arXiv subjects

Giselle A. Elbaz

Publications and source records attributed to Giselle A. Elbaz.

3 recordsLinked to original sources

arXiv2026

Highly uniform first-electron position in qubit arrays fabricated on dedicated QSOI(R) 300mm commercial platform

We report progress toward the development of a quantum silicon-on-insulator (QSOI(R)) technology compatible with 300mm CMOS fabrication and adapted from the 28nm Fully-Depleted SOI (28nm FD-SOI) platform for scalable quantum computing. We compare quantum devices fabricated with standard 28nm FD-SOI and QSOI(R) technologies, and show striking improvements of room temperature electrostatic properties of the individual device. Moreover, the QSOI(R) technology has significantly reduced the device variability and the dispersion of device properties at the wafer level. Transistor metrics are reproduced by TCAD simulations showing that the electrostatics of the devices behave as expected for QSOI(R) technology. Wafer-scale measurements at sub-2K show reproducible quantum dots down to the few-electron regime with 69\% yield for successful charge detection of the first electron and a dispersion of the first electron position of $\mathrm{\pm 35 mV}$ over 377 quantum dots. These results establish QSOI(R) as a promising platform for CMOS-compatible quantum device co-integration.

cond-mat.mes-hall↗

arXiv2025

Transport characterization and quantum dot coupling in commercial 22FDX

Different groups worldwide have been working with the GlobalFoundries 22nm platform (22FDX) with the hopes of industrializing the fabrication of Si spin qubits. To guide this effort, we have performed a systematic study of six of the foundry's processes of reference (POR). Using effective mobility as a figure of merit, we study the impact of gate stack, channel type and back bias as a function of temperature. This screening process selected qubit devices that allowed us to couple quantum dots along both the length and width of the Si channel. We present stability diagrams with clear and regular honeycomb patterns, where spurious elements such as dopants are not observed. By combining these results with room and low temperature simulations, we provide insights into potential technology optimizations and show both the utility of qubit pre-screening protocols as well as the advantages of leveraging forward body bias within an FDSOI (Fully Depleted Silicon-On-Insulator) qubit platform.

cond-mat.mes-hall↗

arXiv2017

Controlled Electrochemical Intercalation of Graphene/h-BN van der Waals Heterostructures

Electrochemical intercalation is a powerful method for tuning the electronic properties of layered solids. In this work, we report an electro-chemical strategy to controllably intercalate lithium ions into a series of van der Waals (vdW) heterostructures built by sandwiching graphene between hexagonal boron nitride (h-BN). We demonstrate that encapsulating graphene with h-BN eliminates parasitic surface side reactions while simultaneously creating a new hetero-interface that permits intercalation between the atomically thin layers. To monitor the electrochemical process, we employ the Hall effect to precisely monitor the intercalation reaction. We also simultaneously probe the spectroscopic and electrical transport properties of the resulting intercalation compounds at different stages of intercalation. We achieve the highest carrier density $> 5 \times 10^{13} cm^{-2}$ with mobility $> 10^3 cm^2/(Vs)$ in the most heavily intercalated samples, where Shubnikov-de Haas quantum oscillations are observed at low temperatures. These results set the stage for further studies that employ intercalation in modifying properties of vdW heterostructures.

cond-mat.mes-hall↗