arXiv subjects

Gianaurelio Cuniberti

Publications and source records attributed to Gianaurelio Cuniberti.

At least 73 records · Page 4Linked to original sources

arXiv2012

Disorder and dephasing effect on electron transport through conjugated molecular wires in molecular junctions

Understanding electron transport processes in molecular wires connected between contacts is a central focus in the field of molecular electronics. Especially, the dephasing effect causing tunneling-to-hopping transition has great importance from both applicational and fundamental points of view. We analyzed coherent and incoherent electron transmission through conjugated molecular wires by means of density-functional tight-binding theory within the D'Amato-Pastawski model. Our approach can study explicitly the structure/transport relationship in molecular junctions in a dephasing environmental condition using only single dephasing parameter. We investigated the length dependence and the influence of thermal fluctuations on transport and reproduced the well-known tunneling-to-hopping transition. This approach will be a powerful tool for the interpretation of recent conductance measurements of molecular wires.

cond-mat.mes-hall↗

arXiv2012

Nanoscale ear drum: Graphene based nanoscale sensors

The difficulty in determining the mass of a sample increases as its size diminishes. At the nanoscale, there are no direct methods for resolving the mass of single molecules or nanoparticles and so more sophisticated approaches based on electromechanical phenomena are required. More importantly, one demands that such nanoelectromechanical techniques could provide not only information about the mass of the target molecules but also about their geometrical properties. In this sense, we report a theoretical study that illustrates in detail how graphene membranes can operate as nanoelectromechanical mass-sensor devices. Wide graphene sheets were exposed to different types and amounts of molecules and molecular dynamic simulations were employed to treat these doping processes statistically. We demonstrate that the mass variation effect and information about the graphene-molecule interactions can be inferred through dynamical response functions. Our results confirm the potential use of graphene as mass detector devices with remarkable precision in estimating variations in mass at molecular scale and other physical properties of the dopants.

cond-mat.mtrl-sci↗

arXiv2011

Dynamical bi-stability of single-molecule junctions: A combined experimental/theoretical study of PTCDA on Ag(111)

The dynamics of a molecular junction consisting of a PTCDA molecule between the tip of a scanning tunneling microscope and a Ag(111) surface have been investigated experimentally and theoretically. Repeated switching of a PTCDA molecule between two conductance states is studied by low-temperature scanning tunneling microscopy for the first time, and is found to be dependent on the tip-substrate distance and the applied bias. Using a minimal model Hamiltonian approach combined with density-functional calculations, the switching is shown to be related to the scattering of electrons tunneling through the junction, which progressively excite the relevant chemical bond. Depending on the direction in which the molecule switches, different molecular orbitals are shown to dominate the transport and thus the vibrational heating process. This in turn can dramatically affect the switching rate, leading to non-monotonic behavior with respect to bias under certain conditions. In this work, rather than simply assuming a constant density of states as in previous works, it was modeled by Lorentzians. This allows for the successful description of this non-monotonic behavior of the switching rate, thus demonstrating the importance of modeling the density of states realistically.

cond-mat.mes-hall↗

arXiv2011

Graphene: Piecing it together

Graphene has a multitude of striking properties that make it an exceedingly attractive material for various applications, many of which will emerge over the next decade. However, one of the most promising applications lie in exploiting its peculiar electronic properties which are governed by its electrons obeying a linear dispersion relation. This leads to the observation of half integer quantum hall effect and the absence of localization. The latter is attractive for graphene-based field effect transistors. However, if graphene is to be the material for future electronics, then significant hurdles need to be surmounted, namely, it needs to be mass produced in an economically viable manner and be of high crystalline quality with no or virtually no defects or grains boundaries. Moreover, it will need to be processable with atomic precision. Hence, the future of graphene as a material for electronic based devices will depend heavily on our ability to piece graphene together as a single crystal and define its edges with atomic precision. In this progress report, the properties of graphene that make it so attractive as a material for electronics is introduced to the reader. The focus then centers on current synthesis strategies for graphene and their weaknesses in terms of electronics applications are highlighted.

cond-mat.mtrl-sci↗

arXiv2011

Multiscale Modeling of Nanowire-based Schottky-Barrier Field-Effect Transistors for Sensor Applications

We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport process. Our approach combines two approaches on different length scales: (1) the finite elements method is used to model realistic device geometries and to calculate the electrostatic potential across the Schottky-barrier by solving the Poisson equation, and (2) the Landauer approach combined with the method of non-equilibrium Green's functions is employed to calculate the charge transport through the device. Our model correctly reproduces typical I-V characteristics of field-effect transistors and the dependence of the saturated drain current on the gate field and the device geometry are in good agreement with experiments. Our approach is suitable for one-dimensional Schottky-barrier field-effect transistors of arbitrary device geometry and it is intended to be a simulation platform for the development of nanowire-based sensors.

cond-mat.mes-hall↗

arXiv2011

Direct Low Temperature Nano-Graphene Synthesis over a Dielectric Insulator

Graphene ranks highly as a possible material for future high-speed and flexible electronics. Current fabrication routes, which rely on metal substrates, require post synthesis transfer of the graphene onto a Si wafer or in the case of epitaxial growth on SiC, temperatures above 1000 °C are required. Both the handling difficulty and high temperatures are not best suited to present day silicon technology. We report a facile chemical vapor deposition approach in which nano-graphene and few layer graphene is directly formed over magnesium oxide and can be achieved at temperatures as low as 325 °C.

cond-mat.mes-hall↗

arXiv2011

The catalytic potential of high-k dielectrics for graphene formation

The growth of single and multilayer graphene nano-flakes on MgO and ZrO2 at low temperatures is shown through transmission electron microscopy. The graphene nano-flakes are ubiquitously anchored at step edges on MgO (100) surfaces. Density functional theory investigations on MgO (100) indicate C2H2 decomposition and carbon adsorption at step-edges. Hence, both the experimental and theoretical data highlight the importance of step sites for graphene growth on MgO.

cond-mat.mes-hall↗

arXiv2010

Efficient linear scaling method for computing the thermal conductivity of disordered materials

An efficient order$-N$ real-space Kubo approach is developed for the calculation of the thermal conductivity of complex disordered materials. The method, which is based on the Chebyshev polynomial expansion of the time evolution operator and the Lanczos tridiagonalization scheme, efficiently treats the propagation of phonon wave-packets in real-space and the phonon diffusion coefficients. The mean free paths and the thermal conductance can be determined from the diffusion coefficients. These quantities can be extracted simultaneously for all frequencies, which is another advantage in comparison with the Green's function based approaches. Additionally, multiple scattering phenomena can be followed through the time dependence of the diffusion coefficient deep into the diffusive regime, and the onset of weak or strong phonon localization could possibly be revealed at low temperatures for thermal insulators. The accuracy of our computational scheme is demonstrated by comparing the calculated phonon mean free paths in isotope-disordered carbon nanotubes with Landauer simulations and analytical results. Then, the upscalibility of the method is illustrated by exploring the phonon mean free paths and the thermal conductance features of edge disordered graphene nanoribbons having widths of $\sim$20 nanometers and lengths as long as a micrometer, which are beyond the reach of other numerical techniques. It is shown that, the phonon mean free paths of armchair nanoribbons are smaller than those of zigzag nanoribbons for the frequency range which dominate the thermal conductance at low temperatures. This computational strategy is applicable to higher dimensional systems, as well as to a wide range of materials.

cond-mat.mes-hall↗

arXiv2010

Organic Zener Diodes: Tunneling across the Gap in Organic Semiconductor Materials

Organic Zener diodes with a precisely adjustable reverse breakdown from -3 V to -15 V without any influence on the forward current-voltage curve are realized. This is accomplished by controlling the width of the charge depletion zone in a pin-diode with an accuracy of one nanometer independently of the doping concentration and the thickness of the intrinsic layer. The breakdown effect with its exponential current voltage behavior and a weak temperature dependence is explained by a tunneling mechanism across the HOMO-LUMO gap of neigh- boring molecules. The experimental data are confirmed by a minimal Hamiltonian model approach, including coherent tunneling and incoherent hopping processes as possible charge transport pathways through the effective device region.

cond-mat.mtrl-sci↗

arXiv2010

Structural stability versus conformational sampling in biomolecular systems: Why is the charge transfer efficiency in G4-DNA better than in double-stranded DNA?

The electrical conduction properties of G4-DNA are investigated using a hybrid approach, which combines electronic structure calculations, molecular dynamics (MD) simulations, and the formulation of an effective tight-binding model Hamiltonian. Charge transport is studied by computing transmission functions along the MD trajectories. Though G4-DNA is structurally more stable than double-stranded DNA (dsDNA), our results strongly suggest that the potential improvement of the electrical transport properties in the former is not necessarily related to an increased stability, but rather to the fact that G4 is able to explore in its conformational space a larger number of charge-transfer active conformations. This in turn is a result of the non-negligible interstrand matrix elements, which allow for additional charge transport pathways. The higher structural stability of G4 can however play an important role once the molecules are contacted by electrodes. In this case, G4 may experience weaker structural distortions than dsDNA and thus preserve to a higher degree its conduction properties.

cond-mat.mtrl-sci↗

arXiv2010

Phonon transport in large scale carbon-based disordered materials: Implementation of an efficient order-N and real-space Kubo methodology

We have developed an efficient order-N real-space Kubo approach for the calculation of the phonon conductivity which outperforms state-of-the-art alternative implementations based on the Green's function formalism. The method treats efficiently the time-dependent propagation of phonon wave packets in real space, and this dynamics is related to the calculation of the thermal conductance. Without loss of generality, we validate the accuracy of the method by comparing the calculated phonon mean free paths in disordered carbon nanotubes (isotope impurities) with other approaches, and further illustrate its upscalability by exploring the thermal conductance features in large width edge-disordered graphene nanoribbons (up to ~20 nm), which is out of the reach of more conventional techniques. We show that edge-disorder is the most important scattering mechanism for phonons in graphene nanoribbons with realistic sizes and thermal conductance can be reduced by a factor of ~10.

cond-mat.mes-hall↗

arXiv2010

Controlling the conductance of molecular wires by defect engineering: a divide et impera approach

Understanding of charge transport mechanisms in nanoscale structures is essential for the development of molecular electronic devices. Charge transport through 1D molecular systems connected between two contacts is influenced by several parameters such as the electronic structure of the molecule and the presence of disorder and defects. In this work, we have modeled 1D molecular wires connected between electrodes and systematically investigated the influence of both soliton formation and the presence of defects on properties such as the conductance and the density of states. Our numerical calculations have shown that the transport properties are highly sensitive to the position of both solitons and defects. Interestingly, the introduction of a single defect in the molecular wire which divides it into two fragments both consisting of an odd number of sites creates a new conduction channel in the center of the band gap resulting in higher zero-bias conductance than for defect free systems. This phenomenon suggests alternative routes toward engineering molecular wires with enhanced conductance.

cond-mat.mes-hall↗

arXiv2010

Electrical Conductance in Biological Molecules

Nucleic acids and proteins are not only biologically important polymers: They have recently been recognized as novel functional materials surpassing in many aspects the conventional ones. Although Herculean efforts have been undertaken to unravel fine functioning mechanisms of the biopolymers in question, there is still much more to be done. This particular paper presents the topic of biomolecular charge transport, with a particular focus on charge transfer/transport in DNA and protein molecules. Here the experimentally revealed details, as well as the presently available theories, of charge transfer/transport along these biopolymers are critically reviewed and analyzed. A summary of the active research in this field is also given, along with a number of practical recommendations.

cond-mat.soft↗

arXiv2010

Dissociative adsorption of methane on surface oxide structures of Pd-Pt alloys

The dissociative adsorption of methane on variously oxidized Pd, Pt and Pd-Pt surfaces is investigated using density-functional theory, as a step towards understanding the combustion of methane on these materials. For Pd-Pt alloys, models of surface oxide structures are built on the basis of known oxides on Pd and Pt. The methane adsorption energy presents large variations depending on the oxide structure and composition. Adsorption is endothermic on the bare Pd(111) metal surface as well as on stable thin layer oxide structures such as the ($\sqrt{5}\times\sqrt{5}$) surface oxide on Pd(100) and the PtO$_2$-like oxide on Pt(111). Instead, large adsorption energies are obtained for the (100) surface of bulk PdO, for metastable mixed Pd$_{1-x}$Pt$_x$O$_{4/3}$ oxide layers on Pt(100), and for Pd-Pt(111) surfaces covered with one oxygen monolayer. In the latter case, we find a net thermodynamic preference for a direct conversion of methane to methanol, which remains adsorbed on the oxidized metal substrates via weak hydrogen-bond interactions.

physics.chem-ph↗

arXiv2009

Spin Valve Effect in ZigZag Graphene Nanoribbons by Defect Engineering

We report on the possibility for a spin valve effect driven by edge defect engineering of zigzag graphene nanoribbons. Based on a mean-field spin unrestricted Hubbard model, electronic band structures and conductance profiles are derived, using a self-consistent scheme to include gate-induced charge density. The use of an external gate is found to trigger a semiconductor-metal transition in clean zigzag graphene nanoribbons, whereas it yields a closure of the spin-split bandgap in the presence of Klein edge defects. These features could be exploited to make novel charge and spin based switches and field effect devices.

cond-mat.mes-hall↗

arXiv2009

AC transport in graphene-based Fabry-Perot devices

We report on a theoretical study of the effects of time-dependent fields on electronic transport through graphene nanoribbon devices. The Fabry-Pérot interference pattern is modified by an ac gating in a way that depends strongly on the shape of the graphene edges. While for armchair edges the patterns are found to be regular and can be controlled very efficiently by tuning the ac field, samples with zigzag edges exhibit a much more complex interference pattern due to their peculiar electronic structure. These studies highlight the main role played by geometric details of graphene nanoribbons within the coherent transport regime. We also extend our analysis to noise power response, identifying under which conditions it is possible to minimize the current fluctuations as well as exploring scaling properties of noise with length and width of the systems.

cond-mat.mes-hall↗

arXiv2009

Silicon-based molecular switch junctions

In contrast to the static operations of conventional semiconductor devices, the dynamic conformational freedom in molecular devices opens up the possibility of using molecules as new types of devices such as a molecular conformational switch or for molecular data storage. Bistable molecules, with e.g. two stable cis and trans isomeric configurations, could provide, once clamped between two electrodes, a switching phenomenon in the nonequilibrium current response. Here, we model molecular switch junctions formed at silicon contacts and demonstrate the potential of tunable molecular switches in electrode/molecule/electrode configurations. Using the non equilibrium Green function approach implemented with the density-functional-based tight-binding theory, a series of properties such as electron transmissions, I-V characteristics in the different isomer-conformations, and potential energy surfaces as a function of the reaction coordinates along the trans to cis transition were calculated. Furthermore, in order to investigate stability of molecular switches in ambient conditions, molecular dynamics (MD) simulations at room temperature were performed and time- dependent fluctuations of the conductance along the MD pathways were calculated. Our numerical results show that the transmission spectra of the cis isomers are more conductive than trans counterparts inside the bias window for all two model molecules. The current-voltage characteristics consequently show the same trends. Additionally, the calculations of time-dependent transmission fluctuations along the MD pathways have shown that the transmission in cis isomers is always significantly larger than that of trans counterparts showing that molecular switches can be expected to work as robust molecular switching components.

cond-mat.mes-hall↗

arXiv2009

Analytical calculation of the excess current in the OTBK theory

We present an analytical derivation of the excess current in Josephson junctions within the Octavio-Tinkham-Blonder-Klapwijk theory for both symmetric and asymmetric barrier strengths. We confirm the result found numerically by Flensberg et al. for equal barriers [Phys. Rev. B 38, 8707 (1988)], including the prediction of negative excess current for low transparencies, and we generalize it for differing barriers. Our analytical formulae provide for convenient fitting of experimental data, also in the less studied, but practically relevant case of the barrier asymmetry.

cond-mat.supr-con↗