arXiv subjects

Godfrey Gumbs

Publications and source records attributed to Godfrey Gumbs.

At least 37 records · Page 2Linked to original sources

arXiv2023

Quantized Hall current in topological nodal-line semimetal

Photocurrent acts as one of measurable responses of material to light, which has proved itself to be crucial for sensing and energy harvesting. Topological semimetals with gapless energy dispersion and abundant topological surface and bulk states exhibit exotic photocurrent responses, such as novel quantized circular photogalvanic effect observed in Weyl semimetals. Here we find that for a topological nodal-line semimetal (NLSM) with nodal ring bulk states and drumhead surface states (DSS), a significant photocurrent can be produced by an electromagnetic (EM) wave by means of the quantum Hall effect. The Hall current is enabled by electron transfer between Landau levels (LLs) and triggered by both the electric field and magnetic field components of an EM wave. This Hall current is physically connected to an unusually large quantum-Hall conductivity of the zeroth LLs resulting from quantized DSS. These LLs are found to be highly degenerate due to the unique band-folding effect associated with magnetic-field-induced expansion of a unit cell. Furthermore, we observe that the Hall current induced solely by an in-plane linearly-polarized EM wave becomes a quantized entity which allows for possible direct measurement of the DSS density in a topological NLSM. This work paves a way toward designing high-magnetic-field-sensitivity detection devices for industrial and space applications, such as the development of self-detection of current-surge-induced overheating in electronic devices and accurate Earth's magnetic-anomaly maps for guiding a self-navigating drone or an aircraft.

cond-mat.mes-hall↗

arXiv2023

Polaritonic and Excitonic Time Crystals based on TMDC strips in an external periodic potential

We investigated the dynamics of Bose-Einstein condensates (BECs) under an external periodic potential. We consider two such systems, the first being made of exciton-polaritons in a nanoribbon of transition metal dichalcogenides (TMDCs), such as MoSe$_2$, embedded in a microcavity with a special curvature, which serves as the source of the external potential. The second, made of bare excitons in a nanoribbon of twisted TMDC bilayer, which naturally creates a periodic Moiré potential that can be controlled by the angle of twist. We proved that such systems exhibit a Time Crystal (TC) phase. This was demonstrated by the fact that the calculated BEC spatial density profile shows a non-trivial two-point correlator that oscillates in time. These BECs density profiles were calculated by solving the quantum Lindblad master equations for the density matrix within the mean-field approximation. We then go beyond the usual mean-field approach, by adding a stochastic term to the master equation, which corresponds to quantum corrections, and we show that the TC phase is still present.

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arXiv2022

Dynamical optical conductivity for gapped $α-\mathcal{T}_3$ materials with a curved "flat" band

We have calculated the dynamical optical conductivity for $α-\mathcal{T}_3$ materials in the presence of a finite bandgap in their energy bandstructure. This is a special type of energy dispersions because for all $α-\mathcal{T}_3$ materials with a bandgap, except graphene and a dice lattice limits, the flat band receives a non-zero dispersion and assumes a curved shape. The infinite ${\bf k}$-degeneracy of the flat energy band is also lifted. Such a low-energy bandstructure could be obtained if an $α-\mathcal{T}_3$ material is irradiated off-resonant with circularly polarized light. We have calculated the optical conductivity for the zero and finite temperatures, as well as for the cases of a finite and nearly-zero doping. We have demonstrated that analytical expressions could be in principle obtained for all types of gapped $α-\mathcal{T}_3$ materials and provided the closed-form analytical expressions for a gapped dice lattice. Our numerical results reveal some well-known signatures of the optical conductivity in $α-\mathcal{T}_3$ and silicene with two non-equivalent bandgaps, as well as demonstrate some very specific features which have not been previously found in any existing Dirac materials.

cond-mat.mtrl-sci↗

arXiv2022

Floquet engineering of titled and gapped Dirac materials

We have established a rigorous theoretical formalism for Floquet engineering, or investigating and eventually tailoring most crucial electronic properties of tetragonal molybdenum disulfide (1T$^\prime$-MoS$_2$), by applying an external high-frequency dressing field in the off-resonant regime. It was recently demonstrated that monolayer semiconducting1T$^\prime$-MoS$_2$ may assume a distorted tetragonal structure which exhibits tunable and gapped spin- and valley-polarized tilted Dirac bandstructure. From the viewpoint of electronics, 1T$^\prime$-MoS$_2$ is one of the most technologically promising nanomaterials and a novel representative of an already famous family of transition metal dichalcogenides. The obtained dressed states strongly depend on the polarization of the applied irradiation and reflect the full complexity of the initial low-energy Hamiltonian of non-irradiated material. We have calculated and analyzed the obtained electron dressed states for linear and circular types of the polarization of the applied field focusing on their symmetrical properties, anisotropy, tilting and bandgaps, as well as topological signatures. Since a circularly polarized dressing field is also known to induce a transition into a new state with broken time-reversal symmetry and a non-zero Chern number, the combination of these topologically non-trivial phases and transitions between them could reveal some truly unique and earlier unknown phenomena.

cond-mat.mtrl-sci↗

arXiv2022

Polarizability, plasmons, and screening in 1T${^\prime}$-MoS$_2$ with tilted Dirac bands

In the presence of an external vertical electric field and strain, it is evident that 1T${^\prime}$-MoS$_2$ exhibits tilted Dirac bands which are valley-spin-polarized. Additionally, this material experiences a topological phase change between a topological insulator and band insulator for a critical value of the electric field. Using linear response theory, we calculated the polarization function which is in turn employed to obtain the dielectric function. This latter quantity is subsequently utilized in calculations to determine the plasmons dispersion relation, their decay rate and impurity screening corresponding to various levels of doping, the critical applied vertical electric field strengths and the spin-orbit coupling gap in 1T${^\prime}$-MoS$_2$ with tilted Dirac bands.

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arXiv2022

Developing a semiclassical Wentzel-Kramers-Brillouin theory for $α-\mathcal{T}_3$ model

We have developed a complete semiclassical Wentzel-Kramers-Brillouin (WKB) theory for $α-\mathcal{T}_3$ model which describes a wide class of existing pseudospin-1 Dirac cone materials. By expanding the sought wave functions in a series over the powers of Planck constant $\hbar$, we have obtained the leading order expansion term which is the key quantity required for calculating the electronic and transport properties of a semiclassical electron in $α-\mathcal{T}_3$. We have derived the transport equations connecting each two consecutive orders of the wave function expansion and solved them to obtained the first order WKB wavefunction. We have also discussed the applicability of the obtained approximation and how these results could be used to investigate various tunneling and transport properties of $α-\mathcal{T}_3$ materials with non-trivial potential profiles. Our results could be also helpful for constructing electronics devices and transistors based on innovative flat-band Dirac materials.

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arXiv2022

Plasmon damping rates in Coulomb-coupled two-dimensional layers in a heterostructure

The Coulomb excitations of charge density oscillation are calculated for a double-layer heterostructure. Specifically, we consider two-dimensional (2D) layers of silicene and graphene on a substrate. From the obtained surface response function, we calculated the plasmon dispersion relations which demonstrate the way in which the Coulomb coupling renormalizes the plasmon frequencies. Additionally, we present a novel result for the damping rates of the plasmons in this Coulomb coupled heterostructure and compare these results as the separation between layers is varied.

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arXiv2022

Rashba spin-orbit coupling and quantum-interference effect for a pair of spin-correlated electrons in their tunneling and reflection under a step potential

We present both theory and numerical-computation results for the transmission and reflection probability currents of a charged particle across a potential step in the presence of a Rashba spin-orbit interaction. By varying kinetic energy and angle of incident electrons or barrier height, different features associated with tunneling and reflection of electrons are revealed by inter-spin-channel electron tunnelings and reflections. These unique properties are further accompanied by spin-state quantum interference of either a reflected or transmitted pairs of spin-correlated electrons with the same kinetic energy but in different spin-orbital states. Such distinctive features are expected to give rise to a lot of applications in both spintronics and quantum-computation devices.

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arXiv2022

Finite-temperature plasmons, damping and collective behavior for $α-\mathcal{T}_3$ model

We have conducted a thorough theoretical and numerical investigation of the electronic susceptibility, polarizability, plasmons, their damping rates, as well as the static screening in pseudospin-1 Dirac cone materials with a flat band, or for a general $α- \mathcal{T}_3$ model, at finite temperatures. This includes calculating the polarization function, plasmon dispersions and their damping rates at arbitrary temperatures and obtaining analytical approximations the long wavelength limit, low and high temperatures. We demonstrate that the integral transformation of the polarization function cannot be used directly for a dice lattice revealing some fundamental properties and important applicability limits of the flat band dispersions model. At $k_B T \ll E_F$, the largest temperature-induced change of the polarization function and plasmons comes from the mismatch between the chemical potential and the Fermi energy. We have also obtained a series of closed-form semi-analytical expressions for the static limit of the polarization function of an arbitrary $α- \mathcal{T}_3$ material at any temperature with exact analytical formulas for the high, low and zero temperature limits which is of tremendous importance for all types of transport and screening calculations for the flat band Dirac materials.

cond-mat.mtrl-sci↗

arXiv2022

Generalized Peierls substitution for the tight-binding model of twisted multilayer graphene in a magnetic field

We propose a generalized Peierls substitution method in conjunction with the tight-binding model to explore the magnetic quantization and quantum Hall effect in twisted multilayer graphene under a magnetic field. The Bloch-basis tight-binding Hamiltonian is constructed for large twist angle while a simplified tight-binding model is employed for the magic angle. We investigate extensively the band structures, Landau levels (LLs), and quantum Hall conductivity (QHC) of twisted bilayer graphene and twisted double bilayer graphene, as well as their dependence on the twist angle. Comparison between these crucial properties of monolayer graphene, Bernal bilayer graphene, and the twisted systems is carefully made to highlight the roles played by twisting. The unique selection rules of inter-LL transition, which is crucial for achieving a deep understanding of the step structures of QHC, are identified through the properties of LL wave functions. Our theoretical model opens up an opportunity for comprehension of the interplay between an applied magnetic field and the twisting effect associated with multilayer graphene.

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arXiv2021

Tunneling conductivity fast modulated by optically-dressed electrons in graphene and a dice lattice

Based on the transmission coefficient of tunneling electrons, we have presented tunneling current and conductivity across a square-potential barrier for both graphene and $α$-$\mathcal{T}_3$ lattices under a linearly-polarized off-resonant dressing field. The presence of such a dressing field introduces an anisotropy factor in the energy dispersion of tunneling electrons so that the cross section of a Dirac-cone appears as elliptical. Consequently, the field-polarization controlled major axis of the ellipse will be misaligned with the normal direction of a barrier layer in the tunneling system, which exhibits an asymmetric Klein-paradox for an off-normal-direction tunneling. The resulting tunneling current in this system is calculated by using a transmission coefficient and a longitudinal group velocity (different from a longitudinal momentum) of electrons. By presenting numerically calculated tunneling conductivity modified by a laser dressing field, we demonstrate a significant enhancement of electrical conductivity by external laser-field intensity, which is expected to be crucial in application of ultrafast optical modulation of opto-electronic devices for photo-detection and fiber-optic communication.

cond-mat.mes-hall↗

arXiv2021

Quantum entanglement between excitons in two-dimensional materials

The quantum entanglement between two excitons in two-dimensional materials, embedded in an optical microcavity, was investigated. The energy eigenstates of a Jaynes-Cummings like Hamiltonian for two qubits coupled to a single cavity mode have been calculated. The quantum entanglement between such states was estimated by calculating the concurrence between two qubits in each of these eigenstates. According to the results of our calculations, if the system is allowed to decay only through the emission of cavity photons at low temperatures, there is a maximally entangled eigenstate, protected from decay. We demonstrated that the existence of such a state results in the counter-intuitive conclusion that, for some initial states of the system, the fact that the cavity is leaky can actually lead to an increase in the average concurrence on the timescales of the average photonic lifetime. In addition, we calculated the time evolution of the concurrence between a pair of excitons in a strained graphene monolayer.

cond-mat.mes-hall↗

arXiv2021

Engineering plasmon modes and their loss in armchair graphene nanoribbons by selected edge-extended defects

The effect of edge modification of armchair graphene nanoribbons (AGNRs) on the collective excitations are theoretically investigated. The tight-binding method is employed in conjunction with the dielectric function. Unconventional plasmon modes and their association with the flat bands of the specially designed AGNRs are thoroughly studied. We demonstrate the robust relationship between the novel collective excitations and both the type and period of the edge modification. Additionally, we reveal that the main features displayed in the (momentum, frequency)-phase diagrams for both single-particle and collective excitations of AGNRs can be efficiently tuned by edge-extended defects. Our obtained plasmon modes are found to be analogous to magnetoplasmons associated with collective excitations of Landau-quantized electrons. This work provides a unique way to engineer discrete magnetoplasmon-like modes of AGNRs in the absence of magnetic field.

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arXiv2021

Adjustable propagating plasmons in $α-\mathcal{T}_3$ lattice-based armchair nanoribbons

We have obtained and analyzed the electronic states, polarization function and the plasmon excitations for $α- \mathcal{T}_3$-based nanoribbons with armchair termination. The calculated plasmon dispersions strongly depend on the number of the atomic rows across the ribbon, and the presence of the energy gap between the valence and conduction bands which is also determined by the nanoribbon geometry. The bandgap was proven to have the strongest effect on both the plasmon dispersions and their Landau damping. We have also demonstrated that for a small electron doping the plasmon dispersions do not depend on the relative hopping parameter $α$ of the considered $α- \mathcal{T}_3$ material in the long-wave limit and investigated the conditions when $α$ becomes an important factor which strongly affects the plasmons. We believe that our new uncovered electronic and collective properties of nano-size $α- \mathcal{T}_3$ribbons will find their applications in the field of modern electronics and nanodevices.

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arXiv2021

Coherent-scatterer enhancement and Klein-tunneling suppression by potential barriers in gapped graphene with chirality-time-reversal symmetry

We have utilized the finite-difference approach to explore electron-tunneling properties in gapped graphene through various electrostatic-potential barriers changing from Gaussian to a triangular envelope function in comparison with a square potential barrier. Transmission coefficient is calculated numerically for each case and applied to corresponding tunneling conductance. It is well known that Klein tunneling in graphene will be greatly reduced in a gapped graphene. Our results further demonstrate that such a decrease of transmission can be significantly enhanced for spatially-modulated potential barriers. Moreover, we investigate the effect from a bias field applied to those barrier profiles, from which we show that it enables the control of electron flow under normal incidence. Meanwhile, the suppression of Klein tunneling is found more severe for a non-square barrier and exhibits a strong dependence on bias-field polarity for all kinds of barriers. Finally, roles of a point impurity on electron transmission and conductance are analyzed with a sharp peak appearing in electron conductance as the impurity atom is placed at the middle of a square barrier. For narrow triangular and Gaussian barriers, however, the conductance peaks become significantly broadened, associated with an enhancement in tunneling conductance.

cond-mat.mes-hall↗

arXiv2021

Defect capturing and charging dynamics and their effects on magneto-transport of electrons in quantum wells

The defect corrections to polarization and dielectric functions of Bloch electrons in quantum wells are first calculated. Following this, we derive the first two moment equations from Boltzmann transport theory and apply them to explore defect effects on magneto-transport of Bloch electrons. Meanwhile, we obtain analytically the momentum-relaxation time and mobility tensor for Bloch electrons making use of the screened defect-corrected polarization function. Based on quantum-statistical theory, we further investigate the defect capture and charging dynamics by employing a parameterized physics model for defects to obtain defect wave functions. After this, both capture and relaxation rates, as well as density for captured Bloch electrons, are calculated self-consistently as functions of temperature, doping density and different defect types. By applying the energy-balance equation, the number of occupied energy levels and chemical potential of defects are determined, with which the transition rate for defect capturing is obtained. By using these results, defect energy-relaxation, capture and escape rates, and Bloch-electron chemical potential are obtained self-consistently. At the same time, the Bloch-electron energy- and momentum-relaxation rates, as well as the current suppression factor, are also investigated quantitatively. Finally, by combining all these studies together, the temperature dependence of the Hall and longitudinal mobilities is demonstrated for Bloch electrons in either single- or multi-quantum wells, which can be utilized for quantifying burst noise in transistors and blinking noise in photo-detectors.

cond-mat.mes-hall↗

arXiv2021

Influence of electric and magnetic fields and $σ$-edge bands on the electronic and optical spectra of graphene nanoribbons

The unusual electronic and optical properties of armchair and zigzag graphene nanoribbons (GNRs) subject to in-plane transverse electric and perpendicular magnetic fields have been systematically investigated. Our calculations were carried out within the generalized multi-orbital tight-binding model based on a Hamiltonian which takes into account hopping integrals among the (s, $p_x$, $p_y$, $p_z$) atomic orbitals as well as the external electric and magnetic fields. The electronic structure consists of $π$ bands arising from the $p_z$ orbital and $σ$ bands originating from the (s, $p_x$, $p_y$) orbitals. The energy bands and optical spectra are diversified by both the nature of the edge of the nanoribbon and strength of the external fields. Armchair GNRs display a width-dependent energy gap in addition to low-energy $σ$ bands while the zigzag system has the unfilled flat band with $π$ edge states at zero energy and partially filled wide-range $σ$ bands. An applied in-plane electric field leads to the splitting of energy bands and shifted Fermi level, thereby enriching the inter-band and intra-band optical conductivities. The interplay between an external magnetic field and the edge geometry gives rise to extraordinary quantized Landau levels and special optical spectra.

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arXiv2021

Generalized WKB theory for electron tunneling in gapped $α-\mathcal{T}_3$ lattices

We generalize Wentzel-Kramers-Brillouin (WKB) semi-classical equations for pseudospin-1 $α-\mathcal{T}_3$ materials with arbitrary hopping parameter $0 < α< 1$, which includes the dice lattice and graphene as two limiting cases. In conjunction with a series-expansion method in powers of Planck constant $\hbar$, we acquired and solved a system of recurrent differential equations for semi-classical electron wave functions in $α-\mathcal{T}_3$. Making use of these obtained wave functions, we analyzed the physics-related mechanism and quantified the transmission of pseudospin-1 Dirac electrons across non-rectangular potential barriers in $α-\mathcal{T}_3$ materials with both zero and finite band gaps. Our studies reveal several unique features, including the way in which the electron transmission depends on the energy gap, the slope of the potential barrier profile and the transverse momentum of incoming electrons. Specifically, we have found a strong dependence of the obtained transmission amplitude on the geometry-phase $ϕ= \tan^{-1} α$ of $α-\mathcal{T}_3$ lattices. We believe our current findings can be applied to Dirac cone-based tunneling transistors in ultrafast analog RF devices, as well as to tunneling-current control by a potential barrier through a one-dimensional array of scatters.

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