arXiv subjects

Geoffroy Hautier

Publications and source records attributed to Geoffroy Hautier.

At least 73 records · Page 4Linked to original sources

arXiv2021

Visualizing Temperature-Dependent Phase Stability in High Entropy Alloys

High Entropy Alloys (HEAs) contain near equimolar amounts of five or more elements and are a compelling space for materials design. Great emphasis is placed on identifying HEAs that form a homogeneous solid-solution, but the design of such HEAs is hindered by the difficulty of navigating stability relationships in high-component spaces. Traditional phase diagrams use barycentric coordinates to represent composition axes, which require D = (N - 1) spatial dimensions to represent an N-component system, meaning that HEA systems with N > 4 components cannot be readily visualized. Here, we propose forgoing barycentric composition axes in favor of two energy axes: a formation-energy axis and a 'reaction energy' axis. These Inverse Hull Webs offer an information-dense 2D representation that successfully capture complex phase stability relationships in N > 4 component systems. We use our new diagrams to visualize the transition of HEA solid-solutions from high-temperature stability to metastability upon quenching, and identify important thermodynamic features that are correlated with the persistence or decomposition of metastable HEAs.

cond-mat.mtrl-sci↗

arXiv2020

Ferroelectricity and multiferroicity in anti-Ruddlesden-Popper structures

Combining ferroelectricity with other properties such as visible light absorption or long-range magnetic order requires the discovery of new families of ferroelectric materials. Here, through the analysis of a high-throughput database of phonon band structures, we identify a new structural family of anti-Ruddlesden-Popper phases A$_4$X$_2$O (A=Ca, Sr, Ba, Eu, X=Sb, P, As, Bi) showing ferroelectric and anti-ferroelectric behaviors. The discovered ferroelectrics belong to the new class of hyperferroelectrics which polarize even under open-circuit boundary conditions. The polar distortion involves the movement of O anions against apical A cations and is driven by geometric effects resulting from internal chemical strains. Within this new structural family, we show that Eu$_4$Sb$_2$O combines coupled ferromagnetic and ferroelectric order at the same atomic site, a very rare occurrence in materials physics.

cond-mat.mtrl-sci↗

arXiv2020

Phonon-limited electron mobility in Si, GaAs and GaP with exact treatment of dynamical quadrupoles

We describe a new approach to compute the electron-phonon self-energy and carrier mobilities in semiconductors. Our implementation does not require a localized basis set to interpolate the electron-phonon matrix elements, with the advantage that computations can be easily automated. Scattering potentials are interpolated on dense $\mathbf{q}$ meshes using Fourier transforms and ab initio models to describe the long-range potentials generated by dipoles and quadrupoles. To reduce significantly the computational cost, we take advantage of crystal symmetries and employ the linear tetrahedron method and double-grid integration schemes, in conjunction with filtering techniques in the Brillouin zone. We report results for the electron mobility in Si, GaAs, and GaP obtained with this new methodology.

cond-mat.mtrl-sci↗

arXiv2020

Electron-Phonon Beyond Fröhlich: Dynamical Quadrupoles in Polar and Covalent Solids

We include the treatment of quadrupolar fields beyond the Fröhlich interaction in the first-principles electron-phonon vertex in semiconductors. Such quadrupolar fields induce long-range interactions that have to be taken into account for accurate physical results. We apply our formalism to Si (nonpolar), GaAs, and GaP (polar) and demonstrate that electron mobilities show large errors if dynamical quadrupoles are not properly treated.

cond-mat.mtrl-sci↗

arXiv2020

Structure motif centric learning framework for inorganic crystalline systems

Incorporation of physical principles in a network-based machine learning (ML) architecture is a fundamental step toward the continued development of artificial intelligence for materials science and condensed matter physics. In this work, as inspired by the Pauling rule, we propose that structure motifs (polyhedral formed by cations and surrounding anions) in inorganic crystals can serve as a central input to a machine learning framework for crystalline inorganic materials. Taking metal oxides as examples, we demonstrated that, an unsupervised learning algorithm Motif2Vec is able to convert the presence of structure motifs and their connections in a large set of crystalline compounds into unique vector representations. The connections among complex materials can be largely determined by the presence of different structure motifs and their clustering information are identified by our Motif2Vec algorithm. To demonstrate the novel use of structure motif information, we show that a motif-centric learning framework can be effectively created by combining motif information with the recently developed atom-based graph neural networks to form an atom-motif dual graph network (AMDNet). Taking advantage of node and edge information on both atomic and motif level, the AMDNet is more accurate than an atom graph network in predicting electronic structure related material properties of metal oxides such as band gaps. The work illustrates the route toward fundamental design of graph neural network learning architecture for complex material properties by incorporating beyond-atom physical principles.

cond-mat.mtrl-sci↗

arXiv2020

Combining phonon accuracy with high transferability in Gaussian approximation potential models

Machine learning driven interatomic potentials, including Gaussian approximation potential (GAP) models, are emerging tools for atomistic simulations. Here, we address the methodological question of how one can fit GAP models that accurately predict vibrational properties in specific regions of configuration space, whilst retaining flexibility and transferability to others. We use an adaptive regularization of the GAP fit that scales with the absolute force magnitude on any given atom, thereby exploring the Bayesian interpretation of GAP regularization as an "expected error", and its impact on the prediction of physical properties for a material of interest. The approach enables excellent predictions of phonon modes (to within 0.1-0.2 THz) for structurally diverse silicon allotropes, and it can be coupled with existing fitting databases for high transferability. These findings and workflows are expected to be useful for GAP-driven materials modeling more generally.

cond-mat.mtrl-sci↗

arXiv2020

Boron phosphide as a \emph{p}-type transparent conductor: optical absorption and transport through electron-phonon coupling

Boron phosphide has recently been identified as a potential high hole mobility transparent conducting material. This promise arises from its low hole effective masses. However, BP has a relatively small 2 eV indirect band gap which will affect its transparency. In this work, we computationally study both optical absorption across the indirect gap and phonon-limited electronic transport to quantify the potential of boron phosphide as a \emph{p}-type transparent conductor. We find that phonon-mediated indirect optical absorption is weak in the visible spectrum and that the phonon-limited hole mobility is very high (around 900 cm$^2$/Vs) at room temperature. This exceptional mobility comes from a combination of low hole effective mass and very weak scattering by polar phonon modes. We rationalize the weak scattering by the less ionic bonding in boron phosphide compared to oxides. We suggest this could be a general advantage of non-oxides for \emph{p}-type transparent conducting applications. Using our computed properties, we assess the transparent conductor figure of merit of boron phosphide and shows that it exceeds by one order of magnitude that of established \emph{p}-type transparent conductors, confirming the potential of this material.

cond-mat.mtrl-sci↗

arXiv2019

Sr3CrN3: a new electride with partially filled d-shells

Electrides are ionic crystals in which the electrons prefer to occupy free space, serving as anions. Because the electrons prefer to be in the pockets, channels, or layers to the atomic orbitals around the nuclei, it has been challenging to find electrides with partially filled d-shells, since an unoccupied d-shell provides an energetically favourable location for the electrons to occupy. We recently predicted the existence of electrides with partially filled d-shells using high-throughput computational screening. Here, we provide an experimental support using X-ray absorption spectroscopy and X-ray and neutron diffraction to show that Sr3CrN3 is indeed an electride despite its partial d-shell configuration. Our findings indicate that Sr3CrN3 is the first known electride with a partially filled d-shell, in agreement with theory, which significantly broadens the criteria for the search for new electride materials.

cond-mat.mtrl-sci↗

arXiv2019

Searching for Materials with High Refractive Index and Wide Band Gap: A First-Principles High-Throughput Study

Materials combining both a high refractive index and a wide band gap are of great interest for optoelectronic and sensor applications. However, these two properties are typically described by an inverse correlation with high refractive index appearing in small gap materials and vice-versa. Here, we conduct a first-principles high-throughput study on more than 4000 semiconductors (with a special focus on oxides). Our data confirm the general inverse trend between refractive index and band gap but interesting outliers are also identified. The data are then analyzed through a simple model involving two main descriptors: the average optical gap and the effective frequency. The former can be determined directly from the electronic structure of the compounds, but the latter cannot. This calls for further analysis in order to obtain a predictive model. Nonetheless, it turns out that the negative effect of a large band gap on the refractive index can counterbalanced in two ways: (i) by limiting the difference between the direct band gap and the average optical gap which can be realized by a narrow distribution in energy of the optical transitions and (ii) by increasing the effective frequency which can be achieved through either a high number of transitions from the top of the valence band to the bottom of the conduction or a high average probability for these transitions. Focusing on oxides, we use our data to investigate how the chemistry influences this inverse relationship and rationalize why certain classes of materials would perform better. Our findings can be used to search for new compounds in many optical applications both in the linear and non-linear regime (waveguides, optical modulators, laser, frequency converter, etc.).

cond-mat.mtrl-sci↗

arXiv2018

Computationally-driven, high throughput identification of CaTe and Li$_\textrm{3}$Sb as promising candidates for high mobility $p$-type transparent conducting materials

High-performance $p$-type transparent conducting materials (TCMs) must exhibit a rare combination of properties including high mobility, transparency and $p$-type dopability. The development of high-mobility/conductivity $p$-type TCMs is necessary for many applications such as solar cells, or transparent electronic devices. Oxides have been traditionally considered as the most promising chemical space to dig out novel $p$-type TCMs. However, non-oxides might perform better than traditional $p$-type TCMs (oxides) in terms of mobility. We report on a high-throughput (HT) computational search for non-oxide $p$-type TCMs from a large dataset of more than 30,000 compounds which identified CaTe and Li$_\textrm{3}$Sb as very good candidates for high-mobility $p$-type TCMs. From our calculations, both compounds are expected to be $p$-type dopable: intrinsically for Li$_\textrm{3}$Sb while CaTe would require extrinsic doping. Using electron-phonon computations, we estimate hole mobilities at room-temperature to be about 20 and 70 cm$^2$/Vs for CaTe and Li$_\textrm{3}$Sb, respectively. The computed hole mobility for Li$_\textrm{3}$Sb is quite exceptional and comparable with the electron mobility in the best $n$-type TCMs.

cond-mat.mtrl-sci↗

arXiv2018

Are Small Polarons Always Detrimental to Transparent Conducting Oxides ?

Transparent conducting oxides (TCOs) are essential to many technologies including solar cells and transparent electronics. The search for high performance n- or p-type TCOs has mainly focused on materials offering transport through band carriers instead of small polarons. In this work, we break this paradigm and demonstrate using well-known physical models that, in certain circumstances, TCOs exhibiting transport by small polarons offer a better combination of transparency and conductivity than materials conducting through band transport. We link this surprising finding to the fundamentally different physics of optical absorption for band and polaronic carriers. Our work rationalizes the good performances of recently emerging small-polaronic Cr-based p-type TCOs such as Sr-doped LaCrO$_3$ and outlines design principles for the development of high-performance TCOs based on transport by small polarons. This opens new avenues for the discovery of high-performance TCOs especially p-type.

cond-mat.mtrl-sci↗

arXiv2018

An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure

In the design of materials with low lattice thermal conductivity, compounds with high density, low speed of sound, and complexity at either the atomic, nano- or microstructural level are preferred. The layered compound Mg$_3$Sb$_2$ defies these prevailing paradigms, exhibiting lattice thermal conductivity comparable to PbTe and Bi$_2$Te$_3$, despite its low density and simple structure. The excellent thermoelectric performance ($zT$ $\sim$ 1.5) in $n$-type Mg$_3$Sb$_2$ has thus far been attributed to its multi-valley conduction band, while its anomalous thermal properties have been largely overlooked. To explain the origin of the low lattice thermal conductivity of Mg$_3$Sb$_2$, we have used both experimental methods and ab initio phonon calculations to investigate trends in the elasticity, thermal expansion and anharmonicity of $A$Mg$_2Pn_2$ Zintl compounds with $A$ = Mg, Ca, Yb, and $Pn$ = Sb and Bi. Phonon calculations within the quasi-harmonic approximation reveal large mode Grüneisen parameters in Mg$_3$Sb$_2$ compared with isostructural compounds, in particular in transverse acoustic modes involving shearing of adjacent anionic layers. Measurements of the elastic moduli and sound velocity as a function of temperature using resonant ultrasound spectroscopy provide a window into the softening of the acoustic branches at high temperature, confirming their exceptionally high anharmonicity. We attribute the anomalous thermal behavior of Mg$_3$Sb$_2$ to the diminutive size of Mg, which may be too small for the octahedrally-coordinated site, leading to weak, unstable interlayer Mg-Sb bonding. This suggests more broadly that soft shear modes resulting from undersized cations provide a potential route to achieving low lattice thermal conductivity low-density, earth-abundant materials.

cond-mat.mtrl-sci↗

arXiv2018

High-Throughput Identification of Electrides from all Known Inorganic Materials

In this paper, we present the results of a large-scale, high-throughput computational search for electrides among all known inorganic materials. Analyzing a database of density functional theory results on more than 60,000 compounds, we identify 69 new electride candidates. We report on all these candidates and discuss the structural and chemical factors leading to electride formation. Among these candidates, our work identifies the first partially-filled 3d transition metal containing electrides Ba3CrN3 and Sr3CrN3; an unexpected finding that contravenes conventional chemistry.

cond-mat.mtrl-sci↗

arXiv2018

Convergence and pitfalls of density functional perturbation theory phonons calculations from a high-throughput perspective

The diffusion of large databases collecting different kind of material properties from high-throughput density functional theory calculations has opened new paths in the study of materials science thanks to data mining and machine learning techniques. Phonon calculations have already been employed successfully to predict materials properties and interpret experimental data, e.g. phase stability, ferroelectricity and Raman spectra, so their availability for a large set of materials will further increase the analytical and predictive power at hand. Moving to a larger scale with density functional perturbation calculations, however, requires the presence of a robust framework to handle this challenging task. In light of this, we automatized the phonon calculation and applied the result to the analysis of the convergence trends for several materials. This allowed to identify and tackle some common problems emerging in this kind of simulations and to lay out the basis to obtain reliable phonon band structures from high-throughput calculations, as well as optimizing the approach to standard phonon simulations.

cond-mat.mtrl-sci↗

arXiv2017

PyCDT: A Python toolkit for modeling point defects in semiconductors and insulators

Point defects have a strong impact on the performance of semiconductor and insulator materials used in technological applications, spanning microelectronics to energy conversion and storage. The nature of the dominant defect types, how they vary with processing conditions, and their impact on materials properties are central aspects that determine the performance of a material in a certain application. This information is, however, difficult to access directly from experimental measurements. Consequently, computational methods, based on electronic density functional theory (DFT), have found widespread use in the calculation of point-defect properties. Here we have developed the Python Charged Defect Toolkit (PyCDT) to expedite the setup and post-processing of defect calculations with widely used DFT software. PyCDT has a user-friendly command-line interface and provides a direct interface with the Materials Project database. This allows for setting up many charged defect calculations for any material of interest, as well as post-processing and applying state-of-the-art electrostatic correction terms. Our paper serves as a documentation for PyCDT, and demonstrates its use in an application to the well-studied GaAs compound semiconductor. We anticipate that the PyCDT code will be useful as a framework for undertaking readily reproducible calculations of charged point-defect properties, and that it will provide a foundation for automated, high-throughput calculations.

cond-mat.mtrl-sci↗

arXiv2016

Influence of the "second gap" on the transparency-conductivity compromise in transparent conducting oxides: an ab initio study

Transparent conducting oxides (TCOs) are essential to many technologies. These materials are doped (\emph{n}- or \emph{p}-type) oxides with a large enough band gap (ideally $>$3~eV) to ensure transparency. However, the high carrier concentration present in TCOs lead additionally to the possibility for optical transitions from the occupied conduction bands to higher states for \emph{n}-type materials and from lower states to the unoccupied valence bands for \emph{p}-type TCOs. The "second gap" formed by these transitions might limit transparency and a large second gap has been sometimes proposed as a design criteria for high performance TCOs. Here, we study the influence of this second gap on optical absorption using \emph{ab initio} computations for several well-known \emph{n}- and \emph{p}-type TCOs. Our work demonstrates that most known \emph{n}-type TCOs do not suffer from second gap absorption in the visible even at very high carrier concentrations. On the contrary, \emph{p}-type oxides show lowering of their optical transmission for high carrier concentrations due to second gap effects. We link this dissimilarity to the different chemistries involved in \emph{n}- versus typical \emph{p}-type TCOs. Quantitatively, we show that second gap effects lead to only moderate loss of transmission (even in p-type TCOs) and suggest that a wide second gap, while beneficial, should not be considered as a needed criteria for a working TCO.

cond-mat.mtrl-sci↗

arXiv2015

Low-Dimensional Transport and Large Thermoelectric Power Factors in Bulk Semiconductors by Band Engineering of Highly Directional Electronic States

Thermoelectrics are promising to address energy issues but their exploitation is still hampered by low efficiencies. So far, much improvement has been achieved by reducing the thermal conductivity but less by maximizing the power factor. The latter imposes apparently conflicting requirements on the band structure: a narrow energy distribution and a low effective mass. Quantum confinement in nanostructures or the introduction of resonant states were suggested as possible solutions to this paradox but with limited success. Here, we propose an original approach to fulfill both requirements in bulk semiconductors. It exploits the highly-directional character of some orbitals to engineer the band-structure and produce a type of low-dimensional transport similar to that targeted in nanostructures, while retaining isotropic properties. Using first-principles calculations, the theoretical concept is demonstrated in Fe$_2$YZ Heusler compounds, yielding power factors 4-5 times larger than in classical thermoelectrics at room temperature. Our findings are totally generic and rationalize the search of alternative compounds with a similar behavior. Beyond thermoelectricity, these might be relevant also in the context of electronic, superconducting or photovoltaic applications.

cond-mat.mtrl-sci↗

arXiv2014

High-Mobility Bismuth-based Transparent P-Type Oxide from High-throughput Material Screening

Transparent oxides are essential building blocks to many technologies, ranging from components in transparent electronics, transparent conductors, to absorbers and protection layers in photovoltaics and photoelectrochemical devices. However, thus far, it has been difficult to develop p-type oxides with wide band gap and high hole mobility; current state-of-art transparent p-type oxides have hole mobility in the range of < 10 cm$^2$/Vs, much lower than their n-type counterparts. Using high-throughput computational screening to guide the discovery of novel oxides with wide band gap and high hole mobility, we report the computational identification and the experimental verification of a bismuth-based double-perovskite oxide that meets these requirements. Our identified candidate, Ba$_2$BiTaO$_6$, has an optical band gap larger than 4 eV and a Hall hole mobility above 30 cm$^2$/Vs. We rationalize this finding with molecular orbital intuitions; Bi$^{3+}$ with filled s-orbitals strongly overlap with the oxygen p, increasing the extent of the metal-oxygen covalency and effectively reducing the valence effective mass, while Ta$^{5+}$ forms a conduction band with low electronegativity, leading to a high band gap beyond the visible range. Our concerted theory-experiment effort points to the growing utility of a data-driven materials discovery and the combination of both informatics and chemical intuitions as a way to discover future technological materials.

cond-mat.mtrl-sci↗