Guilin Wu | Searcharxiv

arXiv2026

On stress-assisted boundary migration during recrystallization

This study investigates the boundary migration mechanisms near the sample surface of recrystallizing grains in high-purity Al subjected to cryogenic rolling. Local strain and stress tensors were characterized during \textit{in situ} annealing by combining high-resolution electron backscatter diffraction with microstructure-based digital image correlation strain analysis. The results reveal local residual strains on the order of $10^{-3}$ within the recrystallizing grain, with values several times higher in the adjacent deformed matrix. The residual stresses in recrystallizing grains are a passive response to those developed within the surrounding deformed grains; the latter being strongly influenced by the local geometry and characteristics of dislocation boundaries, as well as by constraints imposed by neighboring grains. No evidence of shear-coupled motion was observed during the recrystallization boundary migration, despite the presence of shear stress across the boundary. In contrast, detailed analysis of the principal strain components reveals a clear correlation between residual strain patterns and boundary migration directions. These findings indicate that recrystallization boundary migration is modulated by the anisotropy of the local internal stress state.

cond-mat.mtrl-sci↗

arXiv2019

Synthesis and electronic structure characterization of diamane

Atomically thin graphite, known as graphene, has been a marvel in material science because of its exceptional properties, novel physics and promising applications. Atomically thin diamond, called diamane, has also attracted considerable scientific interest due to its potential physical and mechanical properties. However, until now there has been no reports of successful synthesis of a free-standing pristine diamane film. Here, we report the synthesis and electronic structure characterization of diamane. Electrical measurements, x-ray diffraction and theoretical simulations reveal that trilayer and thicker graphene transform to hexagonal diamane (h-diamane) when compressed to above 20 GPa, which can be preserved down to few GPa. Raman studies indicate that the sample quenched from high pressure and high temperature also has a h-diamane structure, i.e., h-diamane is recovered back to ambient conditions. Optical absorption and band structure calculations reveal an indirect energy gap of 2.8 eV in the diamane film. Compared to gapless graphene, diamane with sizable bandgap may open up new applications of carbon semiconductors.

cond-mat.mtrl-sci↗