arXiv subjects

Geun Ho Ahn

Publications and source records attributed to Geun Ho Ahn.

At least 19 recordsLinked to original sources

arXiv2026

Practical Limits on Integrated Squeezers

Recent experiments have demonstrated the successful generation and detection of moderately squeezed vacuum states with integrated photonics. However, in order to benefit from the reduced noise of highly squeezed light, many different noise sources must be mitigated. Here, we quantify the fundamental limits these noise sources impose on squeezing measurements and find surprising generality across different platforms and designs. We combine these different limitations into a simple model that provides practical guidance for the design and benchmarking of next-generation integrated squeezed-light systems.

quant-ph↗

arXiv2026

Ultra-wideband electrically-tuned mid-infrared on-chip parametric oscillator

Developing compact, broadband mid-infrared coherent sources for applications in spectroscopy and sensing remains a pressing challenge in photonics. However, material limitations and integration constraints have restricted the accessible wavelengths and operation bandwidths of current mid-infrared lasers. Here, we address these challenges by developing a nonlinear integrated photonic device that converts a fixed-wavelength near-infrared pump laser into broadly tunable mid-infrared light. Our device, an optical parametric oscillator (OPO) integrated on thin-film lithium niobate, generates 22 THz of multi-milliwatt, voltage-tunable radiation from 2.7-3.4 microns, a region typically difficult to access but vital for environmental, chemical, and biological sensing. By introducing an on-chip-tunable OPO architecture taking advantage of the Vernier effect, we obtain electrical control of the emission wavelengths from coarse, multi-THz scales down to continuous, sub-100-GHz mode-hop-free tuning ranges. This work establishes a robust platform for a new class of compact, widely tunable mid-infrared sources with potential for future scaling.

physics.optics↗

arXiv2026

Ultrabroadband Passive Laser Noise Suppression to Quantum Noise Limit through on-chip Second Harmonic Generation

Laser intensity noise limits performance in quantum sensing, metrology, and computing. Existing stabilization methods face a trade-off between bandwidth and complexity: electronic feedback loops are speed-limited, while optical resonators are constrained by narrow linewidths and locking requirements. Here, we demonstrate an all-optical "noise eater" that passively suppresses intensity fluctuations from DC to >10 gigahertz. By leveraging high-efficiency second-harmonic generation in nanophotonic lithium niobate waveguides, we operate at a pump-depletion stationary point where input fluctuations are decoupled from the output to first order. This passive and nonresonant nanophotonic device suppresses relative intensity noise by 25 to 60 dB over the full measurement bandwidth and stabilizes a noisy fiber amplifier output to the shot-noise limit. Our results establish a scalable, wide-bandwidth paradigm for laser stabilization essential for high-throughput quantum technologies and deployable photonic sensing systems.

physics.optics↗

arXiv2026

High-Performance Wavelength Division Multiplexers Enabled by Co-Optimized Inverse Design

Wavelength division multiplexers are fundamental to the functioning and performance of integrated photonic circuits, with applications ranging from optical interconnects to sensing and quantum technologies. Current solutions are limited by trade-offs between channel spacing, crosstalk, insertion loss, and device footprint. Here, we develop a novel design approach that co-optimizes inverse-designed wavelength division multiplexers and distributed Bragg gratings to achieve ultra-low crosstalk without compromising insertion loss. We experimentally demonstrate less than -40 dB crosstalk for wavelength channel spacing of 15 nm in foundry-compatible silicon and silicon nitride devices across the telecommunications C- and L-bands. Our design process is highly adaptable, allowing for seamless scaling to a greater number of output channels, different spectral windows, and easy translation across various material platforms.

physics.optics↗

arXiv2026

Inverse design for scalable photonic systems

Over the past two decades, photonic inverse design has emerged as a powerful approach to implement photonic devices with improved performance, or realize new functionalities. While the efforts over the first decade focused on proof of concept devices designed and fabricated in university labs, the focus over the past 5-10 years has shifted towards implementation of scalable photonic systems. This article reviews this recent progress, challenges and new directions in photonics inverse design, thus providing a complementary and updated review of the field. We focus on large scale three dimensional photonic inverse design, including metasurfaces, translation of inverse design to commercial foundries and practical silicon photonics, application of photonic inverse design to different materials systems, wavelengths, and optical effects, and finally new directions such as inverse design of quantum systems.

physics.optics↗

arXiv2026

Single-Chip 1.024 Tb/s Optical Receiver for High-Speed Optical links

Integrated optical transceivers, utilizing wavelength-division-multiplexing, offer a path forward for implementation of compact, high-bandwidth and energy-efficient interconnects for future data centers. Here we report the demonstration of a monolithically integrated optical receiver in 45nm CMOS, where efficient multi-layer optical demultiplexing with capacitive tuning, energy efficient electronics and wideband inverse designed grating couplers enable implementation of a 32-channel receiver chip based on wavelength-division multiplexing. The chip operates at an aggregate data-rate of 1.024 Tb/s with all channels operating simultaneously at a data-rate of 32 Gb/s/channel achieving a record energy efficiency of 71 fJ/b, including the power consumption of both the electronic circuitry and the tuning and control of photonic devices, and a record bandwidth density of 4 Tb/s/mm2. The receiver achieves a bit-error-rate below 1E-12 without requiring equalization, error correction or digital processing. Inverse-designed broadband grating couplers provide efficient, low-loss optical coupling into the chip. An on-chip demultiplexer, composed of Mach-Zehnder interferometers (MZIs) and ring resonators, offers a large channel-to-channel isolation sufficient for error-free operation. Capacitive phase shifters embedded within the ring resonators of the demultiplexer are used for wavelength alignment at a zero static power consumption. MZIs and ring-resonators are periodically selected and autonomously locked to the wavelength of the corresponding optical carrier. The implemented monolithic receiver offers a scalable, energy-efficient and reliable solution for the beyond Tb/s optical interconnects.

physics.optics↗

arXiv2025

Single chip 1 Tb/s optical transmitter with inverse designed input and output couplers

Optical interconnects are essential for data centers and AI systems. Given the limited energy production, ultra-low energy and dense optical interconnects are required to support the exponential growth of AI systems. Here we report the demonstration of a monolithically integrated optical transmitter where use of power efficient architecture and devices such as capacitive tuning of optical structures at zero static power consumption and efficient and wideband inverse designed grating couplers enable implementation of a 32-channel transmitter chip based on wavelength-division multiplexing achieving a record modulation energy efficiency of 32 fJ/b at 5 Gb/s/channel and 106 fJ/b at 32 Gb/s/channel, which includes the tuning of optical devices. Furthermore, a bit-error-rate of 1E-12 was achieved, while all channels are simultaneously operating with an aggregate data-rate of 1.024 Tb/s. The system utilizes 16 carrier wavelengths in the optical C band. The pseudo-random-bit-streams are electrically generated on-chip and used to drive individually wavelength-stabilized 2-section p-n-capacitive micro-ring modulators using integrated energy-efficient high-swing electrical drivers. The low-loss inverse designed grating couplers have -1-dB bandwidth of 25 nm. The chip concurrently achieves the highest aggregate data-rate, the highest energy efficiency and the highest bandwidth density for a multi-channel high date-rate optical transmitter chip reported to date.

physics.optics↗

arXiv2025

A systolic update scheme to overcome memory bandwidth limitations in GPU-accelerated FDTD simulations

The exponential growth of artificial intelligence has fueled the development of high-bandwidth photonic interconnect fabrics as a critical component of modern AI supercomputers. As the demand for ever-increasing AI compute and connectivity continues to grow, the need for high-throughput photonic simulation engines to accelerate and even revolutionize photonic design and verification workflows will become an increasingly indispensable capability for the integrated photonics industry. Unfortunately, the mainstay and workhorse of photonic simulation algorithms, the finite-difference time-domain (FDTD) method, because it is a memory-intensive but computationally-lightweight algorithm, is fundamentally misaligned with modern computational platforms which are equipped to deal with compute intensive workloads instead. This paper introduces a systolic update scheme for the FDTD method, which circumvents this mismatch by reducing the need for global synchronization while also relegating the need to access global memory to the case of boundary values between neighboring subdomains only. We demonstrate a practical implementation of our scheme as applied to the full three-dimensional FDTD algorithm that achieves a performance of roughly 0.15 trillion cell updates per second (TCUPS) on a single Nvidia H100 GPU. Our work paves the way for the increasingly efficient, cost-effective, and high-throughput photonic simulation engines needed to continue powering the AI era.

physics.optics↗

arXiv2025

Quantum critical electro-optic and piezo-electric nonlinearities

Electro-optics, the tuning of optical properties of materials with electric fields, is key to a multitude of quantum and classical photonics applications. However, a major obstacle preventing many emerging use cases is inefficient modulation in cryogenic environments, as traditional tuning mechanisms degrade at low temperatures. Guided by the connection between phase transitions and nonlinearity, we identify the quantum paraelectric perovskite SrTiO$_3$ (STO) as the strongest cryogenic electro-optic photonic material. As a result of the unique quantum paraelectric phase of STO, we demonstrate a dynamically tunable linear Pockels coefficient ($r_{33}$) exceeding 500 pm/V at $T=5$ K, and study its full temperature and bias dependence. We also measure an enhanced piezo-electric coefficient ($d_{33}$) above 90 pC/N. Both of these coefficients exceed all previously reported values for cryogenic materials, including lithium niobate ($r_{33}\approx24$ pm/V) and barium titanate ($r_{42}\approx170$ pm/V). Furthermore, by tuning STO towards \textit{quantum criticality} with oxygen isotope substitution we more than double the optical and piezo-electric nonlinearities, demonstrating a linear Pockels coefficient above 1100 pm/V. Our results probe the link between quantum phase transitions, dielectric susceptibility, and optical nonlinearities, unlocking opportunities in cryogenic optical and mechanical systems, and provide a framework for discovering new nonlinear materials.

cond-mat.mtrl-sci↗

arXiv2024

Unified laser stabilization and isolation on a silicon chip

Rapid progress in photonics has led to an explosion of integrated devices that promise to deliver the same performance as table-top technology at the nanoscale; heralding the next generation of optical communications, sensing and metrology, and quantum technologies. However, the challenge of co-integrating the multiple components of high-performance laser systems has left application of these nanoscale devices thwarted by bulky laser sources that are orders of magnitude larger than the devices themselves. Here we show that the two main ingredients for high-performance lasers -- noise reduction and isolation -- currently requiring serial combination of incompatible technologies, can be sourced simultaneously from a single, passive, CMOS-compatible nanophotonic device. To do this, we take advantage of both the long photon lifetime and the nonreciprocal Kerr nonlinearity of a high quality factor silicon nitride ring resonator to self-injection lock a semiconductor laser chip while also providing isolation. Additionally, we identify a previously unappreciated power regime limitation of current on-chip laser architectures which our system overcomes. Using our device, which we term a unified laser stabilizer, we demonstrate an on-chip integrated laser system with built-in isolation and noise reduction that operates with turnkey reliability. This approach departs from efforts to directly miniaturize and integrate traditional laser system components and serves to bridge the gap to fully integrated optical technologies.

physics.optics↗

arXiv2023

Titanium:Sapphire-on-insulator for broadband tunable lasers and high-power amplifiers on chip

Titanium:Sapphire (Ti:Sa) lasers have been essential for advancing fundamental research and technological applications. Ti:Sa lasers are unmatched in bandwidth and tuning range, yet their use is severely restricted due to their large size, cost, and need for high optical pump powers. Here, we demonstrate a monocrystalline Ti:Sa-on-insulator (Ti:SaOI) photonics platform which enables dramatic miniaturization, cost-reduction, and scalability of Ti:Sa technology. First, through fabrication of low-loss whispering gallery mode resonators, we realize a Ti:Sa laser operating with an ultra-low lasing threshold of 290 $μ$W. Then, through orders-of-magnitude improvement in mode confinement in Ti:SaOI waveguides, we realize the first integrated solid-state (i.e., non-semiconductor) optical amplifier operating below 1 $μ$m, with an ultra-wide bandwidth of 700 - 950 nm and peak gain of 64 dB/cm. We demonstrate unprecedented 17 dB distortion-free amplification of picosecond pulses to up to 2.3 nJ pulse energy, corresponding to a peak power of 1.0 kW. Finally, we demonstrate the first tunable integrated Ti:Sa laser, featuring narrow linewidths and a 24.7 THz tuning range, which, for the first time, can be pumped with low-cost, miniature, off-the-shelf green laser diodes. This opens doors to new modalities of Ti:Sa lasers (now occupying a footprint less than 0.15 mm$^2$), such as massively-scalable Ti:Sa laser array systems for a variety of applications. As a proof-of-concept demonstration, we employ a Ti:SaOI laser array as the sole optical control for a cavity quantum electrodynamics experiment with artificial atoms in silicon carbide. This work is a key step towards the democratization of Ti:Sa technology through a three orders-of-magnitude reduction in cost and footprint, as well as the introduction of solid-state broadband amplification of sub-micron wavelength light.

physics.optics↗

arXiv2023

Microwave Spin Control of a Tin-Vacancy Qubit in Diamond

The negatively charged tin-vacancy (SnV-) center in diamond is a promising solid-state qubit for applications in quantum networking due to its high quantum efficiency, strong zero phonon emission, and reduced sensitivity to electrical noise. The SnV- has a large spin-orbit coupling, which allows for long spin lifetimes at elevated temperatures, but unfortunately suppresses the magnetic dipole transitions desired for quantum control. Here, by use of a naturally strained center, we overcome this limitation and achieve high-fidelity microwave spin control. We demonstrate a pi-pulse fidelity of up to 99.51+/0.03%$ and a Hahn-echo coherence time of T2echo = 170.0+/-2.8 microseconds, both the highest yet reported for SnV- platform. This performance comes without compromise to optical stability, and is demonstrated at 1.7 Kelvin where ample cooling power is available to mitigate drive induced heating. These results pave the way for SnV- spins to be used as a building block for future quantum technologies.

quant-ph↗

arXiv2023

An inverse-designed nanophotonic interface for excitons in atomically thin materials

Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into photonic structures, but this integration is often limited by size and material quality. Here, we use hexagonal boron nitride (hBN), a benchmark choice for encapsulating atomically thin materials, as a waveguiding layer while simultaneously improving the optical quality of the embedded films. When combined with photonic inverse design, it becomes a complete nanophotonic platform to interface with optically active 2D materials. Grating couplers and low-loss waveguides provide optical interfacing and routing, tunable cavities provide a large exciton-photon coupling to transition metal dichalcogenides (TMD) monolayers through Purcell enhancement, and metasurfaces enable the efficient detection of TMD dark excitons. This work paves the way for advanced 2D-material nanophotonic structures for classical and quantum nonlinear optics.

physics.optics↗

arXiv2022

Platform-agnostic waveguide integration of high-speed photodetectors with evaporated tellurium thin films

Many attractive photonics platforms still lack integrated photodetectors due to inherent material incompatibilities and lack of process scalability, preventing their widespread deployment. Here we address the problem of scalably integrating photodetectors in a photonic platform-independent manner. Using a thermal evaporation and deposition technique developed for nanoelectronics, we show that tellurium (Te), a quasi-2D semi-conductive element, can be evaporated at low temperature directly onto photonic chips to form air-stable, high-responsivity, high-speed, ultrawide-band photodetectors. We demonstrate detection at visible, telecom, and mid-infrared wavelengths, a bandwidth of more than 40 GHz, and platform-independent scalable integration with photonic structures in silicon, silicon nitride and lithium niobate.

physics.optics↗

arXiv2022

Integrated Passive Nonlinear Optical Isolators

Fiber and bulk-optical isolators are widely used to stabilize laser cavities by preventing unwanted feedback. However, their integrated counterparts have been slow to be adopted. While several strategies for on-chip optical isolation have been realized, these rely on either integration of magneto-optic materials or high frequency modulation with acousto-optic or electro-optic modulators. Here, we demonstrate an integrated approach for passively isolating a continuous wave laser using the intrinsically non-reciprocal Kerr nonlinearity in ring resonators. Using silicon nitride as a model platform, we achieve single ring isolation of 17-23dB with 1.8-5.5dB insertion loss, and a cascaded ring isolation of 35dB with 5dB insertion loss. Employing these devices, we demonstrate hybrid integration and isolation with a semi-conductor laser chip.

physics.optics↗

arXiv2022

Gradient-Based Optimization of Optical Vortex Beam Emitters

Vortex beams are stable solutions of Maxwell's equations that carry phase singularities and orbital angular momentum, unique properties that give rise to many applications in the basic sciences, optical communications, and quantum technologies. Scalable integration and fabrication of vortex beam emitters will allow these applications to flourish and enable new applications not possible with traditional optics. Here we present a general framework to generate integrated vortex beam emitters using photonic inverse design. We experimentally demonstrate generation of vortex beams with angular momentum spanning -3$\hbar$ to 3$\hbar$. We show the generality of this design procedure by designing a vortex beam multiplexer capable of exciting a custom vortex beam fiber. Finally, we produce foundry-fabricated beam emitters with wide-bandwidths and high-efficiencies that take advantage of a multi-layer heterogeneous integration.

physics.optics↗

arXiv2021

Inverse-designed multi-dimensional silicon photonic transmitters

Modern microelectronic processors have migrated towards parallel computing architectures with many-core processors. However, such expansion comes with diminishing returns exacted by the high cost of data movement between individual processors. The use of optical interconnects has burgeoned as a promising technology that can address the limits of this data transfer. While recent pushes to enhance optical communication have focused on developing wavelength-division multiplexing technology, this approach will eventually saturate the usable bandwidth, and new dimensions of data transfer will be paramount to fulfill the ever-growing need for speed. Here we demonstrate an integrated intra- and inter-chip multi-dimensional communication scheme enabled by photonic inverse design. Using inverse-designed mode-division multiplexers, we combine wavelength- and mode- multiplexing and send massively parallel data through nano-photonic waveguides and optical fibres. Crucially, as we take advantage of an orthogonal optical basis, our approach is inherently scalable to a multiplicative enhancement over the current state of the art.

physics.app-ph↗

arXiv2021

Augmenting On-Chip Microresonator through Photonic Inverse Design

Recent advances in the design and fabrication of on-chip optical microresonators has greatly expanded their applications in photonics, enabling metrology, communications, and on-chip lasers. Designs for these applications require fine control of dispersion, bandwidth and high optical quality factors. Co-engineering these figures of merit remains a significant technological challenge due to design strategies being largely limited to analytical tuning of cross-sectional geometry. Here, we show that photonic inverse-design facilitates and expands the functionality of on-chip microresonators; theoretically and experimentally demonstrating flexible dispersion engineering, quality factor beyond 2 million on the silicon-on-insulator platform with single mode operation, and selective wavelength-band operation.

physics.optics↗