arXiv subjects

Giorgio De Simoni

Publications and source records attributed to Giorgio De Simoni.

At least 37 records · Page 2Linked to original sources

arXiv2024

Gate control of superconducting current: Mechanisms, parameters and technological potential

In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS effect, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS effect, and the material and device parameters that mostly affect it based on the evidence reported. We will come to the conclusion that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS effect can have towards high-performance computing with low-energy dissipation and quantum technologies.

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arXiv2024

Circuit-theoretic phenomenological model of an electrostatic gate-controlled bi-SQUID

A numerical model based on a lumped circuit element approximation for a bi-superconducting quantum interference device (bi-SQUID) operating in the presence of an external magnetic field is presented in this paper. Included in the model is the novel ability to capture the resultant behaviour of the device when a strong electric field is applied to its Josephson junctions by utilising gate electrodes. The model is used to simulate an all-metallic SNS (Al-Cu-Al) bi-SQUID, where good agreement is observed between the simulated results and the experimental data. The results discussed in this work suggest that the primary consequences of the superconducting field effect induced by the gating of the Josephson junctions are accounted for in our minimal model; namely, the suppression of the junctions super-current. Although based on a simplified semi-empirical model, our results may guide the search for a microscopic origin of this effect by providing a means to model the voltage response of gated SQUIDs. Also, the possible applications of this effect regarding the operation of SQUIDs as ultra-high precision sensors, where the performance of such devices can be improved via careful tuning of the applied gate voltages, are discussed at the end of the paper.

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arXiv2024

A quasiparticle-injection superconducting microwave relaxation oscillator

We propose a superconducting microwave relaxation oscillator based on a nanowire shunted by a resistor and an inductor controlled by quasiparticle injection from a tunnel junction positioned on it: the QUISTRON. This device exhibits relaxation oscillator behavior with DC voltage-controlled frequency tuning and DC current bias. The device frequency is modulated via the tunnel junction, which induces localized heating by injecting quasiparticles. This heating mechanism modulates the nanowire switching current, enabling relaxation oscillations when it falls below the bias current. We demonstrate the device operating principles and characterize its performance across various parameters, including different choices of shunt resistor, shunt inductance, and bath temperature ranging from 20 mK to 1 K. The device showed oscillation with a frequency range approximately between 1 GHz and 10 GHz and total energy dissipation per cycle of $\sim100$ zJ. Our results suggest that this design offers a promising platform for compact, tunable superconducting oscillators in the microwave spectrum with potential applications in quantum information processing, microwave technology, and ultra-low-power electronics. The straightforward frequency control mechanism and integration potential make this device an attractive candidate for superconducting microwave local oscillators.

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arXiv2024

Quasi-ideal feedback-loop supercurrent diode

We suggest using a device called the Bootstrap Superconducting Quantum Interference Device (BS-SQUID) to break the reciprocity in charge transport. This device uses magnetic flux back-action to create a nonreciprocal current-voltage characteristic, which results in a supercurrent rectification coefficient of up to approximately 95\%. The BS-SQUID works as a quasi-ideal supercurrent diode (SD) and maintains its efficiency up to about 40\% of its critical temperature. The external magnetic flux can be used to adjust or reverse the rectification polarity. Finally, we discuss the finite-voltage operation regime of the SD and present a possible application of our device as a half- and full-wave signal rectifier in the microwave regime.

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arXiv2023

Gate-controlled supercurrent effect in dry-etched Dayem bridges of non-centrosymmetric niobium rhenium

The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction, named as gate-controlled supercurrent (GCS), has raised great interest for fundamental and technological reasons. To gain a deeper understanding of this effect and develop superconducting technologies based on it, the material and physical parameters crucial for GCS must be identified. Top-down fabrication protocols should be also optimized to increase device scalability, although studies suggest that top-down fabricated devices are more resilient to show GCS. Here, we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the non-centrosymmetric superconductor NbRe. Unlike other devices previously reported, our NbRe devices systematically exhibit GCS, when made in specific conditions, which paves the way for higher device scalability. Our results also suggest that surface properties of NbRe nanobridges and their modification during fabrication are key for GCS.

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arXiv2023

Effects of fabrication routes and material parameters on the control of superconducting currents by gate voltage

The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronics. To date, however, the GCS effect has been mostly observed in superconducting devices made by additive patterning. Here, we show that devices made by subtractive patterning show a systematic absence of the GCS effect. Doing a microstructural analysis of these devices and comparing them to devices made by additive patterning, where we observe a GCS, we identify some material and physical parameters that are crucial for the observation of a GCS. We also show that some of the mechanisms proposed to explain the origin of the GCS effect are not universally relevant.

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arXiv2023

Bipolar thermoelectric superconducting single-electron transistor

Thermoelectric effects in normal metals and superconductors are usually very small due to the presence of electron-hole symmetry. Here, we show that superconducting junctions brought out of equilibrium manifest a sizable bipolar thermoelectric effect that stems from a strong violation of the detailed balance. To fully control the effect, we consider a thermally biased SIS'IS junction where the capacitance of the central S' region is small enough to establish a Coulomb blockade regime. By exploiting charging effects we are able to tune the Seebeck voltage, the thermocurrent, and thereby the power output of this structure, via an external gate. We then analyse the main figures of merit of bipolar thermoelectricity and we prospect for possible applications.

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arXiv2022

A gate- and flux-controlled supercurrent diode

Non-reciprocal charge transport in supercurrent diodes (SDs) polarized growing interest in the last few years for its potential applications in superconducting electronics (SCE). So far, SD effects have been reported in complex hybrid superconductor/semiconductor structures or metallic systems subject to moderate magnetic fields, thus showing a limited potentiality for practical applications in SCE. Here, we report the design and the realization of a monolithic SD by exploiting a Dayem bridge-based superconducting quantum interference device (SQUID). Our structure allows reaching rectification efficiencies ($η$) up to about 6%. Moreover, the absolute value and the polarity of $η$ can be selected on demand by the modulation of an external magnetic flux or by a gate voltage, thereby guaranteeing high versatility and improved switching speed. Furthermore, our SD operates in a wide range of temperatures up to about the 70% of the superconducting critical temperature of the titanium film composing the interferometer. Our SD can find extended applications in SCE by operating in synergy with widespread superconducting technologies, such as nanocryotrons, rapid single flux quanta (RSFQs) and memories.

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arXiv2022

Ultra linear magnetic flux-to-voltage conversion in superconducting quantum interference proximity transistors

Superconducting interferometers are quantum devices able to transduce a magnetic flux into an electrical output with excellent sensitivity, integrability and power consumption. Yet, their voltage response is intrinsically non-linear, a limitation which is conventionally circumvented through the introduction of compensation inductances or by the construction of complex device arrays. Here we propose an intrinsically-linear flux-to-voltage mesoscopic transducer, called bi-SQUIPT, based on the superconducting quantum interference proximity transistor as fundamental building block. The bi-SQUIPT provides a voltage-noise spectral density as low as $\sim10^{-16}$ V/Hz$^{1/2}$ and, more interestingly, under a proper operation parameter selection, exhibits a spur-free dynamic range as large as $\sim60$ dB, a value on par with that obtained with state-of-the-art SQUID-based linear flux-to-voltage superconducting transducers. Furthermore, thanks to its peculiar measurement configuration, the bi-SQUIPT is tolerant to imperfections and non-idealities in general. For the above reasons, we believe that the bi-SQUIPT could provide a relevant step-beyond in the field of low-dissipation and low-noise current amplification with a special emphasis on applications in cryogenic quantum electronics.

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arXiv2021

Ultra-Highly Linear Magnetic Flux-to-Voltage response in Proximity-based Mesoscopic bi-SQUIDs

Superconducting double-loop interferometers (bi-SQUIDs) have been introduced to produce magnetic flux sensors specifically designed to exhibit ultra-highly linear voltage response as a function of the magnetic flux. These devices are very important for the quantum sensing and for signal processing of signals oscillating at the radio-frequencies range of the electromagnetic spectrum. Here, we report an Al double-loop bi-SQUIDs based on proximitized mesoscopic Cu Josephson junctions. Such a scheme provides an alternative fabrication approach to conventional tunnel junction-based interferometers, where the junction characteristics and, consequently, the magnetic flux-to-voltage and magnetic flux-to-critical current device response can be largely and easily tailored by the geometry of the metallic weak-links. We discuss the performance of such sensors by showing a full characterization of the device switching current and voltage drop \textit{vs.} magnetic flux for temperatures of operation ranging from 30 mK to $\sim 1$ K. The figure of merit of the transfer function and of the total harmonic distortion are also discussed. The latter provides an estimate of the linearity of the flux-to-voltage device response, which obtained values as large as 45 dB. Such a result let us foresee a performance already on pair with that achieved in conventional tunnel junction-based bi-SQUIDs arrays composed of hundreds of interferometers.

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arXiv2021

Gate-control of the current-flux relation of a Josephson quantum interferometer based on proximitized metallic nanojuntions

We demonstrate an Al superconducting quantum interference device in which the Josephson junctions are implemented through gate-controlled proximitized Cu mesoscopic weak-links. The latter behave analogously to genuine superconducting metals in terms of the response to electrostatic gating, and provide a good performance in terms of current-modulation visibility. We show that, through the application of a static gate voltage, we are able to modify the interferometer current-flux relation in a fashion which seems compatible with the introduction of $π$-channels within the gated weak-link. Our results suggest that the microscopic mechanism at the origin of the suppression of the switching current in the interferometer is apparently phase coherent, resulting in an overall damping of the superconducting phase rigidity. We finally tackle the performance of the interferometer in terms of responsivity to magnetic flux variations in the dissipative regime, and discuss the practical relevance of gated proximity-based all-metallic SQUIDs for magnetometry at the nanoscale.

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arXiv2021

Phase slips dynamics in gated Ti and V all-metallic supercurrent nano-transistors: a review

The effect of electrostatic gating on metallic elemental superconductors was recently demonstrated in terms of modulation of the switching current and control of the current phase relation in superconducting quantum interferometers. The latter suggests the existence of a direct connection between the macroscopic quantum phase in a superconductor and the applied gate voltage. The measurement of the switching current cumulative probability distributions (SCCPD) is a convenient and powerful tool to analyze such relation. In particular, the comparison between the conventional Kurkijarvi-Fulton-Dunkleberger model and the gate-driven distributions give useful insights into the microscopic origin of the gating effect. In this review, we summarize the main results obtained in the analysis of the phase slip events in elemental gated superconducting weak-links in a wide range of temperatures between 20 mK and 3.5 K. Such a large temperature range demonstrates both that the gating effect is robust as the temperature increases, and that fluctuations induced by the electric field are not negligible in a wide temperature range.

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arXiv2021

Gate control of superconductivity in mesoscopic all-metallic devices

It was recently demonstrated the possibility to tune, through the application of a control gate voltage, the superconducting properties of mesoscopic devices based on Bardeen-Cooper-Schrieffer metals. In spite of the several experimental evidence obtained on different materials and geometries, a description of the microscopic mechanism at the basis of such unconventional effect has not been provided yet. This work discusses the technological potential of gate control of superconductivity in metallic superconductors and revises the experimental results which provide information regarding a possible thermal origin of the effect: in the first place, we review experiments performed on high critical temperature elemental superconductors (niobium and vanadium) and show how devices based on these materials can be exploited to realize basic electronic tools such as, e. g., a half-wave rectifier. In a second part, we discuss the origin of the gating effect by showing the gate-driven suppression of the supercurrent in a suspended titanium wire and by providing a comparison between thermal and electric switching current probability distributions. Furthermore, we discuss the cold field-emission of electrons from the gate by means of finite element simulations and compare the results with experimental data. Finally, the presented data provide a strong indication regarding the unlikelihood of thermal origin of the gating effect.

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arXiv2020

Niobium Dayem nano-bridge Josephson field-effect transistors

We report on the first realization of Nb-based \textit{all-metallic} gated Dayem nano-bridge field-effect transistors (Nb-FETs). These Josephson devices operate up to a temperature of $\sim 3$ K, and exhibit full suppression of the supercurrent thanks to the application of a control gate voltage. The dependence of the kinetic inductance and of the transconductance on gate voltage promises a performance already on par with so far realized metallic Josephson transistors, and let to foresee the implementation of a superconducting digital logic based on Nb-FETs. We conclude by showing the practical realization of a scheme implementing an all-metallic gate-tunable \emph{half-wave} rectifier to be used either for superconducting electronics or for photon detection applications.

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arXiv2020

Field-Effect Control of Metallic Superconducting Systems

Despite metals are believed to be insensitive to field-effect and conventional Bardeen-Cooper-Schrieffer (BCS) theories predict the electric field to be ineffective on conventional superconductors, a number of gating experiments showed the possibility of modulating the conductivity of metallic thin films and the critical temperature of conventional superconductors. All these experimental features have been explained by simple charge accumulation/depletion. In 2018, electric field control of supercurrent in conventional metallic superconductors has been demonstrated in a range of electric fields where the induced variation of charge carrier concentration in metals is negligibly small. In fact, no changes of normal state resistance and superconducting critical temperature were reported. Here, we review the experimental results obtained in the realization of field-effect metallic superconducting devices exploiting this unexplained phenomenon. We will start by presenting the seminal results on superconducting BCS wires and nano-constriction Josephson junctions (Dayem bridges) made of different materials, such as titanium, aluminum and vanadium. Then, we show the mastering of the Josephson supercurrent in superconductor-normal metal-superconductor proximity transistors suggesting that the presence of induced superconducting correlations are enough to see this unconventional field-effect. Later, we present the control of the interference pattern in a superconducting quantum interference device indicating the coupling of the electric field with thesuperconducting phase. Among the possible applications of the presented phenomenology, we conclude this review by proposing some devices that may represent a breakthrough in superconducting quantum and classical computation.

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arXiv2019

Field-Effect Controllable Metallic Josephson Interferometer

Gate-tunable Josephson junctions (JJs) are the backbone of superconducting classical and quantum computation. Typically, these systems exploit low charge concentration materials, and present technological diffculties limiting their scalability. Surprisingly, electric field modulation of supercurrent in metallic wires and JJs has been recently demonstrated. Here, we report the realization of titanium-based monolithic interferometers which allow tuning both JJs independently via voltage bias applied to capacitively-coupled electrodes. Our experiments demonstrate full control of the amplitude of the switching current (IS) and of the superconducting phase across the single JJ in a wide range of temperatures. Astoundingly, by gate-biasing a single junction the maximum achievable total IS suppresses down to values much lower than the critical current of a single JJ. A theoretical model including gate-induced phase fluctuations on a single junction accounts for our experimental findings. This class of quantum interferometers could represent a breakthrough for several applications such as digital electronics, quantum computing, sensitive magnetometry and single-photon detection.

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arXiv2019

Josephson Field-Effect Transistors Based on All-Metallic Al/Cu/Al Proximity Nanojunctions

We demonstrate the first \textit{all-metallic} mesoscopic superconductor-normal metal-superconductor (SNS) field-effect controlled Josephson transistors (SNS-FETs) and show their full characterization from the critical temperature $T_c$ down to 50 mK in the presence of both electric and magnetic field. The ability of a static electric field -applied by mean of a lateral gate electrode- to suppress the critical current $I_s$ in a proximity-induced superconductor is proven for both positive and negative gate voltage values. $I_s$ suppression reached typically about one third of its initial value, saturating at high gate voltages. The transconductance of our SNS-FETs obtains values as high as 100 nA/V at 100 mK. On the fundamental physics side, our results suggest that the mechanism at the basis of the observed phenomenon is quite general and does not rely on the existence of a true pairing potential, but rather the presence of superconducting correlations is enough for the effect to occur. On the technological side, our findings widen the family of materials available for the implementation of all-metallic field-effect transistors to \textit{synthetic} proximity-induced superconductors.

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arXiv2018

Magnetotransport Experiments on Fully Metallic Superconducting Dayem Bridge Field-Effect Transistors

In the last 60 years conventional solid and electrolyte gating allowed sizable modulations of the surface carrier concentration in metallic superconductors resulting in tuning their conductivity and changing their critical temperature. Recent conventional gating experiments on superconducting metal nano-structures showed full suppression of the critical current without variations of the normal state resistance and the critical temperature. These results still miss a microscopic explanation. In this article, we show a complete set of gating experiments on Ti-based superconducting Dayem bridges and a suggested classical thermodynamic model which seems to account for several of our experimental findings. In particular, zero-bias resistance and critical current IC measurements highlight the following: the suppression of IC with both polarities of gate voltage, the surface nature of the effect, the critical temperature independence from the electric field and the gate-induced growth of a sub-gap dissipative component. In addition, the temperature dependence of the Josephson critical current seems to show the transition from the ballistic Kulik-Omelyanchuck behavior to the Ambegaokar-Baratoff tunnel-like characteristic by increasing the electric field. Furthermore, the IC suppression persists in the presence of sizeable perpendicular-to-plane magnetic fields. We propose a classical thermodynamic model able to describe some of the experimental observations of the present and previous works. Above all, the model grabs the bipolar electric field induced suppression of IC and the emergence of a sub-gap dissipative component near full suppression of the supercurrent. Finally, applications employing the discussed effect are proposed.

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