arXiv subjects

Guangdi Zhou

Publications and source records attributed to Guangdi Zhou.

21 records · Page 2Linked to original sources

arXiv2024

Ambient-pressure superconductivity onset above 40 K in bilayer nickelate ultrathin films

The discovery of bilayer nickelate superconductors under high pressure has opened a new chapter in high-transition temperature (high-TC) superconductivity. Here, we report ambient-pressure superconductivity onset above the McMillan limit (40 K) in bilayer nickelate epitaxial ultrathin films. Three-unit-cell (3UC) thick La2.85Pr0.15Ni2O7 single-phase-crystalline films are grown using the gigantic-oxidative atomic-layer-by-layer epitaxy (GOALL-Epitaxy) on SrLaAlO4 substrates. Resistivity measurements and magnetic-field responses indicate onset TC = 45 K. The transition to zero resistance exhibits characteristics consistent with a Berezinskii-Kosterlitz-Thouless (BKT)-like behavior, with TBKT = 9 K. Meissner diamagnetic effect is observed at TM = 8.5 K via a mutual inductance setup, in agreement with the BKT-like transition. In-plane and out-of-plane critical magnetic fields exhibit anisotropy. Scanning transmission electron microscopy (STEM) images and X-ray reciprocal space mappings (RSMs) show that the films maintain a tetragonal phase with coherent epitaxial compressive strain ~2% in the NiO2 planes relative to the bulk. Our findings pave the way for comprehensive investigations of nickelate superconductors under ambient pressure conditions and for exploring superconductivity at higher transition temperature through strain engineering in heterostructures.

cond-mat.supr-con↗

arXiv2024

Gigantic-oxidative atomic-layer-by-layer epitaxy for artificially designed complex oxides

In designing material functionalities for transition metal oxides, lattice structure and d-orbital occupancy are key determinants. However, the modulation of these two factors is inherently limited by the need to balance thermodynamic stability, growth kinetics, and stoichiometry precision, particularly for metastable phases. We introduce a methodology, namely the gigantic-oxidative atomic-layer-by-layer epitaxy (GOALL-Epitaxy), enhancing oxidation power 3-4 orders of magnitude beyond conventional pulsed laser deposition (PLD) and oxide molecular beam epitaxy (OMBE), while ensuring atomic-layer-by-layer growth of designed complex structures. Thermodynamic stability is markedly augmented with stronger oxidation at elevated temperatures, whereas growth kinetics is sustained by laser ablation at lower temperatures. We demonstrate the accurate growth of complex nickelates and cuprates, especially an artificially designed structure with alternating single and double NiO2 layers possessing distinct nominal d-orbital occupancy, as a parent of high-temperature superconductor. The GOALL-Epitaxy enables material discovery within the vastly broadened growth parameter space.

cond-mat.str-el↗

arXiv2024

Growth of two-inch free-standing heteroepitaxial diamond on Ir/YSZ/Si (001) substrates via laser-patterned templates

In this paper, 2-inch free-standing diamonds were prepared by using heteroepitaxy on composite Ir/YSZ/Si (001) substrates. To release stress, patterned templates were fabricated using laser etching after the initial growth of 50-nm-diamond. Then, the subsequent growth was completed on a patterned template. The full width at half maximum of the diamond (400) and (311) X-ray rocking curves were 313.5 and 359.3 arcsecs, respectively. Strong band-edge emission in the cathodoluminescence spectrum of the resulting diamond revealed excellent crystalline quality. Furthermore, the 2D mapping of Raman spectra was conducted on a $2 mm \times 2 mm$ area located at the center of the 2-inch sample with a thickness of $400 μm$. The result showed an average peak width of $2.85 \pm 0.36 cm^{-1}$ and residual stress of $-0.03 \pm 0.37 GPa$. The dislocation density, determined by counting etching pits generated from $ H_2/O_2$ plasma etching, was estimated to be around $2.2 \times 10^7 cm^{-2}$. These results evidence that the laser-patterned method can effectively release stress during the growth of large-size diamonds, offering a simpler and more cost-effective alternative to the traditional photolithography-patterned scheme.

cond-mat.mtrl-sci↗