arXiv subjects

George S. Tulevski

Publications and source records attributed to George S. Tulevski.

3 recordsLinked to original sources

arXiv2018

Intrinsically ultrastrong plasmon-exciton interactions in crystallized films of carbon nanotubes

In cavity quantum electrodynamics, optical emitters that are strongly coupled to cavities give rise to polaritons with characteristics of both the emitters and the cavity excitations. We show that carbon nanotubes can be crystallized into chip-scale, two-dimensionally ordered films and that this new material enables intrinsically ultrastrong emitter-cavity interactions: rather than interacting with external cavities, nanotube excitons couple to the near-infrared plasmon resonances of the nanotubes themselves. Our polycrystalline nanotube films have a hexagonal crystal structure, ~25 nm domains, and a 1.74 nm lattice constant. With this extremely high nanotube density and nearly ideal plasmon-exciton spatial overlap, plasmon-exciton coupling strengths reach 0.5 eV, which is 75% of the bare exciton energy and a near record for room-temperature ultrastrong coupling. Crystallized nanotube films represent a milestone in nanomaterials assembly and provide a compelling foundation for high-ampacity conductors, low-power optical switches, and tunable optical antennas.

cond-mat.mes-hall↗

arXiv2017

Photo-Chemically Directed Self-Assembly of Carbon Nanotubes on Surfaces

Transistors incorporating single-wall carbon nanotubes (CNTs) as the channel material are used in a variety of electronics applications. However, a competitive CNT-based technology requires the precise placement of CNTs at predefined locations of a substrate. One promising placement approach is to use chemical recognition to bind CNTs from solution at the desired locations on a surface. Producing the chemical pattern on the substrate is challenging. Here we describe a one-step patterning approach based on a highly photosensitive surface monolayer. The monolayer contains chromophopric group as light sensitive body with heteroatoms as high quantum yield photolysis center. As deposited, the layer will bind CNTs from solution. However, when exposed to ultraviolet (UV) light with a low dose (60 mJ/cm2) similar to that used for conventional photoresists, the monolayer cleaves and no longer binds CNTs. These features allow standard, wafer-scale UV lithography processes to be used to form a patterned chemical monolayer without the need for complex substrate patterning or monolayer stamping.

physics.chem-ph↗

arXiv2008

Chemical Doping and Electron-Hole Conduction Asymmetry in Graphene Devices

We investigate polyethylene imine and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points.

cond-mat.mes-hall↗