arXiv subjects

Giulia Meucci

Publications and source records attributed to Giulia Meucci.

4 recordsLinked to original sources

arXiv2026

Intrinsic Negative-U Centers in Freestanding LaAlO3/SrTiO3 Micro-membranes

The LaAlO3/SrTiO3 (LAO/STO) interface hosts a rich range of electronic phenomena, including unconventional electron pairing that in quantum dots gives rise to a negative effective charging energy U. Here, we show freestanding LAO/STO micro-membranes naturally hosting negative-U centers, where lateral confinement arises intrinsically, rather than from engineered nanostructures. These centers coexist with gate-tunable superconductivity and can remain stable upon thermal cycling from millikelvin temperatures to room temperature. Transport is in excellent agreement with calculations based on a negative-U Anderson model, and electrostatic simulations indicate characteristic center sizes of 20-80 nm. Our findings suggest that negative-U centers may arise from the intrinsic interfacial inhomogeneity typical of LAO/STO, and should therefore be considered a general feature of the LAO/STO interface. This could have important consequences for the microwave response of interfacial superconducting devices.

cond-mat.mtrl-sci↗

arXiv2025

Cryogenic performance of field-effect transistors and amplifiers based on selective area grown InAs nanowires

Indium-Arsenide (InAs) nanowire field-effect transistors (NWFETs) are promising platforms for high-speed, low-power nanoelectronics operating at cryogenic conditions, relevant for quantum information processing. We use selective area growth (SAG) of nanowires to realize scalable and planar nanowire device geometries that are compatible with standard semiconductor processing techniques. NWFETs are fabricated and their low temperature characteristics - including ION/IOFF ratios, threshold voltages, sub-threshold slope, interfacial trap density, hysteresis, and mobility - are characterized. The NWFETs operate effectively in integrated circuitry relying on saturation-mode operation. In sub-threshold applications such as amplifiers, we find bandwidths exceeding our cryostat wiring, but the gate hysteresis presents challenges for precise tuning of the amplifier operating point. We discuss the role of crystal imperfections and fabrication processes on the transistor characteristics and propose strategies for further improvements.

cond-mat.mes-hall↗

arXiv2025

Gradient Electronic Landscapes in van der Waals Heterostructures

Two-dimensional (2D) materials such as graphene and hexagonal boron nitride (hBN) provide a versatile platform for quantum electronics. Experiments generally require encapsulating graphene within hBN flakes, forming a protective van der Waals (vdW) heterostructure that preserves delicate properties of the embedded crystal. To produce functional devices, heterostructures are typically shaped by electron beam lithography and etching, which has driven progress in 2D materials research. However, patterns are primarily restricted to in-plane geometries such as boxes, holes, and stripes, limiting opportunities for advanced architectures. Here, we use thermal scanning-probe lithography (tSPL) to produce smooth topographic landscapes in vdW heterostructures, controlling the thickness degree of freedom with nanometer precision. We electrically gate a sinusoidal topography to impose an electric-field gradient on the graphene layer to spatially modulate charge-carrier doping. We observe signatures of the landscape in transport measurements-resistance-peak spreading and commensurability oscillations-establishing tSPL for tailoring high-quality quantum electronics.

cond-mat.mes-hall↗

arXiv2022

Tuning magnetoelectricity in a mixed-anisotropy antiferromagnet

Control of magnetization and electric polarization is attractive in relation to tailoring materials for data storage and devices such as sensors or antennae. In magnetoelectric materials, these degrees of freedom are closely coupled, allowing polarization to be controlled by a magnetic field, and magnetization by an electric field, but the magnitude of the effect remains a challenge in the case of single-phase magnetoelectrics for application. We demonstrate that the magnetoelectric properties of the mixed-anisotropy antiferromagnet LiNi$_{1-x}$Fe$_x$PO$_4$ are profoundly affected by replacing a fraction of the Ni$^{2+}$ ions with Fe$^{2+}$ on the transition metal site. This introduces random site-dependent single-ion anisotropy energies and causes a lowering of the magnetic symmetry of the system. In turn, magnetoelectric couplings that are symmetry-forbidden in the parent compounds, LiNiPO$_4$ and LiFePO$_4$, are unlocked and the dominant coupling is enhanced by two orders of magnitude. Our results demonstrate the potential of mixed-anisotropy magnets for tuning magnetoelectric properties.

cond-mat.str-el↗