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Giovanni Scuri

Publications and source records attributed to Giovanni Scuri.

At least 19 recordsLinked to original sources

Three-Wave Mixing Element with Quantum Paraelectric Materials

At cryogenic temperatures and microwave frequencies, the perovskite crystals strontium titanate (STO) and potassium tantalate (KTO) have large, tunable permittivity arising from a quantum paraelectric phase. As such, these materials hold promise as a platform to realize compact, variable capacitance elements for use in quantum devices. From modulating this capacitance, we propose the development of a parametric mixing element: a quantum paraelectric nonlinear dielectric amplifier (PANDA). We calculate that a PANDA made from a nanofabricated parallel plate capacitor and realistic design constraints can demonstrate a three-wave mixing strength of order MHz, in comparison to an effective Kerr strength of sub-Hz. This suggests excellent performance as a three-wave mixing element, with high compression power in analogy to superconducting parametric amplifiers based on kinetic inductance. Beyond parametric amplifiers, we predict that compact, tunable capacitors based on STO, KTO, and related materials can enable a wide class of cryogenic quantum circuits including novel filters, switches, circulators, and qubits.

quant-ph

Quantum sensing with a spin ensemble in a two-dimensional material

Quantum sensing with solid-state spin defects has transformed nanoscale metrology, offering sub-wavelength spatial resolution with exceptional sensitivity to multiple signal types. Maximizing these advantages requires minimizing both the sensor-target separation and the detectable signal threshold. However, leading platforms such as nitrogen-vacancy (NV) centers in diamond suffer from performance degradation near surfaces or in nanoscale volumes, motivating the search for optically addressable spin sensors in atomically thin, two-dimensional (2D) van der Waals materials. Here, we present a comprehensive experimental framework to probe a 2D spin ensemble, including its Hamiltonian, coherent sensing dynamics, and noise environment. Using a central spin system in a hexagonal boron nitride (hBN) crystal, we fully map the hyperfine interactions with proximal nuclear spins, demonstrate switchable magnetic and electric noise sensing, and introduce a method to accurately reconstruct the environmental noise spectrum while explicitly accounting for quantum control imperfections. We achieve a record coherence time of $80~\mu\mathrm{s}$ under dynamical decoupling, enabling sub-microtesla AC magnetic sensitivity at a $10~\mathrm{nm}$ target distance. Leveraging the broad opportunities for defect engineering in atomically thin hosts, these results lay the foundation for next-generation quantum sensors with ultrahigh sensitivity, tunable noise selectivity, and versatile functionalities.

quant-ph

Quantum sensing of electron beams using solid-state spins

Scattering experiments with energetic particles, such as free electrons, have been historically used to reveal the quantum structure of matter. However, realizing coherent interactions between free-electron beams and solid-state quantum systems has remained out of reach, owing to their intrinsically weak coupling. Realizing such coherent control would open up opportunities for hybrid quantum platforms combining free electrons and solid-state qubits for coincident quantum information processing and nanoscale sensing. Here, we present a framework that employs negatively charged nitrogen-vacancy centers (NV-) in diamond as quantum sensors of a bunched electron beam. We develop a Lindblad master equation description of the magnetic free-electron--qubit interactions and identify spin relaxometry as a sensitive probe of the interaction. Experimentally, we integrate a confocal fluorescence microscopy setup into a microwave-bunched electron beam line. We monitor charge-state dynamics and assess their impact on key sensing performance metrics (such as spin readout contrast), defining safe operating parameters for quantum sensing experiments. By performing $T_1$ relaxometry under controlled electron beam exposure, we establish an upper bound on the free-electron--spin coupling strength. Our results establish NV- centers as quantitative probes of free electrons, providing a metrological benchmark for free-electron--qubit coupling under realistic conditions, and chart a route toward solid-state quantum control with electron beams.

quant-ph

Mesoscopic cavity quantum electrodynamics with phase-disordered emitters in a Kerr nonlinear resonator

The field of cavity quantum electrodynamics (QED) has seen a recent resurgence of interest in few- and many-body physics owing to the realization that the breaking of symmetries and the presence of disorder can give rise to entirely new phenomena. Here we demonstrate a few-emitter cavity QED system capable of realizing new Hamiltonians in quantum optics based on breaking of symmetries and the realization of an in situ Kerr nonlinearity. Our experiment relies on a high-finesse silicon carbide whispering gallery mode resonator hosting an ensemble of silicon vacancy color centers. The simultaneous presence of spectral and spatial disorder of the mesoscopic atom system gives rise to emergent chirality, and the optical nonlinearity of the silicon carbide host crystal enables the observation of atom-photon correlations induced by a four-photon nonlinear process. This work demonstrates the potential for solid state defect systems to realize emerging proposals and to study fundamental physics in quantum electrodynamics.

quant-ph

Quantum critical electro-optic and piezo-electric nonlinearities

Electro-optics, the tuning of optical properties of materials with electric fields, is key to a multitude of quantum and classical photonics applications. However, a major obstacle preventing many emerging use cases is inefficient modulation in cryogenic environments, as traditional tuning mechanisms degrade at low temperatures. Guided by the connection between phase transitions and nonlinearity, we identify the quantum paraelectric perovskite SrTiO$_3$ (STO) as the strongest cryogenic electro-optic photonic material. As a result of the unique quantum paraelectric phase of STO, we demonstrate a dynamically tunable linear Pockels coefficient ($r_{33}$) exceeding 500 pm/V at $T=5$ K, and study its full temperature and bias dependence. We also measure an enhanced piezo-electric coefficient ($d_{33}$) above 90 pC/N. Both of these coefficients exceed all previously reported values for cryogenic materials, including lithium niobate ($r_{33}\approx24$ pm/V) and barium titanate ($r_{42}\approx170$ pm/V). Furthermore, by tuning STO towards \textit{quantum criticality} with oxygen isotope substitution we more than double the optical and piezo-electric nonlinearities, demonstrating a linear Pockels coefficient above 1100 pm/V. Our results probe the link between quantum phase transitions, dielectric susceptibility, and optical nonlinearities, unlocking opportunities in cryogenic optical and mechanical systems, and provide a framework for discovering new nonlinear materials.

cond-mat.mtrl-sci

Dynamical Control of Excitons in Atomically Thin Semiconductors

Excitons in transition metal dichalcogenides (TMDs) have emerged as a promising platform for novel applications ranging from optoelectronic devices to quantum optics and solid state quantum simulators. While much progress has been made towards characterizing and controlling excitons in TMDs, manipulating their properties during the course of their lifetime - a key requirement for many optoelectronic device and information processing modalities - remains an outstanding challenge. Here we combine long-lived interlayer excitons in angle-aligned MoSe$_2$/WSe$_2$ heterostructures with fast electrical control to realize dynamical control schemes, in which exciton properties are not predetermined at the time of excitation but can be dynamically manipulated during their lifetime. Leveraging the out-of-plane exciton dipole moment, we use electric fields to demonstrate dynamical control over the exciton emission wavelength. Moreover, employing a patterned gate geometry, we demonstrate rapid local sample doping and toggling of the radiative decay rate through exciton-charge interactions during the exciton lifetime. Spatially mapping the exciton response reveals charge redistribution, offering a novel probe of electronic transport in twisted TMD heterostructures. Our results establish the feasibility of dynamical exciton control schemes, unlocking new directions for exciton-based information processing and optoelectronic devices, and the realization of excitonic phenomena in TMDs.

cond-mat.mes-hall

Epitaxially defined Luttinger liquids on MoS$_2$ bicrystals

A mirror twin boundary (MTB) in a transition metal dichalcogenide (TMD) monolayer can host one-dimensional electron liquid of a topological nature with tunable interactions. Unfortunately, the electrical characterization of such boundaries has been challenging due to the paucity of samples with large enough size and high quality. Here, we report an epitaxial growth of monolayer molybdenum disulfide (MoS$_2$) bicrystals with well-isolated MTBs that are tens of micrometers long. Conductance measurements of these MTBs exhibit power-law behaviors as a function of temperature and bias voltage up to room temperature, consistent with electrons tunneling into a Luttinger liquid. Transport measurements of two distinct types of MTBs reveal the critical role of the atomic-scale defects. This study demonstrates that MTBs in TMD monolayers provide an exciting new platform for studying the interplay between electronic interactions and topology.

cond-mat.mes-hall

Single-Shot Readout and Weak Measurement of a Tin-Vacancy Qubit in Diamond

The negatively charged tin-vacancy center in diamond (SnV$^-$) is an emerging platform for building the next generation of long-distance quantum networks. This is due to the SnV$^-$'s favorable optical and spin properties including bright emission, insensitivity to electronic noise, and long spin coherence times at temperatures above 1 Kelvin. Here, we demonstrate measurement of a single SnV$^-$ electronic spin with a single-shot readout fidelity of $87.4\%$, which can be further improved to $98.5\%$ by conditioning on multiple readouts. We show this performance is compatible with rapid microwave spin control, demonstrating that the trade-off between optical readout and spin control inherent to group-IV centers in diamond can be overcome for the SnV$^-$. Finally, we use weak quantum measurement to study measurement induced dephasing; this illuminates the fundamental interplay between measurement and decoherence in quantum mechanics, and makes use of the qubit's spin coherence as a metrological tool. Taken together, these results overcome an important hurdle in the development of the SnV$^-$ based quantum technologies, and in the process, develop techniques and understanding broadly applicable to the study of solid-state quantum emitters.

quant-ph

Observation of an electronic microemulsion phase emerging from a quantum crystal-to-liquid transition

Strongly interacting electronic systems possess rich phase diagrams resulting from the competition between different quantum ground states. A general mechanism that relieves this frustration is the emergence of microemulsion phases, where regions of different phase self-organize across multiple length scales. The experimental characterization of these phases often poses significant challenges, as the long-range Coulomb interaction microscopically mingles the competing states. Here, we use cryogenic reflectance and magneto-optical spectroscopy to observe the signatures of the mixed state between an electronic Wigner crystal and an electron liquid in a MoSe2 monolayer. We find that the transit into this 'microemulsion' state is marked by anomalies in exciton reflectance, spin susceptibility, and Umklapp scattering, establishing it as a distinct phase of electronic matter. Our study of the two-dimensional electronic microemulsion phase elucidates the physics of novel correlated electron states with strong Coulomb interactions.

cond-mat.str-el

Controlled Interlayer Exciton Ionization in an Electrostatic Trap in Atomically Thin Heterostructures

Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating the IE Stark shift, electron-hole pair concentrations above $2\times10^{12}$ cm$^{-2}$ can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures, but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. Our demonstration of the IE ionization in a tunable electrostatic trap represents an important step towards the realization of dipolar exciton condensates in solid-state optoelectronic devices.

cond-mat.mes-hall

Orbital Multiferroicity in Pentalayer Rhombohedral Graphene

Ferroic orders describe spontaneous polarization of spin, charge, and lattice degrees of freedom in materials. Materials featuring multiple ferroic orders, known as multiferroics, play important roles in multi-functional electrical and magnetic device applications. 2D materials with honeycomb lattices offer exciting opportunities to engineer unconventional multiferroicity, where the ferroic orders are driven purely by the orbital degrees of freedom but not electron spin. These include ferro-valleytricity corresponding to the electron valley and ferro-orbital-magnetism supported by quantum geometric effects. Such orbital multiferroics could offer strong valley-magnetic couplings and large responses to external fields-enabling device applications such as multiple-state memory elements, and electric control of valley and magnetic states. Here we report orbital multiferroicity in pentalayer rhombohedral graphene using low temperature magneto-transport measurements. We observed anomalous Hall signals Rxy with an exceptionally large Hall angle (tanΘH > 0.6) and orbital magnetic hysteresis at hole doping. There are four such states with different valley polarizations and orbital magnetizations, forming a valley-magnetic quartet. By sweeping the gate electric field E we observed a butterfly-shaped hysteresis of Rxy connecting the quartet. This hysteresis indicates a ferro-valleytronic order that couples to the composite field E\cdot B, but not the individual fields. Tuning E would switch each ferroic order independently, and achieve non-volatile switching of them together. Our observations demonstrate a new type of multiferroics and point to electrically tunable ultra-low power valleytronic and magnetic devices.

cond-mat.mes-hall

Microwave Spin Control of a Tin-Vacancy Qubit in Diamond

The negatively charged tin-vacancy (SnV-) center in diamond is a promising solid-state qubit for applications in quantum networking due to its high quantum efficiency, strong zero phonon emission, and reduced sensitivity to electrical noise. The SnV- has a large spin-orbit coupling, which allows for long spin lifetimes at elevated temperatures, but unfortunately suppresses the magnetic dipole transitions desired for quantum control. Here, by use of a naturally strained center, we overcome this limitation and achieve high-fidelity microwave spin control. We demonstrate a pi-pulse fidelity of up to 99.51+/0.03%$ and a Hahn-echo coherence time of T2echo = 170.0+/-2.8 microseconds, both the highest yet reported for SnV- platform. This performance comes without compromise to optical stability, and is demonstrated at 1.7 Kelvin where ample cooling power is available to mitigate drive induced heating. These results pave the way for SnV- spins to be used as a building block for future quantum technologies.

quant-ph

An inverse-designed nanophotonic interface for excitons in atomically thin materials

Efficient nanophotonic devices are essential for applications in quantum networking, optical information processing, sensing, and nonlinear optics. Extensive research efforts have focused on integrating two-dimensional (2D) materials into photonic structures, but this integration is often limited by size and material quality. Here, we use hexagonal boron nitride (hBN), a benchmark choice for encapsulating atomically thin materials, as a waveguiding layer while simultaneously improving the optical quality of the embedded films. When combined with photonic inverse design, it becomes a complete nanophotonic platform to interface with optically active 2D materials. Grating couplers and low-loss waveguides provide optical interfacing and routing, tunable cavities provide a large exciton-photon coupling to transition metal dichalcogenides (TMD) monolayers through Purcell enhancement, and metasurfaces enable the efficient detection of TMD dark excitons. This work paves the way for advanced 2D-material nanophotonic structures for classical and quantum nonlinear optics.

physics.optics

Beam steering at the nanosecond time scale with an atomically thin reflector

Techniques to mold the flow of light on subwavelength scales enable fundamentally new optical systems and device applications. The realization of programmable, active optical systems with fast, tunable components is among the outstanding challenges in the field. Here, we experimentally demonstrate a few-pixel beam steering device based on electrostatic gate control of excitons in an atomically thin semiconductor with strong light-matter interactions. By combining the high reflectivity of a MoSe2 monolayer with a graphene split-gate geometry, we shape the wavefront phase profile to achieve continuously tunable beam deflection with a range of 10$^\circ$, two-dimensional beam steering, and switching times down to 1.6 nanoseconds. Our approach opens the door for a new class of atomically thin optical systems, such as rapidly switchable beam arrays and quantum metasurfaces operating at their fundamental thickness limit.

cond-mat.mes-hall

Correlated Insulator and Chern Insulators in Pentalayer Rhombohedral Stacked Graphene

Rhombohedral stacked multilayer graphene is an ideal platform to search for correlated electron phenomena, due to its pair of flat bands touching at zero energy and further tunability by an electric field. Furthermore, its valley-dependent Berry phase at zero energy points to possible topological states when the pseudospin symmetry is broken by electron correlation. However, experimental explorations of these opportunities are very limited so far, due to a lack of devices with optimized layer numbers and configurations. Here we present electron transport measurements of hBN-encapsulated pentalayer graphene at down to 100 milli-Kelvin. We observed a correlated insulating state with >MOhm resistance at zero charge density and zero displacement field, where the tight-binding calculation predicts a metallic ground state. By increasing the displacement field, we observed a Chern insulator state with C = -5 and two other states with C = -3 at a low magnetic field of ~1 Tesla. At high displacement fields and charge densities, we observed isospin-polarized quarter- and half-metals. Therefore, rhombohedral-stacked pentalayer graphene is the first graphene system to exhibit two different types of Fermi-surface instabilities: driven by a pair of flat bands touching at zero energy, and by the Stoner mechanism in a single flat band. Our results demonstrate a new direction to explore intertwined electron correlation and topology phenomena in natural graphitic materials without the need of moir\'e superlattice engineering.

cond-mat.mes-hall

Probing dark exciton navigation through a local strain landscape in a WSe$_2$ monolayer

Monolayers of transition metal dichalcogenides (TMDs) have recently emerged as a promising optoelectronic platform. To leverage their full potential, however, it is important to understand and engineer the properties of the different exciton species that exist in these monolayers, as well as to control their transport through the material. A promising approach relies on engineering strain landscapes in atomically thin semiconductors that excitons navigate. In WSe$_2$ monolayers, for example, localized strain has been used to control the emission wavelength of excitons, induce exciton funneling and conversion, and even realize single-photon sources and quantum dots. Before these phenomena can be fully leveraged for applications, including quantum information processing, the details of excitons' interaction with the strain landscape must be well understood. To address this, we have developed a cryogenic technique capable of probing the dynamics of both bright and dark excitons in nanoscale strain landscapes in TMDs. In our approach, a nanosculpted tapered optical fiber is used to simultaneously generate strain and probe the near-field optical response of WSe$_2$ monolayers at 5 K. When the monolayer is pushed by the fiber, its lowest energy photoluminescence (PL) peaks red shift by as much as 390 meV, (corresponding to 20% of the bandgap of an unstrained WSe$_2$ monolayer). The red-shifting peaks are polarized perpendicularly to the WSe$_2$ plane and have long rising times (10 ps) and lifetimes (52 ps), indicating that they originate from nominally spin-forbidden dark excitons. Taken together, these observations indicate that dark excitons are funneled to the high-strain regions during their long lifetime and are the principal participants in drift and diffusion at cryogenic temperatures. Our work elucidates the important role that dark excitons play in locally strained WSe$_2$.

cond-mat.mes-hall

Electrically controlled emission from singlet and triplet exciton species in atomically thin light emitting diodes

Excitons are composite bosons that can feature spin singlet and triplet states. In usual semiconductors, without an additional spin-flip mechanism, triplet excitons are extremely inefficient optical emitters. Transition metal dichalcogenides (TMDs), with their large spin-orbit coupling, have been of special interest for valleytronic applications for their coupling of circularly polarized light to excitons with selective valley and spin$^{1-4}$. In atomically thin MoSe$_2$/WSe$_2$ TMD van der Waals (vdW) heterostructures, the unique atomic registry of vdW layers provides a quasi-angular momentum to interlayer excitons$^{5,6}$, enabling emission from otherwise dark spin triplet excitons. Here, we report electrically tunable spin singlet and triplet exciton emission from atomically aligned TMD heterostructures. We confirm the spin configurations of the light-emitting excitons employing magnetic fields to measure effective exciton g-factors. The interlayer tunneling current across the TMD vdW heterostructure enables the electrical generation of singlet and triplet exciton emission in this atomically thin PN junction. We demonstrate electrically tunability between the singlet and triplet excitons that are generated by charge injection. Atomically thin TMD heterostructure light emitting diodes thus enables a route for optoelectronic devices that can configure spin and valley quantum states independently by controlling the atomic stacking registry.

cond-mat.mes-hall

Signatures of bilayer Wigner crystals in a transition metal dichalcogenide heterostructure

A Wigner crystal, a regular electron lattice arising from strong correlation effects, is one of the earliest predicted collective electronic states. This many-body state exhibits quantum and classical phase transitions and has been proposed as a basis for quantum information processing applications. In semiconductor platforms, two-dimensional Wigner crystals have been observed under magnetic field or moiré-based lattice potential where the electron kinetic energy is strongly suppressed. Here, we report bilayer Wigner crystal formation without a magnetic or confinement field in atomically thin MoSe$_2$ bilayers separated by hexagonal boron nitride. We observe optical signatures of robust correlated insulating states formed at symmetric (1:1) and asymmetric (4:1 and 7:1) electron doping of the two MoSe$_2$ layers at cryogenic temperatures. We attribute these features to the bilayer Wigner crystals formed from two commensurate triangular electron lattices in each layer, stabilized via inter-layer interaction. These bilayer Wigner crystal phases are remarkably stable and undergo quantum and thermal melting transitions above a critical electron density of up to $6 \times10^{12}$ cm$^{-2}$ and at temperatures of ~40 K. Our results demonstrate that atomically thin semiconductors provide a promising new platform for realizing strongly correlated electronic states, probing their electronic and magnetic phase transitions, and developing novel applications in quantum electronics and optoelectronics.

cond-mat.mes-hall