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Gerd Schönhense

Publications and source records attributed to Gerd Schönhense.

At least 19 recordsLinked to original sources

Epitaxial growth and magnetic phase transitions in non-centrosymmetric EuPdSi$_3$ thin films

Non-centrosymmetric magnetic materials are a promising platform for stabilizing chiral spin textures, such as skyrmions and cycloidal magnetic states. This is particularly true in epitaxial thin film geometries, where strain and interface effects offer additional control. Herein, we report on the first epitaxial thin films of EuPdSi$_3$ grown by molecular beam epitaxy on MgO(001). X-ray diffraction confirms an epitaxial relationship of tetragonal EuPdSi$_3$ in the BaNiSn$_3$ structure with out-of-plane c-axis orientation and parallel in-plane a-axes. Hard x-ray photoelectron spectroscopy reveals a stable Eu valence of 2.0, yielding a large magnetic moment of approximately 7 $μ_B$ per Eu atom in accordance with Hund's rule. Owing to the non-centrosymmetric crystal structure, non-collinear magnetic states such as Néel-type skyrmions and cycloidal phases are allowed by symmetry. Electronic transport measurements reveal two magnetic phase transitions at 19 K and 15 K in zero applied field. Under magnetic fields applied along the crystallographic [100] and [001] directions, distinct temperature dependent magnetic phases emerge, demonstrating the sensitivity of the magnetic ground state to field orientation in epitaxial EuPdSi$_3$ thin films.

cond-mat.mtrl-sci↗

Time- and Polarization-Resolved Extreme Ultraviolet Momentum Microscopy

We report the development of an instrument combining an ultrafast, high-repetition-rate, polarization-tunable monochromatic extreme ultraviolet (XUV, 21.6 eV) beamline and a next-generation momentum microscope endstation. This setup enables time- and angle-resolved photoemission spectroscopy of quantum materials, offering multimodal photoemission dichroism capabilities. The momentum microscope simultaneously detects the full surface Brillouin zone over an extended binding energy range. It is equipped with advanced electron optics, including a new type of front lens that supports multiple operational modes. Enhanced spatial resolution is achieved by combining the small XUV beam footprint (33 $μ$m by 45 $μ$m) with the selection of small regions of interest using apertures positioned in the Gaussian plane of the momentum microscope. This instrument achieves an energy resolution of 44 meV and a temporal resolution of 144 fs. We demonstrate the capability to perform linear, Fourier, and circular dichroism in photoelectron angular distributions from photoexcited 2D materials. This functionality paves the way for time-, energy-, and momentum-resolved investigations of orbital and quantum geometrical properties underlying electronic structures of quantum materials driven out of equilibrium.

cond-mat.mtrl-sci↗

Floquet-Bloch Valleytronics

Driving quantum materials out-of-equilibrium makes it possible to generate states of matter inaccessible through standard equilibrium tuning methods. Upon time-periodic coherent driving of electrons using electromagnetic fields, the emergence of Floquet-Bloch states enables the creation and control of exotic quantum phases. In transition metal dichalcogenides, broken inversion symmetry within each monolayer results in a non-zero Berry curvature at the K and K$^{\prime}$ valley extrema, giving rise to chiroptical selection rules that are fundamental to valleytronics. Here, we bridge the gap between these two concepts and introduce Floquet-Bloch valleytronics. Using time- and polarization-resolved extreme ultraviolet momentum microscopy combined with state-of-the-art ab initio theory, we demonstrate the formation of valley-polarized Floquet-Bloch states in 2H-WSe$_2$ upon below-bandgap coherent electron driving with chiral light pulses. We investigate quantum path interference between Floquet-Bloch and Volkov states, showing that this interferometric process depends on the valley pseudospin and light polarization-state. Conducting extreme ultraviolet photoemission circular dichroism in these nonequilibrium settings reveals the potential for controlling the orbital character of Floquet-engineered states. These findings link Floquet engineering and quantum geometric light-matter coupling in two-dimensional materials. They can serve as a guideline for reaching novel out-of-equilibrium phases of matter by dynamically breaking symmetries through coherent dressing of winding Bloch electrons with tailored light pulses.

cond-mat.mes-hall↗

Ge$_{1-x}$Si$_{x}$ single crystals for Ge hole spin qubit integration

Spin qubits are fundamental building blocks of modern quantum computing devices. The path of Ge-based hole-spin qubits has several advantages over Si-based electron-spin systems, such as the absence of valley band degeneracy, the possibility of efficient field control due to large spin-orbit coupling, and smaller effective masses. Among the possible Ge qubit devices, Ge/GeSi planar heterostructures have proven to be favourable for upscaling and fabrication. The Si concentration of the straining GeSi buffer serves as an important tuning parameter for the electronic structure of Ge/GeSi qubits. A particularly low Si concentration of x = 0.15 of the Ge$_{0.85}$Si$_{0.15}$ crystal should enable minimal lattice strain for spin qubit heterostructures, which is difficult to stabilize as a random alloy. We present a synchrotron-based study to investigate the chemical composition, valence band electronic structure and local atomic structure of a Ge$_{0.85}$Si$_{0.15}$ single crystal using the advanced combination of hard X-ray photoelectron spectroscopy (HAXPES), hard X-ray momentum microscopy (HarMoMic) and X-ray photoelectron diffraction (XPD). We found that the Ge$_{0.85}$Si$_{0.15}$ crystal has an individual, uniform valence band structure, with no signs of phase separation. The shapes of the valence bands resemble those of pure Ge, as do the low effective masses. XPD experiments and Bloch wave calculations, show the Si atoms located at Ge lattice sites within the crystal, forming a random alloy. This high chemical, electronic and structural quality of Ge$_{0.85}$Si$_{0.15}$ single-crystal substrates is of crucial importance for their implementation to enable long spin lifetimes in Ge-based hole-spin qubits. The results emphasise the power of combined X-ray spectromicroscopy techniques, which provide key insights into the qubit building blocks that form the basis of quantum technologies.

cond-mat.mtrl-sci↗

Moiré-Tunable Localization of Simultaneous Type I and Type II Band Alignment in a MoSe2/WS2 Heterobilayer

Moiré heterobilayers exhibiting spatially varying band alignment and electron and hole localization that can be precisely controlled through the twist angle have emerged as exciting platforms for studying complex quantum phenomena. While most heterobilayers of transition metal dichalcogenides (TMDs) have a type II band alignment, the introduction of type I band alignment could enable stronger light-matter coupling and enhanced radiative emission. Here, we show through a combination of first-principles GW plus Bethe Salpeter equation (GW-BSE) calculations and time- and angle-resolved photoemission spectroscopy (tr-ARPES) measurements that contrary to previous understanding, the MoSe2/WS2 heterobilayer has a type I band alignment at large twist angles and simultaneous regions of type I and type II band alignment due to the structural reconstruction in different high symmetry regions at small twist angles. In tr-ARPES, consistent with our calculations, a long-lived electron population is only observed in MoSe2 for samples with large twist angles, while in samples with small twist angles, signals from two distinct long-lived excitons are observed. Moreover, despite the near degeneracy of the conduction bands of the two layers, no excitonic hybridization occurs, suggesting that previously observed absorption peaks in this material arise from lattice reconstruction. Our findings clarify the complex energy landscape in MoSe2/WS2 heterostructures, where the coexistence of type I and type II band alignment opens the door to moiré-tunable optoelectronic devices with intrinsic lateral heterojunctions.

cond-mat.mtrl-sci↗

Spin polarization of the two-dimensional electron gas at the EuO/SrTiO$_3$ interface

Spin-polarized two-dimensional electron gases (2DEGs) are of particular interest for functional oxide electronics applications. The redox-created 2DEG residing on the strontium titanate, SrTiO$_3$ (STO), side of a europium monoxide (EuO)/SrTiO$_3$ (001) interface is expected to be significantly spin-polarized due to the proximity to the strong ($7\,μ_B/f.u.$) Heisenberg ferromagnet EuO. We apply magnetic circular dichroism in the angular distribution (MCDAD) of photoemitted electrons to investigate whether and how the induced spin polarization of the 2DEG depends on the dimensionality of the overlaying EuO layer. The experimental data are complemented by density functional theory calculations with a Hubbard $U$ term (DFT+$U$). We show that the EuO/STO interfacial 2DEG is spin-polarized even for ultrathin EuO overlayers, starting at an EuO threshold thickness of only two monolayers. Additional EuO monolayers even increase the induced magnetic Ti moment and thus the spin polarization of the 2DEG. Our results and the potential to enhance the magnetic order of EuO by other proximity effects indicate that the EuO/STO (001) interface is an ideal template for creating (multi-)functional spin-polarized 2DEGs for application in oxide electronics.

cond-mat.mtrl-sci↗

Cavity-Enhanced High-order Harmonic Generation for High-Performance Time-resolved Photoemission Experiments

Recent breakthroughs in high repetition-rate extreme ultraviolet (XUV) light sources and photoelectron analyzers have led to dramatic advances in the performance of time-resolved photoemission experiments. In this perspective article, we discuss the application of cavity-enhanced high-order harmonic generation (CE-HHG), with repetition rates exceeding 10 MHz, to photoemission experiments using advanced endstations incorporating time-of-flight photoelectron analyzers. We discuss recent results, perspective on future areas for further technological improvement, and the wide array of science enabled by ultrafast XUV photoemission experiments, now in a qualitatively new regime.

physics.optics↗

Hybrid Photoelectron Momentum Microscope at the Soft X-ray Beamline I09 of the Diamond Light Source

Soft X-ray momentum microscopy of crystalline solids is a highly efficient approach to map the photoelectron distribution in four-dimensional (E,k) parameter space over the entire Brillouin zone. The fixed sample geometry eliminates any modulation of the matrix element otherwise caused by changing the angle of incidence. We present a new endstation at the soft X-ray branch of beamline I09 at the Diamond Light Source, UK. The key component is a large single hemispherical spectrometer combined with a time-of-flight analyzer behind the exit slit. The photon energy ranges from hv = 105 eV to 2 keV, with circular polarization available for hv > 150 eV, allowing for circular dichroism measurements in angle-resolved photoemission (CD-ARPES). A focused and monochromatized He lamp is used for offline measurements. Under k-imaging conditions, energy and momentum resolution are 10.2 meV (FWHM) and 0.010 angstroms^-1 (base resolution 4.2 meV with smallest slits and a pass energy of 8 eV). The large angular filling of the entrance lens and hemisphere (225 mm path radius) allows k-field-of-view diameters > 6 angstroms^-1. Energy filtered X-PEEM mode using synchrotron radiation revealed a resolution of 300 nm. As examples we show 2D band mapping of bilayer graphene, 3D mapping of the Fermi surface of Cu, CD-ARPES for intercalated indenene layers and the sp valence bands of Cu and Au, and full-field photoelectron diffraction patterns of Ge.

cond-mat.mtrl-sci↗

Momentum-space Observation of Optically Excited Non-Thermal Electrons in Graphene with Persistent Pseudospin Polarization

The unique optical properties of graphene, with broadband absorption and ultrafast response, make it a critical component of optoelectronic and spintronic devices. Using time-resolved momentum microscopy with high data rate and high dynamic range, we report momentum-space measurements of electrons promoted to the graphene conduction band with visible light, and their subsequent relaxation. We observe a pronounced non-thermal distribution of nascent photoexcited electrons with lattice pseudospin polarization in remarkable agreement with results of simple tight-binding theory. By varying the excitation fluence, we vary the relative importance of electron-electron vs. electron-phonon scattering in the relaxation of the initial distribution. Increasing the excitation fluence results in increased noncollinear electron-electron scattering and reduced pseudospin polarization, although up-scattered electrons retain a degree of polarization. These detailed momentum-resolved electron dynamics in graphene demonstrate the capabilities of high-performance time-resolved momentum microscopy in the study of 2D materials and can inform the design of graphene devices.

cond-mat.mes-hall↗

Real-time observation of phonon-electron energy and angular momentum flow in laser-heated nickel

Identifying the microscopic nature of non-equilibrium energy transfer mechanisms among electronic, spin and lattice degrees of freedom is central for understanding ultrafast phenomena such as manipulating magnetism on the femtosecond timescale. Here we use time and angle-resolved photoemission spectroscopy to go beyond the often-employed ensemble-averaged view of non-equilibrium dynamics in terms of quasiparticle temperature evolutions. We show for ferromagnetic Ni that the non-equilibrium electron and spin dynamics display pronounced variations with electron momentum whereas the magnetic exchange interaction remains isotropic. This highlights the influence of lattice-mediated scattering processes and opens a pathway towards unraveling the still elusive microscopic mechanism of spin-lattice angular momentum transfer.

cond-mat.mtrl-sci↗

Active Sites of Te-hyperdoped Silicon by Hard X-ray Photoelectron Spectroscopy

Multiple dopant configurations of Te impurities in close vicinity in silicon are investigated using photoelectron spectroscopy, photoelectron diffraction, and Bloch wave calculations. The samples are prepared by ion implantation followed by pulsed laser annealing. The dopant concentration is variable and high above the solubility limit of Te in silicon. The configurations in question are distinguished from isolated Te impurities by a strong chemical core level shift. While Te clusters are found to form only in very small concentrations, multi-Te configurations of type dimer or up to four Te ions surrounding a vacancy are clearly identified. For these configurations a substitutional site location of Te is found to match the data best in all cases. For isolated Te ions this matches the expectations. For multi-Te configurations the results contribute to understanding the exceptional activation of free charge carriers in hyperdoping of chalcogens in silicon.

cond-mat.mtrl-sci↗

Hard x-ray angle-resolved photoemission from a buried high-mobility electron system

Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by pulsed laser deposition of a disordered LaAlO$_3$ film. The momentum-resolved electronic structure of the buried electron system is mapped out by hard x-ray angle-resolved photoelectron spectroscopy. From a comparison to calculations it is found that the band structure deviates from that of electron-doped bulk KTaO$_3$ due to the confinement to the interface. Nevertheless, the Fermi surface appears to be clearly three-dimensional. From the $k$ broadening of the Fermi surface and core-level depth profiling we estimate the extension of the electron system to be at least 1 nm but not much larger than 2 nm, respectively.

cond-mat.str-el↗

Clamping effect on temperature-induced valence transition in epitaxial EuPd$_2$Si$_2$ thin films grown on MgO(001)

Bulk EuPd$_2$Si$_2$ show a temperature-driven valence transisition of europium from $\sim$+2 above 200 K to $\sim$+3 below 100 K, which is correlated with a shrinking by approximatly 2 % of the crystal lattice along the two a-axes. Due to this interconnection between lattice and electronic degrees of freedom the influence of strain in epitaxial thin films is particularly interesting. Ambient X-ray diffraction (XRD) confirms an epitaxial relationship of tetragonal EuPd$_2$Si$_2$ on MgO(001) with an out-of plane c-axis orientation for the thin film, whereby the a-axes of both lattices align. XRD at low temperatures reveals a strong coupling of the thin film lattice to the substrate, showing no abrupt compression over the temperature range from 300 to 10 K. Hard X-ray photoelectron spectroscopy at 300 and 20 K reveals a temperature-independent valence of +2.0 for Eu. The evolving biaxial tensile strain upon cooling is suggested to suppress the valence transition. Instead low temperature transport measurements of the resistivity and the Hall effect in a magnetic field up to 5 T point to a film thickness independent phase transition at 16-20 K, indicating magnetic ordering.

cond-mat.mtrl-sci↗

Momentum-Resolved Exciton Coupling and Valley Polarization Dynamics in Monolayer WS$_2$

Coupling between exciton states across the Brillouin zone in monolayer transition metal dichalcogenides can lead to ultrafast valley depolarization. Using time- and angle-resolved photoemission, we present momentum- and energy-resolved measurements of exciton coupling in monolayer WS$_2$. By comparing full 4D ($k_x, k_y, E, t$) data sets after both linearly and circularly polarized excitation, we are able to disentangle intervalley and intravalley exciton coupling dynamics. Recording in the exciton binding energy basis instead of excitation energy, we observe strong mixing between the B$_{1s}$ exciton and A$_{n>1}$ states. The photoelectron energy and momentum distributions observed from excitons populated via intervalley coupling (e.g. K$^-$ $\rightarrow$ K$^+$) indicate that the dominant valley depolarization mechanism conserves the exciton binding energy and center-of-mass momentum, consistent with intervalley Coulomb exchange. On longer timescales, exciton relaxation is accompanied by contraction of the momentum space distribution.

cond-mat.mtrl-sci↗

Structure Analysis using Time-of-Flight Momentum Microscopy with Hard X-rays: Status and Prospects

X-ray photoelectron diffraction (XPD) has developed into a powerful technique for the structural analysis of solids. Extension of the technique into the hard-X-ray range (hXPD) gives access to true bulk information. Here we give a status report on hXPD experiments using a novel full-field imaging technique: Time-of-flight momentum microscopy (ToF-MM). A special variant of ToF-MM is capable of recording high kinetic energies (up to >7keV) and enlarged k-fields-of-view. We present applications that are specific for high kinetic energies. The strong site specificity of hXPD is exemplified for NbSe2, the cubic-to-tetragonal transition in SrTiO3 and the zinc-blende structure in epitaxial GaAs films. Bloch-wave calculations show a very good agreement with experiment and reveal fingerprint-like signatures of emitter sites in host lattices. We show a dopant-site analysis in two semiconductors (Mn in GaAs and Te in Si). Hard-X-ray ARPES plus core-level hXPD enable eliminating the strong diffraction signature imprinted in HARPES maps.

cond-mat.mtrl-sci↗

Spin- and time-resolved photoelectron spectroscopy and diffraction studies using time-of-flight momentum microscopes

Momentum microscopy (MM) is a novel way of performing angular-resolved photoelectron spectroscopy (ARPES). Combined with time-of-flight (ToF) energy recording, its high degree of parallelization is advantageous for photon-hungry experiments like ARPES at X-ray energies and spin-resolved ARPES. This article introduces into the spin-resolved variant of ToF-MM and illustrates its performance by selected examples obtained in different spectral ranges. In a multidimensional view of the photoemission process, spectral density function $ρ(k,E_B)$, spin polarization $P(k,E_B)$ and related quantities of circular dichroism in the angular distribution (CDAD) are part of the complete experiment, a concept adopted from atomic photoemission. We show examples of spin-resolved valence-band mapping in the UV, VUV, soft- and hard-X-ray range. Spin mapping of the Heusler compounds Co$_2$MnGa and Co$_2$Fe$_{0.4}$Mn$_{0.6}$Si at $hν=6$~eV prove that the second compound is a half-metallic ferromagnet. Analysis of the Tamm state on Re(0001) using VUV-excitation reveals a Rashba-type spin texture. Bulk band structure including Fermi surface, Fermi velocity distribution $v_F(k,E_F)$, full CDAD texture and spin signature of W(110) have been derived via tomographic mapping with soft X-rays. Hard X-rays enable accessing large k$_{par}$-regions so that the final-state sphere crosses many Brillouin zones in $k$-space with different $k_z$. At $hν=5.3$~keV this fast 4D mapping mode (at fixed $hν$) revealed the temperature dependence of the Fermi surface of the Kondo system YbRh$_2$Si$_2$. Probing the true bulk spin polarization of Fe$_3$O$_4$ at $hν=5$~keV proved its half-metallic nature. The emerging method of ToF-MM with fs X-ray pulses from a free-electron laser enables simultaneous valence, core-level and photoelectron diffraction measurements in the ultrafast regime.

cond-mat.mtrl-sci↗

Ultrafast electronic line width broadening in the C 1s core level of graphene

Core level binding energies and absorption edges are at the heart of many experimental techniques concerned with element-specific structure, electronic structure, chemical reactivity, elementary excitations and magnetism. X-ray photoemission spectroscopy (XPS) in particular, can provide information about the electronic and vibrational many-body interactions in a solid as these are reflected in the detailed energy distribution of the photoelectrons. Ultrafast pump-probe techniques add a new dimension to such studies, introducing the ability to probe a transient state of the many-body system. Here we use a free electron laser to investigate the effect of a transiently excited electron gas on the core level spectrum of graphene, showing that it leads to a large broadening of the C 1s peak. Confirming a decade-old prediction, the broadening is found to be caused by an exchange of energy and momentum between the photoemitted core electron and the hot electron system, rather than by vibrational excitations. This interpretation is supported by a line shape analysis that accounts for the presence of the excited electrons. Fitting the spectra to this model directly yields the electronic temperature of the system, in agreement with electronic temperature values obtained from valence band data. Furthermore, making use of time- and momentum-resolved C 1s spectra, we illustrate how the momentum change of the outgoing core electrons leads to a small but detectable change in the time-resolved photoelectron diffraction pattern and to a nearly complete elimination of the core level binding energy variation associated with the narrow $σ$-band in the C 1s state. The results demonstrate that the XPS line shape can be used as an element-specific and local probe of the excited electron system and that X-ray photoelectron diffraction investigations remain feasible at very high electronic temperatures.

cond-mat.str-el↗

Subpicosecond metamagnetic phase transition driven by non-equilibrium electron dynamics

Femtosecond light-induced phase transitions between different macroscopic orders provide the possibility to tune the functional properties of condensed matter on ultrafast timescales. In first-order phase transitions, transient non-equilibrium phases and inherent phase coexistence often preclude non-ambiguous detection of transition precursors and their temporal onset. Here, we present a study combining time-resolved photoelectron spectroscopy and ab-initio electron dynamics calculations elucidating the transient subpicosecond processes governing the photoinduced generation of ferromagnetic order in antiferromagnetic FeRh. The transient photoemission spectra are accounted for by assuming that not only the occupation of electronic states is modified during the photoexcitation process. Instead, the photo-generated non-thermal distribution of electrons modifies the electronic band structure. The ferromagnetic phase of FeRh, characterized by a minority band near the Fermi energy, is established 350+- 30 fs after the laser excitation. Ab-initio calculations indicate that the phase transition is initiated by a photoinduced Rh-to-Fe charge transfer.

cond-mat.str-el↗