arXiv subjects

Gregory M. Stephen

Publications and source records attributed to Gregory M. Stephen.

16 recordsLinked to original sources

arXiv2026

Demonstrating magnetic memory in iron-rhodium structures using a quantum diamond microscope

Iron-rhodium (FeRh) has a first-order phase transition near room temperature between antiferromagnetic (AFM) and ferromagnetic (FM) phases, making it a promising material for magnetic memory technologies like heat-assisted magnetic recording (HAMR). It has a comparatively sharper phase transition and lower writing temperature than alternative materials, implying less thermal engineering constraints and an increase in write/read head lifetime. Despite great effort, however, AFM-based magnetic memory using FeRh has not yet been realized. Here, we employ both wide-field and scanning nanoscale quantum diamond microscopes (QDMs) to image directly the magnetic field of a patterned FeRh thin film structure under ambient conditions, demonstrating a magnetic recording technique that is reliable and robust. We experimentally identify coupling between the N\'eel and magnetization vector directions; and also, that the magnetic orientation of the FM phase uniquely determines the N\'eel vector in the AFM phase, due to pinned uncompensated magnetic moments (UMMs) in the FeRh structure. Thus, the magnetic orientation is maintained when the system is cycled between AFM and FM phases, providing the foundation for a practical, AFM-based magnetic memory.

cond-mat.mtrl-sci↗

arXiv2026

Evidence of a Hybridized Topological State in Weyl Semimetal/Topological Insulator Mn$_{3+x}$Sn$_{1-x}$/Bi$_{0.85}$Sb$_{0.15}$ Heterostructures

We report magnetotransport evidence of a hybridized Weyl semimetal (WSM) Fermi arc/topological insulator (TI) surface state at the interface of a ferromagnetic Mn$_{3+x}$Sn$_{1-x}$/Bi$_{0.85}$Sb$_{0.15}$ heterostructure. High target utilization sputtering (HiTUS) was used to grow polycrystalline Mn$_{3+x}$Sn$_{1-x}$ films and Mn$_{3+x}$Sn$_{1-x}$/Bi$_{0.85}$Sb$_{0.15}$ heterostructures on thermally oxidized Si/SiO$_2$ (100) substrates that exhibit the negative coefficient anomalous Hall effect (AHE) resulting from topological Weyl node transport. When various defects and impurities are introduced into these Mn$_{3+x}$Sn$_{1-x}$ films, a ferromagnetic (FM) phase develops that practically eliminates the topological Weyl node conduction. These FM Mn$_{3+x}$Sn$_{1-x}$ films exhibit large exchange bias effects below T=200 K that we attribute to the coexistence of a FM phase and the triangular antiferromagnetic (AFM) WSM phase. When Bi$_{0.85}$Sb$_{0.15}$ overlayers are grown on the FM Mn$_{3+x}$Sn$_{1-x}$, the magnetotransport signal of Weyl node topological transport is restored, an effect we do not observe when replacing the Bi$_{0.85}$Sb$_{0.15}$ TI with heavy metal overlayers. We attribute the restoration of the Weyl node topological transport to the formation of a hybridized topological state at the WSM/TI interface.

cond-mat.mtrl-sci↗

arXiv2026

Spatially-resolved voltage-reversal due to Bernoulli potentials in dissipative Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$

We measure magneto-transport and critical currents in Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ Hall bar devices. Above critical current in an applied magnetic field, we observe longitudinal differential voltage along one edge comparable in magnitude but opposite in sign to the other edge. This phenomenon is unaffected by reversal of the applied field, and seems unique to devices with invasive voltage contacts. We attribute the source of this behavior to particle-hole symmetry breaking in moving vortices and the formation of opposite Bernoulli potentials due to opposing vortex velocities at the edges where the invasive contacts create hotspots for rapid vortex nucleation and flux flow. These results are fundamental to the composition and flow of dissipative currents in layered superconductors.

cond-mat.supr-con↗

arXiv2025

Anomalous low-field magnetoresistance in Fe$_3$Ga$_4$ single crystals

Fe$_3$Ga$_4$ possesses a helical spin spiral with a complex competition between ferromagnetic and antiferromagnetic ground states. This competition generates multiple metamagnetic transitions that are governed by both applied magnetic field and temperature. At intermediate temperatures between T$_1$ (68 K) and T$_2$ (360 K), the ferromagnetically aligned spins transition to an antiferromagnetic spin spiral. In this study, magnetoresistance (MR) measurements are performed on an aligned single crystal and compared to magnetization properties in order to gain insight on the unique alignment of the spins. The high-field MR is positive at low temperatures indicating cyclotronic behavior and negative at high temperature from electron-magnon scattering. Of particular significance is a large anomalous positive MR at low fields, possibly due to emergent spin fluctuations thus prompting further exploration of this multifaceted material.

cond-mat.mtrl-sci↗

arXiv2025

Direct Comparison of Static and Dynamic Measurements of Spin Generation in a Topological Insulator Thin Film

The competition between intrinsic spin-orbit physics, magnetic phenomena, and the quality of materials and interfaces governs the charge-to-spin conversion processes that are essential to the implementation of spintronic devices. Direct comparisons of spin parameters, which serve as metrics of device quality, obtained by different measurement techniques are scarce, leading to uncertainty regarding discrepancies and the reliability of the methods. Here, we directly compare the spin Hall coefficient ($θ_{SH}$) in molecular beam epitaxy grown films of $(Bi_{1-x}Sb_{x})_{2}Te_{3-y}Se_{y}$ (BSTS, x = 0.58, y = 1) at room temperature using two complementary techniques: a static method using non-local voltage (NLV) measurements in BSTS Hall bars with DC charge current, and a dynamic method using spin-torque ferromagnetic resonance (ST-FMR) measurement in $BSTS/Ni_{80}Fe_{20}$ heterostructures at GHz frequencies. We obtain comparable spin Hall coefficients in angular-dependent ST-FMR ($θ_{SH}$=$4.7\pm1.1$) and in NLV ($θ_{SH}$=$2.8\pm0.6$). The complex effects of ferromagnetic interfaces while determining spin Hall coefficients using static or dynamic techniques becomes evident by contrasting our results to literature.

cond-mat.mtrl-sci↗

arXiv2025

Probing Magnetic Properties of RuO$_{2}$ Heterostructures Through the Ferromagnetic Layer

RuO$_{2}$ has been proposed as the prototypical altermagnetic material. However, several reports have recently questioned its intrinsic magnetic ordering, leading to conflicting findings, especially in thin film heterostructures pointing to possible interface effects being convoluted with supposed antiferromagnetic/altermagnetic signatures. Here, extensive magnetometry measurements were performed on two independently grown thin film heterostructures of RuO$_{2}$ interfaced with either NiFe or Fe acting as the ferromagnetic layer. Below about 15 K, both samples exhibit exchange bias fields when cooled to approximately 2 K in a $+$1 T field, and a spin transitional feature is observed around 31 K. Magneto-Raman measurements on RuO$_{2}$ thin films only reveal a magnon mode when there is a NiFe layer, suggesting that RuO$_{2}$ does not intrinsically possess long range magnetic ordering.. When in contact with a ferromagnet, RuO$_2$ displays effects that could be ascribed to antiferromagnetism. However, the lack of intrinsic magnon modes points toward possible diffusion between the layers or spin disorder at the interface as seen by density functional theory (DFT) calculations.

cond-mat.mtrl-sci↗

arXiv2025

Differentiating anomalous and topological Hall effects using first-order reversal curve measurements

Next generation magnetic memories rely on novel magnetic phases for information storage. Novel spin textures such as skyrmions provide one possible avenue forward due to their topological protection and controllability via electric fields. However, the common signature of these spin textures, the topological Hall effect (THE), can be mimicked by other trivial effects. Competing anomalous Hall effect (AHE) components can produce a peak in the Hall voltage similar to that of the THE, making clear identification of the THE difficult. By applying the first-order reversal curve (FORC) technique to the Hall effect in candidate topological Hall systems we can clearly distinguish between the THE and AHE. This technique allows for quantitative investigation of the THE and AHE in magnetic materials and heterostructures with topologically non-trivial spin textures. We demonstrate the technique and apply it to several examples.

cond-mat.mes-hall↗

arXiv2025

Quantum Monte Carlo and density functional theory study of strain and magnetism in 2D 1T-VSe$_2$ with charge density wave states

Two-dimensional (2D) 1T-VSe$_2$ has prompted significant interest due to the discrepancies regarding alleged ferromagnetism (FM) at room temperature, charge density wave (CDW) states and the interplay between the two. We employed a combined Diffusion Monte Carlo (DMC) and density functional theory (DFT) approach to accurately investigate the magnetic properties, CDW states, and their response to strain in monolayer 1T-VSe$_2$. Our calculations show the delicate competition between various phases, revealing critical insights into the relationship between their energetic and structural properties. We performed classical Monte Carlo simulations informed by our DMC and DFT results, and found the magnetic transition temperature ($T_c$) of the undistorted (non-CDW) FM phase to be 228 K and the distorted (CDW) phase to be 68 K. Additionally, we studied the response of biaxial strain on the energetic stability and magnetic properties of various phases of 2D 1T-VSe$_2$ and found that small amounts of strain can increase the $T_c$, suggesting a promising route for engineering and enhancing magnetic behavior. Finally, we synthesized 1T-VSe$_2$ and performed Raman spectroscopy measurements, which were in close agreement with our calculated results, validating our computational approach. Our work emphasizes the role of highly accurate DMC methods in advancing the understanding of monolayer 1T-VSe$_2$ and provides a robust framework for future studies of 2D magnetic materials.

cond-mat.mtrl-sci↗

arXiv2025

Intrinsic Spin Transport in a Topological Insulator Thin Film

Topological insulators (TIs) are intriguing materials for advanced computing applications based on spintronics because they can host robust spin effects. For instance, TIs have intrinsically large spin generation enabled by their large spin-orbit coupling. Furthermore, topological surface states (TSS) with spin-momentum locking and Dirac dispersion lead to long spin diffusion. Future spintronic device technology will require scalable film growth of high-quality material. We grow epitaxial films of Bi$_{1-x}$Sb$_x$Te$_{3-y}$Se$_y$ (BSTS, $x = 0.58, y = 1$) and confirm the gapless band structure with optimal doping using angle-resolved photoelectron spectra. The temperature dependence of longitudinal resistivity shows bulk transport is suppressed as temperature is decreased, and at low temperature surface transport dominates. We evaluate the spin transport properties in BSTS without using ferromagnetic tunnel contacts via a non-local resistance experiment as a function of temperature and applied charge current. As expected, these experiments reveal the necessity of decreasing the bulk conduction to best enhance the spin transport. In the TSS, we find high efficiency of charge-to-spin conversion (spin Hall angle, $θ_{SH} \approx 1$) and spin diffusion over several microns. Further development of high-quality TIs will make them viable candidates for efficient and lossless spintronics.

cond-mat.mes-hall↗

arXiv2023

Spintronic Quantum Phase Transition in a $Graphene/Pb_{0.24}Sn_{0.76}Te$ Heterostructure with Giant Rashba Spin-Orbit Coupling

Mechanical stacking of two dissimilar materials often has surprising consequences for heterostructure behavior. In particular, a two-dimensional electron gas (2DEG) is formed in the heterostructure of the topological crystalline insulator Pb0.24Sn0.76Te and graphene due to contact of a polar with a nonpolar surface and the resulting changes in electronic structure needed to avoid polar catastrophe. We study the spintronic properties of this heterostructure with non-local spin valve devices. We observe spin-momentum locking at lower temperatures that transitions to regular spin channel transport only at ~40 K. Hanle spin precession measurements show a spin relaxation time as high as 2.18 ns. Density functional theory calculations confirm that the spin-momentum locking is due to a giant Rashba effect in the material and that the phase transition is a Lifshitz transition. The theoretically predicted Lifshitz transition is further evident in the phase transition-like behavior in the Landé g-factor and spin relaxation time.

cond-mat.mes-hall↗

arXiv2022

Magnetotransport in graphene/Pb0.24Sn0.76Te heterostructures: finding a way to avoid catastrophe

While heterostructures are ubiquitous tools enabling new physics and device functionalities, the palette of available materials has never been richer. Combinations of two emerging material classes, two-dimensional materials and topological materials, are particularly promising because of the wide range of possible permutations that are easily accessible. Individually, both graphene and Pb0.24Sn0.76Te (PST) are widely investigated for spintronic applications because graphene's high carrier mobility and PST's topologically protected surface states are attractive platforms for spin transport. Here, we combine monolayer graphene with PST and demonstrate a hybrid system with properties enhanced relative to the constituent parts. Using magnetotransport measurements, we find carrier mobilities up to 20,000 cm2/Vs and a magnetoresistance approaching 100 percent, greater than either material prior to stacking. We also establish that there are two distinct transport channels and determine a lower bound on the spin relaxation time of 4.5 ps. The results can be explained using the polar catastrophe model, whereby a high mobility interface state results from a reconfiguration of charge due to a polar/non-polar interface interaction. Our results suggest that proximity induced interface states with hybrid properties can be added to the still growing list of remarkable behaviors in these novel materials.

cond-mat.mtrl-sci↗

arXiv2022

High-speed metamagnetic resistive switching of FeRh through Joule heating

Due to its proximity to room temperature and demonstrated high degree of temperature tunability, the metamagnetic ordering transition in FeRh is attractive for novel high-performance computing devices seeking to use magnetism as the state variable. We demonstrate electrical control of the transition via Joule heating in FeRh wires. Finite element simulations based on abrupt state transition within each domain result in a globally smooth transition that agrees with the experimental findings and provides insight into the thermodynamics involved. We measure a 150 K decrease in transition temperature with currents up to 60 mA, limited only by the dimensions of the device. The sizeable shift in transition temperature scales with current density and wire length, suggesting the absolute resistance and heat dissipation of the substrate are also important. The FeRh phase change is evaluated by pulsed I-V using a variety of bias conditions. We demonstrate high speed (~ ns) memristor-like behavior and report device performance parameters such as switching speed and power consumption that compare favorably with state-of-the-art phase change memristive technologies.

cond-mat.mes-hall↗

arXiv2019

Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl

The spin-filter material CrVTiAl is a promising candidate for producing highly spin-polarized currents at room temperature in a nonmagnetic architecture. Thin films of compensated-ferrimagnetic CrVTiAl have been grown and their electrical and magnetic properties have been studied. The resistivity shows two-channel semiconducting behavior with one disordered gapless channel and a gapped channel with activation energy $ΔE$=~0.1~-~0.2~eV. Magnetoresistance measurements to B~=~35~T provide values for the mobilities of the gapless channel, leading to an order of magnitude difference in the carrier effective masses, which are in reasonable accord with our density-functional-theory based results. The density of states and electronic band structure is computed for permutations of the four sublattices arranged differently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti), spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases. Robustness of the spin-gapless phase to substitutional disorder is also considered.

cond-mat.mtrl-sci↗

arXiv2019

Structural and electronic properties of the spin-filter material CrVTiAl with disorder

The effects of chemical disorder on the transport properties of the spin-filter material CrVTiAl are investigated experimentally and theoretically. Synchrotron X-ray diffraction experiments on bulk CrVTiAl and the associated Rietveld analysis indicate that the crystal structure consists primarily of a mixture of a partially ordered B2 phase, a fully disordered A2 phase and a small component of an ordered L2\textsubscript{1} or Y phase. High temperature resistivity measurements confirm the existence of a band gap. First-principles, all-electron, self-consistent electronic structure computations show that the chemically disordered A2 and B2 phases are metallic, while the spin-filter properties of the ideal Y-type phase are preserved in the presence of L2\textsubscript{1} disorder. The Hall coefficient is found to decrease with increasing temperature, similar to the measured increase in the conductivity, indicating the presence of thermally activated semiconductor-like carriers.

cond-mat.mtrl-sci↗

arXiv2016

Synthesis of low-moment CrVTiAl: a potential room temperature spin filter

The efficient production of spin-polarized currents at room temperature is fundamental to the advancement of spintronics. Spin-filter materials --- semiconductors with unequal band gaps for each spin channel --- can generate spin-polarized current without the need for spin-polarized contacts. In addition, a spin-filter material with zero magnetic moment would have the advantage of not producing strong fringing fields that would interfere with neighboring electronic components and limit the volume density of devices. The quaternary Heusler compound CrVTiAl has been predicted to be a zero-moment spin-filter material with a Curie temperature in excess of 1000 K. In this work, CrVTiAl has been synthesized with a lattice constant of $a = 6.15 Å$. Magnetization measurements reveal an exceptionally low moment of $μ= 2.3 \times 10^{-3} μ_B/f.u.$ at a field of $μ_0 H = 2 T$, that is independent of temperature between T = 10 K and 400 K, consistent with the predicted zero-moment ferrimagnetism. Transport measurements reveal a combination of metallic and semiconducting components to the resistivity. Combining a zero-moment spin-filter material with nonmagnetic electrodes would lead to an essentially nonmagnetic spin injector. These results suggest that CrVTiAl is a promising candidate for further research in the field of spintronics.

cond-mat.mtrl-sci↗

arXiv2016

Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy

Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure, however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with SQUID magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity with an activation energy of 87 meV. These results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.

cond-mat.mtrl-sci↗