arXiv subjects

Gergely Dobrik

Publications and source records attributed to Gergely Dobrik.

10 recordsLinked to original sources

arXiv2026

Enrichment of rhombohedral stacking by mechanical exfoliation of graphite

Rhombohedral (ABC) graphite hosts a surface-localized flat band that supports correlated and topological electronic phases, but its experimental study is limited by the scarcity of ABC stacking in natural graphite, which is dominated by Bernal (AB) stacking. Here we show that the routine mechanical exfoliation step itself enriches the rhombohedral content of graphite flakes, and that a simple blade-assisted exfoliation step, which introduces additional shear, amplifies the effect further. Using large-area Raman 2D-band skewness mapping we measure ABC content at area fractions of 3\% in the pristine source crystal, 16\% after conventional exfoliation, and 26\% after blade-assisted exfoliation for thick flakes. In thin flakes ($<20$ layers) the per-flake area fraction reaches 75\% in the upper tail of the distribution. Tracking individual flakes before and after blade-assisted exfoliation shows that wrinkles seed AB-ABC domain walls, and uniaxial strain can move these walls. Blade-assisted mechanical exfoliation therefore removes one of the bottlenecks to the preparation of ABC-rich graphite samples for studies of correlated and topological phases in rhombohedral graphite.

cond-mat.mtrl-sci↗

arXiv2022

Large-area nanoengineering of graphene corrugations for visible-frequency graphene plasmons

Quantum confinement of graphene carriers is an effective way to engineer its properties. It is commonly realized through physical edges that are associated with the deterioration of mobility and strong suppression of plasmon resonances. Here, we demonstrate a simple, large-area, edge-free nanostructuring technique, based on amplifying random nanoscale structural corrugations to a level where they efficiently confine carriers, without inducing significant inter-valley scattering. This soft confinement, allows the low-loss lateral ultra-confinement of graphene plasmons, scaling up their resonance frequency from native terahertz to commercially relevant visible range. Visible graphene plasmons localized into nanocorrugations mediate several orders of magnitude stronger light-matter interactions (Raman enhancement) than those previously achieved with graphene, enabling the detection of specific molecules from femtomolar solutions or ambient air. Moreover, nanocorrugated graphene sheets also support propagating visible plasmon modes revealed by scanning near-field optical microscopy observation of their interference patterns.

cond-mat.mes-hall↗

arXiv2020

Robust quantum point contact operation of narrow graphene constrictions patterned by AFM cleavage lithography

Detecting conductance quantization in graphene nanostructures turned out more challenging than expected. The observation of well-defined conductance plateaus through graphene nanoconstrictions so far has only been accessible in the highest quality suspended or h-BN encapsulated devices. However, reaching low conductance quanta in zero magnetic field, is a delicate task even with such ultra-high mobility devices. Here, we demonstrate a simple AFM-based nanopatterning technique for defining graphene constrictions with high precision (down to 10 nm width) and reduced edge-roughness (+/- 1 nm). The patterning process is based on the in-plane mechanical cleavage of graphene by the AFM tip, along its high symmetry crystallographic directions. As-defined, narrow graphene constrictions with improved edge quality enable an unprecedentedly robust QPC operation, allowing the observation of conductance quantization even on standard $SiO_2/Si$ substrates, down to low conductance quanta. Conductance plateaus, were observed at $ne^2/h$, evenly spaced by $2e^2/h$ (corresponding to n = 3, 5, 7, 9, 11) in the absence of an external magnetic field, while spaced by $e^2/h$ (n = 1, 2, 3, 4, 5, 6) in 8T magnetic field.

cond-mat.mes-hall↗

arXiv2020

Ultra-flat twisted superlattices in 2D heterostructures

Moiré-superlattices are ubiquitous in 2D heterostructures, strongly influencing their electronic properties. They give rise to new Dirac cones and are also at the origin of the superconductivity observed in magic-angle bilayer graphene. The modulation amplitude (corrugation) is an important yet largely unexplored parameter in defining the properties of 2D superlattices. The generally accepted view is that the corrugation monotonically decreases with increasing twist angle, while its effects on the electronic structure diminish as the layers become progressively decoupled. Here we found by lattice relaxation of around 8000 different Moiré-superstructures using high scale Classical Molecular Simulations combined with analytical calculations, that even a small amount of strain can substantially change this picture, giving rise to more complex behavior of superlattice corrugation as a function of twist angle. One of the most surprising findings is the emergence of an ultra-flat phase that can be present for arbitrary small twist angle having a much lower corrugation level than the decoupled phase at large angles. A possible experimental realization of the ultra-flat state is revealed by Scanning Tunneling Microscopy (STM) investigations of the graphene/graphite system.

cond-mat.mes-hall↗

arXiv2019

Spontaneous doping of the basal plane of MoS2 single-layers through oxygen substitution under ambient conditions

The chemical inertness of the defect-free basal plane confers environmental stability to MoS2 single-layers, but it also limits their chemical versatility and catalytic activity. The stability of the pristine MoS2 basal plane against oxidation under ambient conditions is a widely accepted assumption in the interpretation of various studies and applications. However, single-atom level structural investigations reported here reveal that oxygen atoms spontaneously incorporate into the basal plane of MoS2 single layers during ambient exposure. Our scanning tunneling microscopy investigations reveal a slow oxygen substitution reaction, upon which individual sulfur atoms are one by one replaced by oxygen, giving rise to solid solution type 2D MoS2-xOx crystals. O substitution sites present all over the basal plane act as single-atomic active reaction centers, substantially increasing the catalytic activity of the entire MoS2 basal plane for the electrochemical H2 evolution reaction.

cond-mat.mes-hall↗

arXiv2019

Large intravalley scattering due to pseudo-magnetic fields in crumpled graphene

The pseudo-magnetic field generated by mechanical strain in graphene can have dramatic consequences on the behavior of electrons and holes. Here we show that pseudo-magnetic field fluctuations present in crumpled graphene can induce significant intravalley scattering of charge carriers. We detect this by measuring the confocal Raman spectra of crumpled areas, where we observe an increase of the D'/D peak intensity ratio by up to a factor of 300. We reproduce our observations by numerical calculation of the double resonant Raman spectra and interpret the results as experimental evidence of the phase shift suffered by Dirac charge carriers in the presence of a pseudo-magnetic field. This lifts the restriction on complete intravalley backscattering of Dirac fermions.

cond-mat.mes-hall↗

arXiv2017

Highly wear-resistant and low-friction Si3N4 composites by addition of graphene nanoplatelets approaching the 2D limit

Graphene nanoplatelets (GNPs) have emerged as one of the most promising filler materials for improving the tribological performance of ceramic composites due to their outstanding solid lubricant properties as well as mechanical and thermal stability. Yet, the addition of GNPs has so far provided only a very limited improvement in the tribological properties of ceramics, particularly concerning the reduction of their friction coefficient. This is most likely due to the challenges of achieving a lubricating and protecting tribo-film through a high GNP coverage of the exposed surfaces. Here we show that this can be achieved by efficiently increasing the exfoliation degree of GNPs down to the few-layer (FL) range. By employing FL-GNPs as filler material, the wear resistance of Si3N4 composites can be increased by about twenty times, the friction coefficient reduced to nearly its half, while the other mechanical properties are also preserved or improved. Using confocal Raman microscopy, we were able to demonstrate the formation of a continuous FL- GNP tribo-film, already at 5wt% FL-GNP content.

cond-mat.mtrl-sci↗

arXiv2011

Revealing the grain structure of graphene grown by chemical vapor deposition

The physical processes occurring in the presence of disorder: point defects, grain boundaries, etc. may have detrimental effects on the electronic properties of graphene. Here we present an approach to reveal the grain structure of graphene by the selective oxidation of defects and subsequent atomic force microscopy analysis. This technique offers a quick and easy alternative to different electron microscopy and diffraction methods and may be used to give quick feedback on the quality of graphene samples grown by chemical vapor deposition.

cond-mat.mes-hall↗

arXiv2009

Tuning the electronic structure of graphene by ion irradiation

Mechanically exfoliated graphene layers deposited on SiO2 substrate were irradiated with Ar+ ions in order to experimentally study the effect of atomic scale defects and disorder on the low-energy electronic structure of graphene. The irradiated samples were investigated by scanning tunneling microscopy and spectroscopy measurements, which reveal that defect sites, besides acting as scattering centers for electrons through local modification of the on-site potential, also induce disorder in the hopping amplitudes. The most important consequence of the induced disorder is the substantial reduction in the Fermi velocity, revealed by bias-dependent imaging of electron-density oscillations observed near defect sites.

cond-mat.mes-hall↗

arXiv2008

Tailoring the atomic structure of graphene nanoribbons by STM lithography

The practical realization of nano-scale electronics faces two major challenges: the precise engineering of the building blocks and their assembly into functional circuits. In spite of the exceptional electronic properties of carbon nanotubes only basic demonstration-devices have been realized by time-consuming processes. This is mainly due to the lack of selective growth and reliable assembly processes for nanotubes. However, graphene offers an attractive alternative. Here we report the patterning of graphene nanoribbons (GNRs) and bent junctions with nanometer precision, well-defined widths and predetermined crystallographic orientations allowing us to fully engineer their electronic structure using scanning tunneling microscope (STM) lithography. The atomic structure and electronic properties of the ribbons have been investigated by STM and tunneling spectroscopy measurements. Opening of confinement gaps up to 0.5 eV, allowing room temperature operation of GNR-based devices, is reported. This method avoids the difficulties of assembling nano-scale components and allows the realization of complete integrated circuits, operating as room temperature ballistic electronic devices.

cond-mat.mes-hall↗