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Guoji Zheng

Publications and source records attributed to Guoji Zheng.

8 recordsLinked to original sources

Controllable interaction between photons and distant spins via vacuum Rabi oscillations

Vacuum Rabi oscillations between a single photon and a single spin demonstrate the capability of harnessing light-matter interaction at the level of a single quantum of energy. Since the observation of strong spin-photon coupling in gate-defined quantum dots, probing this interaction in the time-domain has been a major objective. Here, we carefully engineer a device composed of two spatially separated double quantum dots hosting single electron spin qubits and a superconducting cavity to accommodate microwave photons. We observe multiple vacuum Rabi oscillations between each spin qubit and the cavity. By concatenating vacuum Rabi oscillations involving the two spins, an energy excitation in one qubit can be emitted as a photon and then transferred to the other qubit. When a single photon is emitted, the cavity is prepared in a Fock state, leading to an accelerated vacuum Rabi frequency. These results serve as building blocks not only in exploring light-matter interactions, but also in interfacing semiconductor spin qubits to photonic links.

cond-mat.mes-hall

Probing single electrons across 300 mm spin qubit wafers

Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics like qubit yield and voltage variation. Spin qubits based on electrons in Si have shown impressive control fidelities but have historically been challenged by yield and process variation. Here we present a testing process using a cryogenic 300 mm wafer prober to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and probe the transitions of single electrons across full wafers. We analyze the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300 mm scale. Together these results demonstrate the advances that can be achieved through the application of CMOS industry techniques to the fabrication and measurement of spin qubit devices.

quant-ph

Two-qubit logic between distant spins in silicon

Direct interactions between quantum particles naturally fall off with distance. For future-proof qubit architectures, however, it is important to avail of interaction mechanisms on different length scales. In this work, we utilize a superconducting resonator to facilitate a coherent interaction between two semiconductor spin qubits 250 $μ$m apart. This separation is several orders of magnitude larger than for the commonly employed direct interaction mechanisms in this platform. We operate the system in a regime where the resonator mediates a spin-spin coupling through virtual photons. We report anti-phase oscillations of the populations of the two spins with controllable frequency. The observations are consistent with iSWAP oscillations and ten nanosecond entangling operations. These results hold promise for scalable networks of spin qubit modules on a chip.

cond-mat.mes-hall

Tuning arrays with rays: Physics-informed tuning of quantum dot charge states

Quantum computers based on gate-defined quantum dots (QDs) are expected to scale. However, as the number of qubits increases, the burden of manually calibrating these systems becomes unreasonable and autonomous tuning must be used. There has been a range of recent demonstrations of automated tuning of various QD parameters such as coarse gate ranges, global state topology (e.g. single QD, double QD), charge, and tunnel coupling with a variety of methods. Here, we demonstrate an intuitive, reliable, and data-efficient set of tools for an automated global state and charge tuning in a framework deemed physics-informed tuning (PIT). The first module of PIT is an action-based algorithm that combines a machine learning classifier with physics knowledge to navigate to a target global state. The second module uses a series of one-dimensional measurements to tune to a target charge state by first emptying the QDs of charge, followed by calibrating capacitive couplings and navigating to the target charge state. The success rate for the action-based tuning consistently surpasses 95 % on both simulated and experimental data suitable for off-line testing. The success rate for charge setting is comparable when testing with simulated data, at 95.5(5.4) %, and only slightly worse for off-line experimental tests, with an average of 89.7(17.4) % (median 97.5 %). It is noteworthy that the high performance is demonstrated both on data from samples fabricated in an academic cleanroom as well as on an industrial 300 mm} process line, further underlining the device agnosticism of PIT. Together, these tests on a range of simulated and experimental devices demonstrate the effectiveness and robustness of PIT.

cond-mat.mes-hall

Automated extraction of capacitive coupling for quantum dot systems

Gate-defined quantum dots (QDs) have appealing attributes as a quantum computing platform. However, near-term devices possess a range of possible imperfections that need to be accounted for during the tuning and operation of QD devices. One such problem is the capacitive cross-talk between the metallic gates that define and control QD qubits. A way to compensate for the capacitive cross-talk and enable targeted control of specific QDs independent of coupling is by the use of virtual gates. Here, we demonstrate a reliable automated capacitive coupling identification method that combines machine learning with traditional fitting to take advantage of the desirable properties of each. We also show how the cross-capacitance measurement may be used for the identification of spurious QDs sometimes formed during tuning experimental devices. Our systems can autonomously flag devices with spurious dots near the operating regime, which is crucial information for reliable tuning to a regime suitable for qubit operations.

cond-mat.mes-hall

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport. We find that the concentration fluctuations of Si and Ge atoms within the 3D landscape of Si/SiGe interfaces can explain the observed large spread of valley splitting from measurements on many quantum dot devices. Against the prevailing belief, we propose to boost these random alloy composition fluctuations by incorporating Ge atoms in the Si quantum well to statistically enhance valley splitting.

cond-mat.mes-hall

Coherent spin-spin coupling mediated by virtual microwave photons

We report the coherent coupling of two electron spins at a distance via virtual microwave photons. Each spin is trapped in a silicon double quantum dot at either end of a superconducting resonator, achieving spin-photon couplings up to around $g_s/2π= 40 \ \text{MHz}$. As the two spins are brought into resonance with each other, but detuned from the photons, an avoided crossing larger than the spin linewidths is observed with an exchange splitting around $2J/2π= 20 \ \text{MHz}$. In addition, photon-number states are resolved from the shift $2χ_s/2π= -13 \ \text{MHz}$ that they induce on the spin frequency. These observations demonstrate that we reach the strong dispersive regime of circuit quantum electrodynamics with spins. Achieving spin-spin coupling without real photons is essential to long-range two-qubit gates between spin qubits and scalable networks of spin qubits on a chip.

cond-mat.mes-hall

On-chip microwave filters for high-impedance resonators with gate-defined quantum dots

Circuit quantum electrodynamics (QED) employs superconducting microwave resonators as quantum buses. In circuit QED with semiconductor quantum-dot-based qubits, increasing the resonator impedance is desirable as it enhances the coupling to the typically small charge dipole moment of these qubits. However, the gate electrodes necessary to form quantum dots in the vicinity of a resonator inadvertently lead to a parasitic port through which microwave photons can leak, thereby reducing the quality factor of the resonator. This is particularly the case for high-impedance resonators, as the ratio of their total capacitance over the parasitic port capacitance is smaller, leading to larger microwave leakage than for 50-$Ω$ resonators. Here, we introduce an implementation of on-chip filters to suppress the microwave leakage. The filters comprise a high-kinetic-inductance nanowire inductor and a thin-film capacitor. The filter has a small footprint and can be placed close to the resonator, confining microwaves to a small area of the chip. The inductance and capacitance of the filter elements can be varied over a wider range of values than their typical spiral inductor and interdigitated capacitor counterparts. We demonstrate that the total linewidth of a 6.4 GHz and approximately 3-k$Ω$ resonator can be improved down to 540 kHz using these filters.

physics.app-ph