The impact of experimental conditions on the observation of channeling and crystalline undulator radiation
In this study, we present a comprehensive quantitative analysis of the radiation emitted by 855 MeV electrons propagating through an oriented diamond hetero-crystal. The crystal consists of two distinct segments: (i) a straight single-crystal diamond substrate, and (ii) a diamond layer that is periodically doped with boron atoms. The doping profiles were derived from precise experimental measurements of boron concentration obtained during the layer fabrication via Microwave Plasma Chemical Vapor Deposition (MPCVD). Our study systematically investigates the channelling and the crystalline undulator radiation, accounting for the different doping profiles in the undulating region. The simulations were conducted using the advanced MBNExplorer software package, which enables detailed modeling of particle trajectories and radiation emission. We report on good agreement with experiment and discuss remaining discrepancies providing possible explanations for them. The results obtained show that the radiation intensity is significantly affected by a range of factors, including the angular divergence of the incident beam, its orientation with respect to the target, the direction in which the emitted radiation is detected, and the choice of the doping profiles. These findings are important for optimising the design of crystalline undulators as novel gamma radiation light sources.