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Guilong Gao

Publications and source records attributed to Guilong Gao.

2 recordsLinked to original sources

The nanoscale imaging of the bulk polycrystalline material with the effects of depth of field and field of view based on x-ray free electron laser

Microscale imaging of mesoscale bulk materials under dynamic compression is important for understanding their properties. In this work, we study the effects of the depth of field (DoF) and field of view (FoV) of the optical lens and extract the scattered light of the region to be imaged within the bulk polycrystalline material based on the objective Bragg coherent diffraction imaging. We describe how the DoF and FoV quantitatively limit the diffraction volume, where the DoF and FoV limit the scattering region parallel and perpendicular to the direction of the light source respectively. We demonstrate this scheme by simulating the separate imaging of a submicron-sized crack region within a few μm-sized Si bulk material, and obtain a high imaging quality. This scheme enables imaging of selected regions within bulk polycrystalline materials with the resolution up to the order of 10 nm.

physics.optics

Theoretical and experimental study on Noise Equivalent Power of X-ray semiconductor ultra-fast response material based on the rad-optic effect

Semiconductor material based on the rad-optic effect enables ultra-fast detection of X-rays and plays an important role in fusion diagnostics. Obtaining the accurate noise equivalent power (NEP) of the semiconductor ultrafast response material is the key to detecting X-rays. In this paper, the refractive index change mechanism of the semiconductor under X-ray irradiation was analyzed, and the quantitative relationship between the diffraction efficiency and the X-ray photon energy was established through the LT-AlGaAs diffraction imaging experiments. The impulse responses of LT-AlGaAs under 1 KeV-10 KeV X-ray radiation were calculated, revealing the variation of NEP density with radiated photon energy. In the case of bombarding the Al target to generate 1.5 KeV X-rays, the imaging experiments of LT-AlGaAs were performed. The diffraction image of LT-AlGaAs has a linear relationship with the radiation intensity, and the NEP density of LT-AlGaAs reaches 4.80*105W/cm2. This study has reference significance for the development of ultra-fast X-ray imaging systems based on the rad-optic effect.

physics.ins-det