arXiv subjects

Guanyong Wang

Publications and source records attributed to Guanyong Wang.

9 recordsLinked to original sources

arXiv2026

Scalable Spin Qubit Architecture with Donor-Cluster Arrays in Silicon

Spin qubits in silicon donors offer a promising platform for quantum computing due to their long coherence times and semiconductor compatibility. However, scaling donor-based spin qubits in silicon is fundamentally challenged by frequency crowding, crosstalk, and the tight tolerances on donor placement in conventional single-donor architectures.To overcome this, we introduce a paradigm based on a two-dimensional array of phosphorus-donor clusters, in which multiple donors share a bound electron. The natural hyperfine distribution within each cluster enables individual addressability of the electron and nuclear spins, while tunable exchange interactions between clusters mediate local all-to-all connectivity. We present a universal control protocol achieving gate fidelities exceeding 99% for both intra-cluster and inter-cluster multi-qubit operations, with crosstalk effectively suppressed. The architecture natively supports efficient quantum error correction, including bias-tailored codes that exploit the intrinsic noise bias of spin qubits. Furthermore, its modular design is compatible with long-range coupling via electron shuttling for large-scale integration. This donor-cluster array architecture establishes a robust and hardware-efficient pathway towards scalable, fault-tolerant quantum computing in silicon.

quant-ph↗

arXiv2025

Demonstration of quantum error detection in a silicon quantum processor

Quantum error detection is essential in realizing large-scale universal quantum computation, especially for quantum error correction (QEC). However, key elements for FTQC have yet to be realized in silicon qubits. Here, we demonstrate quantum error detection on a donor-based silicon quantum processor comprising four-nuclear spin qubits and one electron spin as an auxiliary qubit. The entanglement capability of this system is validated through the establishment of two-qubit Bell state entanglement between the nuclear spins and the generation of a four-qubit Greenberger-Horne-Zeilinger (GHZ) state, achieving a GHZ state fidelity of 88.5(2.3)%. Furthermore, by executing a four-qubit error detection circuit with the stabilizers, we successfully detect arbitrary single-qubit errors. The encoded Bell state entanglement information is recovered by performing the Pauli-frame update (PFU) via postprocessing. Based on the detected errors, we identify strongly biased noise in our system. Our results mark a significant advance toward FTQC in silicon spin qubits.

quant-ph↗

arXiv2025

Quantum-size effect induced Andreev bound states in ultrathin metallic islands proximitized by a superconductor

While Andreev bound states (ABSs) have been realized in engineered superconducting junctions, their direct observation in normal metal/superconductor heterostructures-enabled by quantum confinement-remains experimentally elusive. Here, we report the detection of ABSs in ultrathin metallic islands (Bi, Ag, and SnTe) grown on the s-wave superconductor NbN. Using high-resolution scanning tunneling microscopy and spectroscopy, we clearly reveal in-gap ABSs with energies symmetric about the Fermi level. While the energies of these states show no position dependence, their wave functions exhibit spatial oscillations, demonstrating a quantum size effect. Both the energy levels and spatial distribution of the ABSs can be reproduced by our effective model in which a metallic island is coupled to the superconducting substrate via the proximity effect. We demonstrate that the coupling strength plays a critical role in determining the ABS energies. Our work introduces a novel physical platform for implementing ABSs, which hold promise for significant device applications.

cond-mat.supr-con↗

arXiv2024

Tunable topological edge states in black phosphorus-like Bi(110)

We have investigated the structures and electronic properties of ultra-thin Bi(110) films grown on an s-wave superconductor substrate using low-temperature scanning tunneling microscopy and spectroscopy. Remarkably, our experimental results validate the theoretical predictions that the manipulation of Bi(110) surface atom buckling can control the topological phase transition. Notably, we have observed robust unreconstructed edge states at the edges of both 3-bilayer (BL) and 4-BL Bi(110) films, with the 4-BL film displaying stronger edge state intensity and a smaller degree of atomic buckling. First-principle calculations further substantiate these findings, demonstrating a gradual reduction in buckling as the film thickness increases, with average height differences between two Bi atoms of approximately 0.19 Å, 0.10 Å, 0.05 Å, and 0.00 Å for the 1-BL, 2-BL, 3-BL, and 4-BL Bi(110) films, respectively. When Bi films are larger than 2 layers, the system changes from a trivial to a non-trivial phase. This research sets the stage for the controlled realization of topological superconductors through the superconducting proximity effect, providing a significant platform for investigating Majorana zero modes and fabricating quantum devices.

cond-mat.mtrl-sci↗

arXiv2023

Topological edge and corner states in Bi fractals on InSb

Topological materials hosting metallic edges characterized by integer quantized conductivity in an insulating bulk have revolutionized our understanding of transport in matter. The topological protection of these edge states is based on symmetries and dimensionality. However, only integer-dimensional models have been classified, and the interplay of topology and fractals, which may have a non-integer dimension, remained largely unexplored. Quantum fractals have recently been engineered in metamaterials, but up to present no topological states were unveiled in fractals realized in real materials. Here, we show theoretically and experimentally that topological edge and corner modes arise in fractals formed upon depositing thin layers of bismuth on an indium antimonide substrate. Scanning tunneling microscopy reveals the appearance of (nearly) zero-energy modes at the corners of Sierpiński triangles, as well as the formation of outer and inner edge modes at higher energies. Unexpectedly, a robust and sharp depleted mode appears at the outer and inner edges of the samples at negative bias voltages. The experimental findings are corroborated by theoretical calculations in the framework of a continuum muffin-tin and a lattice tight-binding model. The stability of the topological features to the introduction of a Rashba spin-orbit coupling and disorder is discussed. This work opens the perspective to novel electronics in real materials at non-integer dimensions with robust and protected topological states.

cond-mat.mes-hall↗

arXiv2021

Coexistence of Ferroelectric-like Polarization and Dirac-like Surface State in TaNiTe5

By combining angle-resolved photoemission spectroscopy (ARPES), scanning tunneling microscopy (STM), piezoresponse force microscopy (PFM) and first-principles calculations, we have studied the low-energy band structure, atomic structure and charge polarization on the surface of a topological semimetal candidate TaNiTe5. Dirac-like surface states were observed on the (010) surface by ARPES, consistent with the first-principles calculations. On the other hand, PFM reveals a switchable ferroelectric-like polarization on the same surface. We propose that the noncentrosymmetric surface reconstruction observed by STM could be the origin of the observed ferroelectric-like state in this novel material. Our findings provide a new platform with the coexistence of ferroelectric-like surface charge distribution and novel surface states.

cond-mat.mtrl-sci↗

arXiv2020

Designer spin order in diradical nanographenes

The magnetic properties of carbon materials are at present the focus of an intense research effort in physics, chemistry and materials science due to their potential applications in spintronics and quantum computations. Although the presence of spins in open-shell nanographenes has been recently confirmed, the ability to control magnetic coupling sign has remained elusive, but the most desirable. Here, we demonstrate an effective approach of engineering magnetic ground states in atomically precise open-shell bipartite/nonbipartite nanographenes using combined scanning probe techniques and mean-field Hubbard model calculations. The magnetic coupling sign between two spins has been controlled via breaking bipartite lattice symmetry of nanographenes. In addition, the exchange-interaction strength between two spins has been widely tuned by finely tailoring their spin density overlap, realizing a large exchange-interaction strength of 42 meV. Our demonstrated method provides ample opportunities for designer above-room-temperature magnetic phases and functionalities in graphene nanomaterials.

cond-mat.mes-hall↗

arXiv2017

Inversion Domain Boundary Induced Stacking and Bandstructure Diversity in Bilayer MoSe2

Interlayer rotation and stacking were recently demonstrated as effective strategies for tuning physical properties of various two-dimensional materials. The latter strategy was mostly realized in hetero-structures with continuously varied stacking orders, which obscure the revelation of the intrinsic role of a certain stacking order in its physical properties. Here, we introduce inversion-domain-boundaries into molecular-beam-epitaxy grown MoSe2 homo-bilayers, which induce unusual-fractional lattice translations to their surrounding domains, accounting for the observed diversity of large-area and uniform stacking sequences. Unusual low-symmetric stacking orders were observed using transmission electron microscopy and detailed geometries were identified by density functional theory. A linear relation was also revealed between interlayer distance and stacking energy. These stacking sequences yield various energy alignments between the valence states at Γ and K, showing stacking dependent bandgaps and valence band tail states in the measured scanning tunneling spectroscopy. These results may benefit the design of two-dimensional multilayers with manipulable stacking orders.

cond-mat.mtrl-sci↗

arXiv2016

Growth, stabilization and conversion of semi-metallic and semiconducting phases of MoTe2 monolayer by molecular-beam epitaxy

Monolayer (ML) transition-metal dichalcogenides exist in different phases, such as the hexagonal (2H) and distorted octahedral or monoclinic (1T') phases. The different structures show vastly different properties. For example, the 2H MoTe2 ML is a direct-gap semiconductor while 1T' MoTe2 is a semi-metal. It has been suggested that the formation energies between 2H and 1T' MoTe2 differ very little, so there is a high chance to tune the structures of MoTe2 and thereby to bring in new applications such as phase-change electronics. In this work, we report growth of both 2H and 1T' MoTe2 ML by molecular-beam epitaxy (MBE). We demonstrate the tunability of the structural domains in epitaxial MoTe2 by changing the growth conditions of MBE and by annealing. We present experimental and theoretical evidences showing the important role of Te surface adsorption in promoting and stabilizing the otherwise metastable 1T'-MoTe2 during MBE.

cond-mat.mtrl-sci↗