arXiv subjects

Guangyu Zhang

Publications and source records attributed to Guangyu Zhang.

67 records · Page 4Linked to original sources

arXiv2017

From Type-II Triply Degenerate Nodal Points and Three-Band Nodal Rings to Type-II Dirac Points in Centrosymmetric Zirconium Oxide

Using first-principles calculations, we report that ZrO is a topological material with the coexistence of three pairs of type-II triply degenerate nodal points (TNPs) and three nodal rings (NRs), when spin-orbit coupling (SOC) is ignored. Noticeably, the TNPs reside around Fermi energy with large linear energy range along tilt direction (> 1 eV) and the NRs are formed by three strongly entangled bands. Under symmetry-preserving strain, each NR would evolve into four droplet-shaped NRs before fading away, producing distinct evolution compared with that in usual two-band NR. When SOC is included, TNPs would transform into type-II Dirac points while all the NRs have gaped. Remarkably, the type-II Dirac points inherit the advantages of TNPs: residing around Fermi energy and exhibiting large linear energy range. Both features facilitate the observation of interesting phenomena induced by type-II dispersion. The symmetry protections and low-energy Hamiltonian for the nontrivial band crossings are discussed.

cond-mat.mtrl-sci↗

arXiv2017

Emergence of Tertiary Dirac Points in Graphene Moiré Superlattices

The electronic structure of a crystalline solid is largely determined by its lattice structure. Recent advances in van der Waals solids, artificial crystals with controlled stacking of two-dimensional (2D) atomic films, have enabled the creation of materials with novel electronic structures. In particular, stacking graphene on hexagonal boron nitride (hBN) introduces moiré superlattice that fundamentally modifies graphene's band structure and gives rise to secondary Dirac points (SDPs). Here we find that the formation of a moiré superlattice in graphene on hBN yields new, unexpected consequences: a set of tertiary Dirac points (TDPs) emerge, which give rise to additional sets of Landau levels when the sample is subjected to an external magnetic field. Our observations hint at the formation of a hidden Kekulé superstructure on top of the moiré superlattice under appropriate carrier doping and magnetic fields.

cond-mat.mes-hall↗

arXiv2017

Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES

In van der Waals heterostructures, the periodic potential from the Moiré superlattice can be used as a control knob to modulate the electronic structure of the constituent materials. Here we present a nanoscale angle-resolved photoemission spectroscopy (Nano-ARPES) study of transferred graphene/h-BN heterostructures with two different stacking angles of 2.4° and 4.3° respectively. Our measurements reveal six replicas of graphene Dirac cones at the superlattice Brillouin zone (SBZ) centers. The size of the SBZ and its relative rotation angle to the graphene BZ are in good agreement with Moiré superlattice period extracted from atomic force microscopy (AFM) measurements. Comparison to epitaxial graphene/h-BN with 0° stacking angles suggests that the interaction between graphene and h-BN decreases with increasing stacking angle.

cond-mat.mtrl-sci↗

arXiv2016

Second generation Dirac cones and inversion symmetry breaking induced gaps in graphene/hexagonal boron nitride

Graphene/h-BN has emerged as a model van der Waals heterostructure, and the band structure engineering by the superlattice potential has led to various novel quantum phenomena including the self-similar Hofstadter butterfly states. Although newly generated second generation Dirac cones (SDCs) are believed to be crucial for understanding such intriguing phenomena, so far fundamental knowledge of SDCs in such heterostructure, e.g. locations and dispersion of SDCs, the effect of inversion symmetry breaking on the gap opening, still remains highly debated due to the lack of direct experimental results. Here we report first direct experimental results on the dispersion of SDCs in 0$^\circ$ aligned graphene/h-BN heterostructure using angle-resolved photoemission spectroscopy. Our data reveal unambiguously SDCs at the corners of the superlattice Brillouin zone, and at only one of the two superlattice valleys. Moreover, gaps of $\approx$ 100 meV and $\approx$ 160 meV are observed at the SDCs and the original graphene Dirac cone respectively. Our work highlights the important role of a strong inversion symmetry breaking perturbation potential in the physics of graphene/h-BN, and fills critical knowledge gaps in the band structure engineering of Dirac fermions by a superlattice potential.

cond-mat.mtrl-sci↗

arXiv2015

Switchable friction enabled by nanoscale self-assembly on graphene

Graphene monolayers are known to display domains of anisotropic friction with twofold symmetry and anisotropy exceeding 200 percent. This anisotropy has been thought to originate from periodic nanoscale ripples in the graphene sheet, which enhance puckering around a sliding asperity to a degree determined by the sliding direction. Here we demonstrate that these frictional domains derive not from structural features in the graphene, but from self-assembly of atmospheric adsorbates into a highly regular superlattice of stripes with period 4 to 6 nm. The stripes and resulting frictional domains appear on monolayer and multilayer graphene on a variety of substrates, as well as on exfoliated flakes of hexagonal boron nitride. We show that the stripe-superlattices can be reproducibly and reversibly manipulated with submicron precision using a scanning probe microscope, allowing us to create arbitrary arrangements of frictional domains within a single flake. Our results suggest a revised understanding of the anisotropic friction observed in graphene and bulk graphite in terms of atmospheric adsorbates.

cond-mat.mes-hall↗

arXiv2014

Observation of an intrinsic bandgap and Landau level renormalization in graphene/boron-nitride heterostructures

Van der Waals heterostructures formed by assembling different two-dimensional atomic crystals into stacks can lead to many new phenomena and device functionalities. In particular, graphene/boron-nitride heterostructures have emerged as a very promising system for band engineering of graphene. However, the intrinsic value and origin of the bandgap in such heterostructures remain unresolved. Here we report the observation of an intrinsic bandgap in epitaxial graphene/boron-nitride heterostructures with zero crystallographic alignment angle. Magneto-optical spectroscopy provides a direct probe of the Landau level transitions in this system and reveals a bandgap of ~ 38 meV (440 K). Moreover, the Landau level transitions are characterized by effective Fermi velocities with a critical dependence on specific transitions and magnetic field. These findings highlight the important role of many body interactions in determining the fundamental properties of graphene heterostructures.

cond-mat.mes-hall↗

arXiv2014

Gate-dependent Pseudospin Mixing in Graphene/Boron Nitride Moire Superlattices

Electrons in graphene are described by relativistic Dirac-Weyl spinors with a two-component pseudospin1-12. The unique pseudospin structure of Dirac electrons leads to emerging phenomena such as the massless Dirac cone2, anomalous quantum Hall effect2, 3, and Klein tunneling4, 5 in graphene. The capability to manipulate electron pseudospin is highly desirable for novel graphene electronics, and it requires precise control to differentiate the two graphene sub-lattices at atomic level. Graphene/boron nitride (graphene/BN) Moire superlattice, where a fast sub-lattice oscillation due to B-N atoms is superimposed on the slow Moire period, provides an attractive approach to engineer the electron pseudospin in graphene13-18. This unusual Moire superlattice leads to a spinor potential with unusual hybridization of electron pseudospins, which can be probed directly through infrared spectroscopy because optical transitions are very sensitive to excited state wavefunctions. Here, we perform micro-infrared spectroscopy on graphene/BN heterostructure and demonstrate that the Moire superlattice potential is dominated by a pseudospin-mixing component analogous to a spatially varying pseudomagnetic field. In addition, we show that the spinor potential depends sensitively on the gate-induced carrier concentration in graphene, indicating a strong renormalization of the spinor potential from electron-electron interactions. Our study offers deeper understanding of graphene pseudospin structure under spinor Moire potential, as well as exciting opportunities to control pseudospin in two-dimensional heterostructures for novel electronic and photonic nanodevices.

cond-mat.mes-hall↗

arXiv2012

Bayesian modeling longitudinal dyadic data with nonignorable dropout, with application to a breast cancer study

Dyadic data are common in the social and behavioral sciences, in which members of dyads are correlated due to the interdependence structure within dyads. The analysis of longitudinal dyadic data becomes complex when nonignorable dropouts occur. We propose a fully Bayesian selection-model-based approach to analyze longitudinal dyadic data with nonignorable dropouts. We model repeated measures on subjects by a transition model and account for within-dyad correlations by random effects. In the model, we allow subject's outcome to depend on his/her own characteristics and measure history, as well as those of the other member in the dyad. We further account for the nonignorable missing data mechanism using a selection model in which the probability of dropout depends on the missing outcome. We propose a Gibbs sampler algorithm to fit the model. Simulation studies show that the proposed method effectively addresses the problem of nonignorable dropouts. We illustrate our methodology using a longitudinal breast cancer study.

stat.AP↗

arXiv2008

Protein Microarrays with Carbon Nanotubes as Multi-Color Raman Labels

Detection of biomolecules is important in proteomics and clinical diagnosis and treatment of diseases. Here, we apply functionalized, macromolecular, single walled carbon nanotubes SWNTs as multi-color Raman labels to protein arrays for highly sensitive, multiplexed protein detection. Raman detection utilizes the sharp peaks of SWNTs with minimal background interference, affording a high signal to noise ratio needed for ultra-sensitive detection. Surface-enhanced Raman scattering SERS combined with the strong resonance Raman intensity of SWNTs, affords detection sensitivity down to 1 fM, a three order of magnitude improvement over most of reported fluorescence-based protein detections. We show that human autoantibodies to Proteinase 3 aPR3, a biomarker for the autoimmune disease Wegeners granulomatosis, is detected by Raman in human serum up to a 107 dilution. Moreover, SWNT Raman tags are stable against photobleaching and quenching, and by conjugating different antibodies to pure 12C and 13C SWNT isotopes, we demonstrate two-color SWNT Raman-based protein detection in a multiplexed fashion.

cond-mat.mtrl-sci↗

arXiv2008

Highly Conducting Graphene Sheets and Langmuir-Blodgett Films

Graphene is an intriguing material with properties that are distinct from those of other graphitic systems. The first samples of pristine graphene were obtained by peeling off and epitaxial growth. Recently, the chemical reduction of graphite oxide was used to produce covalently functionalized single-layer graphene oxide. However, chemical approaches for the large-scale production of highly conducting graphene sheets remain elusive. Here, we report that the exfoliation-reintercalation-expansion of graphite can produce high-quality single-layer graphene sheets stably suspended in organic solvents. The graphene sheets exhibit high electrical conductance at room and cryogenic temperatures. Large amounts of graphene sheets in organic solvents are made into large transparent conducting films by Langmuir-Blodgett assembly in a layer-by-layer manner. The chemically derived high quality graphene sheets could lead to future scalable graphene devices.

cond-mat.mtrl-sci↗

arXiv2006

Hydrogenation and Hydro-Carbonation and Etching of Single-Walled Carbon Nanotubes

We present a systematic experimental investigation of the reactions between hydrogen plasma and single-walled carbon nanotubes (SWNTs) at various temperatures. Microscopy, infrared (IR) and Raman spectroscopy and electrical transport measurements are carried out to investigate the properties of SWNTs after hydrogenation. Structural deformations, drastically reduced electrical conductance and increased semiconducting nature of SWNTs upon sidewall hydrogenation are observed. These changes are reversible upon thermal annealing at 500C via dehydrogenation. Harsh plasma or high temperature reactions lead to etching of nanotube likely via hydro-carbonation. Smaller SWNTs are markedly less stable against hydro-carbonation than larger tubes. The results are fundamental and may have implications to basic and practical applications including hydrogen storage, sensing, band-gap engineering for novel electronics and new methods of manipulation, functionalization and etching of nanotubes.

cond-mat.mtrl-sci↗

arXiv2005

Ultra-High Yield Growth of Vertical Single-Walled Carbon Nanotubes: Hidden Roles of Hydrogen and Oxygen

An oxygen assisted hydrocarbon chemical vapor deposition (CVD) method is developed to afford large-scale highly reproducible ultra high-yield growth of vertical single-walled carbon nanotubes (SWNT). It is revealed that reactive hydrogen (H)-species, inevitable in hydrocarbon-based growth, are damaging to the formation of sp2-like SWNTs. The addition of oxygen scavenges H-species and provides a powerful control over the C/H ratio to favor SWNT growth. The revelation of the roles played by hydrogen and oxygen leads to a unified and universal optimum growth condition for SWNTs. Further, a versatile method is developed to form vertical SWNT films on any substrate, lifting a major substrate-type limitation for aligned SWNTs.

cond-mat.mtrl-sci↗

arXiv2005

Theoretical study of polarization tracking in satellite quantum key distribution

The BB84 and B92 protocols based on polarization coding are usually used in free-space quantum key distribution. Polarization tracking technique is one of the key techniques in the satellite quantum key distribution. Because the photon polarization state will be changed as a result of the satellite movement, both the transmitter and receiver need to have the ability to track the polarization orientation variation to accomplish the quantum cryptography protocols. In this paper, the polarization tracking principles are analyzed based on Faraday effect and the half-wave plate. The transforms of six photon polarization states in three conjugative bases are given and the quantum key coding principles based on the polarization tracking are analyzed for the BB84 and B92 protocols.

quant-ph↗