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Guido Burkard

Publications and source records attributed to Guido Burkard.

At least 19 recordsLinked to original sources

Heavy-Hole--Light-Hole Mixing and Spin--Photon Coupling in Germanium Flopping-Mode Qubits

Intrinsic spin--orbit interaction in germanium provides electrically active flopping-mode qubits without requiring magnetic-field gradients to generate spin--charge hybridization. We study double quantum dots (DQDs) with a multiband Luttinger--Kohn framework that retains heavy-hole (HH) and light-hole (LH) states on equal footing. Modeling vertical confinement with a finite confinement potential along the growth direction brings selected subbands into a regime of appreciable HH--LH mixing. This admixture activates electric-dipole spin-coupling through LH--LH and LH--HH transitions, complementing the conventional HH--HH pseudospin-flip resonance. For the parameter sets considered, these additional channels can produce larger spin--photon figures of merit than the HH--HH transition. HH--LH mixing thus supplies a tunable ingredient for qubit--cavity coupling in germanium hole-spin qubits and extends the operating regimes available to circuit-QED architectures.

cond-mat.mes-hall

Electron shuttling as a probe for charge defects

Silicon spin qubits are a leading platform for scalable quantum computing, but their performance is limited by charge noise, widely attributed to two-level fluctuators (TLFs). The location of individual TLFs is generally unknown, and existing methods to localise them does not scale favourably with device size. Here, we show that electron shuttling turns a single mobile spin into a scanning probe of individual defects. We show that by shuttling a spin over a range of distances and tracking its coherence loss, one can localise defects along the channel and constrain their switching rate and fluctuation amplitude. Because one shuttled electron sweeps an extended region, the approach scales more favourably than previous methods. Our protocol requires no additional hardware and provides a practical route to mapping the charge-defect landscape of large silicon devices, enabling defect-aware calibration and avoidance in shuttling-based architectures.

quant-ph

Reconstruction of the noise correlation spectral density from the cavity emission in a two-qubit system

A significant challenge in the field of large-scale fault-tolerant quantum computation is the influence of noise. In addition to the influence of noise on individual qubits, the smaller additional effect of noise correlations is also of high significance because correlated errors pose a challenge for quantum error correction. We describe the dynamics of two cavity-coupled qubits that are subject to correlated noise, assuming that the qubits are affected by longitudinal noise and not coupled directly. We find that the cavity emission enables the characterization of the noise correlations and describe the cases of white noise, quasi-static noise, and Ornstein-Uhlenbeck noise. For a known frequency spectrum, the reconstruction of the noise correlation spectral density from the cavity emission is possible by averaging over many different noise realizations. We demonstrate that, in the case of white noise, the noise correlation effects scale with the fifth order of the cavity-qubit coupling constant and are thus strongly suppressed compared with the case of quasi-static noise, where they scale with the third order. Furthermore, we present a method for extracting the noise correlation spectral density from the cavity emission in the case where the underlying noise type remains unidentified. This can be achieved by applying the convolution theorem.

quant-ph

Inherent flux crosstalk and coupler-driven single-qubit gates in superconducting circuits

Crosstalk refers to unwanted qubit addressing. This is particularly detrimental when scaling up quantum information systems because unintended interactions limit their overall performance. For superconducting qubits, tunable couplings and frequency tunability achieved through externally applied magnetic fluxes enable high-fidelity entangling gates; however, they also introduce crosstalk through unintended flux coupling. In this work, we investigate the impact of time-dependent external magnetic fluxes in quantized circuits on superconducting qubit couplings. We find that non-trivial cross-voltage driving emerges between capacitively linked qubits when the magnetic flux threading the SQUID loop of a qubit varies in time, in a manner analogous to Faraday's law of induction. Crucially, we show that this effect enables fast single qubit control through the coupler element in standard tunable-coupler architectures, potentially eliminating the need for individual microwave $XY$ control lines.

quant-ph

Structural, electronic, and optical properties of hexagonal GeSn from density functional theory

Unlike cubic GeSn, which requires a high Sn concentration to undergo an indirect-to-direct bandgap transition, lonsdaleite (2H) germanium is an intrinsic direct-gap semiconductor. We employ first-principles density functional theory to investigate the structural, electronic, and optical properties of 2H-Ge$_{1-x}$Sn$_{x}$ random alloys in the dilute Sn regime ($x \le 0.10$). The extended alloy disorder is modeled using 48-atom special quasirandom structure (SQS) supercells, and the coherent effective band structure is recovered via spectral band unfolding. We show that 2H-Ge$_{1-x}$Sn$_{x}$ maintains a direct bandgap at the $Γ$ point across the studied composition range, exhibiting a strong bandgap bowing that shifts the fundamental absorption edge into the mid-infrared. Evaluation of the optical transition matrix elements reveals a giant polarization anisotropy dictated by spin-orbit coupling. The fundamental transition is strongly dipole-allowed for light polarized perpendicular to the crystal $c$-axis, an optical selection rule that is robustly preserved despite the random alloy disorder breaking the symmetry. These results demonstrate that hexagonal GeSn bypasses the compositional threshold limitations of the cubic phase, providing a highly tunable direct-gap system for infrared optoelectronics.

cond-mat.mtrl-sci

Quantum communication networks with defects in silicon carbide

Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations due to photon loss. Silicon carbide (SiC) defects have emerged as a promising quantum device platform, offering strong optical transitions, long spin coherence lifetimes and the opportunity for integration with semiconductor devices. Some defects with optical transitions in the telecom range have been identified, allowing to interface with fiber networks without the need for wavelength conversion. These unique properties make SiC an attractive platform for the implementation of quantum nodes for quantum communication networks. We provide an overview of the most prominent defects in SiC and their implementation in spin-photon interfaces. Furthermore, we model an exemplary, memory-enhanced quantum communication protocol in order to extract the parameters required to surpass a direct point-to-point link performance. Based on these insights, we summarize the key steps required towards the deployment of SiC devices in large-scale quantum communication networks.

quant-ph

Spin Qubit Leapfrogging: Dynamics of shuttling electrons on top of another

Spin shuttling has crystalized as a powerful and promising tool for establishing intermediate-range connectivity in semiconductor spin-qubit devices. Although experimental demonstrations have performed exceptionally well on different materials platforms, the question of how to handle areas of low valley splitting in silicon during shuttling remains unresolved. In this work, we explore the possibility of utilizing the valley degree of freedom, particularly in regions of low valley splitting, to allow mobile spin qubits to be shuttled through an occupied stationary quantum dot, thereby leapfrogging over the stationary electron. This not only grants a more enriched mobility for shuttled electrons, as it opens new possible routing paths, but also enables the implementation of an entangling SWAP$^γ$ two-qubit gate operation in the process. Simulating this process for different sets of parameters, we demonstrate the feasibility of such an operation and offer a unique use case for otherwise precarious regions of a quantum processor chip and propose a possible extension to the set of possible operations for silicon spin qubit devices.

cond-mat.mes-hall

Do single-shot projective readouts necessarily estimate the $T_1$ lifetime ?

When single-shot qubit readout protocols are adapted for multilevel systems, theoretical $T_1$ lifetime calculations often fall short of capturing the experimental lifetime trends. We identify extrinsic population dynamics as the fundamental origin of this disparity, establishing that the lifetime estimates can, in certain operating regions, be distinct from the intrinsic $T_1$ time. We clarify these aspects with an integrated theory to address recent measurements [Nat. Nano, 20, 494, (2025)] on spin-valley states in bilayer graphene. While confirming that phonon and Johnson noise are the dominant intrinsic sources, we show that the inclusion of extrinsic factors provide the critical match to the experimental estimates. The extrinsic factors also effectuate violations of generalized Mathiessen's rules. With an improved handle on the design space, a revised readout protocol to estimate the $T_1$ lifetime of the valley qubit is proposed.

cond-mat.mes-hall

Photon-mediated entanglement between spin qubits beyond the dispersive regime

Dispersively coupled distant qubits in a shared cavity can become entangled through virtual photon exchange with energy-conserving phase evolution of their quantum states. This interaction can potentially be accelerated by operating on resonance, allowing for the exchange of real photons. In this theoretical study, we examine photon-mediated entanglement between two distant spins of electrons confined in double quantum dots formed in a Si/SiGe heterostructure. We calculate the dynamics of the combined system comprised of both spin qubits and the cavity, assuming that both spin qubits can be tuned into and out of resonance with the host cavity. We demonstrate that the exchange of real photons between the two spin qubits can result in rapid entanglement that is robust against decoherence. These results pave the way for the development of quantum gates on resonantly coupled distant semiconductor spin qubits.

cond-mat.other

Valleytronics in 2D Materials Roadmap

Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out information. The advent of 2D materials, first graphene and then transition-metal dichalcogenides, made valley control practical through optical, electrical, and magnetic routes. This foundation has enabled remarkable progress in recent years spanning established frontiers, such as valley exciton physics and valley Hall effects, as well as emerging directions including lightwave valleytronics, nanophotonic integration, flat-band valleytronics, and spin-valley qubits. In parallel, there are sustained efforts to scale up valleytronic materials and to predict new valleytronic platforms. This Roadmap brings together perspectives from leading experts to chart the key opportunities and challenges at the forefront of 2D material valleytronics. Each section captures a snapshot of progress in a key research area, identifies critical open challenges, and outlines pathways toward future valleytronics breakthroughs.

cond-mat.mes-hall

Non-Markovianity induced by Pauli-twirling

Noise forms a central obstacle to effective quantum information processing. Recent experimental advances have enabled the tailoring of noise properties through Pauli twirling, transforming arbitrary noise channels into Pauli channels. This underpins theoretical descriptions of fault-tolerant quantum computation and forms an essential tool in noise characterization and error mitigation. Pauli-Lindblad channels have been introduced to aptly parameterize quasi-local Pauli errors across a quantum register, excluding negative Pauli-Lindblad parameters relying on the Markovianity of the underlying noise processes. We point out that caution is required when parameterizing channels as Pauli-Lindblad channels with nonnegative parameters. For this, we study the effects of Pauli twirling on Markovianity. We use the notion of Markovianity of a channel (rather than that of an entire semigroup) and prove a general Pauli channel is non-Markovian if and only if at least one of its Pauli-Lindblad parameters is negative. Using this, we show that Markovian quantum channels often become non-Markovian after Pauli twirling. The Pauli-twirling induced non-Markovianity necessitates the use of negative Pauli-Lindblad parameters for a correct noise description in experimentally realistic scenarios. An important example is the implementation of the $\sqrt{X}$-gate under standard Markovian noise. As such, our results have direct implications for quantum error mitigation protocols that rely on accurate noise characterization.

quant-ph

Qubit-qudit entanglement transfer in defect centers with high-spin nuclei

We propose a scheme for accumulating entanglement between long-lived qudits provided by central nuclear spins of defect centers. Assuming a generic setting, the electron spin of each node acts as the communication qubit and may be entangled with other nodes, e.g., through a spin-photon interface. The generally available Ising component of the hyperfine interaction is shown to facilitate repeated entanglement transfer onto memory qudits of arbitrary dimension $d\le 2I+1$ with $I$ the nuclear spin quantum number. When $d$ is set to an integer power of two, maximal entanglement can be generated deterministically and without intermittent driving of nuclear spins. The scheme is applicable to several candidate systems, including the $^{73}$Ge germanium vacancy in diamond.

quant-ph

Efficient quantum simulation for translationally invariant systems

Discrete translational symmetry plays a fundamental role in condensed matter physics and lattice gauge theories, enabling the analysis of systems that would otherwise be intractable. Despite this, many open problems remain. Quantum simulation promises to offer new insights, but progress is often limited by device connectivity constraints, which lead to prohibitively long computation times. We extend the use of spatial symmetry from the systems to be simulated to the quantum circuits simulating them. One application is that it becomes possible to efficiently and optimally alleviate device connectivity constraints algorithmically. This leads to reductions in quantum computational time by several orders of magnitude even for moderate system sizes, making such simulations feasible, with even greater relative gains for larger systems. This substantially enhances the capabilities of quantum computers in the simulation of condensed matter systems and lattice gauge theories, even before hardware improvements. Our work forms the basis for using spatial symmetry of quantum circuits in other areas of quantum computation, such as in the design and implementation of quantum error correcting codes.

quant-ph

Roadmap: 2D Materials for Quantum Technologies

Two-dimensional (2D) materials have emerged as a versatile and powerful platform for quantum technologies, offering atomic-scale control, strong quantum confinement, and seamless integration into heterogeneous device architectures. Their reduced dimensionality enables unique quantum phenomena, including optically addressable spin defects, tunable single-photon emitters, low-dimensional magnetism, gate-controlled superconductivity, and correlated states in Moiré superlattices. This Roadmap provides a comprehensive overview of recent progress and future directions in exploiting 2D materials for quantum sensing, computation, communication, and simulation. We survey advances spanning spin defects and quantum sensing, quantum emitters and nonlinear photonics, computational theory and data-driven discovery of quantum defects, spintronic and magnonic devices, cavity-engineered quantum materials, superconducting and hybrid quantum circuits, quantum dots, Moiré quantum simulators, and quantum communication platforms. Across these themes, we identify common challenges in defect control, coherence preservation, interfacial engineering, and scalable integration, alongside emerging opportunities driven by machine$-$learning$-$assisted design and integrated experiment$-$theory feedback loops. By connecting microscopic quantum states to mesoscopic excitations and macroscopic device architectures, this Roadmap outlines a materials-centric framework for integrating coherent quantum functionalities and positions 2D materials as foundational building blocks for next-generation quantum technologies.

quant-ph

Modelling the Impact of Device Imperfections on Electron Shuttling in SiMOS devices

Extensive theoretical and experimental work has established high-fidelity electron shuttling in Si/SiGe systems, whereas demonstrations in Si/SiO2 (SiMOS) remain at an early stage. To help address this, we perform full 3D simulations of conveyor-belt charge shuttling in a realistic SiMOS device, building on earlier 2D modelling. We solve the Poisson and time-dependent Schrodinger equations for varying shuttling speeds and gate voltages, focusing on potential pitfalls of typical SiMOS devices such as oxide-interface roughness, gate fabrication imperfections, and charge defects along the transport path. The simulations reveal that for low clavier-gate voltages, the additional oxide screening in multi-layer gate architectures causes conveyor-belt shuttling to collapse to the bucket-brigade mode, inducing considerable orbital excitation in the process. Increasing the confinement restores conveyor-belt operation, which we find to be robust against interface roughness, gate misalignment, and charge defects buried in the oxide. However, our results indicate that defects located at the Si/SiO2-interface can induce considerable orbital excitation. For lower conveyor gate biases, positive defects in the transport channel can even capture passing electrons. Hence we identify key challenges and find operating regimes for reliable charge transport in SiMOS architectures.

quant-ph

Phonon-induced frequency shift in semiconductor spin qubits

Spin qubits have proven to be a feasible candidate for quantum computation, and some realizations of spin qubits already benefit from advanced device manufacturing in the semiconductor industry. Compared to superconducting platforms, spin qubits can operate at higher temperatures from tens of millikelvin up to a few kelvin. However, recent experiments show a non-trivial and often non-monotonic dependence of the spin qubit frequency on the temperature, featuring a region of decreased sensitivity to temperature fluctuations. In this work, we aim to gain insight into the physics behind such temperature shifts in the low-temperature limit. Investigating the spin qubits' interaction with phonon modes of the host material, we can explain some of the key features of the observed behavior and estimate the temperature sweet spot for the qubit frequency shift.

cond-mat.mes-hall

Universal dissipators for driven open quantum systems and the correction to linear response

We investigate in parallel two common pictures used to describe quantum systems interacting with their surrounding environment, i.e., the stochastic Hamiltonian description, where the environment is implicitly included in the fluctuating internal parameters of the system, and the explicit inclusion of the environment via the time-convolutionless projection operator method. Utilizing these two different frameworks, we show that the dissipator characterizing the dynamics of the reduced system, determined up to second order in the noise strength or bath-system coupling, is composed of two parts. One is universal, meaning that it keeps the same form regardless of the drive term. This form constitutes the relevant part of the dissipator only as long as the drive is weak. We thoroughly discuss the assumptions on which this treatment is based and its limitations. Then, by considering the first non-vanishing higher-order term in our expansion, we derive the other, drive-dependent, term completing the full dissipator. This part of the dissipator, originating from the third cumulant, is usually neglected when modeling the decoherent dynamics of controlled qubits. However, this further term constitutes the linear response correction due to memory-mediated environmental effects in driven-dissipative quantum systems. Also, it notably shows that the structure of our quantum master equation goes beyond the Lindblad form. The Lindblad form is recovered for memory-less baths. Finally, we demonstrate this technique to be highly accurate for the problems of dephasing in a driven qubit and for the theory of pseudo-modes for quantum environments.

quant-ph

Effective 2D Envelope Function Theory for Silicon Quantum Dots

We present a rigorous method to reduce the three-dimensional (3D) description of a quantum dot in silicon to an effective two-dimensional (2D) envelope function theory for electron spin qubits. By systematically integrating out the strongly confined vertical dimension using a Born-Oppenheimer-inspired ansatz at the envelope-function level, we derive an effective in-plane potential that faithfully captures the essential electrostatics of the full 3D system. Considering the lowest two eigenstates of the out-of-plane direction, this reduction leads to the natural and explicit emergence of the valley degree of freedom within a 2D formalism, which is derived here from first principles. We validate the accuracy of the method through comparisons with full 3D simulations and demonstrate its superiority over naive 2D slicing, particularly in the presence of interface roughness. Crucially, the reduction in dimensionality leads to substantial computational savings, making our approach particularly well suited for simulating two-electron systems, e.g., for the extraction of parameters such as the exchange coupling. Beyond its practical utility, the rigorous 2D envelope function theory that is introduced in this study incorporates valley physics in a physically grounded manner, offering conceptual clarity on the role of valley states in qubit operation and measurement.

quant-ph