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Guodong Ren

Publications and source records attributed to Guodong Ren.

At least 19 recordsLinked to original sources

Tripling of the Superconducting Critical Current Density in BaFe$_2$(As$_{1-x}$P$_x$)$_2$ Retained After Pressure Release

Superconducting performance is tunable not only via chemical modification or defect engineering, but also through external parameters such as pressure, though this method remains less readily accessible. In this work, we study how compression influences vortex dynamics and critical currents in an iron-based superconductor. Specifically, we perform magnetization measurements using an off-the-shelf pressure cell to investigate the effects of hydrostatic pressures up to 1.08 GPa on the magnetic properties of BaFe$_2$(As$_{0.62}$P$_{0.38}$)$_2$ crystals across a range of temperatures $T$ and magnetic fields $H$. Although these pressures minimally affect the superconducting critical temperature, they produce a clear increase in the critical current density $J_c(T,H)$, a pronounced reduction in the rate of thermally activated vortex motion $S(T,H)$, and can change the dominant vortex pinning mechanism. Furthermore, the effects of pressure are irreversible: after pressurization and subsequent release at room temperature, high-density microcracks are observed and the crystals retain their enhanced critical current densities. The second magnetization peak vanishes above 18 K after the pressure cycle, which we attribute to a transition from predominantly $δκ$ pinning to a mixed mechanism of $δT_c$ and surface pinning. Lastly, a threefold increase in $J_c$, a more than 40\% reduction in $S$ at 8~K and 0.5~T, and an expanded elastic-creep region were achieved after $1-2$ pressure cycles. These findings demonstrate the potential utility of pressure cycling for improving $J_c$, which may offer a simpler alternative compared to approaches such as chemical doping or the introduction of artificial pinning centers.

cond-mat.supr-con

Atomic-Scale Observation of Symmetry Breaking in Altermagnetic MnTe

The recent discovery of altermagnetism has sparked growing interest in compensated magnetic systems as promising platforms for highly scalable spintronics. Altermagnetism is a distinct magnetic order where opposite spin sublattices are connected by rotation, yielding zero net magnetization but momentum-dependent spin splitting. To date, experimental verification of altermagnetic order has been achieved predominantly through bulk-sensitive techniques, including spin-dependent electronic spectra and transport responses. However, direct atomic-scale evidence that explicitly correlates crystal symmetry, local structural distortions, and magnetic ordering has remained unexplored. Here, we report the direct atomic-scale observation of coexisting polar distortions and altermagnetic order in MnTe, combining atomic resolution scanning transmission electron microscopy (STEM) imaging with electron magnetic chiral dichroism (EMCD) measurements. We reveal that MnTe is not an ideal uniform P63/mmc g-wave altermagnet at the atomic scale. Instead, it hosts ubiquitous inversion-symmetry-breaking distortions that lower the spin-space-group (SSG) symmetry, admits d-wave altermagnetic components, and in lower-symmetry regimes, even allow s-wave spin splitting (net magnetization). The coexistence of ferroelectric signatures and altermagnetic order establishes local lattice symmetry in MnTe as a control knob for altermagnetic spin splitting, spin current generation, and multiferroic memory applications.

cond-mat.mtrl-sci

Twist-induced Out-of-plane Ferroelectricity in Bilayer Hafnia

Ferroelectric HfO2 is a promising candidate for next-generation memory devices due to its CMOS compatibility and ability to retain polarization at nanometer scales. However, the polar orthorhombic phase (Pca2_1) responsible for ferroelectricity is metastable and requires extrinsic stabilization, which makes it challenging for integration with silicon. We predict that bilayer 1T-HfO2 can exhibit robust and switchable out-of-plane (OOP) polarization arising from stacking-induced symmetry breaking. Using first-principles density functional theory, we predict that monolayer 1T-HfO2 can be cleaved from the (111) surface of cubic hafnia, and the monolayer is dynamically stable. When two aligned monolayers are twisted to form a moiré superlattice, it breaks the interlayer symmetry and allows the emergence of bistable OOP polarization. At a twist angle of 7.34o, the system exhibits a net polarization of ~16 μC/cm2. This sizeable polarization is due to the large polar displacements concentrated in AB stacking domains. Importantly, this polarization can be reversibly switched via interlayer sliding with a low energy barrier (~8 meV/formula unit) and comparable low coercive field (~0.2 V/nm), offering electric-field tunability. These findings establish twisted bilayer 1T-HfO2 as a scalable and robust 2D ferroelectric platform, enabling new pathways for integrating ferroelectric functionality into atomically thin memory and logic devices.

cond-mat.mtrl-sci

Hole-doping reduces the coercive field in ferroelectric hafnia

Ferroelectric hafnia (HfO2) holds promise for next-generation memory and logic applications because of its CMOS compatibility. However, the high coercive field required for polarization switching in HfO2 remains a critical challenge for efficient device operations. Using first-principles calculations and phenomenological modeling, we predict that hole doping can reduce the coercive field from 8 MV/cm in undoped hafnia to 6 MV/cm in hafnia doped with 0.2 holes per formula unit (f.u.). In the absence of doping, the reversal of polarization of the Pca21 phase is preferred through the non-polar, tetragonal P42/nmc phase. This switching pathway involves the coupling of three hard distortion modes that render undoped hafnia as an improper ferroelectric. The overall energy barrier through this pathway remains unchanged (80 meV/f.u.) upon hole doping. However, the introduction of holes hardens the polar distortion mode that connects the polar Pca21 phase to the non polar, orthorhombic Pbcm phase, and reduces the energy barrier from 180 meV/f.u. in undoped hafnia to 80 meV/f.u. at 0.2 holes/f.u.. The activation of the latter switching pathway through the Pbcm phase can lead to a reversal in the polarization direction. Overall, hole doping makes the switching pathway through the Pbcm phase competitive, and renders hafnia as a proper ferroelectric with a lower coercive field.

cond-mat.mtrl-sci

Sub-nm2 ferroelectric domains via charged 180 degree walls in ZrO2

Flat phonon bands in fluorite ferroelectrics (HfO2 or ZrO2) shrink polar domains laterally to an irreducible half-unit-cell width (0.27 nm) within which the vertical arrangement of dipoles is expected to remain uniform. We report on the direct observation of nonuniform and nearly discrete vertical arrangements of dipoles in ZrO2 thin films consisting of closely spaced head-to-head (HH) and tail-to-tail (TT) charged 180 degree walls, each exhibiting a distinct bulk-like structure. These charged domain walls (CDWs) further compress the irreducibly narrow, laterally stacked domains vertically to a thickness of 1-2.75 nm, yielding in-plane domains with sub-nm2 footprints-among the smallest ever reported for any ferroelectric material. The HH and TT walls form due to their flat longitudinal optical (LO) polar bands and are electrostatically stabilized by bound-charge compensation via interstitial oxygen atoms, which act as natural structural defects at the HH walls. Moreover, these walls are predicted to be conducting and to exhibit ultralow propagation barriers, with HH walls (1.6 meV) being far more mobile than TT walls (22.3 meV), indicating strong potential for low-voltage, domain-wall-based nanoelectronics.

cond-mat.mtrl-sci

Emergent Atomic Scale Polarisation Vortices in BaTiS3

Topological defects, such as vortices and skyrmions in magnetic and dipolar systems, can give rise to properties that are not observed in typical magnets and dielectrics. Here, we report the discovery of long-range ordered periodic dipole arrays of atomic-scale vortices and antivortices in the unconventional charge-density-wave (CDW) phase of BaTiS3, a quasi-1D chalcogenide. Synchrotron X-ray diffraction (XRD) reveals the presence of a multi-q ordering in BaTiS3 that confines vortex-vortex-antivortex polarisation triplets to the a-b plane with alternating handedness along the c-axis. The multi-q displacive distortions are characterised by three distinctive off-centre TiS6 configurations, whose ratios are independently confirmed by 47/49Ti solid-state nuclear magnetic resonance (SSNMR). Using first-principles calculations and phenomenological modelling, we show that the dipolar vortex unit cell in BaTiS3 arises from the coupling between multiple lattice instabilities arising from flat, soft phonon bands. This mechanism contrasts with classical dipolar textures in ferroelectric heterostructures that emerge from the competition between electrostatic and strain energies. The observation of dipolar vortices in BaTiS3 brings the ultimate scaling limit for real-space dipolar topological structures down to about a nanometre and unveils the intimate connection between crystal symmetry and real-space topology. Our work sets up zero-filling semiconducting materials with competing structural instabilities as a playground for realising and understanding quantum polarisation topologies.

cond-mat.mtrl-sci

Unveiling the Shortwave Absorption Spectra of Alumina Aerosols: Implications for Solar Radiation Modification

Alumina is proposed for Stratospheric Aerosol Injection (SAI)-based solar radiation modification due to its presumed ability to scatter sunlight strongly while absorbing weakly. Alumina is assigned negligible solar shortwave absorption in climate models; this assumption is not validated owing to technological challenges in quantifying its weak absorption signals. We report alumina's shortwave imaginary refractive index $k$, a determinant of its absorption strength, using sensitive in situ photoacoustic spectrometry, finding values ranging from $1.4 \times 10^{-4}$ to $1.2 \times 10^{-3}$. Particle-scale electron energy-loss spectroscopy provided independent validation and revealed that the non-ideal absorption arises from oxygen vacancy defects in the alumina's crystal structure. Aerosol chemistry climate model simulations to evaluate shortwave absorption radiative effects revealed insignificant impacts on radiative forcing and stratospheric warming. Our findings indicate that alumina's shortwave absorption, previously reported as a source of uncertainty, is unlikely to affect SAI impact calculations.

physics.ao-ph

Antiferroelectric Hafnia Down to the 2D Limit

Antiferroelectricity is a material property characterized by alternating electric dipoles spontaneously ordered in antiparallel directions. Antiferroelectrics are promising for energy storage, solid-state cooling, and memory technologies; however, these materials are scarce, and their scalability remains largely unexplored. In this work, we demonstrate that single-crystalline hafnia, a lead-free CMOS-compatible material, exhibits antiferroelectricity under compressive-strain conditions. We observe antiparallel sublattice polarization and stable double-hysteresis in single-crystalline (111)-oriented epitaxial La-doped hafnia films grown on yttrium-stabilized zirconia and show that the antipolar orthorhombic phase of hafnia adheres to the Kittel model of antiferroelectricity. Notably, compressive strain strengthens the antiferroelectric order in thinner La-doped hafnia films, achieving an unprecedented 850 C ordering temperature in the two-dimensional limit, highlighting hafnia's potential for advanced antiferroelectric devices.

cond-mat.mtrl-sci

Design Principles and Identification of Birefringent Materials

Birefringence ($Δn$) is the dependence of the refractive index of a material on the polarization of light travelling through it. Birefringent materials are used as polarizers, waveplates, and for novel light-matter coupling. While several birefringent materials exist, only a handful of them show large $Δn$ > 0.3, and are primarily limited to the infrared region. The variation of $Δn$ across diverse materials classes and strategies to achieve highly birefringent materials with transparency covering different regions of the electromagnetic spectrum are missing. We have calculated the $Δn$ of 967 non-cubic, formable crystals having vastly different structures, polyhedral connectivity and chemical compositions. From this set of compounds, we have screened highly birefringent crystals ($Δn$ greater than 0.3) having transparency in different regions of the electromagnetic spectrum. The screened compounds belong to several families such as A3'MN3, AMO2, AN3, and A'N6 (A = Li, Na, K; A'= Ca, Sr, Ba; M = V, Nb, Ta). By analyzing the electronic structures of these compounds, we have distilled rules to enable the design of crystals with large $Δn$.

cond-mat.mtrl-sci

Improper flexoelectricity in hexagonal rare-earth ferrites

Flexoelectricity is a universal effect that generates electric polarization due to broken inversion symmetry caused by local strain gradient. The large strain gradient at nanoscale makes flexo-electric effects, especially in nanoscopic ferroelectric materials, promising in sensors, actuator, energy harvesting, and memory applications. In this work, we studied flexoelectricity in hexagonal ferrites h-YbFeO3, an improper ferroelectric expected to have weak piezoelectricity and low sensitivity to depolarization field, which are advantageous for studying flexoelectric effects. We show that in h-YbFeO3 epitaxial thin films, strain gradient on the order of 10^6 m-1 occurs near grain boundaries and edge dislocation, which has a significant impact on the non-polar K3 structural distortion that induces spontaneous polarization. The phenomenological model based on the Landau theory of improper ferroelectricity suggests an indirect flexoelectric effect on the order of 10 nC/m in h-YbFeO3, which is substantially larger than the expectation from Kogan mechanism. These results reveal a novel microscopic mechanism of coupling between strain gradient and polarization mediated by structural distortion, which we call improper flexoelectricity.

cond-mat.mtrl-sci

Towards Atomic-Scale Control over Structural Modulations in Quasi-1D Chalcogenides for Colossal Optical Anisotropy

Optically anisotropic materials are sought after for tailoring the polarization of light. Recently, colossal optical anisotropy was reported in a quasi-one-dimensional chalcogenide, Sr1.125TiS3. Compared to SrTiS3, the excess Sr in Sr1.125TiS3 leads to periodic structural modulations and introduces additional electrons that undergo charge ordering on select Ti atoms to form a highly polarizable cloud oriented along the c-axis, hence, resulting in the colossolal optical anisotropy. Here, further enhancement of the colossal optical anisotropy to 2.5 in Sr1.143TiS3 is reported through control over the periodicity of the atomic-scale modulations. The role of structural modulations in tuning the optical properties in a series of SrxTiS3 compounds has been investigated using DFT calculations. The structural modulations arise from various stacking sequences of face-sharing TiS6 octahedra and twist-distorted trigonal prisms, and are found to be thermodynamically stable for x larger than 1 but smaller than 1.5. As x increases, an indirect-to-direct band gap transition is predicted for x equal to and larger than 1.143 along with an increased occupancy of Ti-dz2 states. Together, these two factors result in a theoretically predicted maximum birefriengence of 2.5 for Sr1.143TiS3. Single crystals of Sr1.143TiS3 were grown using a molten-salt flux method. Atomic-scale observations using scanning transmission electron microscopy confirm the feasibility of synthesizing SrxTiS3 with varied modulation periodicities. Overall, these findings demonstrate compositonal tunability of optical properties in SrxTiS3 compounds, and potentially in other hexagonal perovskites having structural modulations.

cond-mat.mtrl-sci

Strong tunability of epitaxial relationship and reconstruction at improper ferroelectric interface

The atomic structures at epitaxial film-substrate interfaces determine scalability of thin films and can result in new phenomena. However, it is challenging to control the interfacial structures since they are decided by the most stable atomic bonding. In this work, we report strong tunability of the epitaxial interface of improper ferroelectric hexagonal ferrites deposited on spinel ferrites. The selection of two interface types, related by a 90 deg rotation of in-plane epitaxial relations and featured by disordered and hybridized reconstructions respectively, can be achieved by growth conditions, stacking sequences, and spinel compositions. While the disordered type suppresses the primary K3 structure distortion and ferroelectricity in hexagonal ferrites, the hybridized type is more coherent with the distortion with minimal suppression. This tunable interfacial structure provides critical insight on controlling interfacial clamping and may offer a solution for the long-standing problem of practical critical thickness in improper ferroelectrics.

cond-mat.mtrl-sci

Antiferroelectricity with metastable polar state from Kittel model

We have revisited the Kittel model that describes antiferroelectricity (AFE) in terms of two sublattices of spontaneous polarization with antiparallel couplings. By constructing the comprehensive phase diagram including the antiferroelectric, ferroelectric, and paraelectric phases in the parameter space, we identified an AFE phase with stable antipolar states and metastable polar state (SAMP) due to the weak coupling between sublattices. We found that the metastability of the polar state in SAMP phase could lead to apparent remanent polarization, depending on the measurement timescale. This explains the observed ferroelectric behavior of orthorhombic hafnia, which is predicted to be antipolar by density functional theories.

cond-mat.mtrl-sci

Giant coercivity and enhanced intrinsic anomalous Hall effect at vanishing magnetization in a compensated kagome ferrimagnet

Ferrimagnets that can be driven to magnetic compensation show promise for use in spintronics as they exhibit a finite anomalous Hall effect at zero magnetic field without having a significant magnetic moment. Compensated ferrimagnet spintronic devices with both a large anomalous Hall effect and a high coercivity would be simultaneously easy to read and difficult to erase. The kagome ferrimagnet TbMn$_6$Sn$_6$ has been reported to host a large intrinsic anomalous Hall effect. Here, we demonstrate that doping the Mn sites with Cr drives the system towards magnetic compensation. For nearly compensated compositions at low temperatures, giant coercive fields exceeding 14 T are observed. Additionally, Cr doping significantly enhances the intrinsic anomalous Hall effect, which can be attributed to a shift in the Fermi level. Our results extend the range of unique magnetic states observed in kagome materials, demonstrating that chemical doping is an effective strategy to tune and realize these states.

cond-mat.str-el

Strain-driven stabilization of a room-temperature chiral multiferroic with coupled ferroaxial and ferroelectric order

Noncollinear ferroic materials are sought after as testbeds to explore the intimate connections between topology and symmetry, which result in electronic, optical and magnetic functionalities not observed in collinear ferroic materials. For example, ferroaxial materials have ordered rotational structural distortions that break mirror symmetry and induce chirality. When ferroaxial order is coupled with ferroelectricity arising from a broken inversion symmetry, it offers the prospect of electric-field-control of the ferroaxial distortions and opens up new tunable functionalities. However, chiral multiferroics, especially ones stable at room temperature, are rare. We report the discovery of a strain-stabilized, room-temperature chiral multiferroic phase in single crystals of BaTiS$_3$, a quasi-one-dimensional (1D) hexagonal chalcogenide. Using first-principles calculations, we predict the stabilization of this multiferroic phase having $P6_3$ space group for biaxial tensile strains exceeding 1.5% applied on the basal ab-plane of the room temperature $P6_3cm$ phase of BaTiS$_3$. The chiral multiferroic phase is characterized by rotational distortions of select TiS$_6$ octahedra around the long $c$-axis and polar displacement of Ti atoms along the $c$-axis. We used an innovative approach using focused ion beam milling to make appropriately strained samples of BaTiS$_3$. The ferroaxial and ferroelectric distortions, and their domains in $P6_3$-BaTiS$_3$ were directly resolved using atomic resolution scanning transmission electron microscopy. Landau-based phenomenological modeling predicts a strong coupling between the ferroelectric and the ferroaxial order making $P6_3$-BaTiS$_3$ an attractive test bed for achieving electric-field control of chirality-related phenomena such as circular photo-galvanic current and the Rashba effect.

cond-mat.mtrl-sci

Polarization Pinning at Antiphase Boundaries in Multiferroic YbFeO$_3$

The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain-walls. We report on the pinning of polarization due to antiphase boundaries in thin films of the multiferroic hexagonal YbFeO$_3$. We have directly resolved the atomic structure of a sharp antiphase boundary (APB) in YbFeO$_3$ thin films using a combination of aberration-corrected scanning transmission electron microscopy (STEM) and total energy calculations based on density-functional theory (DFT). We find the presence of a layer of FeO$_6$ octahedra at the APB that bridge the adjacent domains. STEM imaging shows a reversal in the direction of polarization on moving across the APB, which DFT calculations confirm is structural in nature as the polarization reversal reduces the distortion of the FeO$_6$ octahedral layer at the APB. Such APBs in hexagonal perovskites are expected to serve as domain-wall pinning sites and hinder ferroelectric switching of the domains.

cond-mat.mtrl-sci

Topological interfacial states in ferroelectric domain walls of two-dimensional bismuth

Using machine learning methods, we explore different types of domain walls in the recently unveiled single-element ferroelectric, the bismuth monolayer [Nature 617, 67 (2023)]. Remarkably, our investigation reveals that the charged domain wall configuration exhibits lower energy compared to the uncharged domain wall structure. We also demonstrate that the experimentally discovered tail-to-tail domain wall maintains topological interfacial states caused by the change in the Z_2 number between ferroelectric and paraelectric states. Interestingly, due to the intrinsic built-in electric fields in asymmetry DW configurations, we find that the energy of topological interfacial states splits, resulting in an accidental band crossing at the Fermi level. Our study suggests that domain walls in two-dimensional bismuth hold potential as a promising platform for the development of ferroelectric domain wall devices.

cond-mat.mtrl-sci

Giant Modulation of Refractive Index from Picoscale Atomic Displacements

Structural disorder has been shown to enhance and modulate magnetic, electrical, dipolar, electrochemical, and mechanical properties of materials. However, the possibility of obtaining novel optical and optoelectronic properties from structural disorder remains an open question. Here, we show unambiguous evidence of disorder in the form of anisotropic, picoscale atomic displacements modulating the refractive index tensor and resulting in the giant optical anisotropy observed in BaTiS$_3$, a quasi-one-dimensional hexagonal chalcogenide. Single crystal X-ray diffraction studies reveal the presence of antipolar displacements of Ti atoms within adjacent TiS$_6$ chains along the c-axis, and three-fold degenerate Ti displacements in the a-b plane. $^{47/49}$Ti solid-state NMR provides additional evidence for those Ti displacements in the form of a three-horned NMR lineshape resulting from a low symmetry local environment around Ti atoms. We used scanning transmission electron microscopy to directly observe the globally disordered Ti a-b plane displacements and find them to be ordered locally over a few unit cells. First-principles calculations show that the Ti a-b plane displacements selectively reduce the refractive index along the ab-plane, while having minimal impact on the refractive index along the chain direction, thus resulting in a giant enhancement in the optical anisotropy. By showing a strong connection between structural disorder with picoscale displacements and the optical response in BaTiS$_3$, this study opens a pathway for designing optical materials with high refractive index and functionalities such as large optical anisotropy and nonlinearity.

cond-mat.mtrl-sci