arXiv subjects

Guo-Xing Miao

Publications and source records attributed to Guo-Xing Miao.

10 recordsLinked to original sources

arXiv2026

Flat Band Generation through Interlayer Geometric Frustration in Intercalated Transition Metal Dichalcogenides

Electronic flat bands can lead to rich many-body quantum phases by quenching the electron's kinetic energy and enhancing many-body correlation. The reduced bandwidth can be realized by either destructive quantum interference in frustrated lattices, or by generating heavy band folding with avoided band crossing in Moire superlattices. Here we propose a general approach to introduce flat bands into widely studied transition metal dichalcogenide (TMD) materials by dilute intercalation. A flat band with vanishing dispersion is observed by angle-resolved photoemission spectroscopy (ARPES) over the entire momentum space in intercalated Mn1/4TaS2. Polarization dependent ARPES measurements combined with symmetry analysis reveals the orbital characters of the flat band. Supercell tight-binding simulations suggest that such flat bands arising from destructive interference between Mn and Ta on S through hopping pathways, are ubiquitous in a range of TMD families as well as for different intercalation configurations. Our findings establish a new material platform to manipulate flat band structures and explore their corresponding emergent correlated properties.

cond-mat.mtrl-sci↗

arXiv2025

Direct observation of distinct bulk and edge nonequilibrium spin accumulation in ultrathin MoTe$_2$

Low-symmetry two-dimensional (2D) topological materials such as MoTe$_2$ host efficient charge-to-spin conversion (CSC) mechanisms that can be harnessed for novel electronic and spintronic devices. However, the nature of the various CSC mechanisms and their correlation with underlying crystal symmetries remain unsettled. In this work, we use local spin-sensitive electrochemical potential measurements to directly probe the spatially dependent nonequilibrium spin accumulation in MoTe$_2$ flakes down to four atomic layers. We are able to clearly disentangle contributions originating from the spin Hall and Rashba-Edelstein effects and uncover an abundance of unconventional spin polarizations that develop uniquely in the sample bulk and edges with decreasing thickness. Using ab-initio calculations, we construct a unified understanding of all the observed CSC components in relation to the material dimensionality and stacking arrangement. Our findings not only illuminate previous CSC results on MoTe$_2$ but also have important ramifications for future devices that can exploit the local and layer-dependent spin properties of this 2D topological material.

cond-mat.mes-hall↗

arXiv2019

Engineering Nonlinear Response of Superconducting Niobium Microstrip Resonators via Aluminum Cladding

In this work, we find that Al cladding on Nb microstrip resonators is an efficient way to suppress nonlinear responses induced by local Joule heating, resulting in improved microwave power handling capability. This improvement is likely due to the proximity effect between the Al and the Nb layers. The proximity effect is found to be controllable by tuning the thickness of the Al layer. We show that improving the film quality is also helpful as it enhances the microwave critical current density, but it cannot eliminate the local heating.

cond-mat.supr-con↗

arXiv2019

Tailored tunnel magnetoresistance response in three ultrathin chromium trihalides

Materials that demonstrate large magnetoresistance have attracted significant interest for many decades. Recently, extremely large tunnel magnetoresistance (TMR) has been reported by several groups across ultrathin CrI$_3$ by exploiting the weak antiferromagnetic coupling between adjacent layers. Here, we report a comparative study of TMR in all three chromium trihalides (CrX$_3$, X= Cl, Br, or I) in the two-dimensional limit. As the materials exhibit different transition temperatures and interlayer magnetic ordering in the ground state, tunneling measurements allow for an easy determination of the field-temperature phase diagram for the three systems. By changing sample thickness and biasing conditions, we then demonstrate how to maximize and further tailor the TMR response at different temperatures for each material. In particular, near the magnetic transition temperature, TMR is non-saturating up to the highest fields measured for all three compounds owing to the large, field-induced exchange coupling.

cond-mat.mtrl-sci↗

arXiv2019

Evolution of interlayer and intralayer magnetism in three atomically thin chromium trihalides

We conduct a comprehensive study of three different magnetic semiconductors, CrI$_3$, CrBr$_3$, and CrCl$_3$, by incorporating both few- and bi-layer samples in van der Waals tunnel junctions. We find that the interlayer magnetic ordering, exchange gap, magnetic anisotropy, as well as magnon excitations evolve systematically with changing halogen atom. By fitting to a spin wave theory that accounts for nearest neighbor exchange interactions, we are able to further determine a simple spin Hamiltonian describing all three systems. These results extend the 2D magnetism platform to Ising, Heisenberg, and XY spin classes in a single material family. Using magneto-optical measurements, we additionally demonstrate that ferromagnetism can be stabilized down to monolayer in more isotropic CrBr$_3$, with transition temperature still close to that of the bulk.

cond-mat.mtrl-sci↗

arXiv2018

Magnetic hysteresis of a superconducting microstrip resonator with a high edge barrier

We investigate the magnetic hysteresis of a superconducting microstrip resonator with a high edge barrier. We measure the magnetic hysteresis while either sweeping a magnetic field or tuning the edge barrier by high microwave current. We show that the magnetic hysteresis of such a device is qualitatively different from that of one without an edge barrier and can be understood based on the generalized critical-state model. In particular, we propose and demonstrate a simple and intuitive method that relies on a plot of the quality factor versus the resonance frequency for revealing the physical processes behind those hysteretic behaviors. Based on this, we find that the interplay between the Meisser current and vortex pinning is essential for understanding the magnetic hysteresis of such a device.

cond-mat.supr-con↗

arXiv2018

Magnetic Field Dependent Microwave Losses in Superconducting Niobium Microstrip Resonators

We describe an experimental protocol to characterize magnetic field dependent microwave losses in superconducting niobium microstrip resonators. Our approach provides a unified view that covers two well-known magnetic field dependent loss mechanisms: quasiparticle generation and vortex motion. We find that quasiparticle generation is the dominant loss mechanism for parallel magnetic fields. For perpendicular fields, the dominant loss mechanism is vortex motion or switches from quasiparticle generation to vortex motion, depending on cooling procedures. In particular, we introduce a plot of the quality factor versus the resonance frequency as a general method for identifying the dominant loss mechanism. We calculate the expected resonance frequency and the quality factor as a function of the magnetic field by modeling the complex resistivity. Key parameters characterizing microwave loss are estimated from comparisons of the observed and expected resonator properties. Based on these key parameters, we find a niobium resonator whose thickness is similar to its penetration depth is the best choice for X-band electron spin resonance applications. Finally, we detect partial release of the Meissner current at the vortex penetration field, suggesting that the interaction between vortices and the Meissner current near the edges is essential to understand the magnetic field dependence of the resonator properties.

cond-mat.supr-con↗

arXiv2016

Resonant TMR inversion in LiF/EuS based spin-filter tunnel junctions

Resonant tunneling can lead to inverse tunnel magnetoresistance when impurity levels rather than direct tunneling dominate the transport process. We fabricated hybrid magnetic tunnel junctions of CoFe/LiF/EuS/Ti, with an epitaxial LiF energy barrier joined with a polycrystalline EuS spin-filter bar-rier. Due to the water solubility of LiF, the devices were fully packaged in situ. The devices showed sizeable positive TMR up to 16% at low bias voltages but clearly inverted TMR at higher bias voltages. The TMR inversion depends sensitively on the thickness of LiF, and the tendency of inversion disap-pears when LiF gets thick enough and recovers its intrinsic properties.

cond-mat.mtrl-sci↗

arXiv2016

Spin- and Symmetry-Filtering Combined Tunnel Magnetoresistance through Epitaxial MgO/EuS Tunnel Barriers

We created epitaxial magnetic tunnel junctions of FeCo/MgO/EuS on MgO buffered Si (100). Tunnel magnetoresistance reached up to 64% at 4.2 K. An unexpected fast drop of magnetoresistance was recorded for MgO thickness above 1 nm, which is attributed to the forced nonspecular conductance across the EuS conduction band minimum located at the X point, rather than the desired Delta_1 conductance centered around the Gamma point.

cond-mat.mtrl-sci↗

arXiv2016

2D implementation of quantum annealing algorisms for fourth order binary optimization problems

Quantum annealing may provide advantages over simulated annealing on solving some problems such as Kth order binary optimization problem. No feasible architecture exists to implement the high-order optimization problem (K > 2) on current quantum annealing hardware. We propose a two-dimensional quantum annealing architecture to solve the 4th order binary optimization problem by encoding four-qubit interactions within the coupled local fields acting on a set of physical qubits. All possible four-body coupling terms for an N-qubit system can be implemented through this architecture and are readily realizable with the existing superconducting circuit technologies. The overhead of the physical qubits is O(N4), which is the same as previously proposed architectures in four-dimensional space. The equivalence between the optimization problem Hamiltonian and the executable Hamiltonian is ensured by a gauge invariant subspace of the experimental system. A scheme to realize local gauge constraint by single ancillary qubit is proposed.

quant-ph↗