysis of the steady-state Kirchhoff equations within the framework of a new physics-based equivalent circuit provides explicit expressions for the holding voltage and current for the resistive mode in bi-stable CMOS structures. The resulting expressions are functions of the physical parameters (temperature, doping level of the substrate, material band gap), which makes it possible to evaluate the influence of technological factors on the latchup parameters. In particular, an explicit formula was obtained for the critical charge for single event latchup as a function of process parameters and temperature.

physics.app-ph↗
arXiv2024

Proton and Neutron Induced SEU Cross Section Modeling and Simulation: A Unified Analytical Approach

A new physics-based compact model, which makes it possible to simulate in a unified way the neutron and proton of cosmic ray induced SEU cross sections, including effects from nuclear reaction products and from direct ionization by low-energy protons, has been proposed and vali-dated. The proposed approach is analytical and based on explicit analytical relationships and approximations with physics-based fitting parameters. GEANT4 or SRIM numerical calculations can be used as an aid to adjust or refine the phenomenological parameters or functions included in the model taking into account real geometrical configurations and chemical compositions of the devices. In particular, explicit energy dependencies of the soft error cross sections for protons and neutrons over a wide range of nucleon energies were obtained and validated. Main application areas of developed model include space physics, accelerator studies high energy physics and nuclear experiments.

nucl-th↗
arXiv2017

Physics-Based Modeling of TID Induced Global Static Leakage in Different CMOS Circuits

Compact modeling of inter-device radiation-induced leakage underneath the gateless thick STI oxide is presented and validated taking into account CMOS technology and hardness parameters, dose-rate and annealing effects, and dependence on electric modes under irradiation. It was shown that proposed approach can be applied for description of dose dependent static leakage currents in complex FPGA circuits.

cond-mat.mes-hall↗
arXiv2017

Multiple Cell Upset Partitioning for Simulation of Soft Error Rates in Space Systems with Error Correcting Codes

A self-consistent procedure for the ion-induced soft error rate calculation in space environment taking into account Error Correcting Codes is proposed. The method is based on the partitioning of the multiple cell events into groups with different multiplicities. The proposed partitioning method has been vali-dated for the ground and on-orbit literature data.

physics.space-ph↗
arXiv2017

GEANT4 Simulation of Nuclear Interaction Induced Soft Errors in Digital Nanoscale Electronics: Interrelation Between Proton and Heavy Ion Impacts

A simple and self-consistent approach has been proposed for simulation of the proton-induced soft error rate based on the heavy ion induced single event upset cross-section data and vice versa. The approach relies on the GEANT4 assisted Monte Carlo simulation of the secondary particle LET spectra produced by nuclear interactions. The method has been validated with the relevant in-flight soft error rate data for space protons and heavy ions. An approximate analytical relation is proposed and validated for a fast recalculation between the two types of experimental data.

physics.ins-det↗
arXiv2017

Compact Modeling and Simulation of Heavy Ion Induced Soft Error Rate in Space Environment: Principles and Validation

A simple physical model for calculation of the ion-induced soft error rate in space environment has been proposed, based on the phenomenological cross section notion. Proposed numerical procedure is adapted to the multiple cell upset characterization in highly scaled memories. Nonlocality of the ion impact has been revealed as the key concept determining the difference between physical processes in low scaled and highly scaled memories. The model has been validated by comparison between the simulation results and the literature on-board data. It was shown that proposed method provides single-valued prediction results correlating well with on-board data based solely on cross section data and LET spectra without any hidden fitting parameters and procedures.

physics.space-ph↗
arXiv2015

Temporal and Dose Kinetics of Tunnel Relaxation of Non-Equilibrium Near-Interfacial Charged Defects in Insulators

This paper is devoted mainly to mathematical aspects of modeling and simulation of tunnel relaxation of nonequilibrium charged oxide traps located at/near the interface insulator - conductive channel, for instance in irradiated MOS devices. The generic form of the tunnel annealing response function was derived from the rate equation for the charged defect buildup and annealing as a linear superposition of the responses of different defects with different time constants. Using this linear response function, a number of important practical problems are analyzed and discussed. Combined tunnel and thermal or RICN annealing, power-like temporal relaxation after a single ion strike into the gate oxide, are described in context of general approach.

cond-mat.mes-hall↗
arXiv2011

Small-Signal Capacitance and Current Parameter Modeling in Large-Scale High-Frequency Graphene Field-Effect Transistors

The analytical model of the small-signal current and capacitance characteristics of RF graphene FET is presented. The model is based on explicit distributions of chemical potential in graphene channels (including ambipolar conductivity at high source-drain bias) obtained in the framework of drift-diffusion current continuity equation solution. Small-signal transconductance and output conductance characteristics are modeled taking into account the two modes of drain current saturation including drift velocity saturation or electrostatic pinch-off. Analytical closed expression for the complex current gain and the cutoff frequency of high-frequency GFETs are obtained. The model allows describe an impact of parasitic resistances, capacitances, interface traps on extrinsic current gain and cut-off frequency.

cond-mat.mes-hall↗
arXiv2011

Graphene Field Effect Transistors: Diffusion-Drift Theory

Based on explicit solution of current continuity equation in the graphene FET's channel the semi-classical diffusion-drift description of the carrier transport and I-V characteristics model has been developed. Role of rechargeable defects (interface traps) near or at the interface between graphene and insulated layers has also described.

cond-mat.mes-hall↗