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Guizhou Xu

Publications and source records attributed to Guizhou Xu.

At least 19 recordsLinked to original sources

Nonlinear field dependence of Hall effect and high-mobility multi-carrier transport in an altermagnet CrSb

As a promising candidate for altermagnet, CrSb possesses a distinctive compensated spin split band structure that could bring groundbreaking concepts to the field of spintronics. In this work, we have grown high-quality CrSb single crystals and comprehensively investigated their electronic and magneto-transport properties. We have observed large, positive, and non-saturated magnetoresistance (MR) in CrSb, which well obeys Kohler's rule, indicating its classic Lorentz scattering origins. Remarkably, a nonlinear magnetic field dependence of Hall effect resembling the spontaneous anomalous Hall is identified over a wide temperature range. After careful analysis of the transport data, we conclude the non-linearity mainly stems from the incorporation of different carriers in the magnetoconductivity. According to the Fermi surface analyses of CrSb, we applied the three-carrier model to fit the conductivity data, yielding good agreement. The extracted carrier concentration and mobility indicates that CrSb behaves more like a semimetal, with the highest mobility reaching 3*103 cm2V-1s-1. Furthermore, calculations using the semiclassical Boltzmann transport theory have successfully reproduced the main features of the experimental MR and Hall effect in CrSb. These exceptional transport properties make CrSb unique for applications in spintronics as an altermagnet.

cond-mat.mtrl-sci

Growth of high-quality CrI3 single crystals and engineering of its magnetic properties via V and Mn doping

CrI3, as a soft van der Waals layered magnetic material, has been widely concerned and explored for its magnetic complexity and tunability. In this work, high quality and large size thin CrI3, V and Mn doped single crystals were prepared by chemical vapor transfer method. A remarkable irreversible Barkhausen effect was observed in CrI3 and CrMn0.06I3, which can be attributed to the low dislocation density that facilitates movement of the domain walls. In addition, the introduction of the doping element Mn allows higher saturation magnetization intensity. Cr0.5V0.5I3 exhibits substantially increased coercivity force and larger magnetocrystalline anisotropy compared to CrI3, while kept similar Curie temperature and good environmental stability. The first principles calculations suggest direct and narrowed band gaps in Cr0.5V0.5I3 and VI3 comparing to CrI3. The smaller band gaps and good hard magnetic property make Cr0.5V0.5I3 an alternative choice to future research of spintronic devices.

cond-mat.mtrl-sci

Highly sensitive magnetic properties and large linear magnetoresistance in antiferromagnetic CrxSe(0.875\lex\le1)single crystals

CrxSe (x\le1) is a class of quasi-layered binary compounds with potential applications in spintronics due to its intriguing antiferromagnetic properties. In this work, CrxSe single crystals with high Cr content (x=0.87, 0.91 and 0.95) were grown, and their magnetic and transport properties were investigated in detail. It is found that with small increase of Cr content, the Néel temperature (TN) of the samples can dramatically increase from 147 K to 257 K, accompanied with obvious changes in the magnetic anisotropy and hysteresis. The phenomena of field-induced spin-flop transitions were unveiled in these alloys, indicating their comparatively low anisotropy. The magnetoresistance (MR) of the three compounds showed positive dependence at low temperatures and particularly, non-saturated linear positive MR was observed in Cr0.91Se and Cr0.95Se, with a large value of 16.2% achieved in Cr0.91Se (10K, 9T). The calculated Fermi surface and MR showed that the quasi-linear MR is a product of carrier compensation. Our work revealed highly sensitive magnetic and transport properties in the Cr-Se compounds, which can lay foundation when constructing further antiferromagnetic spintronic devices based on them.

cond-mat.mtrl-sci

Vanishing of the anomalous Hall effect and enhanced carrier mobility in the spin-gapless ferromagnetic Mn2CoGa1-xAlx alloys

Spin gapless semiconductor (SGS) has attracted long attention since its theoretical prediction, while concrete experimental hints are still lack in the relevant Heusler alloys. Here in this work, by preparing the series alloys of Mn2CoGa1-xAlx (x=0, 0.25, 0.5, 0.75 and 1), we identified the vanishing of anomalous Hall effect in the ferromagnetic Mn2CoGa (or x=0.25) alloy in a wide temperature interval, accompanying with growing contribution from the ordinary Hall effect. As a result, comparatively low carrier density (1020 cm-3) and high carrier mobility (150 cm2/Vs) are obtained in Mn2CoGa (or x=0.25) alloy in the temperature range of 10-200K. These also lead to a large dip in the related magnetoresistance at low fields. While in high Al content, despite the magnetization behavior is not altered significantly, the Hall resistivity is instead dominated by the anomalous one, just analogous to that widely reported in Mn2CoAl. The distinct electrical transport behavior of x=0 and x=0.75 (or 1) is presently understood by their possible different scattering mechanism of the anomalous Hall effect due to the differences in atomic order and conductivity. Our work can expand the existing understanding of the SGS properties and offer a better SGS candidate with higher carrier mobility that can facilitate the application in the spin-injected related devices.

cond-mat.mtrl-sci

Observation of Magnetic Skyrmion Bubbles in a van der Waals ferromagnet Fe3GeTe2

Two-dimensional (2D) van der Waals (vdW) magnetic materials have recently been introduced as a new horizon in materials science and enable the potential applications for next-generation spintronic devices. Here, in this communication, the observations of stable Bloch-type magnetic skyrmions in single crystals of 2D vdW Fe3GeTe2 (FGT) are reported by using in-situ Lorentz transmission electron microscopy (TEM). We find the ground-state magnetic stripe domains in FGT transform into skyrmion bubbles when an external magnetic field is applied perpendicularly to the (001) thin plate with temperatures below the Curie-temperature TC. Most interestingly, a hexagonal lattice of skyrmion bubbles is obtained via field cooling manipulation with magnetic field applied along the [001] direction. Owing to their topological stability, the skyrmion bubble lattices are stable to large field-cooling tilted angles and further reproduced by utilizing the micromagnetic simulations. These observations directly demonstrate that the 2D vdW FGT possesses a rich variety of topological spin textures, being of a great promise candidate for future applications in the field of spintronics.

cond-mat.mtrl-sci

Manipulating Spin Chirality of Magnetic Skyrmion Bubbles by In-Plane Re-versed Magnetic Fields in (Mn$_{1-x}$Ni$_x$)$_{65}$Ga$_{35}$ ($x = 0.45$) magnet

Understanding the dynamics of the magnetic skyrmion, a particle-like topologically stable spin texture, and its response dynamics to external fields are indis-pensable for the applications in spintronic devices. In this letter, the Lorentz transmis-sion electron microscopy (LTEM) was used to investigate the spin chirality of the mag-netic skyrmion bubbles (SKBs) in the centrosymmetric magnet MnNiGa at room tem-perature. The reversal of SKBs excited by the in-plane magnetic field has been revealed. Moreover, the collective behavior of interacting spin chirality can be manipulated by reversing the directions of the magnetic fields on a wedge-shaped thin plate. The dy-namic behavior of the bubbles at different position of the thin plate has been explored with the micromagnetic simulation, indicating a non-uniform and nontrivial dynamic magnetization on the surfaces and center of the thin plate during the spin chirality re-versal. The results suggest that the controllable symmetry breaking of the SKBs arising from thickness variation provides an ability to manipulate the collective behavior of the spin chirality with small external fields, leading to a promising application in nonvola-tile spintronic devices for magnetic skyrmions.

physics.app-ph

Manipulating the Topology of Nanoscale Skyrmion Bubbles by Spatially Geometric Confinement

The discovery of magnetic skyrmion bubbles in centrosymmetric magnets has been receiving increasing interest from the research community, due to the fascinating physics of topological spin textures and its possible applications to spintronics. However, key challenges remain, such as how to manipulate the nucleation of skyrmion bubbles to exclude the trivial bubbles or metastable skyrmion bubbles that usually coexist with skyrmion bubbles in the centrosymmetric magnets. Here, we report having successfully performed this task by applying spatially geometric confinement to a centrosymmetric frustrated Fe3Sn2 magnet. We demonstrate that the spatially geometric confinement can indeed stabilize the skyrmion bubbles, by effectively suppressing the formation of trivial bubbles and metastable skyrmion bubbles. We also show that the critical magnetic field for the nucleation of the skyrmion bubbles in the confined Fe3Sn2 nanostripes is drastically less, by an order of magnitude, than that what is required in the thin plate without geometrical confinement. By analyzing how the width and thickness of the nanostripes affect the spin textures of skyrmion bubbles, we infer that the topological transition of skyrmion bubbles is closely related to the dipole-dipole interaction, which we find is consistent with theoretical simulations. The results presented here represent an important step forward in manipulating the topological spin textures of skyrmion bubbles, making us closer to achieving the fabrication of skyrmion-based racetrack memory devices.

cond-mat.mes-hall

Creation of Single Chain of Nanoscale Skyrmion Bubbles with Record-high Temperature Stability in a Geometrically Confined Nanostripe

Nanoscale topologically non-trivial spin textures, such as magnetic skyrmions, have been identified as promising candidates for the transport and storage of information for spintronic applications, notably magnetic racetrack memory devices. The design and realization of single skyrmion chain at room temperature (RT) and above in the low-dimensional nanostructures are of great importance for future practical applications. Here, we report the creation of a single skyrmion bubble chain in a geometrically confined Fe3Sn2 nanostripe with a width comparable to the featured size of a skyrmion bubble. Systematic investigations on the thermal stability have revealed that the single chain of skyrmion bubbles can keep stable at temperatures varying from RT up to a record-high temperature of 630 K. This extreme stability can be ascribed to the weak temperature-dependent magnetic anisotropy and the formation of edge states at the boundaries of the nanostripes. The realization of the highly stable skyrmion bubble chain in a geometrically confined nanostructure is a very important step towards the application of skyrmion-based spintronic devices.

cond-mat.mtrl-sci

Current-Induced Helicity Reversal of a Single Skyrmionic Bubble Chain in a Nanostructured Frustrated Magnet

Helicity indicates the in-plane magnetic-moment swirling direction of a skyrmionic configuration. The ability to reverse the helicity of a skyrmionic bubble via purely electrical means has been predicted in frustrated magnetic systems, however its experimental observation has remained challenging. Here, we experimentally demonstrate the current-driven helicity reversal of the skyrmionic bubble in a nanostructured frustrated Fe3Sn2 magnet. The critical current density required to trigger the helicity reversal is 109 - 1010 A/m2, with a corresponding pulse-width varying from 1 μs to 100 ns. Computational simulations reveal that both the pinning effect and dipole-dipole interaction play a crucial role in the helicity-reversal process.

cond-mat.mes-hall

Planar topological Hall effect in a uniaxial van der Waals ferromagnet Fe3GeTe2

In this work, we reported the observation of a novel planar topological Hall effect (PTHE) in single crystal of Fe3GeTe2, a paradigmatic two-dimensional ferromagnet with strong uniaxial anisotropy. The Hall effect and magnetoresistance varied periodically when the external magnetic field rotated in the ac (or bc) plane, while the PTHE emerged and maintained robust with field swept across the hard-magnetized ab plane. The PTHE covers the whole temperature region below Tc (~150 K) and a comparatively large value is observed at 100 K. Emergence of an internal gauge field was proposed to explain the origin of this large PTHE, which is either generated by the possible topological domain structure of uniaxial Fe3GeTe2 or the non-coplanar spin structure formed during the in-plane magnetization. Our results promisingly provide an alternative detection method to the in-plane skyrmion formation and may bring brand-new prospective to magneto-transport studies in condensed matter physics.

cond-mat.mtrl-sci

Tunable magnetic and transport properties of Mn3Ga thin films on Ta/Ru seedlayer

Hexagonal D019-type Mn3Z alloys that possess large anomalous and topological-like Hall effects have attracted much attention due to their great potential in the antiferromagnetic spintronic devices. Here, we report the preparation of Mn3Ga film in both tetragonal and hexagonal phases with a tuned Ta/Ru seed layer on the thermally oxidized Si substrate. A large coercivity together with a large anomalous Hall resistivity is found in the Ta-only sample with mixed tetragonal phase. By increasing the thickness of Ru layer, the tetragonal phase gradually disappears and a relatively pure hexagonal phase is obtained in the Ta(5)/Ru(30) buffered sample. Further magnetic and transport measurements revealed that the anomalous Hall conductivity nearly vanishes in the pure hexagonal sample, while an abnormal asymmetric hump structure emerges in the low field region. The extracted additional Hall term is robust in a large temperature range and presents a sign reversal above 200K. The abnormal Hall properties are proposed to be closely related with the frustrated spin structure of D019 Mn3Ga.

cond-mat.mtrl-sci

Observation of Various and Spontaneous Magnetic Skyrmionic Bubbles at Room-Temperature in a Frustrated Kagome Magnet with Uniaxial Magnetic Anisotropy

Various and spontaneous magnetic skyrmionic bubbles are experimentally observed for the first time, at room temperature in a frustrated kagome magnet Fe3Sn2 with unixial magnetic anisotropy. The magnetization dynamics were investigated using in-situ Lorentz transmission electron microscopy, revealing that the transformation between different magnetic bubbles and domains are via the motion of Bloch lines driven by applied external magnetic field. The results demonstrate that Fe3Sn2 facilitates a unique magnetic control of topological spin textures at room temperature, making it a promising candidate for further skyrmion-based spintronic devices.

cond-mat.mtrl-sci

Designing compensated magnetic states in tetragonal Mn3Ge-based alloys

Magnetic compensated state attracted much interests due to the observed large exchange bias and large coercivity, and its potential applications in the antiferromagnetic spintronics with merit of no stray field. In this work, by ab initio calculations with KKR-CPA for the treatment of random substitution, we obtain the complete compensated states in the Ni (Pd, Pt) doped Mn3Ge-based D022-type tetragonal Heusler alloys. We find the total moment change is asymmetric across the compensation point (at ~ x = 0.3) in Mn3-xYxGe (Y = Ni, Pd, Pt), which is highly conforming to that experimentally observed in Mn3Ga. In addition, an uncommon discontinuous jump is observed across the critical zero-moment point, indicating that some non-trivial properties can emerge at this point. Further electronic analysis for the three compensation compositions reveals large spin polarizations, together with the high Curie temperature of the host Mn3Ge, making them promising candidates for spin transfer torque applications.

cond-mat.mtrl-sci

A centrosymmetric hexagonal magnet with superstable biskyrmion magnetic nanodomains in a wide temperature range of 100K to 340K

Here, we report on the experimental discovery of biskyrmion magnetic nanodomains at RT and the observation of a biskyrmion-derived topological Hall effect (THE) in the centrosymmetric hexagonal MnNiGa magnet. Using a phase reconstruction technique based on a transport-of-intensity equation (TIE), we established the texture of the biskyrmion spin. Results from Lorentz transmission electron microscopy (TEM) and the topological Hall effect revealed that the biskyrmion phase is stable over a much wider temperature range (100 K to ~340K) and a larger magnetic field range in our material than in skyrmion-hosting bulk crystals reported previously[1-3,6]. The super-wide operating temperature and the broad range of material options indicate important progress toward the realization of skyrmion-based spintronic devices.

cond-mat.mtrl-sci

NMR Evidence for the Topologically Nontrivial Nature in a Family of Half-Heusler Compounds

Spin-orbit coupling (SOC) is expected to partly determine the topologically nontrivial electronic structure of heavy half-Heusler ternary compounds. However, to date, attempts to experimentally observe either the strength of SOC or how it modifies the bulk band structure have been unsuccessful. By using bulk-sensitive nuclear magnetic resonance (NMR) spectroscopy combined with first-principles calculations, we reveal that 209Bi NMR isotropic shifts scale with relativity in terms of the strength of SOC and average atomic numbers, indicating strong relativistic effects on NMR parameters. According to first-principles calculations, we further claim that nuclear magnetic shieldings from relativistic p1/2 states and paramagnetic contributions from low-lying unoccupied p3/2 states are both sensitive to the details of band structures tuned by relativity, which explains why the hidden relativistic effects on band structure can be revealed by 209Bi NMR isotropic shifts in topologically nontrivial half-Heusler compounds. Used in complement to surface-sensitive methods, such as angle resolved photon electron spectroscopy and scanning tunneling spectroscopy, NMR can provide valuable information on bulk electronic states.

cond-mat.str-el

High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

cond-mat.mtrl-sci

Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb

High quality half-Heusler single crystals of LuPtSb have been synthesized by a Pb flux method. The temperature dependent resistivity and Hall effects indicate that the LuPtSb crystal is a p-type gapless semiconductor showing a transition from semiconducting to metallic conducting at 150 K. Moreover, a weakly temperature-dependent positive magnetoresistance (MR) as large as 109 % and high carrier mobility up to 2950 cm2/Vs are experimentally observed at temperatures below 150 K. The low-field MR data shows evidence for weak antilocalization (WAL) effect at temperatures even up to 150 K. Analysis of the temperature and angle dependent magnetoconductance manifests that the WAL effect originates from the bulk contribution owing to the strong spin-orbital coupling.

cond-mat.str-el

NMR evidence for enhanced orbital diamagnetism in topologically nontrivial half-Heusler semimetals

209Bi nuclear magnetic resonance (NMR) spectroscopy was employed to probe potential spin-orbit effects on orbital diamagnetism in YPtBi and YPdBi crystals. The observed opposite sign and temperature dependent magnitude of 209Bi NMR shifts of both crystals reveal experimental signatures of enhanced orbital diamagnetism induced by spin-orbit interactions. This investigation indicates that NMR isotropic shifts might be beneficial in search of interesting spin-electronic phases among a vast number of topological nontrivial half-Heusler semimetals.

cond-mat.str-el