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Genrikh Stefanovich

Publications and source records attributed to Genrikh Stefanovich.

2 recordsLinked to original sources

Vanadium Dioxide: Metal-Insulator Transition, Electrical Switching and Oscillations. A Review of State of the Art and Recent Progress

Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this switching effect is associated with the metal-insulator transition (MIT). In an electrical circuit containing such a switching device, relaxation oscillations are observed if the load line intersects the I-V curve at a unique point in NDR region. All these effects are potentially prospective for designing various devices of oxide electronics, particularly, elements of dynamical neural networks based on coupled oscillators.

cond-mat.mtrl-sci↗

The Mott criterion: So simple and yet so complex

September 30, 2015 marks the 110th anniversary of the birth of the famous English physicist N. F. Mott. This article is dedicated to his memory. Here we consider the problem of metal-insulator transition. It is shown that the Mott criterion $a_{B}(n_{c})^{1/3} \approx 0.25$ is applicable not only to heavily doped semiconductors, but also to many other materials and systems, including strongly correlated transition-metal and rare-earth-metal compounds, such as vanadium oxides. A special emphasis is placed to the 'paramagnetic metal - antiferromagnetic insulator' transition in $V_{2}O_{3}$ doped with chromium. In Supplement we also briefly consider the history and state of the art of the Mott transition problem.

cond-mat.str-el↗