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Gunther Springholz

Publications and source records attributed to Gunther Springholz.

21 records · Page 2Linked to original sources

Entropy controlled fully reversible nanostructure formation of Ge on miscut vicinal Si (001) surfaces

Entropy effects substantially modify the growth of self-assembled Ge nanostructures on vicinal Si (001) surfaces. As shown by variable temperature scanning tunneling microscopy, this leads to new types of one dimensional nanostructures that are not only tunable in size and shape but can be fully reversible erased and reformed without changes in final sizes and shapes. This unique behavior is caused by the free surface energy renormalization caused by the large step entropy of vicinal surfaces. In thermodynamic equilibrium, this favors the formation of a planar 2D surface at higher temperatures, where-as the nanostructured surface is the preferred low-temperature configuration. Taking the step entropy into account, the critical phase transition temperature is derived by free energy calculations and is shown to scale nearly linearly with the Ge coverage, in excellent agreement with the experiments. Due to self-limitation, the nanowire size is solely controlled by the Ge coverage and vicinal angle, completely independent of the growth or an-nealing conditions. Thus, highly reproducible nanostructures with tunable geometries are obtained. This opens new avenues for controlled nanostructure formation for practical de-vice applications.

cond-mat.mtrl-sci

Step-edge assisted large scale FeSe monolayer growth on epitaxial Bi2Se3 thin films

The interest in Fe-chalcogenide unconventional superconductors is intense after the critical temperature of FeSe was reported enhanced by more than one order of magnitude in the monolayer limit at the interface to an insulating oxide substrate. In heterostructures comprising interfaces of FeSe with topological insulators, additional interesting physical phenomena is predicted to arise e.g. in form of {\it topological superconductivity}. So far superconductive properties of Fe-chalcogenide monolayers were mostly studied by local scanning tunneling spectroscopy experiments, which can detect pseudo-gaps in the density of states as an indicator for Cooper pairing. Direct macroscopic transport properties which can prove or falsify a superconducting phase were rarely reported due to the difficulty to grow films with homogeneous material properties. Here we report on a promising growth method to fabricate continuous carpets of monolayer thick FeSe on molecular beam epitaxy grown Bi$_2$Se$_3$ topological insulator thin films. In contrast to previous works using atomically flat cleaved bulk Bi$_2$Se$_3$ crystal surfaces we observe a strong influence of the high step-edge density (terrace width about 10~nm) on MBE-grown Bi$_2$Se$_3$ substrates, which significantly promotes the growth of coalescing FeSe domains with small tetragonal crystal distortion without compromising the underlying Bi$_2$Se$_3$ crystal structure.

cond-mat.mtrl-sci

Magnetooptical determination of a topological index

When a Dirac fermion system acquires an energy-gap, it is said to have either trivial (positive energy-gap) or non-trivial (negative energy-gap) topology, depending on the parity ordering of its conduction and valence bands. The non-trivial regime is identified by the presence of topological surface or edge-state dispersing in the energy gap of the bulk and is attributed a non-zero topological index. In this work, we show that such topological indices can be determined experimentally via an accurate measurement of the effective velocity of bulk massive Dirac fermions. We demonstrate this analytically starting from the Bernevig-Hughes-Zhang Hamiltonian (BHZ) to show how the topological index depends on this velocity. We then experimentally extract the topological index in Pb1-xSnxSe and Pb1-xSnxTe using infrared magnetooptical Landau level spectroscopy. This approach is argued to be universal to all material classes that can be described by a BHZ-like model and that host a topological phase transition.

cond-mat.mes-hall