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Geoffrey C. Gardner

Publications and source records attributed to Geoffrey C. Gardner.

At least 55 records · Page 3Linked to original sources

Coherent multi-spin exchange coupling in a quantum-dot spin chain

Heisenberg exchange coupling between neighboring electron spins in semiconductor quantum dots provides a powerful tool for quantum information processing and simulation. Although so far unrealized, extended Heisenberg spin chains can enable long-distance quantum information transfer and the generation of non-equilibrium quantum states. In this work, we implement simultaneous, coherent exchange coupling between all nearest-neighbor pairs of spins in a quadruple quantum dot. The main challenge in implementing simultaneous exchange couplings is the nonlinear and nonlocal dependence of the exchange couplings on gate voltages. Through a combination of electrostatic simulation and theoretical modeling, we show that this challenge arises primarily due to lateral shifts of the quantum dots during gate pulses. Building on this insight, we develop two models, which can be used to predict the confinement gate voltages for a desired set of exchange couplings. Although the model parameters depend on the number of exchange couplings desired (suggesting that effects in addition to lateral wavefunction shifts are important), the models are sufficient to enable simultaneous and independent control of all three exchange couplings in a quadruple quantum dot. We demonstrate two-, three-, and four-spin exchange oscillations, and our data agree with simulations.

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Direct observation of anyonic braiding statistics at the $ν$=1/3 fractional quantum Hall state

Utilizing an electronic Fabry-Perot interferometer in which Coulomb charging effects are suppressed, we report experimental observation of anyonic braiding statistics for the $ν=1/3$ fractional quantum Hall state. Strong Aharonov-Bohm interference of the $ν=1/3$ edge mode is punctuated by discrete phase slips consistent with an anyonic phase of $θ_{anyon}=\frac{2π}{3}$. Our results are consistent with a recent theory of a Fabry-Perot interferometer operated in a regime in which device charging energy is small compared to the energy of formation of charged quasiparticles. Close correspondence between device operation and theoretical predictions substantiates our claim of observation of anyonic braiding.

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Conditional Teleportation of Quantum-Dot Spin States

Among the different platforms for quantum information processing, individual electron spins in semiconductor quantum dots stand out for their long coherence times and potential for scalable fabrication. The past years have witnessed substantial progress in the capabilities of spin qubits. However, coupling between distant electron spins, which is required for quantum error correction, presents a challenge, and this goal remains the focus of intense research. Quantum teleportation is a canonical method to transmit qubit states, but it has not been implemented in quantum-dot spin qubits. Here, we present evidence for quantum teleportation of electron spin qubits in semiconductor quantum dots. Although we have not performed quantum state tomography to definitively assess the teleportation fidelity, our data are consistent with conditional teleportation of spin eigenstates, entanglement swapping, and gate teleportation. Such evidence for all-matter spin-state teleportation underscores the capabilities of exchange-coupled spin qubits for quantum-information transfer.

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Stable quantum dots in an InSb two-dimensional electron gas

Indium antimonide (InSb) two-dimensional electron gases (2DEGs) have a unique combination of material properties: high electron mobility, strong spin-orbit interaction, large Landé g-factor, and small effective mass. This makes them an attractive platform to explore a variety of mesoscopic phenomena ranging from spintronics to topological superconductivity. However, there exist limited studies of quantum confined systems in these 2DEGs, often attributed to charge instabilities and gate drifts. We overcome this by removing the $δ$-doping layer from the heterostructure, and induce carriers electrostatically. This allows us to perform the first detailed study of stable gate-defined quantum dots in InSb 2DEGs. We demonstrate two distinct strategies for carrier confinement and study the charge stability of the dots. The small effective mass results in a relatively large single particle spacing, allowing for the observation of an even-odd variation in the addition energy. By tracking the Coulomb oscillations in a parallel magnetic field we determine the ground state spin configuration and show that the large g-factor ($\sim$30) results in a singlet-triplet transition at magnetic fields as low as 0.3 T.

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Toward durable Al-InSb hybrid heterostructures via epitaxy of 2ML interfacial InAs screening layers

The large Landé g-factor, high spin-orbit coupling, and low effective mass of the two-dimensional electron gas in InSb quantum wells combined with proximal superconductivity may realize a scalable platform for topological quantum computation. Aluminum thin films directly deposited on top of InSb planar structures result in the formation of a reactive AlInSb layer at the interface. This interlayer progressively consumes the whole Al film, resulting in a disordered AlInSb layer after few months at room temperature. We report on a heterostructure design that results in a significant increase of the durability of these hybrid Al-InSb heterostructures with the preservation of a pure Al film and sharp superconductor-semiconductor interface for more than one year. Two monolayers of epitaxial InAs at the superconductor-semiconductor interface prevent interfacial reactivity as evidenced by X-ray reflectivity and energy dispersive spectroscopy measurements. Structural characterizations of the Al films by transmission electron microscopy reveal the presence of tens of nanometers wide grains predominantly oriented with Al(110) parallel to InSb(001).

cond-mat.mtrl-sci↗

Band bending profile and band offset extraction at semiconductor-metal interfaces

The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interfaces with strong band bending a main difficulty originates from the in-built potentials which lead to broadened and shifted band spectra in spectroscopy measurements. In this work we present a method to resolve the band alignment of buried semiconductor-metal interfaces using core level photoemission spectroscopy and self-consistent electronic structure simulations. As a proof of principle we apply the method to a clean in-situ grown InAs(100)/Al interface, a system with a strong in-built band bending. Due to the high signal-to-noise ratio of the core level spectra the proposed methodology can be used on previously inaccessible semiconductor-metal interfaces and support targeted design of novel hybrid devices and form the foundation for a interface parameter database for specified synthesis processes of semiconductor-metal systems.

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A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas

We experimentally study quantized conductance in an electrostatically defined constriction in a high-mobility InAs two-dimensional electron gas. A parallel magnetic field lifts the spin degeneracy and allows for the observation of plateaus in integer multiples of $e^2/h$. Upon the application of a perpendicular magnetic field, spin-resolved magnetoelectric subbands are visible. Through finite bias spectroscopy we measure the subband spacings in both parallel and perpendicular direction of the magnetic field and determine the $g$-factor.

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Coherent spin state transfer via Heisenberg exchange

Quantum information science has the potential to revolutionize modern technology by providing resource-efficient approaches to computing, communication, and sensing. Although the physical qubits in a realistic quantum device will inevitably suffer errors, quantum error correction creates a path to fault-tolerant quantum information processing. Quantum error correction, however, requires that individual qubits can interact with many other qubits in the processor. Engineering this high connectivity can pose a challenge for platforms like electron spin qubits that naturally favor linear arrays. Here, we present an experimental demonstration of the transmission of electron spin states via Heisenberg exchange in an array of spin qubits. We transfer both single-spin and entangled states back and forth in a quadruple quantum-dot array without moving any electrons. Because it is scalable to large numbers of qubits, state transfer through Heisenberg exchange will be especially useful for multi-qubit gates and error-correction in spin-based quantum computers.

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Direct Entropy Measurement in a Mesoscopic Quantum System

The entropy of an electronic system offers important insights into the nature of its quantum mechanical ground state. This is particularly valuable in cases where the state is difficult to identify by conventional experimental probes, such as conductance. Traditionally, entropy measurements are based on bulk properties, such as heat capacity, that are easily observed in macroscopic samples but are unmeasurably small in systems that consist of only a few particles. In this work, we develop a mesoscopic circuit to directly measure the entropy of just a few electrons, and demonstrate its efficacy using the well understood spin statistics of the first, second, and third electron ground states in a GaAs quantum dot. The precision of this technique, quantifying the entropy of a single spin-$\frac{1}{2}$ to within 5\% of the expected value of $k_B \ln{2}$, shows its potential for probing more exotic systems. For example, entangled states or those with non-Abelian statistics could be clearly distinguished by their low-temperature entropy.

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Ballistic superconductivity and tunable $π$-junctions in InSb quantum wells

Two-dimensional electron gases (2DEGs) coupled to superconductors offer the opportunity to explore a variety of quantum phenomena. These include the study of novel Josephson effects, superconducting correlations in quantum (spin) Hall systems, hybrid superconducting qubits and emergent topological states in semiconductors with spin-orbit interaction (SOI). InSb is a well-known example of such a strong SOI semiconductor, however hybrid superconducting devices in InSb quantum wells remain unexplored. Here, we interface InSb 2DEGs with a superconductor (NbTiN) to create Josephson junctions (JJs), thus providing the first evidence of induced superconductivity in high quality InSb quantum wells. The JJs support supercurrent transport over several microns and display clear signatures of ballistic superconductivity. Furthermore, we exploit the large Landé g-factor and gate tunability of the junctions to control the current-phase relation, and drive transitions between the $0$ and $π$-states. This control over the free energy landscape allows us to construct a phase diagram identifying these $0$ and $π$-regions, in agreement with theory. Our results establish InSb quantum wells as a promising new material platform to study the interplay between superconductivity, SOI and magnetism.

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Aharonov-Bohm interference of fractional quantum Hall edge modes

We demonstrate operation of a small Fabry-Perot interferometer in which highly coherent Aharonov-Bohm oscillations are observed in the integer and fractional quantum Hall regimes. Using a novel heterostructure design, Coulomb effects are drastically suppressed. Coherency of edge mode interference is characterized by the energy scale for thermal damping, ${T_0=206}mK$ at $ν=1$. Selective backscattering of edge modes originating in the ${N=0,1,2}$ Landau levels allows for independent determination of inner and outer edge mode velocities. Clear Aharonov-Bohm oscillations are observed at fractional filling factors $ν=2/3$ and $ν=1/3$. Our device architecture provides a platform for measurement of anyonic braiding statistics.

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Evidence of topological superconductivity in planar Josephson junctions

Majorana zero modes are quasiparticle states localized at the boundaries of topological superconductors that are expected to be ideal building blocks for fault-tolerant quantum computing. Several observations of zero-bias conductance peaks measured in tunneling spectroscopy above a critical magnetic field have been reported as experimental indications of Majorana zero modes in superconductor/semiconductor nanowires. On the other hand, two dimensional systems offer the alternative approach to confine Ma jorana channels within planar Josephson junctions, in which the phase difference ϕ between the superconducting leads represents an additional tuning knob predicted to drive the system into the topological phase at lower magnetic fields. Here, we report the observation of phase-dependent zero-bias conductance peaks measured by tunneling spectroscopy at the end of Josephson junctions realized on a InAs/Al heterostructure. Biasing the junction to ϕ ~ π significantly reduces the critical field at which the zero-bias peak appears, with respect to ϕ = 0. The phase and magnetic field dependence of the zero-energy states is consistent with a model of Majorana zero modes in finite-size Josephson junctions. Besides providing experimental evidence of phase-tuned topological superconductivity, our devices are compatible with superconducting quantum electrodynamics architectures and scalable to complex geometries needed for topological quantum computing.

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Fast spin exchange between two distant quantum dots

The Heisenberg exchange interaction between neighboring quantum dots allows precise voltage control over spin dynamics, due to the ability to precisely control the overlap of orbital wavefunctions by gate electrodes. This allows the study of fundamental electronic phenomena and finds applications in quantum information processing. Although spin-based quantum circuits based on short-range exchange interactions are possible, the development of scalable, longer-range coupling schemes constitutes a critical challenge within the spin-qubit community. Approaches based on capacitative coupling and cavity-mediated interactions effectively couple spin qubits to the charge degree of freedom, making them susceptible to electrically-induced decoherence. The alternative is to extend the range of the Heisenberg exchange interaction by means of a quantum mediator. Here, we show that a multielectron quantum dot with 50-100 electrons serves as an excellent mediator, preserving speed and coherence of the resulting spin-spin coupling while providing several functionalities that are of practical importance. These include speed (mediated two-qubit rates up to several gigahertz), distance (of order of a micrometer), voltage control, possibility of sweet spot operation (reducing susceptibility to charge noise), and reversal of the interaction sign (useful for dynamical decoupling from noise).

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Magnetically-defined topological edge plasmons in edgeless electron gas

Topological materials bear gapped excitations in bulk yet protected gapless excitations at boundaries. Magnetoplasmons (MPs), as high-frequency density excitations of two-dimensional electron gas (2DEG) in a perpendicular magnetic field, embody a prototype of band topology for bosons. The time-reversal-breaking magnetic field opens a topological gap for bulk MPs up to the cyclotron frequency; topologically-protected edge magnetoplasmons (EMPs) bridge the bulk gap and propagate unidirectionally along system's boundaries. However, all the EMPs known to date adhere to physical edges where the electron density terminates abruptly. This restriction has made device application extremely difficult. Here we demonstrate a new class of topological edge plasmons -- domain-boundary magnetoplasmons (DBMPs), within a uniform edgeless 2DEG. Such DBMPs arise at the domain boundaries of an engineered sign-changing magnetic field and are protected by the difference of gap Chern numbers (+/-1) across the magnetic domains. They propagate unidirectionally along the domain boundaries and are immune to domain defects. Moreover, they exhibit wide tunability in the microwave frequency range under an applied magnetic field or gate voltage. Our study opens a new direction to realize high-speed reconfigurable topological devices.

cond-mat.mtrl-sci↗

Readout Of Singlet-Triplet Qubits At Large Magnetic Field Gradients

Visibility of singlet-triplet qubit readout is reduced to almost zero in large magnetic field gradients due to relaxation processes. Here we present a new readout technique that is robust against relaxation and allows for measurement when previously studied methods fail. This technique maps the qubit onto spin states that are immune to relaxation using a spin dependent electron tunneling process between the qubit and the lead. We probe this readout's performance as a function of magnetic field gradient and applied magnetic field, and optimize the pulse applied to the qubit through experiment and simulation.

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Superconducting Gatemon Qubit based on a Proximitized Two-Dimensional Electron Gas

The coherent tunnelling of Cooper pairs across Josephson junctions (JJs) generates a nonlinear inductance that is used extensively in quantum information processors based on superconducting circuits, from setting qubit transition frequencies and interqubit coupling strengths, to the gain of parametric amplifiers for quantum-limited readout. The inductance is either set by tailoring the metal-oxide dimensions of single JJs, or magnetically tuned by parallelizing multiple JJs in superconducting quantum interference devices (SQUIDs) with local current-biased flux lines. JJs based on superconductor-semiconductor hybrids represent a tantalizing all-electric alternative. The gatemon is a recently developed transmon variant which employs locally gated nanowire (NW) superconductor-semiconductor JJs for qubit control. Here, we go beyond proof-of-concept and demonstrate that semiconducting channels etched from a wafer-scale two-dimensional electron gas (2DEG) are a suitable platform for building a scalable gatemon-based quantum computer. We show 2DEG gatemons meet the requirements by performing voltage-controlled single qubit rotations and two-qubit swap operations. We measure qubit coherence times up to ~2 us, limited by dielectric loss in the 2DEG host substrate.

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Spin of a multielectron quantum dot and its interaction with a neighboring electron

We investigate the spin of a multielectron GaAs quantum dot in a sequence of nine charge occupancies, by exchange coupling the multielectron dot to a neighboring two-electron double quantum dot. For all nine occupancies, we make use of a leakage spectroscopy technique to reconstruct the spectrum of spin states in the vicinity of the interdot charge transition between a single- and a multielectron quantum dot. In the same regime we also perform time-resolved measurements of coherent exchange oscillations between the single- and multielectron quantum dot. With these measurements, we identify distinct characteristics of the multielectron spin state, depending on whether the dot's occupancy is even or odd. For three out of four even occupancies we do not observe any exchange interaction with the single quantum dot, indicating a spin-0 ground state. For the one remaining even occupancy, we observe an exchange interaction that we associate with a spin-1 multielectron quantum dot ground state. For all five of the odd occupancies, we observe an exchange interaction associated with a spin-1/2 ground state. For three of these odd occupancies, we clearly demonstrate that the exchange interaction changes sign in the vicinity of the charge transition. For one of these, the exchange interaction is negative (i.e. triplet-preferring) beyond the interdot charge transition, consistent with the observed spin-1 for the next (even) occupancy. Our experimental results are interpreted through the use of a Hubbard model involving two orbitals of the multielectron quantum dot. Allowing for the spin correlation energy (i.e. including a term favoring Hund's rules) and different tunnel coupling to different orbitals, we qualitatively reproduce the measured exchange profiles for all occupancies.

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Scaling of Majorana Zero-Bias Conductance Peaks

We report an experimental study of the scaling of zero-bias conductance peaks compatible with Majorana zero modes as a function of magnetic field, tunnel coupling, and temperature in one-dimensional structures fabricated from an epitaxial semiconductor-superconductor heterostructure. Results are consistent with theory, including a peak conductance that is proportional to tunnel coupling, saturates at $2e^2/h$, decreases as expected with field-dependent gap, and collapses onto a simple scaling function in the dimensionless ratio of temperature and tunnel coupling.

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