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Guilherme J. Inacio

Publications and source records attributed to Guilherme J. Inacio.

3 recordsLinked to original sources

Angular-resolved nonlinear optical response as a probe of Lorentz violation in noncentrosymmetric materials

We propose a methodology to detect weak Lorentz-violating (LV) backgrounds through the nonlinear shift photocurrent in noncentrosymmetric crystals. Using a spinful Rice--Mele model, we show that a LV background induces a momentum-odd correction to the Bloch Hamiltonian that reshapes the phase of the interband dipole matrix elements. As a result, the shift conductivity develops a robust $π$-periodic modulation as a function of the angle of a perpendicularly applied static electric field, in contrast to a weakly $2π$-periodic response of the Lorentz-symmetric case. This change in angular periodicity provides a signature of LV effects which can be directly identified through a photocurrent measurement. For realistic optical intensities, the predicted signal lies in the picoampere range, which can be enhanced in a matrix of weakly interacting chains, allowing sensitivity to LV coupling strengths of the order of $ξ\sim10^{-24}\,\mathrm{C\,m}$. These results establish nonlinear optical transport as a viable probe of emergent LV effects in solid-state systems.

cond-mat.mes-hall

Enabling the bulk photovoltaic effect in centrosymmetric materials through an external electric field

We develop a practical approach to electrically tuning the nonlinear photoresponse of two-dimensional semiconductors by explicitly incorporating a static out-of-plane electric field into the electronic ground state prior to optical excitation, as a gate bias. The method is implemented by dressing a Wannier-interpolated Hamiltonian with the field through its position matrix elements, which allows the gate bias to modify orbital hybridization and band dispersion beyond perturbative treatments. Within the independent-particle approximation, the resulting second-order (shift) conductivity is evaluated for both centrosymmetric and non-centrosymmetric layered systems. Applied to MoS$_2$, the approach captures the emergence of a finite shift current in centrosymmetric bilayers and the tunability of intrinsic responses in polar structures. The shift conductivity rises linearly at small fields and saturates at higher intensities, reflecting the competition between the growing shift vector and the weakening interband coupling as resonant transitions move away from high-symmetry valleys. A Taylor expansion of the field-dressed conductivity connects this behavior to the third-order optical response, revealing a unified picture of field-induced nonlinearities. These results establish field dressing of Wannier Hamiltonians as a practical route to model and predict nonlinear photocurrents in layered materials.

cond-mat.mes-hall

Excitonic optical absorption in strained monolayer CrSBr

Recently, the isolation of 2D magnetic materials has opened several avenues for possible new ap- plications in spintronics. Among these materials, CrSBr has sparked interest due to its relatively high Curie temperature, highly anisotropic lattice structure, and high structural stability. These properties ran along others shared by any atomically thin material such as its outstanding defor- mation capacity and a strong optical response dominated by excitonic effects. The combination of these properties provides a fairly uncharted playground where to explore the interplay between magnetism and optical excitations. Here, we focus our attention on the theoretical optical response of CrSBr under several distinct strain configurations, analyzing the resulting changes to both the excitonic peaks and overall shape of the diagonal components of the linear conductivity tensor.

cond-mat.mes-hall