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Guangfu Luo

Publications and source records attributed to Guangfu Luo.

17 recordsLinked to original sources

Atomistic modeling of molecular beam epitaxy growth of SrTiO3 and Sr2TiO4 thin films

Molecular beam epitaxy (MBE) is renowned for its potential for atomic layer control, but unexpected growth mechanisms can potentially compromise this level of precision. In this study, we employ first-principles calculations to investigate the atomistic processes governing the MBE growth of perovskite SrTiO3 and Ruddlesden-Popper Sr2TiO4 films on a SrTiO3 substrate. We systematically explore the potential molecular species in the gas phase and their reactions and diffusion dynamics on the film surfaces and layer edges. Our analyses uncover three mechanisms of importance for understanding this type of growth. First, oxygen vacancies can be dynamically induced during surface diffusion on defect-free substrate and noticeably accelerate the diffusion processes. Second, while the SrO layer is expected to grow in a single-layer growth mode, the presence of potential TiSr defects may promote the formation of SrO islands. Lastly, adsorbed Ti atoms and TiO2 molecules on the SrO bilayer can insert into SrO bilayers, resulting in an unexpected growth sequence. These findings may have broader implications for the MBE growth of metal oxide films and provide guidance for achieving improved control over their growth processes.

cond-mat.mtrl-sci

Atomistic Insights into the Degradation of Metal Phthalocyanine Catalysts during Oxygen Reduction Reaction

Oxygen reduction catalysts frequently suffer from degradation under harsh operating conditions, and the limited understanding of the underlying mechanisms hampers the development of effective mitigation strategies. In this study, we integrate first-principles calculations with a time-dependent microkinetic model to investigate the deactivation pathways of six highly active metal phthalocyanines (MPc, M = Cr, Mn, Fe, Ru, Rh, and Ir) during the oxygen reduction reaction (ORR). We quantitatively assess the ORR processes, hydrogen peroxide generation, radical generation, and three primary degradation mechanisms, namely carbon oxidation, nitrogen protonation, and demetallation, through a reaction network involving 40 chemical species and 75 elementary reactions. Our findings reveal that the dominant degradation mechanism varies significantly across the MPcs. Under typical alkaline conditions, the primary byproducts arise from carbon oxidation, driven by .OH radical attack and structural reorganization of surface adsorbates, and from protonation at either the metal center or nitrogen sites. In the kinetics-controlled region, the ORR activity follows the order of RhPc > IrPc > FePc > MnPc > RuPc > CrPc. Notably, RhPc and IrPc demonstrate both higher ORR activity and greater stability than the widely studied FePc under elevated potentials.

cond-mat.mtrl-sci

Exploration of Zeolites as High-Performance Electrode Protective Layers for Alkali-Metal Batteries

The electrode-electrolyte interfaces play pivotal roles in alkali-metal batteries, necessitating superior electrochemical stability, excellent electrical insulation, and high ionic conductivity. This study proposes using zeolites as interfacial protective layers owing to their inherently high stability with both alkali metals and high-voltage cathodes, as well as exceptionally wide bandgaps that minimize electron transport. To further pinpoint zeolites with rapid ionic diffusivity among their versatile structures, we devise a universal approach to explore diffusion dynamics in arbitrary structures. Through first-principles calculations, we identify the diffusion networks of Li+, Na+, and K+ in twenty-two, seventeen, and four zeolites, respectively. Eventually, we predict five, seven, and three zeolites as suitable interfacial protective layer for lithium-, sodium-, and potassium-metal batteries, respectively, each characterized by a diffusion barrier below 0.3 eV. This research automates the exploration of diffusion dynamics in complex materials and underscores the significant potential of zeolites as interfacial protective layers in alkali-metal batteries.

cond-mat.mtrl-sci

Designing Bimetallic Nanoparticle Catalysts via Tailored Surface Segregation

Bimetallic nanoparticles serve as a vital class of catalysts with tunable properties suitable for diverse catalytic reactions, yet a comprehensive understanding of their structural evolution under operational conditions as well as their optimal design principles remains elusive. In this study, we unveil a prevalent surface segregation phenomenon in approximately 100 platinum-group-element-based bimetallic nanoparticles through molecular dynamics simulations and derive a thermodynamic descriptor to predict this behavior. Building on the generality and predictability of surface segregation, we propose leveraging this phenomenon to intentionally enrich the nanoparticle surface with noble-metal atoms, thereby significantly reducing their usage while maintaining high catalytic activity and stability. To validate this strategy, we investigate dozens of platinum-based bimetallic nanoparticles for propane dehydrogenation catalysis using first-principles calculations. Through a systematic examination of the catalytic sites on nanoparticle surfaces, we eventually identify several candidates featuring with stable Pt-enriched surface and superior catalytic activity, confirming the feasibility of this approach.

cond-mat.mtrl-sci

Stabilizing Single-Atom Catalysts on Metastable Phases of Transition Metal Dichalcogenides

Single-atom catalysts have attracted significant attention due to their exceptional atomic utilization and high efficiency in a range of catalytic reactions. However, these systems often face thermodynamic instability, leading to agglomeration under operational conditions. In this study, we investigate the interactions of twelve types of catalytic atoms (Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, Au, and Bi) on three crystalline phases (1T, 1T', and 2H) of six transition metal dichalcogenide layers (MoS2, MoSe2, MoTe2, WS2, WSe2, and WTe2) based on first-principles calculations. We ultimately identify 82 stable single-atom systems that thermodynamically prevent the formation of metal clusters on these substrates. Notably, our findings reveal that the metastable 1T and 1T' phases significantly enhance the binding strength with single atoms and promote their thermodynamic stability. This research offers valuable insights into the design of stable single-atom systems and paves the way for discovering innovative catalysts in the future.

cond-mat.mtrl-sci

Spontaneous Donor Defects and Voltage-Assisted Hole Doping in Beta-Gallium Oxides under Multiple Epitaxy Conditions

Beta-phase gallium oxide (beta-Ga2O3) is prone to the spontaneous formation of donor defects but poses a formidable challenge in achieving high-quality p-type doping, mainly due to its exceptionally low valence band maximum (VBM). In this study, we utilize first-principles computations to investigate the origin of spontaneous donor defects in beta-Ga2O3 grown by three typical techniques: molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD), and halide vapor phase epitaxy (HVPE). Our findings elucidate that the primary donor defects vary with the growth techniques, specifically Gai3+ for MBE, Hi+ and CGa+ for MOCVD, and (2VGa+Gai+2VO)+ and ClO+ for HVPE under unintentionally doped conditions. Employing a theoretically proposed voltage-assisted doping method, we computationally demonstrate that the dominant spontaneous donors can be significantly reduced accompanied by a noticeable increase in acceptors, leading to a stepwise reduction of Fermi level to 0.52, 0.88, and 2.10 eV above VBM for the MOCVD, HVPE, and MBE methods, and a hole concentration of 8.5*10^17, 8.7*10^11, and 2.7*10^-9 cm-3, respectively, at room temperature without the use of external dopants. By introducing Mg doping, we further reduce the Fermi level for both the MBE and HVPE experiments.

cond-mat.mtrl-sci

Harnessing Zn-Volatility for Compositional Tuning in PtZn Nanoalloy Catalysts

Bimetallic nanoalloys have gained extensive attention due to their tunable properties and wide range of catalytic applications. However, achieving good compositional control in nanoalloy catalysts remains a formidable challenge. In this work, we demonstrate that heat treatment can be used to tune the composition of Pt-Zn nanoalloy catalysts, leveraging the volatile nature of zinc to enhance their performance in propane dehydrogenation. Through identical location (scanning) transmission electron microscopy (IL-(S)TEM) using an in-situ EM gas cell, as well as other complementary techniques, we observed that the zinc content of the Pt-Zn nanoalloy particles decreased over time of the heat treatment under hydrogen. The rate of change depends on the original composition of the particles, as well as the heat treatment conditions such as temperature and flow rate. Our experimental results and theoretical calculations suggest that Zn in the intermetallic phase might be more stable, providing an opportunity for precise tuning the nanoparticle compositions. This approach presents a viable strategy for developing better Pt-Zn catalysts for propane dehydrogenation.

physics.app-ph

High-Temperature Effects for Transition State Calculations in Solids

Transition state calculation is a critical technique to understand and predict versatile dynamical phenomena in solids. However, the transition state results obtained at zero Kelvin are often utilized for prediction or interpretation of dynamical processes at high temperatures, and the error bars of such approximation are largely unknown. In this benchmark study, all the major temperature effects including lattice expansion, lattice vibration, electron excitation, and band-edge shift are evaluated with first-principles calculations for defects diffusion in solids. With inclusion of these temperature effects, the notable discrepancies between theoretical predictions at zero Kelvin and the experimental diffusivities at high temperatures are dramatically reduced. Particularly, we find that the lattice expansion and lattice vibration are dominant factors lowering the defect formation energies and hopping barriers at high temperatures, but the electron excitation exhibits minor effects. In sharp contrast to typical assumption, the attempt frequency with lattice expansion and vibration varies significantly with materials: several THz for aluminum bulk but surprisingly over 500 THz for 4H-SiC. For defects in semiconductors, the band-edge shift is also significant at high temperatures and plays a vital role in the defect diffusion. We expect this study would help accurately predict the dynamical processes at high temperatures.

cond-mat.mtrl-sci

Decoding the Mechanisms of Reversibility Loss in Rechargeable Zinc-Air Batteries

Attaining high reversibility of electrodes and electrolyte is essential for the longevity of secondary batteries. Rechargeable zinc-air batteries (RZABs), however, encounter drastic irreversible changes in the zinc anodes and air cathodes during cycling. To uncover the mechanisms of reversibility loss in RZABs, we investigate the evolution of zinc anode, alkaline electrolyte, and air electrode through experiments and first-principles calculations. Morphology diagrams of zinc anodes under versatile operating conditions reveal that the nano-sized mossy zinc dominates the later cycling stage. Such anodic change is induced by the increased zincate concentration due to hydrogen evolution, which is catalyzed by the mossy structure and results in oxide passivation on electrodes, and eventually leads to low true Coulombic efficiencies and short lifespans of batteries. Inspired by these findings, we finally present a novel overcharge-cycling protocol to compensate the Coulombic efficiency loss caused by hydrogen evolution and significantly extend the battery life.

cond-mat.mtrl-sci

Reverse Doping Asymmetry in Semiconductor Thin Films Using External Voltage

Doping asymmetry is a notable phenomenon with semiconductors and a particularly longstanding challenge limiting the applications of most wide-band-gap semiconductors, which are inherent of spontaneous heavy n- or p-type doping because of their extreme band edges. This study theoretically shows that by applying a proper external voltage on materials during their growth or doping processes, we can largely tune the band edges and consequently reverse the doping asymmetry in semiconductor thin films. We take zinc oxide as a touchstone and computationally demonstrate that this voltage-assisted-doping approach efficiently suppresses the spontaneous n-type defects by around four orders under three distinct growth conditions and successfully generates p-type zinc oxide up to the lowest acceptor levels. The proposed approach is insensitive to materials, growth conditions, or defects origins, and thus offers a general solution to the doping asymmetry in semiconductor thin films.

cond-mat.mtrl-sci

Structural Feature in Dynamical Processes Accelerated Transition State Calculations

Minimum energy path (MEP) search is a vital but often very time-consuming method to predict the transition states of versatile dynamic processes in chemistry, physics, and materials science. In this study, we reveal that the chemical bond lengths in the MEP structures, including those directly involved in the dynamical processes, largely resemble those in the stable initial and final states. Based on this discovery, we propose an adaptive semi-rigid body approximation (ASRBA) to construct a physically reasonable initial guess for the MEP structures, which can be further optimized by the nudged elastic band method. Examination of several distinct dynamical processes in bulk, on crystal surface, and through two-dimensional system show that the transition state calculations based on the ASRBA results are robust and significantly faster than those based on the popular linear interpolation and image-dependent pair potential methods.

cond-mat.mtrl-sci

Materials Discovery of Stable and Nontoxic Halide Perovskite Materials for High-Efficiency Solar Cells

Two critical limitations of organic-inorganic lead halide perovskite materials for solar cells are their poor stability in humid environments and inclusion of toxic lead. In this study, high-throughput density functional theory (DFT) methods are used to computationally model and screen 1845 halide perovskites in search of new materials without these limitations that are promising for solar cell applications. This study focuses on finding materials that are comprised of nontoxic elements, stable in a humid operating environment, and have an optimal bandgap for one of single junction, tandem Si-perovskite, or quantum dot-based solar cells. Single junction materials are also screened on predicted single junction photovoltaic (PV) efficiencies exceeding 22.7%, which is the current highest reported PV efficiency for halide perovskites. Generally, these methods qualitatively reproduce the properties of known promising nontoxic halide perovskites that have either been experimentally evaluated or predicted from theory. From a set of 1845 materials, 15 materials pass all screening criteria for single junction cell applications, 13 of which have not been previously investigated, such as (CH3NH3)0.75Cs0.25SnI3, ((NH2)2CH)Ag0.5Sb0.5Br3, CsMn0.875Fe0.125I3, ((CH3)2NH2)Ag0.5Bi0.5I3, and ((NH2)2CH)0.5Rb0.5SnI3. These materials, together with others predicted in this study, may be promising candidate materials for stable, highly efficient, and non-toxic perovskite-based solar cells.

cond-mat.mtrl-sci

Transition state redox during dynamical processes in semiconductors and insulators

Activation barriers associated with ion diffusion and chemical reactions are vital to understand and predict a wide range of phenomena, such as material growth, ion transport, and catalysis. In the calculation of activation barriers for non-redox processes in semiconductors and insulators, it has been widely assumed that the charge state remains fixed to that of the initial electronic ground state throughout a dynamical process. In this work, we demonstrate that this assumption is generally inaccurate and that a rate-limiting transition state can have a different charge state from the initial ground state. This phenomenon can significantly lower the activation barrier of dynamical process that depends strongly on charge state, such as carbon vacancy diffusion in 4H-SiC. With inclusion of such transition state redox, the activation barrier varies continuously with Fermi level, in contrast to the step-line feature predicted by the traditional fixed-charge assumption. In this study, a straightforward approach to include the transition state redox effect is provided, the typical situations where the effect plays a significant role are identified, and the relevant electron dynamics are discussed.

cond-mat.mtrl-sci

Ab-initio modeling of electrolyte molecule Ethylene Carbonate decomposition reaction on Li(Ni,Mn,Co)O2 cathode surface

Electrolyte decomposition reactions on Li-ion battery electrodes contribute to the formation of solid electrolyte interphase (SEI) layers. These SEI layers are one of the known causes for the loss in battery voltage and capacity over repeated charge/discharge cycles. In this work, density functional theory (DFT)-based ab-initio calculations are applied to study the initial steps of the decomposition of the organic electrolyte component ethylene carbonate (EC) on the (10-14) surface of a layered Li(Nix,Mny,Co1-x-y)O2 (NMC) cathode crystal, which is commonly used in commercial Li-ion batteries. The effects on the EC reaction pathway due to dissolved Li+ ions in the electrolyte solution and different NMC cathode surface terminations containing absorbed hydroxyl -OH or fluorine -F species are explicitly considered. We predict a very fast chemical reaction consisting of an EC ring-opening process on the bare cathode surface, the rate of which is independent of the battery operation voltage. This EC ring-opening reaction is unavoidable once the cathode material contacts with the electrolyte because this process is purely chemical rather than electrochemical in nature. The -OH and -F adsorbed species display a passivation effect on the surface against the reaction with EC, but the extent is limited except for the case of -OH bonded to a surface transition metal atom. Our work implies that the possible rate-limiting steps of the electrolyte molecule decomposition are the reactions on the decomposed organic products on the cathode surface rather than on the bare cathode surface.

cond-mat.mtrl-sci

Understanding and reducing deleterious defects in metastable alloy GaAsBi

Technological applications of novel metastable materials are frequently inhibited by abundant defects residing in these materials. Using first-principles methods we investigate the point defect thermodynamics and phase segregation in the technologically-important metastable alloy GaAsBi. Our calculations predict defect energy levels in good agreement with abundant previous experiments and clarify the defect structures giving rise to these levels. We find that vacancies in some charge states become metastable or unstable with respect to antisite formation, and this instability is a general characteristic of zincblende semiconductors with small ionicity. The dominant point defects degrading electronical and optical performances are predicted to be As$_G$$_a$, Bi$_G$$_a$, Bi$_G$$_a$+Bi$_A$$_s$, As$_G$$_a$+Bi$_A$$_s$, V$_G$$_a$ and V$_G$$_a$+Bi$_A$$_s$, of which the first-four and second-two defects are minority-electron and minority-hole traps, respectively. V$_G$$_a$ is also found to play a critical role in controlling the metastable Bi supersaturation through mediating Bi diffusion and clustering. To reduce the influences of these deleterious defects, we suggest shifting the growth away from As-rich condition and/or using hydrogen passivation to reduce the minority-carrier traps. We expect this work to aid in the applications of GaAsBi to novel electronic and optoelectronic devices, and shine a light on controlling the deleterious defects in other metastable materials.

cond-mat.mtrl-sci

First-principles Predictions of Electronic Properties of GaAs1-x-yPyBix and GaAs1-x-yPyBix-based Heterojunctions

Significant efficiency droop is a major concern for light-emitting diodes and laser diodes operating at high current density. Recent study has suggested that heavily Bi-alloyed GaAs can decrease the non-radiative Auger recombination and therefore alleviate the efficiency droop. Using density functional theory, we studied a newly fabricated quaternary alloy, GaAs1-x-yPyBix, which can host significant amounts of Bi, through calculations of its band gap, spin-orbit splitting, and band offsets with GaAs. We found that the band gap changes of GaAs1-x-yPyBix relative to GaAs are determined mainly by the local structural changes around P and Bi atoms rather than their electronic structure differences. To obtain alloy with lower Auger recombination than GaAs bulk, we identified the necessary constraints on the compositions of P and Bi. Finally, we demonstrated that GaAs/GaAs1-x-yPyBix heterojunctions with potentially low Auger recombination can exhibit small lattice mismatch and large enough band offsets for strong carrier confinement. This work shows that the electronic properties of GaAs1-x-yPyBix are potentially suitable for high-energy infrared light-emitting diodes and laser diodes with improved efficiency.

cond-mat.mtrl-sci

Functionalized Graphene for High Performance Two-dimensional Spintronics Devices

Using first-principles calculations, we explore the possibility of functionalized graphene as high performance two-dimensional spintronics device. Graphene functionalized with O on one side and H on the other side in the chair conformation is found to be a ferromagnetic metal with a spin-filter efficiency up to 85% at finite bias. The ground state of graphene semi-functionalized with F in the chair conformation is an antiferromagnetic semiconductor, and we construct a magnetoresistive device from it by introducing a magnetic field to stabilize its ferromagnetic metallic state. The resulting room-temperature magnetoresistance is up to 5400%, which is one order of magnitude larger than the available experimental values.

cond-mat.mtrl-sci